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31. 发明申请

US20050083048A1 Plating system with integrated substrate inspection 审中-公开
标题翻译：具有集成基板检查的电镀系统
公开(公告)号：US20050083048A1
公开(公告)日：2005-04-21
申请号：US10970351
申请日：2004-10-21
申请人： Lawrence Lei , Chen-An Chen
发明人： Lawrence Lei , Chen-An Chen
IPC分类号： B44C1/22 , C25D7/12 , C25D17/00 , C25D21/12 , G01B7/06 , H01L21/00
CPC分类号： G01B7/105 , C25D7/123 , C25D17/00 , C25D21/12 , H01L21/67253
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, and at least one substrate inspection station positioned on either the mainframe or in the loading station. The inspection station is generally configured to use an eddy current sensing device to determine the thickness of a conductive layer on the substrate.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括定位成与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元以及位于大型机或装载站中的至少一个基板检查站。检查站通常被配置为使用涡流检测装置来确定衬底上的导电层的厚度。

32. 发明授权

US06709721B2 Purge heater design and process development for the improvement of low k film properties 失效
标题翻译：吹扫加热器设计和工艺开发，用于改善低k膜性能
公开(公告)号：US06709721B2
公开(公告)日：2004-03-23
申请号：US09820586
申请日：2001-03-28
申请人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Ellie Yieh , Shankar Venkataraman
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Ellie Yieh , Shankar Venkataraman
IPC分类号： C23C1640
CPC分类号： C23C16/45521 , C23C16/401 , C23C16/455 , C23C16/4585 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/31633 , Y10T428/31
摘要： The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.
摘要翻译：本发明提供一种沉积具有低介电常数（k）的碳掺杂氧化硅膜的方法。含有至少载体气体，氧化剂，碳气体源或其组合的工艺气体混合物通过衬底支撑件中的吹扫气体入口邻近衬底的边缘提供，以便于沉积低k碳掺杂氧化硅膜比衬底的内部具有比衬底边缘更高浓度的氧化硅。

33. 发明授权

US06346481B1 Method of reducing pitting of a coated heater 失效
标题翻译：减少涂层加热器点蚀的方法
公开(公告)号：US06346481B1
公开(公告)日：2002-02-12
申请号：US09637839
申请日：2000-08-12
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： H01L21311
CPC分类号： H01J37/32431 , C23C16/4404 , C23C16/46 , H01J2237/2001
摘要： Provided herein is a method of depositing a film on a substrate in a high temperature chemical vapor deposition (CVD) reactor, comprising the steps of polishing sharp corner(s) of the surface of a heater, wherein the heater provides heat to the substrate for deposition; coating the polished heater surface with a coating material; and depositing a film on the substrate in the CVD reactor, wherein the substrate is heated through the coated polished heater. Such method of polishing may also be used for reducing pitting of a coated heater and protecting the heater from corrosive environment in a CVD reactor.
摘要翻译：本文提供了一种在高温化学气相沉积（CVD）反应器中在衬底上沉积膜的方法，包括以下步骤：抛光加热器表面的尖锐角，其中加热器向衬底提供热量，用于沉积用涂料涂覆抛光的加热器表面; 以及在所述CVD反应器中在所述衬底上沉积膜，其中所述衬底通过涂覆的抛光加热器被加热。这种抛光方法也可用于减少涂覆的加热器的点蚀并且保护加热器免受CVD反应器中的腐蚀环境的影响。

