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1. 发明授权

US08865503B2 Back contacting solar cell having P-doped regions and N-doped regions at the same layer and manufacturing method thereof 有权
标题翻译：背面接触相同层具有P掺杂区域和N掺杂区域的太阳能电池及其制造方法
公开(公告)号：US08865503B2
公开(公告)日：2014-10-21
申请号：US13413629
申请日：2012-03-06
申请人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
发明人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
IPC分类号： H01L31/04 , H01L31/068
CPC分类号： H01L31/0682 , Y02E10/547
摘要： A method for forming doped regions in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface not doped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate.
摘要翻译：在太阳能电池中形成掺杂区域的方法包括：制备衬底的第一和第二表面，在第一表面的一部分中形成掺杂有第一掺杂剂的第一掺杂区，在第一表面上形成氧化硅层，氧化硅层包括第一掺杂区上的第一氧化硅层并具有第一厚度，第二氧化硅层在第一表面的不被第一掺杂物掺杂的部分上，并且具有小于第一掺杂区的第一厚度厚度，从第一表面外部注入第二掺杂剂到第一氧化硅层和第二氧化硅层中，以及通过对第一氧化硅层进行热处理形成与第一掺杂区相邻的第二掺杂区，第二氧化硅层和基板。

2. 发明申请

US20120273040A1 Solar Cell and Manufacturing Method Thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120273040A1
公开(公告)日：2012-11-01
申请号：US13413629
申请日：2012-03-06
申请人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
发明人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
IPC分类号： H01L31/0232 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/0682 , Y02E10/547
摘要： A method for forming a doped region in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface undoped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate.
摘要翻译：在太阳能电池中形成掺杂区域的方法包括：制备衬底的第一和第二表面，在第一表面的一部分中形成掺杂有第一掺杂剂的第一掺杂区，在第一表面上形成氧化硅层; 所述氧化硅层在所述第一掺杂区域上包括第一氧化硅层并且具有第一厚度，以及在所述第一表面的由所述第一掺杂物掺杂的部分上的第二氧化硅层，并且具有小于所述第一厚度的第一厚度厚度，从第一表面外部注入第二掺杂剂到第一氧化硅层和第二氧化硅层中，以及通过对第一氧化硅层进行热处理形成与第一掺杂区相邻的第二掺杂区，第二氧化硅层和基板。

3. 发明授权

US09412895B2 Method of manufacturing photoelectric device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US09412895B2
公开(公告)日：2016-08-09
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

4. 发明申请

US20130267059A1 METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20130267059A1
公开(公告)日：2013-10-10
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

5. 发明授权

US09312405B2 Thin film type solar cell and fabrication method thereof 有权
标题翻译：薄膜型太阳能电池及其制造方法
公开(公告)号：US09312405B2
公开(公告)日：2016-04-12
申请号：US13560951
申请日：2012-07-27
申请人： Sung-Chul Lee , Doo-Youl Lee , Young-Jin Kim , Young-Su Kim , Young-Soo Kim , Dong-Hun Lee
发明人： Sung-Chul Lee , Doo-Youl Lee , Young-Jin Kim , Young-Su Kim , Young-Soo Kim , Dong-Hun Lee
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/065 , H01L31/02168 , H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.
摘要翻译：一种制造太阳能电池的方法包括在半导体衬底上形成具有第一导电类型的掺杂部分，在半导体衬底上生长氧化物层，在氧化物层中形成多个凹陷部分，在半导体上进一步生长氧化物层在所述半导体衬底的与所述凹部对应的区域上形成具有第二导电类型的掺杂部分，形成与所述第一导电类型的所述掺杂部分电耦合的第一导电电极，以及在所述半导体衬底上形成第二导电电极并且电耦合到具有第二导电类型的掺杂部分，其中具有第一和第二导电类型的掺杂部分之间的间隙对应于通过进一步生长氧化物层形成的氧化物层的宽度。

6. 发明授权

US08889981B2 Photoelectric device 有权
标题翻译：光电器件
公开(公告)号：US08889981B2
公开(公告)日：2014-11-18
申请号：US13424450
申请日：2012-03-20
申请人： Doo-Youl Lee , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
发明人： Doo-Youl Lee , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/0352 , H01L31/075 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/0352 , H01L31/0745 , H01L31/0747 , H01L31/075 , Y02E10/547 , Y02E10/548
摘要： A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.
摘要翻译：光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

7. 发明授权

US08744235B2 Method and apparatus for processing additional data in broadcast signal, method and apparatus for recording broadcast signal, and method and apparatus for reproducing recorded broadcasting signal 有权
标题翻译：用于处理广播信号中的附加数据的方法和装置，用于记录广播信号的方法和装置，以及用于再现记录的广播信号的方法和装置
公开(公告)号：US08744235B2
公开(公告)日：2014-06-03
申请号：US12348961
申请日：2009-01-06
申请人： Young-Jin Kim
发明人： Young-Jin Kim
IPC分类号： H04N9/80 , H04N5/92 , G11B27/00 , H04N5/93 , H04N5/917 , H04N5/783
CPC分类号： H04N5/783 , H04N5/781 , H04N5/85 , H04N9/8042 , H04N9/8205 , H04N9/8233
摘要： A method and apparatus for processing additional data in a broadcast signal, a method and apparatus for recording a broadcast signal, and a method and apparatus for reproducing the recorded broadcast signal, which allow the normal display of additional data such as closed caption data on a screen during high-speed playback. The method includes extracting additional data from a video frame in an externally received broadcast signal, storing the extracted additional data in a transport stream generated from the broadcast signal, storing the transport stream containing the additional data, extracting the additional data from the stored transport stream according to a playback command, and separating a video signal and an audio signal from the transport stream and outputting the separate video signal and audio signal such that the extracted additional data is superimposed on the output video signal.
摘要翻译：一种用于处理广播信号中的附加数据的方法和装置，用于记录广播信号的方法和装置，以及用于再现所记录的广播信号的方法和装置，其允许在一个或多个信号上正常显示诸如隐藏字幕数据的附加数据高速播放时屏幕。该方法包括从外部接收的广播信号中从视频帧中提取附加数据，将所提取的附加数据存储在从广播信号生成的传输流中，存储包含附加数据的传输流，从存储的传输流中提取附加数据根据播放命令，从传输流分离视频信号和音频信号，并输出分离的视频信号和音频信号，使得所提取的附加数据叠加在输出视频信号上。

