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31. 发明授权

US08476155B1 Formation of a high-K crystalline dielectric composition 有权
标题翻译：形成高K结晶介电组合物
公开(公告)号：US08476155B1
公开(公告)日：2013-07-02
申请号：US12835790
申请日：2010-07-14
申请人： Ha-Jin Lim , Weon-Hong Kim
发明人： Ha-Jin Lim , Weon-Hong Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/02181 , H01L21/02148 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28273 , H01L21/3105 , H01L28/40 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an “A” element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an “M” crystalline structure. The “A” element about 1 at % to about 5 at % of the total content of the “A” element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a “T” crystalline structure through a phase transition process, wherein the “T” crystalline structure is different from the “M” crystalline structure. An upper layer is formed on the “T” crystalline dielectric.
摘要翻译：提供形成电介质的方法和制造半导体器件的方法。该方法包括在下层上形成包含Hf，O和“A”元素的预备电介质。预置电介质形成为非晶结构或非晶结构和“M”晶体结构的混合结构。 “A”元素在“A”元素的总含量和预置电介质中的Hf的约1at％至约5at％的“A”元素。通过氮化处理，将氮气加入到初步电介质中。通过相变过程将含氮电介质变成具有“T”晶体结构的电介质，其中“T”晶体结构不同于“M”晶体结构。在“T”晶体电介质上形成上层。

32. 发明申请

US20100025781A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors 有权
标题翻译：具有多层介质膜的晶体管及其制造方法
公开(公告)号：US20100025781A1
公开(公告)日：2010-02-04
申请号：US12574912
申请日：2009-10-07
申请人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung
发明人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung
IPC分类号： H01L29/78 , H01L21/31
CPC分类号： H01L21/28185 , H01L21/28079 , H01L21/28194 , H01L21/28202 , H01L21/823857 , H01L29/495 , H01L29/513 , H01L29/517
摘要： Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.
摘要翻译：提供了在通道区域上包括多层电介质膜的晶体管。多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。在多层电介质膜上设置栅电极。

33. 发明授权

US07615830B2 Transistors with multilayered dielectric films 有权
标题翻译：具有多层介电膜的晶体管
公开(公告)号：US07615830B2
公开(公告)日：2009-11-10
申请号：US11252514
申请日：2005-10-18
申请人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung
发明人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung
IPC分类号： H01L21/8238
CPC分类号： H01L21/28185 , H01L21/28079 , H01L21/28194 , H01L21/28202 , H01L21/823857 , H01L29/495 , H01L29/513 , H01L29/517
摘要： Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.
摘要翻译：提供了在通道区域上包括多层电介质膜的晶体管。多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。在多层电介质膜上设置栅电极。

34. 发明授权

US07547951B2 Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same 有权
标题翻译：具有氮结合有源区的半导体器件及其制造方法
公开(公告)号：US07547951B2
公开(公告)日：2009-06-16
申请号：US11396702
申请日：2006-04-04
申请人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung , Yun Seok Kim , Min Joo Kim
发明人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung , Yun Seok Kim , Min Joo Kim
IPC分类号： H01L29/78
CPC分类号： H01L21/823807 , H01L21/823857
摘要： A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate electrode may be formed on the nitrogen-incorporated active region. A first gate dielectric layer may be interposed between the nitrogen-incorporated active region and the first gate electrode. The first gate dielectric layer may include a first dielectric layer and a second dielectric layer. The second dielectric layer may be a nitrogen contained dielectric layer. A second gate electrode may be formed on the second region. A second gate dielectric layer may be interposed between the second region and the second gate electrode. The first gate dielectric layer may have the same or substantially the same thickness as the second gate dielectric layer, and the nitrogen contained dielectric layer may contact with the nitrogen-incorporated active region.
摘要翻译：半导体器件可以包括具有第一区域和第二区域的半导体衬底。可以在第一区域内形成含氮的有源区。可以在引入氮的有源区上形成第一栅电极。第一栅极电介质层可插入在引入氮的有源区和第一栅电极之间。第一栅介质层可以包括第一介电层和第二介电层。第二电介质层可以是含氮介电层。第二栅极电极可以形成在第二区域上。可以在第二区域和第二栅电极之间插入第二栅极电介质层。第一栅极介电层可以具有与第二栅极介电层相同或基本相同的厚度，并且含氮介电层可以与引入氮的有源区接触。

