专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US06930045B2 Cross reference to related application 有权
标题翻译：交叉参考相关应用
公开(公告)号：US06930045B2
公开(公告)日：2005-08-16
申请号：US10634838
申请日：2003-08-06
申请人： Masanobu Ikeda
发明人： Masanobu Ikeda
IPC分类号： H01L21/306 , H01L21/312 , H01L21/768 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/76811 , H01L21/76813
摘要： The method comprises the step of forming a diffusion preventing film 16 and an insulation film 18 on an insulation film 12 formed on a substrate 10 and having a Cu interconnection layer 14 buried in; the step of forming a contact hole 20 in the insulation film 18 down to the Cu interconnection layer 14; the step of cleaning the substrate 10 with the contact hole 20 formed with a chemical liquid; the step of drying the substrate 10 cleaned with the chemical liquid; and the step of annealing the dried substrate in a reducing atmosphere.
摘要翻译：该方法包括在形成在衬底10上并具有埋入Cu互连层14的绝缘膜12上形成防扩散膜16和绝缘膜18的步骤; 在绝缘膜18中形成接触孔20到Cu互连层14的步骤; 用形成有化学液体的接触孔20清洗基板10的步骤; 干燥用化学液体清洗的基板10的步骤; 以及在还原气氛中对干燥的基材进行退火的工序。

32. 发明授权

US08089162B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08089162B2
公开(公告)日：2012-01-03
申请号：US12538410
申请日：2009-08-10
申请人： Kenichi Watanabe , Masanobu Ikeda , Takahiro Kimura
发明人： Kenichi Watanabe , Masanobu Ikeda , Takahiro Kimura
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L24/05 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/45 , H01L2224/0401 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05546 , H01L2224/05647 , H01L2224/45124 , H01L2224/48747 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/04953 , H01L2924/05042 , H01L2924/13091 , H01L2924/30105 , H01L2924/00014 , H01L2924/00
摘要： In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
摘要翻译：在与元件形成区域相关联地形成有低介电常数绝缘膜的元件形成区域与外部电连接的焊盘形成区域中，形成在低介电常数绝缘膜中的通孔的Cu膜焊盘形成区域以比元件形成区域中的通孔用的Cu膜的密度高的方式设置。因此，当发生内部应力时，防止应力不成比例地集中在通孔上，并且可以避免由此引起的布线的功能的劣化。

33. 发明申请

US20090149031A1 Method of making a semiconductor device with residual amine group free multilayer interconnection 审中-公开
标题翻译：制备具有残留的无胺基多层互连的半导体器件的方法
公开(公告)号：US20090149031A1
公开(公告)日：2009-06-11
申请号：US12289227
申请日：2008-10-23
申请人： Katsumi Kakamu , Hirofumi Watatani , Masanobu Ikeda
发明人： Katsumi Kakamu , Hirofumi Watatani , Masanobu Ikeda
IPC分类号： H01L21/31 , H01L21/02
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02129 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/31144 , H01L21/31612 , H01L21/3185 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device that can restrict the dissolution hindering phenomenon in a chemically amplified resist film. More specifically, after the formation of a contact pattern on a semiconductor substrate, a wiring pattern is formed on the contact pattern. A SiC film, a first SiOC film, a SiC film, a second SiOC film, a USG film as a diffusion preventing film, and a silicon nitride film as a reflection preventing film, are formed on the wiring pattern. A dual damascene structure is then formed using the chemically amplified resist film and another chemically amplified resist film. In this manner, the N2 gas generated during the formation of the silicon nitride film as a reflection preventing film can be prevented from diffusing into the second SiOC film formed under the silicon nitride film. Accordingly, the reaction of the N2 gas with the H group contained in the second SiOC film and the generation of an amine group such as NH in the second SiOC film can be prevented. Thus, the dissolution hindering phenomenon in the chemically amplified resist film can be avoided.
摘要翻译：本发明提供一种可以限制化学放大抗蚀剂膜中的溶解阻碍现象的半导体器件。更具体地，在半导体衬底上形成接触图案之后，在接触图案上形成布线图案。在布线图案上形成SiC膜，第一SiOC膜，SiC膜，第二SiOC膜，作为扩散防止膜的USG膜和作为防反射膜的氮化硅膜。然后使用化学放大抗蚀剂膜和另一种化学放大抗蚀剂膜形成双镶嵌结构。以这种方式，可以防止在形成作为反射防止膜的氮化硅膜形成期间产生的N 2气体扩散到在氮化硅膜下形成的第二SiOC膜中。因此，可以防止在第二SiOC膜中包含的N 2气体与H基团的反应，并且可以防止在第二SiOC膜中产生诸如NH的胺基团。因此，可以避免化学放大抗蚀剂膜中的溶解阻碍现象。

