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31. 发明申请

US20120042120A1 BACKWARD COMPATIBLE EXTENDED USB PLUG AND RECEPTACLE WITH DUAL PERSONALITY 有权
标题翻译：后退兼容扩展的USB插头和双人个人电脑
公开(公告)号：US20120042120A1
公开(公告)日：2012-02-16
申请号：US13280193
申请日：2011-10-24
申请人： Jim Chin-Nan Ni , David Q. Chow , Frank I-Kang Yu , Abraham C. Ma , Ming-Shiang Shen
发明人： Jim Chin-Nan Ni , David Q. Chow , Frank I-Kang Yu , Abraham C. Ma , Ming-Shiang Shen
IPC分类号： G06F12/00 , G06F13/42
CPC分类号： G06F12/1416 , G06F21/32 , G06F21/78 , G06K19/07 , G06K19/07354 , G07C9/00087 , Y02D10/13
摘要： An extended Universal-Serial-Bus (USB) connector plug and socket each have a pin substrate with one surface that supports the four metal contact pins for the standard USB interface. An extension of the pin substrate carries another 8 extension metal contact pins that mate when both the connector plug and socket are extended. The extension can be an increased length of the plug's and socket's pin substrate or a reverse side of the substrate. Standard USB connectors do not make contact with the extension metal contacts that are recessed, retracted by a mechanical switch, or on the extension of the socket's pin substrate that a standard USB connector cannot reach. Standard USB sockets do not make contact with the extension metal contacts because the extended connector's extension contacts are recessed, or on the extension of the connector pin substrate that does not fit inside a standard USB socket.
摘要翻译：扩展的通用串行总线（USB）连接器插头和插座每个都具有一个引脚基板，一个表面支持用于标准USB接口的四个金属触点引脚。当两个连接器插头和插座都延伸时，针脚衬底的延伸部分带有另外8个延伸金属接触针。扩展可以是插头和插座的引脚基板或基板的相反侧的增加的长度。标准USB连接器不能与通过机械开关凹入，缩回的扩展金属触点或标准USB连接器无法到达的插座引脚基板延伸部分接触。由于扩展连接器的扩展触点凹进，或者连接器针脚基座的延伸部分不符合标准USB插座，因此标准USB插座不会与延长金属触点接触。

32. 发明授权

US07660938B1 Flash card reader and data exchanger utilizing low power extended USB protocol without polling 失效
标题翻译：闪存卡读卡器和数据交换器采用低功耗扩展USB协议，无轮询
公开(公告)号：US07660938B1
公开(公告)日：2010-02-09
申请号：US11929414
申请日：2007-10-30
申请人： David Q. Chow , Sidney Young , Abraham C. Ma , Ming-Shiang Shen
发明人： David Q. Chow , Sidney Young , Abraham C. Ma , Ming-Shiang Shen
IPC分类号： G06F13/00 , G06F12/00
CPC分类号： G06F13/4045 , G06F2213/0042
摘要： A portable universal serial bus (USB) data exchanger device is described herein. In one embodiment, the portable USB data exchanger includes at least one flash memory chip having a multi-level cell (MLC) memory array, a flash memory controller coupled to the at least one flash memory chip, the flash memory controller having a USB on-the-go (OTG) capability and controlling reading and writing of the flash memory chip, a first extended USB (EUSB) connector coupled to the flash memory controller to be coupled to a host, and a second EUSB connector coupled to the flash memory controller to be coupled to a slave USB device. The Portable USB data exchanger can communicate with either a host or a slave USB device without polling. Other methods and apparatuses are also described.
摘要翻译：本文描述了便携式通用串行总线（USB）数据交换设备。在一个实施例中，便携式USB数据交换器包括具有多电平单元（MLC）存储器阵列的至少一个闪速存储器芯片，耦合到该至少一个闪存芯片的闪存控制器，具有USB的闪存控制器（OTG）功能并且控制闪速存储器芯片的读取和写入，耦合到闪存控制器以耦合到主机的第一扩展USB（EUSB）连接器以及耦合到闪速存储器的第二EUSB连接器控制器耦合到从USB设备。便携式USB数据交换器可以与主机或从USB设备进行通信，无需轮询。还描述了其它方法和装置。