35. 发明申请

US20060166476A1 Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure 有权
标题翻译：具有高介电常数的介电结构的形成方法和具有电介质结构的半导体器件的制造方法
公开(公告)号：US20060166476A1
公开(公告)日：2006-07-27
申请号：US11339416
申请日：2006-01-25
申请人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
发明人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
IPC分类号： H01L21/471
CPC分类号： H01L21/022 , C23C14/5826 , C23C14/586 , C23C16/56 , H01L21/02142 , H01L21/02252 , H01L21/28273 , H01L21/3141 , H01L21/3143 , H01L21/31645 , H01L27/10852 , H01L27/10873 , H01L27/115 , H01L27/11521 , H01L28/40 , H01L29/513 , H01L29/517 , H01L29/78
摘要： In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.
摘要翻译：在制造电介质结构的方法中，在通过使用掺杂有硅的金属氧化物在基板上形成第一介电层之后，将基板放置在室的基座上。通过在控制基座和接地之间的电压差的同时用等离子体处理第一电介质层，在第一电介质层上形成第二电介质层。在第一电介质层上形成包括掺杂有足够的氮含量的硅的金属氮氧化物的第二电介质层。因此，可以提高包括第一和第二电介质层的电介质结构的介电性能，并且可以大大降低泄漏电流。通过使电介质结构适应于栅极绝缘层和/或电容器或非易失性半导体存储器件的电介质层，可以提高电容和电性能。

36. 发明申请

US20060081948A1 Transistors with multilayered dielectric films and methods of manufacturing such transistors 有权
标题翻译：具有多层介电膜的晶体管和制造这种晶体管的方法
公开(公告)号：US20060081948A1
公开(公告)日：2006-04-20
申请号：US11252514
申请日：2005-10-18
申请人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung
发明人： Ha-Jin Lim , Jong-Ho Lee , Hyung-Suk Jung
IPC分类号： H01L21/8238 , H01L29/94
CPC分类号： H01L21/28185 , H01L21/28079 , H01L21/28194 , H01L21/28202 , H01L21/823857 , H01L29/495 , H01L29/513 , H01L29/517
摘要： Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.
摘要翻译：提供了在通道区域上包括多层电介质膜的晶体管。多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。在多层电介质膜上设置栅电极。

37. 发明申请

US20050233598A1 Method of fabricating high-k dielectric layer having reduced impurity 有权
标题翻译：制造具有减少的杂质的高k电介质层的方法
公开(公告)号：US20050233598A1
公开(公告)日：2005-10-20
申请号：US11107559
申请日：2005-04-15
申请人： Hyung-Suk Jung , Jong-Ho Lee , Ha-Jin Lim , Jae-Eun Park , Yun-Seok Kim , Jong-Ho Yang
发明人： Hyung-Suk Jung , Jong-Ho Lee , Ha-Jin Lim , Jae-Eun Park , Yun-Seok Kim , Jong-Ho Yang
IPC分类号： H01L21/31 , C23C16/40 , H01L21/28 , H01L21/314 , H01L21/336 , H01L21/469 , H01L29/51
CPC分类号： H01L21/022 , C23C16/402 , C23C16/45525 , C23C16/45527 , C23C16/45529 , H01L21/0228 , H01L21/02318 , H01L21/28185 , H01L21/28194 , H01L21/3142 , H01L21/3143 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.
摘要翻译：公开了制造用于半导体应用的具有减少的杂质的高k电介质层的方法。该方法包括以下步骤：结合对叠层电介质层执行的后处理步骤，使用ALD法形成具有形成在半导体衬底上的第一电介质层和第二电介质层的叠层电介质层。形成堆叠的电介质层并进行后处理的步骤至少重复一次，从而制造高k电介质层。

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