34. 发明授权

US06949828B2 Wiring structure having integral wiring portion and plug portion and method of forming the same 有权
标题翻译：具有整体布线部分和插头部分的布线结构及其形成方法
公开(公告)号：US06949828B2
公开(公告)日：2005-09-27
申请号：US10374524
申请日：2003-02-27
申请人： Masanobu Ikeda , Takashi Suzuki
发明人： Masanobu Ikeda , Takashi Suzuki
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532 , H01L29/73 , H01L29/40 , H01L23/48 , H01L23/52
CPC分类号： H01L23/5283 , H01L23/5226 , H01L23/53228 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： In a wiring structure in which a wiring portion and a plug portion each made of a Cu material are formed integrally through a damascene process, the difference between deviation stress applied to the wiring portion in a longitudinal direction and deviation stress applied to the plug portion in a direction perpendicular to the central axis of the plug portion is controlled to be 220 MPa or less.
摘要翻译：在通过镶嵌工艺一体地形成由Cu材料制成的布线部分和塞子部分的布线结构中，施加到布线部分的纵向方向的偏差应力与施加到插塞部分的偏差应力之间的差异将与插头部的中心轴垂直的方向控制在220MPa以下。

35. 发明授权

US06638795B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06638795B2
公开(公告)日：2003-10-28
申请号：US10006239
申请日：2001-12-10
申请人： Masanobu Ikeda , Satoshi Otsuka
发明人： Masanobu Ikeda , Satoshi Otsuka
IPC分类号： H01L2182
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A redundancy fuse is made up of a Cu—Al alloy film and a TiN film covering the surrounding surface of this Cu—Al alloy film. When this fuse is cut, the Cu—Al alloy film in the cut portion thermally diffuses by an abrupt temperature rise, and Al preferentially combines with oxygen because Al is baser than Cu. Al oxidizes in the atmosphere, and AlOx as the stable metal oxide produced sticks to the cut surfaces of the redundancy fuse to form a film in self-alignment. This film functions as a protective film to prevent the generation of corrosion.
摘要翻译：冗余保险丝由Cu-Al合金膜和覆盖该Cu-Al合金膜的周围表面的TiN膜构成。当该熔丝被切断时，切割部分的Cu-Al合金膜由于突然的温度升高而热扩散，并且Al优先与氧结合，因为Al比Cu低。 Al在大气中氧化，产生稳定的金属氧化物的AlOx粘附到冗余熔丝的切割表面，以形成自对准的膜。该膜用作保护膜以防止产生腐蚀。