33. 发明申请

US20080177922A1 MASS PRODUCTION TESTING OF USB FLASH CARDS WITH VARIOUS FLASH MEMORY CELLS 失效
标题翻译：具有各种闪存存储器的USB闪存卡的质量生产测试
公开(公告)号：US20080177922A1
公开(公告)日：2008-07-24
申请号：US11871117
申请日：2007-10-11
申请人： David Q. Chow , Abraham C. Ma , Edward W. Lee , Ming-Shiang Shen
发明人： David Q. Chow , Abraham C. Ma , Edward W. Lee , Ming-Shiang Shen
IPC分类号： G06F13/00 , G06F12/00
CPC分类号： G06F11/2221
摘要： A high volume testing/formatting process is provided for Universal Serial Bus-based (USB-based) electronic data flash cards (USB devices) that meets the increasing demand for USB electronic data flash cards (USB devices). A test host is simultaneously coupled to the multiple USB devices (e.g., using a multi-port card reader or a probe fixture), a controller endpoint value is read from each of the USB devices and verified with a known good value, and then testing/formatting is performed on each of the USB devices by writing predetermined data into each USB device in a pipelined manner, then reading out and testing the predetermined data. In one embodiment, the test host implements a special USB driver that blocks standard USB registration procedures upon detecting the plurality of USB devices. Control and/or boot code data are written onto the flash memory device (i.e., instead of being provided on a controller ROM).
摘要翻译：为通用串行总线（USB）电子数据闪存卡（USB设备）提供了大容量测试/格式化过程，可满足USB电子数据闪存卡（USB设备）日益增长的需求。测试主机同时耦合到多个USB设备（例如，使用多端口读卡器或探头夹具），从每个USB设备读取控制器端点值，并用已知的良好值进行验证，然后测试通过以流水线方式将预定数据写入每个USB设备，然后读出并测试预定数据，在每个USB设备上执行/格式化。在一个实施例中，测试主机在检测到多个USB设备时实现阻止标准USB注册过程的特殊USB驱动器。控制和/或引导代码数据被写入快闪存储器件（即，不是设置在控制器ROM上）。

34. 发明授权

US08019943B2 High endurance non-volatile memory devices 失效
公开(公告)号：US08019943B2
公开(公告)日：2011-09-13
申请号：US13089898
申请日：2011-04-19
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/0866 , G06F2212/214 , G06F2212/7208 , G11C2211/5641
摘要： High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.

35. 发明授权

US07850082B1 Extended universal serial bus (USB) card reader 有权
标题翻译：扩展通用串行总线（USB）读卡器
公开(公告)号：US07850082B1
公开(公告)日：2010-12-14
申请号：US11932118
申请日：2007-10-31
申请人： David Q. Chow , Charles C. Lee , Frank I-Kang Yu , Ming-Shiang Shen
发明人： David Q. Chow , Charles C. Lee , Frank I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06K7/08
CPC分类号： G06F13/385 , G06F2213/0042 , G06F2213/3804
摘要： An extended universal serial bus (USB) card reader device is described herein. In one embodiment, a card reader includes a first extended USB (EUSB) connector to be coupled to an external host system, multiple flash memory card sockets capable of receiving multiple flash memory cards inserted therein, multiple flash controllers coupled to the plurality of flash memory card sockets respectively. The card reader further includes a memory for storing executable code, a processor coupled to each of the flash controllers for executing the executable code to control each of the plurality of flash controllers in order to access the corresponding flash memory card inserted therein. The card reader further includes a second EUSB connector to be coupled to an external EUSB device using the extended USB protocols, which is one of an EUSB slave device and an EUSB hub device. Other methods and apparatuses are also described.
摘要翻译：本文描述了扩展的通用串行总线（USB）读卡器设备。在一个实施例中，读卡器包括要耦合到外部主机系统的第一扩展USB（EUSB）连接器，能够接收插入其中的多个闪存卡的多个闪存卡插槽，耦合到多个闪存的多个闪存控制器卡插座。读卡器还包括用于存储可执行代码的存储器，耦合到每个闪存控制器的处理器，用于执行可执行代码以控制多个闪存控制器中的每一个以便访问插入其中的相应闪存卡。读卡器还包括使用作为EUSB从设备和EUSB集线器设备之一的扩展USB协议耦合到外部EUSB设备的第二EUSB连接器。还描述了其它方法和装置。

