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31. 发明申请

US20120157131A1 METHOD OF LOW-DUTY MODE OPERATION OF FEMTOCELL BASE STATION 有权
标题翻译： FEMTOCELL基站的低负荷模式运行方法
公开(公告)号：US20120157131A1
公开(公告)日：2012-06-21
申请号：US13393213
申请日：2010-08-10
申请人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Silk Yoon
发明人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Silk Yoon
IPC分类号： H04W68/00
CPC分类号： H04W68/00 , H04W84/045
摘要： A method of setting a cycle of a low-duty mode in a femto base station is provided. The cycle of the low-duty mode has a pattern in which an available interval and an unavailable interval repeatedly appear, and the available interval is set to include a paging listening interval of a paging cycle. A method of setting a cycle of a low-duty mode in a femto base station having a service area overlapping with that of a macrocell is provided. An unavailable interval is set by taking the overlapping degree of the service area of the femto base station with the macrocell into consideration. A method of setting a cycle of a low-duty mode in a plurality of femto base stations operated in the low-duty mode is provided. The same cycle can be set for a plurality of base stations.
摘要翻译：提供了一种在毫微微基站中设置低占空比模式的周期的方法。低功率模式的周期具有重复出现可用间隔和不可用间隔的模式，并且可用间隔被设置为包括寻呼周期的寻呼监听间隔。提供了在具有与宏小区的服务区域重叠的服务区域的毫微微基站中设置低负载模式的周期的方法。通过考虑具有宏小区的毫微微基站的服务区域的重叠度来设置不可用间隔。提供一种在低功率模式下操作的多个毫微微基站中设置低占空比模式的周期的方法。可以为多个基站设置相同的周期。

32. 发明申请

US20110111570A1 METHODS OF FABRICATING NON-VOLATILE MEMORY DEVICES INCLUDING DOUBLE DIFFUSED JUNCTION REGIONS 有权
标题翻译：制造非易失性记忆装置的方法，包括双重扩散结区
公开(公告)号：US20110111570A1
公开(公告)日：2011-05-12
申请号：US13010583
申请日：2011-01-20
申请人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
发明人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
IPC分类号： H01L21/8234
CPC分类号： H01L27/11521 , H01L21/26586 , H01L27/115 , H01L27/11524
摘要： A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.
摘要翻译：非易失性存储器件包括半导体衬底上的串选择栅极和接地选择栅极，以及在串选择栅极和地选择栅极之间的衬底上的多个存储单元栅极。第一杂质区域延伸到衬底中到多个存储单元门之间的第一深度。第二杂质区域延伸到衬底中的第二深度，该第二深度大于串选择栅极与紧邻其之间的多个存储单元栅极中的第一深度之间以及在接地选择栅极和最后一个栅极选择栅极之间的第一深度与其紧邻的多个存储单元门。还讨论了相关的制造方法。

33. 发明申请

US20100258793A1 Solution composition for forming oxide thin film and electronic device including the oxide thin film 有权
标题翻译：用于形成氧化物薄膜的溶液组合物和包括氧化物薄膜的电子器件
公开(公告)号：US20100258793A1
公开(公告)日：2010-10-14
申请号：US12662292
申请日：2010-04-09
申请人： Jong-Baek Seon , Hyun-Jae Kim , Sang-Yoon Lee , Myung-Kwan Ryu , Hyun-Soo Shin , Kyung-Bae Park , Woong-Hee Jeong , Gun-Hee Kim , Byung-Du Ahn
发明人： Jong-Baek Seon , Hyun-Jae Kim , Sang-Yoon Lee , Myung-Kwan Ryu , Hyun-Soo Shin , Kyung-Bae Park , Woong-Hee Jeong , Gun-Hee Kim , Byung-Du Ahn
IPC分类号： H01L29/786 , H01B1/02 , H01B1/12 , H01B1/22
CPC分类号： H01L29/7869
摘要： A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
摘要翻译：用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。锌和铪可以以约1:0.01至约1:1的原子比包括在内。