36. 发明授权

US4790516A Reactor for iron making 失效
标题翻译：炼铁反应堆
公开(公告)号：US4790516A
公开(公告)日：1988-12-13
申请号：US865301
申请日：1986-05-21
申请人： Saburo Sugiura , Masanobu Ikeda , Noboru Demukai
发明人： Saburo Sugiura , Masanobu Ikeda , Noboru Demukai
IPC分类号： C21B11/08 , C21B11/00 , C21C5/56 , C21C7/00 , F27B3/22
CPC分类号： C21C5/562 , C21B11/00 , C21C2007/0093 , Y02P10/216 , Y10S266/90 , Y10S266/901
摘要： A reactor for iron making having an upper gas blowing nozzle, a lower gas blowing nozzle, and an iron scrap charging inlet. A vertical shaft is installed directly above the inlet at the top part of the reactor. A mechanism is provided in the lower end of the vertical shaft for controlling charging of the iron scrap to the reactor. A by-pass tube is connected between the top part of the reactor and a gas inlet in the vertical shaft directly above the mechanism for controlling the charging of iron scrap and permits exit of high temperature exhaust gases from the reactor and introduces the exhaust gases to flow through the iron scrap in the vertical shaft to pre-heat the same. Structure is provided in the by-pass tube for introducing oxygen gas or air into the high temperature exhaust gases to react therewith and generate further heat. The structure can comprise a nozzle. The mechanism for controlling charging of iron scrap can include a damper positioned immediately above the inlet in the top part of the reactor which is movable to open and close the vertical shaft together with a stopper positioned above the damper and movable to open and close the vertical shaft. Certain amounts of iron scrap can thereby be charged to the reactor by sequential openings and closings of the damper and the stopper.
摘要翻译：一种用于制铁的反应器，其具有上部气体喷射喷嘴，下部气体吹送喷嘴和废铁填充入口。垂直轴安装在反应堆顶部的进口正上方。在垂直轴的下端设有机构，用于控制废铁向反应堆的充电。旁通管连接在反应器的顶部和直接在机构上方的垂直轴中的气体入口之间，用于控制废铁的充电，并允许从反应器排出高温废气并将排气引入流过垂直轴中的废铁，以预加热。在旁通管中设置有用于将氧气或空气引入高温废气中的结构与其反应并产生进一步的热量。该结构可以包括喷嘴。用于控制废铁充电的机构可以包括位于反应器顶部的入口正上方的阻尼器，其可移动以与位于阻尼器上方的止动件一起打开和关闭垂直轴，并可移动以打开和关闭垂直轴。因此，通过顺序地开启和关闭阻尼器和塞子，可以将一定量的废铁装入反应器。

37. 发明授权

US08156315B2 Information processing apparatus and operation method of the same 有权
标题翻译：信息处理装置及其操作方法相同
公开(公告)号：US08156315B2
公开(公告)日：2012-04-10
申请号：US12306312
申请日：2008-12-15
申请人： Naoshi Nishi , Tatsuo Namba , Masanobu Ikeda
发明人： Naoshi Nishi , Tatsuo Namba , Masanobu Ikeda
IPC分类号： H04L29/06 , G06F11/00
CPC分类号： G06F11/2289
摘要： Provided is a service processor (SVP) 10 that validates a configuration of a storage system 1 having a server device 30, a storage device 20 providing the server device with a storage area, and a FC switch 40 coupling the storage device 20 and the server device 30. The SVP 10 includes a configuration information storing part 11 which acquires predetermined constituent element information from the storage device 1 and stores the predetermined constituent element information on a configuration management table 200; a configuration change detecting part 12 which compares constituent element information stored in the configuration management table 200 and the acquired constituent element information, and determines whether there is a change in a constituent element, and if there is a change, determines whether, in a vendor certification information database 50, there is a constituent element after changing which has received certification; a vendor certification test conducting part 13 which conducts a vendor certification test targeted for a storage system 1, if there is no constituent element having received certification; and a data storing part 14 which stores a result of the vendor certification test in a constituent element determination table 400 of the storage system 1.
摘要翻译：提供了一种服务处理器（SVP）10，其验证具有服务器设备30的存储系统1的配置，为服务器设备提供存储区域的存储设备20以及耦合存储设备20和服务器的FC交换机40 SVP10包括配置信息存储部11，其从存储装置1获取预定的构成要素信息，并将预定的构成要素信息存储在配置管理表200上; 比较配置管理表200中存储的构成要素信息和获取的构成要素信息的配置变更检测部12，判定构成要素是否存在变化，如果存在变更，则判定在供应商认证信息数据库50，变更后的构成要素已经认证; 执行第13部分的供应商认证测试，如果没有已经接受认证的组成元件，则进行针对存储系统1的供应商认证测试; 以及数据存储部分14，其将供应商认证测试的结果存储在存储系统1的组成元素确定表400中。

