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    • 31. 发明申请
    • Polycrystalline Silicon For Solar Cell And Preparation Method Thereof
    • 太阳能电池用多晶硅及其制备方法
    • US20120251426A1
    • 2012-10-04
    • US13515426
    • 2010-10-20
    • Kenji Sato
    • Kenji Sato
    • C01B33/021C01B33/02
    • B22D25/02
    • The present invention provides a process for preparing a polycrystalline silicon having the surface layer in which the areas having a short carrier lifetime due to Fe has been substantially eliminated. A preparation method of polycrystalline silicon comprising preparing a mold evenly applied with a mold release agent produced by mixing a binder and a solvent with a silicon nitride powder and then solidifying a molten silicon in said mold, wherein x≦5.0, 20≦y≦100 and x×y≦100 are satisfied given that x represents a concentration of Fe (atomic ppm) contained as impurity in the silicon nitride powder and y represents a thickness of the mold release agent (μm) applied to the mold.
    • 本发明提供一种制备具有表面层的多晶硅的方法,其中基本上消除了由于Fe而具有短载流子寿命的区域。 1.一种多晶硅的制备方法,其特征在于,制备均匀地涂敷有通过将粘合剂和溶剂与氮化硅粉末混合而制成的脱模剂的模具,然后使所述模具中的熔融硅固化,其中,x< 5.0,20& nlE; y& 并且x表示在氮化硅粉末中作为杂质含有的Fe(原子ppm)的浓度,y表示施加到模具上的脱模剂的厚度(μm),x×y≦̸ 100。
    • 32. 发明申请
    • OPTICAL MODULATION DEVICE AND OPTICAL MODULATION METHOD
    • 光学调制装置和光学调制方法
    • US20120224856A1
    • 2012-09-06
    • US13508721
    • 2010-09-28
    • Kenji SatoShinya Sudo
    • Kenji SatoShinya Sudo
    • H04J14/00
    • H04B10/5053G02F2203/56H04B10/516
    • The present invention has an object to provide an optical modulation device and an optical modulation method that achieve an excellent spectral efficiency with a simple and compact configuration and low power consumption. An optical modulation device according to an exemplary aspect of the present invention includes a CW light source (11), a coupler (12), optical modulators (14a) and (14b), an optical frequency shifter (15b), a serial-to-parallel converter (21), and a delay circuit (24a). The serial-to-parallel converter (21) divides a data signal having a bit rate B into two data strings having a bit rate B/2, and extracts a clock signal (CLK). The delay circuit (24a) temporally synchronizes the two data strings. CW light emitted from the CW light source is split into two beams by the coupler (12). The optical modulators (14a) and (14b) generate optical signals by modulating the two split light beams according to the data strings. The optical frequency shifter (15b) shifts center frequencies of the optical signals by Δf=B/(2×2) according to the clock signal (CLK).
    • 本发明的目的是提供一种光调制装置和光调制方法,其以简单紧凑的结构和低功耗实现了优异的光谱效率。 根据本发明的示例性方面的光调制装置包括CW光源(11),耦合器(12),光调制器(14a)和(14b),光移频器(15b),串 - 并联转换器(21)和延迟电路(24a)。 串行到并行转换器(21)将具有比特率B的数据信号分成具有比特率B / 2的两个数据串,并提取时钟信号(CLK)。 延迟电路(24a)在时间上同步两个数据串。 从CW光源发射的CW光被耦合器(12)分成两束。 光调制器(14a)和(14b)通过根据数据串调制两个分束光束来产生光信号。 光移位器(15b)根据时钟信号(CLK)将光信号的中心频率移位&Dgr; f = B /(2×2)。
    • 33. 发明申请
    • HEAT TREATMENT METHOD OF ZNTE SINGLE CRYSTAL SUBSTRATE AND ZNTE SINGLE CRYSTAL SUBSTRATE
    • ZNTE单晶基板和ZNTE单晶基板的热处理方法
    • US20110236297A1
    • 2011-09-29
    • US13158618
    • 2011-06-13
    • Toshiaki AsahiKenji SatoTakayuki Shimizu
    • Toshiaki AsahiKenji SatoTakayuki Shimizu
    • C01B19/04
    • C30B29/48C30B33/02H01L21/477
    • The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.