34. 发明申请

US20100011046A1 APPARATUS AND METHOD FOR VARIABLE FAST FOURIER TRANSFORM 有权
标题翻译：用于可变快速傅立叶变换的装置和方法
公开(公告)号：US20100011046A1
公开(公告)日：2010-01-14
申请号：US12517781
申请日：2007-06-18
申请人： Young-Jin Moon , Hyun-Jae Kim , Ki-Seok Kim , Young-Il Kim
发明人： Young-Jin Moon , Hyun-Jae Kim , Ki-Seok Kim , Young-Il Kim
IPC分类号： G06F17/14
CPC分类号： G06F17/142
摘要： The present invention relates to an apparatus and method for variable fast Fourier transform. According to an embodiment of the present invention, two n-point fast Fourier transform (FFT) processors are used to generate two n-point FFT output data or one 2n-point FFT output data. The one 2n-point input data is alternately input to the two n-point FFT processors. Each of the two n-point FFT processors selects a twiddle factor for the n-point input data or the 2n-point input data and performs fast Fourier transform. A butterfly operation is performed on signals obtained by performing fast Fourier transform on the 2n-point input data signal, and the processed signals are aligned in an output order. According to this structure, it is possible to realize a fast Fourier transform hardware engine that selectively performs multi-frequency allocation in a base station system that supports the multi-frequency allocation.
摘要翻译：本发明涉及一种用于可变快速傅里叶变换的装置和方法。根据本发明的实施例，使用两个n点快速傅里叶变换（FFT）处理器来产生两个n点FFT输出数据或一个2n点FFT输出数据。一个2n点输入数据交替地输入到两个n点FFT处理器。两个n点FFT处理器中的每一个为n点输入数据或2n点输入数据选择旋转因子，并执行快速傅里叶变换。对通过对2n点输入数据信号执行快速傅里叶变换获得的信号执行蝶形运算，并且处理的信号以输出顺序对准。根据该结构，能够实现在支持多频分配的基站系统中选择性地进行多频分配的快速傅里叶变换硬件引擎。

35. 发明授权

US07294538B2 Method of polycrystallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor 有权
标题翻译：多晶化方法，多晶硅薄膜晶体管的制造方法及其激光照射装置
公开(公告)号：US07294538B2
公开(公告)日：2007-11-13
申请号：US10532459
申请日：2003-10-21
申请人： Hyun-Jae Kim , Myung-Koo Kang
发明人： Hyun-Jae Kim , Myung-Koo Kang
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , B23K26/02 , B23K26/066 , H01L21/02532 , H01L21/0268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector, and an absorber for absorbing the laser beam reflected by the reflector.
摘要翻译：用于将激光束照射到形成在基板上的非晶硅薄膜上的装置。该装置包括：安装基板的台架; 用于产生激光束的激光振荡器; 用于将激光束聚焦并引导到薄膜上的投影透镜; 用于反射引导到薄膜上的激光束的反射器; 用于控制反射器的位置的控制器和用于吸收由反射器反射的激光束的吸收体。

36. 发明申请

US20070230096A1 Slim type portable terminal 失效
标题翻译：超薄型便携式终端
公开(公告)号：US20070230096A1
公开(公告)日：2007-10-04
申请号：US11453851
申请日：2006-06-16
申请人： Shin-Dong Ryu , Hyun-Jae Kim
发明人： Shin-Dong Ryu , Hyun-Jae Kim
IPC分类号： H05K5/00
CPC分类号： H04M1/0202 , H01R12/7076 , H04M1/0235 , H04M1/0266
摘要： A slim type portable terminal is provided comprising a first housing on which a keypad and a microphone unit are arranged, and a second housing comprising a liquid crystal display unit and a speaker unit, in which a printed circuit board is disposed adjacent to the liquid crystal display unit and arranged side by side with the liquid crystal display unit on a co-planar surface, and a buffer member is attached to an upper surface of the liquid crystal display unit, through which a flexible circuit provided to the terminal extends.
摘要翻译：提供了一种细长型便携式终端，包括：第一壳体，其上布置有键盘和麦克风单元;以及第二壳体，包括液晶显示单元和扬声器单元，其中印刷电路板邻近液晶显示单元，并排配置在共面上的液晶显示单元，缓冲部件安装在液晶显示单元的上表面，通过该液晶显示单元设置在端子上的柔性电路延伸。

