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    • 33. 发明授权
    • Electron gun for CRT
    • 电子枪CRT
    • US5281896A
    • 1994-01-25
    • US937171
    • 1992-08-31
    • Min-Cheol BaeSang-Jin Park
    • Min-Cheol BaeSang-Jin Park
    • H01J29/48H01J29/51H01J29/62H01J29/46H01J29/56
    • H01J29/628H01J29/488H01J29/51
    • An electron gun for a color cathode ray tube includes cathodes, a control electrode and a screen electrode which form a front triode, first, second, third, fourth and fifth focus electrodes which form a plurality of auxiliary electrostatic lenses, and a final accelerating electrode installed adjacent to the fifth focus electrode to form a main electrostatic lens, wherein vertically-elongated electron beam passing holes are formed on the fourth focus electrode, a predetermined focus voltage is applied to the first, second and fifth focus electrodes, a dynamic focus voltage lower than the focus voltage and synchronized with a deflection synchronizing signal is applied to the fourth focus electrode, a static voltage higher than the focus voltage is applied to the second focus electrode, and an anode voltage higher than the focus voltage is applied to the final accelerating electrode.
    • 用于彩色阴极射线管的电子枪包括阴极,控制电极和屏幕电极,其形成形成多个辅助静电透镜的前三极管,第一,第二,第三,第四和第五聚焦电极,以及最终加速电极 安装在第五聚焦电极附近以形成主静电透镜,其中垂直细长的电子束通过孔形成在第四聚焦电极上,预定的聚焦电压施加到第一,第二和第五聚焦电极,动态聚焦电压 低于焦点电压并与偏转同步信号同步的信号被施加到第四聚焦电极,将高于聚焦电压的静态电压施加到第二聚焦电极,并且将高于焦点电压的阳极电压施加到最终 加速电极。
    • 40. 发明申请
    • Solar Cell and Manufacturing Method Thereof
    • 太阳能电池及其制造方法
    • US20120273040A1
    • 2012-11-01
    • US13413629
    • 2012-03-06
    • Won-Gyun KimHee-June KwakSang-Jin ParkSang-Won SeoYoung-Jin Kim
    • Won-Gyun KimHee-June KwakSang-Jin ParkSang-Won SeoYoung-Jin Kim
    • H01L31/0232H01L31/0236H01L31/18
    • H01L31/0682Y02E10/547
    • A method for forming a doped region in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface undoped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate.
    • 在太阳能电池中形成掺杂区域的方法包括:制备衬底的第一和第二表面,在第一表面的一部分中形成掺杂有第一掺杂剂的第一掺杂区,在第一表面上形成氧化硅层; 所述氧化硅层在所述第一掺杂区域上包括第一氧化硅层并且具有第一厚度,以及在所述第一表面的由所述第一掺杂物掺杂的部分上的第二氧化硅层,并且具有小于所述第一厚度的第一厚度 厚度,从第一表面外部注入第二掺杂剂到第一氧化硅层和第二氧化硅层中,以及通过对第一氧化硅层进行热处理形成与第一掺杂区相邻的第二掺杂区,第二氧化硅 层和基板。