38. 发明申请

US20120044203A1 DISPLAY DEVICE WITH TOUCH DETECTION FUNCTION, TOUCH DETECTION DEVICE, AND ELECTRONIC UNIT 有权
标题翻译：具有触摸检测功能的显示设备，触摸检测设备和电子单元
公开(公告)号：US20120044203A1
公开(公告)日：2012-02-23
申请号：US13211393
申请日：2011-08-17
申请人： Koji Ishizaki , Masanobu Ikeda , Yasuyuki Matsui
发明人： Koji Ishizaki , Masanobu Ikeda , Yasuyuki Matsui
IPC分类号： G06F3/041
CPC分类号： G06F3/0412 , G02F1/13338 , G06F3/0416 , G06F3/044
摘要： A display device with a touch detection function includes a plurality of touch detection electrodes arranged in parallel to extend in one direction, formed with a predetermined electrode pattern including an electrode portion and aperture portions, and each outputting a detection signal based on a change of an electrostatic capacitance in response to an external proximity object, a plurality of display elements formed in a layer different from a layer provided with the touch detection electrodes, and arranged by a predetermined number in a width direction in a region corresponding to the touch detection electrode, and a plurality of dummy electrodes arranged in an inter-detection-electrode region of the plurality of touch detection electrodes. The aperture portions are provided to allow an arrangement area ratio of the touch detection electrode to be almost equal to an arrangement area ratio of the dummy electrodes in the inter-detection-electrode region.
摘要翻译：具有触摸检测功能的显示装置包括：多个平行布置的触摸检测电极，其在一个方向上延伸，形成有包括电极部分和开口部分的预定电极图案，并且每个输出检测信号基于响应于外部接近物体的静电电容，形成在与设置有触摸检测电极的层不同的层中的多个显示元件，并且在对应于触摸检测电极的区域中以宽度方向布置预定数量，以及布置在多个触摸检测电极的检测间电极区域中的多个虚拟电极。孔径部分被设置成允许触摸检测电极的布置面积比几乎等于检测间电极区域中的虚设电极的布置面积比。

39. 发明授权

US07041586B2 Semiconductor device having a multilayer interconnection structure 有权
公开(公告)号：US07041586B2
公开(公告)日：2006-05-09
申请号：US10105190
申请日：2002-03-26
申请人： Hiroshi Kudo , Masanobu Ikeda , Kenichi Watanabe , Yoshiyuki Ohkura
发明人： Hiroshi Kudo , Masanobu Ikeda , Kenichi Watanabe , Yoshiyuki Ohkura
IPC分类号： H01L21/44
CPC分类号： H01L23/5329 , H01L21/76802 , H01L21/76819 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L21/76837 , H01L21/7684 , H01L21/76882 , H01L23/5222 , H01L23/53228 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes a multilayer interconnection structure including an organic interlayer insulation film in which a conductor pattern is formed by a damascene process, wherein the organic interlayer insulation film carries thereon an organic spin-on-glass film.

40. 发明授权

US06781237B2 Wiring-inclusive structure and forming method thereof 有权
标题翻译：包括接线的结构及其形成方法
公开(公告)号：US06781237B2
公开(公告)日：2004-08-24
申请号：US10280030
申请日：2002-10-25
申请人： Masanobu Ikeda , Takashi Suzuki
发明人： Masanobu Ikeda , Takashi Suzuki
IPC分类号： H01L2348
CPC分类号： H01L21/314 , C23C16/325 , H01L21/76811 , H01L21/76834 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A wiring which is formed by filling a via hole and a wiring trench with Cu via a base film is formed by a damascene method. Thereafter, an SiC:H film is formed to cover an upper surface of the wiring. At this time, an N atom content thereof is controlled to be 8 (atm %) to 20 (atm %) by adding an N-containing gas at the time of forming the SiC:H film, thereby causing the film density of the SiC:H film to be 2.1 (g/cm3) or higher.
摘要翻译：通过基底膜通过用Cu填充通孔和布线沟槽而形成的布线通过镶嵌法形成。此后，形成SiC：H膜以覆盖布线的上表面。此时，通过在形成SiC：H膜时添加含N气体，将其N原子含量控制在8（atm％）至20（atm％），从而使SiC的膜密度：H膜为2.1（g / cm 3）以上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式