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    • 31. 发明授权
    • Metal-jacketed lead manufacturing process using resist layers
    • 使用抗蚀剂层的金属外壳铅制造工艺
    • US06248656B1
    • 2001-06-19
    • US09374394
    • 1999-08-13
    • David R. BakerJohn GrangeDavid LightHung-Ming Wang
    • David R. BakerJohn GrangeDavid LightHung-Ming Wang
    • H01L2144
    • H01L21/4857H01L21/486
    • Metal leads are formed on a copper conductive layer by applying a first resist and a main resist over the first resist, and forming aligned openings in these resist. A bottom layer of cover metal such as gold is plated onto the copper conductive layer in these openings, followed by a principal metal such as copper. The main resist is then removed so as to expose edges of the principal metal layer. A jacket of cover metal is plated onto the exposed edges and surfaces of the principal metal layer. During this stage, the first resist prevents deposition of the cover metal except on the leads. The jacket merges with the bottom layer of cover material, so as to form a continuous coating extending around the perimeters of the leads. The first resist is removed, and the conductive layer is etched away. The cover metal protects the principal metal during the etching stage.
    • 通过在第一抗蚀剂上施加第一抗蚀剂和主抗蚀剂,在铜导电层上形成金属引线,并在这些抗蚀剂中形成对准的开口。 覆盖金属如金的底层被镀在这些开口中的铜导电层上,随后是诸如铜的主要金属。 然后去除主抗蚀剂以暴露主金属层的边缘。 将覆盖金属的护套电镀在主金属层的暴露的边缘和表面上。 在这个阶段,第一个抗蚀剂防止除了引线之外的覆盖金属的沉积。 护套与覆盖材料的底层合并,以形成围绕引线周边延伸的连续涂层。 去除第一抗蚀剂,并且蚀刻掉导电层。 覆盖金属在蚀刻阶段保护主要金属。
    • 39. 发明授权
    • Layered metal structure for interconnect element
    • 用于互连元件的分层金属结构
    • US07696439B2
    • 2010-04-13
    • US11801336
    • 2007-05-09
    • David Light
    • David Light
    • H01B7/18H05K1/00
    • H05K3/062H05K3/202H05K2201/0361H05K2203/0384Y10T29/49224
    • A layered metal structure is provided in accordance with an aspect of the invention. The structure can be used, for example, to fabricate a conductive interconnect element for conductively interconnecting one or more microelectronic elements. The layered structure includes first and second metal layers each of which may include one or more of copper or aluminum, for example. An intervening layer, may include for example, chromium between the first and second metal layers, chromium being resistant to an etchant usable to pattern the first and second metal layers selectively to the intervening layer. An etchant such as cupric chloride, ferric chloride (FeCl3), a peroxysulfuric composition, or a persulfate composition may be used to pattern the first and second metal layers in such case.
    • 根据本发明的一个方面提供了层状金属结构。 该结构可以用于例如制造导电互连一个或多个微电子元件的导电互连元件。 层状结构包括例如可以包括铜或铝中的一种或多种的第一和第二金属层。 中间层可以包括例如在第一和第二金属层之间的铬,铬耐腐蚀剂可以选择性地将第一和第二金属层图案化成中间层。 在这种情况下,可以使用诸如氯化铜,氯化铁(FeCl 3),过氧化硫组合物或过硫酸盐组合物的蚀刻剂来图案化第一和第二金属层。