36. 发明授权

US08078794B2 Hybrid SSD using a combination of SLC and MLC flash memory arrays 失效
标题翻译：混合SSD使用SLC和MLC闪存阵列的组合
公开(公告)号：US08078794B2
公开(公告)日：2011-12-13
申请号：US11926743
申请日：2007-10-29
申请人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
发明人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06F13/00
CPC分类号： G06F12/1416 , G06F3/0613 , G06F3/0643 , G06F3/0688 , G06F12/0246 , G06F12/0866 , G06F21/32 , G06F21/78 , G06F2212/2022 , G06F2212/7202 , G07C9/00087 , G11C2211/5641
摘要： Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.
摘要翻译：描述了使用单级单元（SLC）和多级单元（MLC）闪存阵列的组合的混合固态驱动器（SSD）。根据本发明的一个方面，使用组合SLC和MLC闪存阵列构建混合SSD。 SSD还包括一个微控制器，用于控制和协调从主机计算设备到MLC闪存阵列的SLC闪存阵列的数据传输。存储器选择指示符通过基于一个或多个标准进行分类数据文件来确定，所述标准包括但不限于将系统文件和用户目录存储在SLC闪速存储器阵列中并将用户文件存储在MLC闪速存储器阵列中; 或将更频繁的访问文件存储在SLC闪存阵列中，而在MLC闪存阵列中访问的文件较少。

37. 发明申请

US20110197017A1 High Endurance Non-Volatile Memory Devices 失效
标题翻译：高耐久性非易失性存储器件
公开(公告)号：US20110197017A1
公开(公告)日：2011-08-11
申请号：US13089898
申请日：2011-04-19
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/02 , G06F12/08
CPC分类号： G06F12/0246 , G06F12/0866 , G06F2212/214 , G06F2212/7208 , G11C2211/5641
摘要： High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
摘要翻译：描述了高耐久性非易失性存储器件（NVMD）。高耐久性NVMD包括I / O接口，NVM控制器，CPU以及易失性存储器子系统和至少一个非易失性存储器（NVM）模块。易失性存储器缓存子系统被配置为数据高速缓存子系统。当NVMD适用于主机系统时，至少一个NVM模块被配置为数据存储器。 I / O接口被配置为从主机接收数据缓存子系统的传入数据，并将请求数据从数据缓存子系统发送到主机。至少一个NVM模块可以包括至少第一和第二类型的NVM。第一种类型包括SLC闪存，而第二种类型的MLC闪存。 NVM的第一种类型被配置为数据高速缓存子系统和第二类NVM之间的缓冲区。