37. 发明申请

US20070121666A1 Apparatus and method for allocating subchannel and power in communication system, and transmitting apparatus 有权
标题翻译：在通信系统中分配子信道和功率的装置和方法以及发送装置
公开(公告)号：US20070121666A1
公开(公告)日：2007-05-31
申请号：US11604931
申请日：2006-11-28
申请人： Hyun-Jae Kim , Jung-Hoon Oh , Young-Il Kim
发明人： Hyun-Jae Kim , Jung-Hoon Oh , Young-Il Kim
IPC分类号： H04L12/43
CPC分类号： H04L27/2608 , H04W52/223 , H04W52/281 , H04W52/346
摘要： In a communication system, subchannel state information for a plurality of user equipments (UEs) are collected, and a plurality of subchannel state prediction parameter values for the respective UEs are calculated using the subchannel state information. In addition, the communication system allocates at least one subchannel among the plurality of subchannels to a first UE having the highest priority. Subsequently, the communication system determines whether to allocate additional power to the at least one subchannel based on the plurality of subchannel state prediction parameter values, and allocates additional power to a subchannel that needs the additional power among the at least one subchannel.
摘要翻译：在通信系统中，收集用于多个用户设备（UE）的子信道状态信息，并且使用子信道状态信息来计算各个UE的多个子信道状态预测参数值。此外，通信系统将多个子信道中的至少一个子信道分配给具有最高优先级的第一UE。随后，通信系统基于多个子信道状态预测参数值确定是否向至少一个子信道分配附加功率，并且为在至少一个子信道中需要附加功率的子信道分配附加功率。

38. 发明授权

US07217642B2 Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask 有权
标题翻译：用于结晶多晶硅的掩模和使用掩模形成薄膜晶体管的方法
公开(公告)号：US07217642B2
公开(公告)日：2007-05-15
申请号：US10495673
申请日：2002-01-24
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang
IPC分类号： H01L21/20
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0268 , H01L21/2026 , H01L29/66757 , H01L29/78675 , Y10S260/35
摘要： A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line. The slit patterns arranged at the respective slit regions in the vertical direction are spaced from each other with a distance of 8*d. Alternatively, the first to fourth slit regions may be arranged in reverse order, or in the vertical direction.
摘要翻译：用于形成多晶硅的掩模具有第一狭缝区域，其中垂直方向上布置多个水平狭缝图案，同时承载相同的宽度，在垂直方向上布置多个水平狭缝图案的第二狭缝区域，同时承载相同的宽度宽度，在垂直方向上布置多个水平狭缝图案同时具有相同宽度的第三狭缝区域，以及沿垂直方向布置多个水平狭缝图案的第四狭缝区域，同时承载相同的宽度。布置在第一至第四狭缝区域的狭缝图案在第一狭缝区域上与狭缝图案的宽度d成一定比例地沿水平方向的宽度依次增大。沿水平方向布置在第一至第四狭缝区域处的狭缝图案的中心位于相同的线上。在垂直方向的各个狭缝区域上排列的狭缝图案彼此间隔8 * d。或者，第一至第四狭缝区域可以以相反的顺序或在垂直方向上布置。

39. 发明授权

US07183574B2 Thin film transistor with gate electrode portion crossing grain growing direction and liquid crystal display comprising the same 有权
标题翻译：具有与晶粒生长方向交叉的栅电极部分的薄膜晶体管和包括其的液晶显示器
公开(公告)号：US07183574B2
公开(公告)日：2007-02-27
申请号：US10500514
申请日：2003-01-03
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

40. 发明授权

US09185679B2 Method of low-duty mode operation of femtocell base station 有权
标题翻译：毫微微小区基站的低负载模式运行方法
公开(公告)号：US09185679B2
公开(公告)日：2015-11-10
申请号：US13393213
申请日：2010-08-10
申请人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Sik Yoon
发明人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Sik Yoon
IPC分类号： H04W68/00 , H04W84/04
CPC分类号： H04W68/00 , H04W84/045
摘要： A method of setting a cycle of a low-duty mode in a femto base station is provided. The cycle of the low-duty mode has a pattern in which an available interval and an unavailable interval repeatedly appear, and the available interval is set to include a paging listening interval of a paging cycle. A method of setting a cycle of a low-duty mode in a femto base station having a service area overlapping with that of a macrocell is provided. An unavailable interval is set by taking the overlapping degree of the service area of the femto base station with the macrocell into consideration. A method of setting a cycle of a low-duty mode in a plurality of femto base stations operated in the low-duty mode is provided. The same cycle can be set for a plurality of base stations.
摘要翻译：提供了一种在毫微微基站中设置低占空比模式的周期的方法。低功率模式的周期具有重复出现可用间隔和不可用间隔的模式，并且可用间隔被设置为包括寻呼周期的寻呼监听间隔。提供了在具有与宏小区的服务区域重叠的服务区域的毫微微基站中设置低负载模式的周期的方法。通过考虑具有宏小区的毫微微基站的服务区域的重叠度来设置不可用间隔。提供一种在低功率模式下操作的多个毫微微基站中设置低占空比模式的周期的方法。可以为多个基站设置相同的周期。

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