    • 本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法,以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括:将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤,其中第一热处理温度T1设定在一定范围内 的温度为700℃,N 2; T1≦̸ 1250℃,第二热处理温度T2设定在T2< 1N; T1-50的范围内。
    • 36. 发明申请
    • MAGNETIC RECORDING MEDIUM MANUFACTURING DEVICE
    • 磁记录介质制造设备
    • US20110186225A1
    • 2011-08-04
    • US13055329
    • 2009-07-21
    • Tsutomu NishihashiTadashi MoritaKazuhiro WatanabeKenji SatoTakuya UzumakiTsutomu Tanaka
    • Tsutomu NishihashiTadashi MoritaKazuhiro WatanabeKenji SatoTakuya UzumakiTsutomu Tanaka
    • H01L21/3065
    • G11B5/855
    • A magnetic recording medium is manufactured without the disappearance of the surface of a substrate that comprises a magnetic recording layer by ion milling and without being influenced by the atmosphere. A magnetic recording medium manufacturing device manufactures a magnetic recording medium by implanting an ion beam into a substrate that comprises a magnetic recording layer and removing by ashing the surface of the substrate that comprises the magnetic recording layer after the ion beam is implanted. The magnetic recording medium manufacturing device comprising an ion implantation chamber for implanting the ion beam into the substrate that comprises the magnetic recording layer coated with a resist film or a metal mask, and an ashing chamber for removing, by ashing, with plasma, the resist film or the metal mask of the substrate that comprises the magnetic recording layer coated with the resist film or the metal mask. The ion implantation chamber and the ashing chamber are coupled in a vacuum state. The magnetic recording medium manufactured device is provided with a substrate carrier for carrying the substrate into which the ion beam is implanted from the ion implantation chamber to the ashing chamber.
    • 通过离子研磨而不受大气的影响,制造磁记录介质,而不会消失包括磁记录层的基板的表面。 磁记录介质制造装置通过将离子束注入到包含磁记录层的基板中,并且在离子束被植入之后通过灰化包括磁记录层的基板的表面去除而制造磁记录介质。 该磁记录介质制造装置包括用于将离子束注入基片的离子注入室,所述离子注入室包括涂覆有抗蚀剂膜或金属掩模的磁记录层,以及灰化室,用灰浆除去等离子体, 膜或包含涂覆有抗蚀剂膜或金属掩模的磁记录层的基板的金属掩模。 离子注入室和灰化室在真空状态下耦合。 磁记录介质制造装置设置有用于承载离子束从离子注入室注入至灰化室的基板的基板载体。
    • 38. 发明申请
    • MUSICAL TONE SIGNAL-PROCESSING APPARATUS
    • 音乐信号处理装置
    • US20110132178A1
    • 2011-06-09
    • US12947671
    • 2010-11-16
    • Kenji SatoTakaaki Hagino
    • Kenji SatoTakaaki Hagino
    • G10H7/00
    • H04S5/02H04S7/40H04S2400/11H04S2420/07
    • A musical tone signal processing apparatus configured to freely expand or contract an acoustic image. A setting means may set a second reference localization, a first function that stipulates expansion of the boundary of one end of a direction range, and a second function that stipulates expansion of the boundary of an other end of said direction range. In addition, an output direction indicated by localization information of an extraction signal that exists in the direction range in which the conditions have been set in this manner is shifted by an acoustic image scaling means. The acoustic image in said direction range is expanded or contracted accordingly. In other words, the acoustic image formed by the extraction signal is expanded or contracted by shifting the output direction for each extraction signal extracted from within the direction range.
    • 音乐信号处理装置,被配置为自由地扩展或收缩声像。 设置装置可以设定第二参考定位,规定方向范围的一端的边界的扩展的第一功能和规定所述方向范围的另一端的边界的扩展的第二功能。 此外,存在于以这种方式设定条件的方向范围内的提取信号的定位信息指示的输出方向由声像缩放装置移位。 所述方向范围内的声像被相应地扩大或收缩。 换句话说,通过从在方向范围内提取的每个提取信号的输出方向偏移来扩展或缩小由提取信号形成的声像。
    • 40. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20110024749A1
    • 2011-02-03
    • US12936559
    • 2009-04-07
    • Kenji Sato
    • Kenji Sato
    • H01L31/0272
    • H01L27/14618H01L31/0203H01L2924/0002H01L2924/00
    • A radiation detector of this invention has an insulating, non-amine barrier layer disposed between exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, and a curable synthetic resin film.This barrier layer can further inhibit a chemical reaction between the semiconductor layer and curable synthetic resin film, and can prevent an increase in dark current which flows through the semiconductor layer. Since no chemical reaction occurs between the barrier layer and semiconductor layer, the semiconductor layer will never be degraded. Further, with an auxiliary plate disposed on an upper surface of the curable synthetic resin film, it is possible to manufacture a radiation detector free from warpage and cracking due to temperature change.
    • 本发明的放射线检测器具有设置在辐射敏感半导体层,载体选择性高电阻膜和公共电极的露出表面之间的绝缘非胺阻挡层和可固化合成树脂膜。 该阻挡层可以进一步抑制半导体层与可固化合成树脂膜之间的化学反应,并且可以防止流过半导体层的暗电流的增加。 由于在阻挡层和半导体层之间不发生化学反应,所以半导体层不会劣化。 此外,通过设置在可固化合成树脂膜的上表面上的辅助板,可以制造由于温度变化而没有翘曲和破裂的辐射检测器。