38. 发明申请

US20110029723A1 Non-Volatile Memory Based Computer Systems 审中-公开
标题翻译：基于非易失性存储器的计算机系统
公开(公告)号：US20110029723A1
公开(公告)日：2011-02-03
申请号：US12885451
申请日：2010-09-18
申请人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
发明人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06K19/07743 , A45C2011/188 , G06K19/07732 , H05K1/117 , H05K1/118 , H05K1/189 , H05K3/284 , H05K3/4691 , H05K2201/091 , H05K2201/10159 , H05K2203/1527
摘要： Non-volatile memory based computer systems and methods are described. According to one aspect of the invention, at least one non-volatile memory module is coupled to a computer system as main storage. The non-volatile memory module is controlled by a northbridge controller configured to control the non-volatile memory as main memory. The page size of the at least one non-volatile memory module is configured to be the size of one of the cache lines associated with a microprocessor of the computer system. According to another aspect, at least one non-volatile memory module is coupled to a computer system as data read/write buffer of one or more hard disk drives. The non-volatile memory module is controlled by a southbridge controller configured to control the non-volatile memory as an input/out device. The page size of the at least one non-volatile memory module is configured in proportion to characteristics of the hard disk drives.
摘要翻译：描述了基于非易失性存储器的计算机系统和方法。根据本发明的一个方面，至少一个非易失性存储器模块耦合到作为主存储器的计算机系统。非易失性存储器模块由配置成将非易失性存储器控制为主存储器的北桥控制器来控制。至少一个非易失性存储器模块的页面大小被配置为与计算机系统的微处理器相关联的高速缓存行之一的大小。根据另一方面，至少一个非易失性存储器模块作为一个或多个硬盘驱动器的数据读/写缓冲器耦合到计算机系统。非易失性存储器模块由配置成将非易失性存储器控制为输入/输出设备的南桥控制器来控制。至少一个非易失性存储器模块的页面大小被配置成与硬盘驱动器的特性成比例。

39. 发明申请

US20080215800A1 Hybrid SSD Using A Combination of SLC and MLC Flash Memory Arrays 失效
标题翻译：混合SSD使用SLC和MLC闪存阵列的组合
公开(公告)号：US20080215800A1
公开(公告)日：2008-09-04
申请号：US11926743
申请日：2007-10-29
申请人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
发明人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/1416 , G06F3/0613 , G06F3/0643 , G06F3/0688 , G06F12/0246 , G06F12/0866 , G06F21/32 , G06F21/78 , G06F2212/2022 , G06F2212/7202 , G07C9/00087 , G11C2211/5641
摘要： Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.
摘要翻译：描述了使用单级单元（SLC）和多级单元（MLC）闪存阵列的组合的混合固态驱动器（SSD）。根据本发明的一个方面，使用组合SLC和MLC闪存阵列构建混合SSD。 SSD还包括一个微控制器，用于控制和协调从主机计算设备到MLC闪存阵列的SLC闪存阵列的数据传输。存储器选择指示符通过基于一个或多个标准进行分类数据文件来确定，所述标准包括但不限于将系统文件和用户目录存储在SLC闪速存储器阵列中并将用户文件存储在MLC闪速存储器阵列中; 或将更频繁的访问文件存储在SLC闪存阵列中，而在MLC闪存阵列中访问的文件较少。

40. 发明授权

US07953931B2 High endurance non-volatile memory devices 有权
标题翻译：高耐久性非易失性存储器件
公开(公告)号：US07953931B2
公开(公告)日：2011-05-31
申请号：US12035398
申请日：2008-02-21
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/12
CPC分类号： G06F13/161 , G06F12/0246 , G06F12/0862 , G06F12/123 , G06F2212/7203 , G11C11/5621 , G11C11/5678 , G11C13/0004 , G11C2211/5641 , G11C2211/5643
摘要： High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
摘要翻译：描述了高耐久性非易失性存储器件（NVMD）。高耐久性NVMD包括I / O接口，NVM控制器，CPU以及易失性存储器子系统和至少一个非易失性存储器（NVM）模块。易失性存储器缓存子系统被配置为数据高速缓存子系统。当NVMD适用于主机系统时，至少一个NVM模块被配置为数据存储器。 I / O接口被配置为从主机接收数据缓存子系统的传入数据，并将请求数据从数据缓存子系统发送到主机。至少一个NVM模块可以包括至少第一和第二类型的NVM。第一种类型包括SLC闪存，而第二种类型的MLC闪存。 NVM的第一种类型被配置为数据高速缓存子系统和第二类NVM之间的缓冲区。

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