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31. 发明授权

US07253492B2 Semiconductor structure with via structure 有权
标题翻译：具有通孔结构的半导体结构
公开(公告)号：US07253492B2
公开(公告)日：2007-08-07
申请号：US11531507
申请日：2006-09-13
申请人： Gordon Ma , Carsten Ahrens
发明人： Gordon Ma , Carsten Ahrens
IPC分类号： H01L29/00
CPC分类号： H01L29/7835 , H01L21/76898 , H01L23/481 , H01L23/585 , H01L23/60 , H01L29/402 , H01L29/4175 , H01L29/41766 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device may comprise a semiconductor substrate having a top and a bottom surface, first and second insulating layer deposited on the top surface of the substrate, a runner arranged on top of the second insulator layer, a backside metal layer deposited on the bottom surface of the substrate, a first via structure extending from the bottom surface of the substrate to the top of the first insulating layer between the backside layer and the runner, and a second via extending from the top of the first insulating layer to the top of the second insulating layer between the first via and the runner.
摘要翻译：半导体器件可以包括具有顶表面和底表面的半导体衬底，沉积在衬底的顶表面上的第一和第二绝缘层，设置在第二绝缘体层的顶部上的流路，沉积在底表面上的背侧金属层所述第一通孔结构从所述衬底的底表面延伸到所述第一绝缘层的位于所述背面层和所述流道之间的顶部;以及第二通孔，其从所述第一绝缘层的顶部延伸到所述第一绝缘层的顶部，第一绝缘层和第二绝缘层。

32. 发明申请

US20070020863A1 LDMOS Transistor 有权
标题翻译： LDMOS晶体管
公开(公告)号：US20070020863A1
公开(公告)日：2007-01-25
申请号：US11531883
申请日：2006-09-14
申请人： Gordon Ma , Carsten Ahrens
发明人： Gordon Ma , Carsten Ahrens
IPC分类号： H01L21/336
CPC分类号： H01L29/41766 , H01L23/481 , H01L29/41725 , H01L29/4175 , H01L29/42372 , H01L29/456 , H01L29/66659 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a semiconductor substrate, an insulating layer on top of the substrate, a lateral field effect transistor comprising a drain region and a source region arranged in the substrate and a gate arranged above the substrate within the insulating layer, a drain runner arranged on top of the insulator layer above the drain region, a source runner arranged on top of the insulator layer above the source region, a gate runner arranged on top of the insulator layer outside an area defined by the drain runner and the source runner, a first coupling structure comprising a via for coupling the drain runner with the drain region, and a second coupling structure comprising a via for coupling the source runner with the source region.
摘要翻译：半导体器件包括半导体衬底，在衬底顶部的绝缘层，包括漏极区域和布置在衬底中的源极区域的横向场效应晶体管和布置在绝缘层内的衬底上方的栅极，排出流道布置位于漏极区域上方的绝缘体层的顶部，源极流路，其设置在源极区域上方的绝缘体层的顶部;栅极流道，布置在由漏极流道和源极流路限定的区域之外的绝缘体层顶部; 第一耦合结构包括用于将漏极流道与漏极区域耦合的通孔，以及包括用于将源极流体与源极区域耦合的通路的第二耦合结构。

33. 发明申请

US20050153546A1 Method for fabrication of a contact structure 有权
标题翻译：接触结构的制造方法
公开(公告)号：US20050153546A1
公开(公告)日：2005-07-14
申请号：US10755844
申请日：2004-01-12
申请人： Carsten Ahrens , Jakob Huber , Uwe Seidel
发明人： Carsten Ahrens , Jakob Huber , Uwe Seidel
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/48 , H01L23/498 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L21/76898 , H01L23/481 , H01L23/49827 , H01L2224/02372 , H01L2224/0401 , H01L2224/13009 , H01L2924/3011
摘要： A method for producing a contact structure on a structured surface comprising producing a first conductive layer on the structured surface, wherein the first conductive layer comprising tungsten. A conductive seed layer is produced on the first conductive layer, the contact structure being produced by electroplating on the seed layer. The first conductive layer serves as an etch stop for selectively removing substrate material from the backside.
摘要翻译：一种用于在结构化表面上制造接触结构的方法，包括在所述结构化表面上产生第一导电层，其中所述第一导电层包含钨。在第一导电层上产生导电种子层，接触结构通过在种子层上电镀来制造。第一导电层用作用于从背面选择性地去除衬底材料的蚀刻停止件。

34. 发明授权

US08993372B2 Method for producing a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US08993372B2
公开(公告)日：2015-03-31
申请号：US13407731
申请日：2012-02-28
申请人： Manfred Schneegans , Carsten Ahrens , Adolf Koller , Gerald Lackner , Anton Mauder , Hans-Joachim Schulze
发明人： Manfred Schneegans , Carsten Ahrens , Adolf Koller , Gerald Lackner , Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L21/00 , H01L21/36 , H01L21/02 , H01L21/762 , H01L29/861
CPC分类号： H01L21/02658 , H01L21/76202 , H01L21/76224 , H01L29/8611 , Y10T428/218
摘要： Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.
摘要翻译：公开了一种用于制造具有多晶半导体体区域的半导体部件的制造方法的实施例，其中在半导体部件部分中在半导体主体的第一和第二表面之间产生多晶半导体本体区域，其中具有波长至少1064nm的光束以聚焦到半导体主体的半导体部件部分中的位置的方式被引入半导体本体，并且其中该位置处的辐射的功率密度小于1×108W / cm 2。

35. 发明授权

US08470612B2 Integrated circuits with magnetic core inductors and methods of fabrications thereof 有权
公开(公告)号：US08470612B2
公开(公告)日：2013-06-25
申请号：US12900277
申请日：2010-10-07
申请人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
发明人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
IPC分类号： H01L27/22
CPC分类号： H01L28/10 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01L23/5227 , H01L25/16 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.