34. 发明授权

US06303501B1 Gas mixing apparatus and method 失效
标题翻译：气体混合装置及方法
公开(公告)号：US06303501B1
公开(公告)日：2001-10-16
申请号：US09550448
申请日：2000-04-17
申请人： Chen-An Chen , Koji Nakanishi , Aihua Chen
发明人： Chen-An Chen , Koji Nakanishi , Aihua Chen
IPC分类号： H01L2144
CPC分类号： C23C16/45512 , C23C16/08 , C23C16/455 , H01L21/28556 , H01L21/67017 , Y10T137/0329 , Y10T137/2499 , Y10T137/87692
摘要： The present invention provides apparatus, systems, and methods related to the manufacture of integrated circuits. Specifically, embodiments of the present invention include apparatus designed to provide thorough and reliable fluid mixture for gases used in a semiconductor processing system. In one embodiment of the invention, the gas mixing apparatus comprises a gas mixer housing having a gas inlet, a fluid flow channel, and a gas outlet. The fluid flow channel is fluidly coupled to a plurality of gas sources. The majority of the gas mixture occurs in the fluid flow channel which comprises one or more fluid separators for separating the gas into two or more gas portions and one or more fluid collectors for allowing the gas portions to collide with each other to mix the gas portions. This separation and collection of the gas portions results in a thoroughly mixed gas.
摘要翻译：本发明提供了与集成电路的制造相关的装置，系统和方法。具体地，本发明的实施例包括设计成为半导体处理系统中使用的气体提供彻底且可靠的流体混合物的装置。在本发明的一个实施例中，气体混合装置包括具有气体入口，流体流动通道和气体出口的气体混合器壳体。流体流动通道流体耦合到多个气体源。大部分气体混合物发生在流体流动通道中，流体流动通道包括一个或多个流体分离器，用于将气体分离成两个或更多个气体部分和一个或多个流体收集器，用于允许气体部分相互碰撞以混合气体部分。气体部分的分离和收集导致充分混合的气体。

35. 发明授权

US06267820B1 Clog resistant injection valve 有权
标题翻译：阻塞注射阀
公开(公告)号：US06267820B1
公开(公告)日：2001-07-31
申请号：US09248789
申请日：1999-02-12
申请人： Chen-An Chen , Won Bang
发明人： Chen-An Chen , Won Bang
IPC分类号： C23C1600
CPC分类号： C23C16/4485 , C23C16/4407 , Y10T137/0391 , Y10T137/87676
摘要： An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e., via the injection block, via a piezoelectric valve controller, etc.). The wave may be applied to the injection valve whenever vaporization takes place, in which case a removable trap is coupled between the injection valve and the processing chamber. Alternatively, the sonic wave may be applied to the injection valve only in conjunction with a chamber cleaning process.
摘要翻译：喷射阀具有振动以从其中排出残留物，从而避免喷射阀堵塞。优选地产生超声正弦波的波发生器可操作地耦合到喷射阀的蒸发区域（即，经由喷射块，经由压电阀控制器等）。每当发生气化时，波浪都可以施加到喷射阀，在这种情况下，可拆卸的捕集器连接在喷射阀和处理室之间。或者，声波可以仅与室清洁过程一起施加到喷射阀。

36. 发明授权

US06261374B1 Clog resistant gas delivery system 有权
标题翻译：堵塞气体输送系统
公开(公告)号：US06261374B1
公开(公告)日：2001-07-17
申请号：US09163282
申请日：1998-09-29
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： C23C1600
CPC分类号： H01J37/3244 , C23C16/4401 , C23C16/4485
摘要： The present invention recognizes that reactions between processing liquids is a major source of residue which clogs gas delivery systems. To avoid reactions between or among vaporized processing liquids, an inventive gas delivery system provides parallel delivery of vaporized processing liquids. The gas delivery system may be configured using any conventional vaporizing mechanism such as bubblers or injection valves. Preferably, liquid precursors TEPO, TEOS and TEB are vaporized in parallel within three injection valves, the vaporized processing liquids then are flowed into a common line and delivered to a chemical vapor deposition chamber for processing semiconductor wafers. In the unlikely event the line becomes clogged, the line can be easily replaced. Most preferably a single source of carrier gas controlled by a single mass flow controller supplies carrier gas to all three injection valves.
摘要翻译：本发明认识到处理液体之间的反应是堵塞气体输送系统的残留物的主要来源。为了避免蒸发的处理液体之间或之间的反应，本发明的气体输送系统提供蒸发的处理液体的平行输送。气体输送系统可以使用任何常规的蒸发机构（例如起泡器或喷射阀）来构造。优选地，液体前体TEPO，TEOS和TEB在三个喷射阀内平行蒸发，然后蒸发的处理液体流入公共管线并且被输送到用于处理半导体晶片的化学气相沉积室。在不太可能的情况下，线路堵塞，线路可以轻松更换。最优选地，由单个质量流量控制器控制的单一载气源将载气供应到所有三个喷射阀。

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