8. 发明申请

US20130087192A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20130087192A1
公开(公告)日：2013-04-11
申请号：US13445851
申请日：2012-04-12
申请人： Young-Su Kim , Doo-Youl Lee , Young-Jin Kim , Chan-Bin Mo , Young-Sang Park
发明人： Young-Su Kim , Doo-Youl Lee , Young-Jin Kim , Chan-Bin Mo , Young-Sang Park
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , Y02E10/547
摘要： A photovoltaic device, and a method of fabricating the same are provided. Here, a base portion and an emitter portion are formed on a surface of a semiconductor substrate. An insulation layer is formed on the base portion and the emitter portion. The insulation layer has a plurality of vias to partially expose the base portion and the emitter portion. A first electrode is formed to contact a region of the emitter portion through at least one of the vias, and a second electrode is formed to contact a region of the base portion through at least another one of the vias. Then, a dicing line is set at a bus electrode portion of the second electrode, and the semiconductor substrate is split into at least two photovoltaic devices at the base portion along the dicing line.
摘要翻译：提供一种光电器件及其制造方法。这里，在半导体衬底的表面上形成基极部分和发射极部分。绝缘层形成在基部和发射极部分上。绝缘层具有多个通孔以部分地暴露基部和发射极部分。第一电极形成为通过至少一个通孔接触发射极部分的区域，并且第二电极形成为通过至少另一个通孔接触基部的区域。然后，将切割线设置在第二电极的总线电极部分，并且半导体衬底沿着切割线在基部分割成至少两个光伏器件。

9. 发明申请

US20120024003A1 REFRIGERATOR 有权
标题翻译：冰箱
公开(公告)号：US20120024003A1
公开(公告)日：2012-02-02
申请号：US13147507
申请日：2009-02-02
申请人： Young-Jin Kim
发明人： Young-Jin Kim
IPC分类号： F25D23/12 , F25D25/00
CPC分类号： F25D23/126 , F25D2323/121 , F25D2323/122
摘要： A refrigerator is provided. The refrigerator includes a main body defining a refrigerator compartment and a freezer compartment, a door selectively closing the refrigerator compartment and the freezer compartment, respectively, a plurality of receiving members spaced apart vertically from each other in the refrigerator compartment, and a dispenser between upper and lower spaces of the receiving members, the dispenser supplying drinking water.
摘要翻译：提供冰箱。冰箱包括限定冷藏室和冷冻室的主体，分别选择性地关闭冷藏室和冷冻室的门，在冷藏室中彼此间隔开的多个接收构件，以及位于上部的分配器之间的分配器和接收构件的下部空间，所述分配器供应饮用水。

10. 发明申请

US20110063013A1 MIXER CIRCUIT 审中-公开
标题翻译：混频器电路
公开(公告)号：US20110063013A1
公开(公告)日：2011-03-17
申请号：US12868003
申请日：2010-08-25
申请人： Young-Jin Kim , Il-Ho Na , Chun-Sik Jeong , Seong-Young Son , Seung-Min Lee , Myung-Woon Hwang
发明人： Young-Jin Kim , Il-Ho Na , Chun-Sik Jeong , Seong-Young Son , Seung-Min Lee , Myung-Woon Hwang
IPC分类号： G06G7/12
CPC分类号： G06G7/16
摘要： The present invention discloses a mixer circuit for mixing two input signals by source-coupled MOS transistors and outputting a mixed result. A duty cycle controlling MOS transistor is connected to a source of each source-coupled MOS transistor in series. A duty cycle controlling pulse is applied to a gate of the duty cycle controlling MOS transistor. The duty cycle controlling pulse has a phase shift of −90 degrees with respect to a controlling pulse applied to the gate of the source-coupled MOS transistor connected with the duty cycle controlling MOS transistor in series. An AND-combination of the duty cycles of the two controlling pulses applied to the gates of the two MOS transistors connected in series can be controlled at 25%. Comparing to the conventional mixer circuit having a switch control duty cycle of 50%, the present invention achieves the effects of increasing the gain and reducing the noise figure.
摘要翻译：本发明公开了一种用于通过源极耦合MOS晶体管混合两个输入信号并输出混合结果的混频器电路。占空比控制MOS晶体管串联连接到每个源极耦合MOS晶体管的源极。占空比控制脉冲施加到占空比控制MOS晶体管的栅极。占空比控制脉冲相对于与占空比控制MOS晶体管串联连接的源极耦合MOS晶体管的栅极的控制脉冲具有-90度的相移。施加到串联连接的两个MOS晶体管的栅极的两个控制脉冲的占空比的AND组合可以控制在25％。与具有50％的开关控制占空比的常规混频器电路相比，本发明实现了增加增益和降低噪声系数的效果。

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