36. 发明申请

US20130065379A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130065379A1
公开(公告)日：2013-03-14
申请号：US13229861
申请日：2011-09-12
申请人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
发明人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
IPC分类号： H01L21/20
CPC分类号： H01L21/3223 , H01L21/02378 , H01L21/02381 , H01L21/02505 , H01L21/02513 , H01L21/02664 , H01L21/0475 , H01L21/26506 , H01L21/324 , H01L21/3247 , H01L29/1608
摘要： A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.
摘要翻译：一种制造半导体器件的方法包括形成半导体本体的多孔区域。半导体本体在多孔区域中包括多孔结构。在多孔区域上形成半导体层。在半导体层中形成半导体区域。然后，半导体层沿着多孔区域与半导体本体分离，包括通过热处理将氢引入多孔区域。

37. 发明申请

US20130049203A1 Semiconductor Device with Buried Electrode 有权
标题翻译：带埋地电极的半导体器件
公开(公告)号：US20130049203A1
公开(公告)日：2013-02-28
申请号：US13220284
申请日：2011-08-29
申请人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
发明人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
IPC分类号： H01L23/498 , H01L21/283
CPC分类号： H01L29/41 , H01L21/28 , H01L21/743 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.
摘要翻译：通过在半导体衬底内形成空腔来制造具有埋电极的半导体器件，在设置在半导体衬底上的外延层中形成有源器件区域，并在空腔中的有源器件区域下方形成埋置电极。掩埋电极由不同于半导体衬底的材料的导电材料形成。

38. 发明申请

US20120086102A1 Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof 有权
标题翻译：具有磁芯电感器的集成电路及其制造方法
公开(公告)号：US20120086102A1
公开(公告)日：2012-04-12
申请号：US12900277
申请日：2010-10-07
申请人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
发明人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
IPC分类号： H01L27/22 , H01L21/00
CPC分类号： H01L28/10 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01L23/5227 , H01L25/16 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.
摘要翻译：在一个实施例中，形成半导体器件的方法包括在衬底之内和/或之上形成第一电感线圈。第一电感线圈形成在衬底的顶侧附近。第一沟槽形成在与第一电感线圈相邻的衬底内。至少部分地用磁性填充材料填充第一沟槽。至少第一电感线圈下面的衬底的第一部分变薄。背面磁性层形成在基板的第一部分之下。背面磁性层和磁性填充材料形成第一电感线圈的磁芯区域的至少一部分。

39. 发明授权

US07888232B2 Method for producing a protective structure 有权
标题翻译：保护结构的制造方法
公开(公告)号：US07888232B2
公开(公告)日：2011-02-15
申请号：US12120401
申请日：2008-05-14
申请人： Andre Schmenn , Damian Sojka , Carsten Ahrens
发明人： Andre Schmenn , Damian Sojka , Carsten Ahrens
IPC分类号： H01L21/76
CPC分类号： H01L27/0255 , H01L21/22 , H01L21/265 , H01L29/66121 , H01L29/868
摘要： A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone.
摘要翻译：通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。在半导体衬底的表面上施加具有第二导电类型的掺杂的半导体层。在半导体层的第一区域中形成具有第二导电类型的掺杂的掩埋层，其中在半导体层和半导体衬底之间的接合处产生掩埋层。在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。在半导体层的第一区域和第二区域之间形成电绝缘。形成用于第一掺杂区和第二掺杂区的公共连接装置。

40. 发明申请

US20080029799A1 CAPACITOR DEVICE WITH A LAYER STRUCTURE DISPOSED IN A MEANDER-SHAPED 有权
标题翻译：电容式器件具有在形状上形成的层状结构
公开(公告)号：US20080029799A1
公开(公告)日：2008-02-07
申请号：US11833074
申请日：2007-08-02
申请人： Carsten Ahrens , Raimund Foerg , Klaus Koller , Kai-Olaf Subke
发明人： Carsten Ahrens , Raimund Foerg , Klaus Koller , Kai-Olaf Subke
IPC分类号： H01L27/108 , H01L21/70
CPC分类号： H01L29/945 , H01L27/0805 , H01L28/91
摘要： A capacitor device includes a substrate, a first conductive structure, a second conductive structure, a dielectric layer structure, and a recess in the substrate. The first and second conductive structures are disposed on opposite sides of the dielectric layer structure, and the dielectric layer structure extends in a meander-shaped manner in a cross-section through the recess.
摘要翻译：电容器器件包括衬底，第一导电结构，第二导电结构，电介质层结构和衬底中的凹部。第一和第二导电结构设置在电介质层结构的相对侧上，并且电介质层结构以弯曲形状延伸通过凹槽的横截面。

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