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31. 发明申请

US20110266642A1 METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED 失效
标题翻译：生产磁性隧道结的方法和获得的磁性隧道结
公开(公告)号：US20110266642A1
公开(公告)日：2011-11-03
申请号：US13112050
申请日：2011-05-20
申请人： Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
发明人： Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
IPC分类号： H01L29/82 , H01L21/20
CPC分类号： H01F41/307 , B82Y25/00 , B82Y40/00 , C23C14/088 , C23C14/46 , G11C11/16 , H01F10/3254
摘要： According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
摘要翻译：根据这种用于制造磁性隧道结的方法，可以在两个纳米晶体或非晶磁性膜之间沉积能够用作隧道势垒的电介质材料的膜。构成隧道势垒的电介质材料由至少部分结晶的钙钛矿组成，所述材料通过离子束溅射沉积在真空室中。

32. 发明授权

US07957181B2 Magnetic tunnel junction magnetic memory 有权
标题翻译：磁隧道结磁记忆体
公开(公告)号：US07957181B2
公开(公告)日：2011-06-07
申请号：US12059869
申请日：2008-03-31
申请人： Jean-Pierre Nozieres , Ricardo Sousa , Bernard Dieny , Olivier Redon , Ioan Lucian Prejbeanu
发明人： Jean-Pierre Nozieres , Ricardo Sousa , Bernard Dieny , Olivier Redon , Ioan Lucian Prejbeanu
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10 , Y10S977/933 , Y10S977/935
摘要： This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.
摘要翻译：这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

33. 发明授权

US07944736B2 Magnetoresistive device 有权
标题翻译：磁阻器件
公开(公告)号：US07944736B2
公开(公告)日：2011-05-17
申请号：US11989380
申请日：2006-07-26
申请人： Bernard Dieny , Virgile Javerliac
发明人： Bernard Dieny , Virgile Javerliac
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.
摘要翻译：该装置包括以静磁相互作用相对于彼此放置的两个磁阻元件（10,20），使得通过这些元件（10,20）之间的磁通量通过所述元件的软铁磁层（26,27） 10，20）。写装置（15）与元件（10,20）相关联，以控制每个软层（26,27）的磁化。读导体线（11,12,13,14）与每个磁阻元件（10,20）相关联，以通过测量相应的磁阻来检测软层（26,27）的磁状态。元件（10,20）的软铁磁层（26,27）保持基本相对于彼此反平行取向，而所述元件（10,20）的硬铁磁层（24）基本上平行取向。

34. 发明申请

US20110007560A1 SPIN POLARISED MAGNETIC DEVICE 有权
标题翻译：旋转偏振磁装置
公开(公告)号：US20110007560A1
公开(公告)日：2011-01-13
申请号：US12787746
申请日：2010-05-26
申请人： Bernard Dieny , Cristian Papusoi , Ursula Ebels , Dimitri Houssameddine , Liliana Buda-Prejbeanu , Ricardo Sousa
发明人： Bernard Dieny , Cristian Papusoi , Ursula Ebels , Dimitri Houssameddine , Liliana Buda-Prejbeanu , Ricardo Sousa
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer.
摘要翻译：磁性装置包括具有固定磁化方向的磁性参考层，其位于层的平面中或垂直于层的平面，具有可变磁化方向的磁存储层，分离参考层的非磁性间隔区和存储层和具有垂直于参考层的磁化的磁性自旋偏振层，并且如果参考层的磁化被定向在参考层的平面中，并且位于参考层的平面内，则位于自旋极化层的平面之外，或者位于如果参考层的磁化指向垂直于参考层的平面的自旋极化层的平面。参考层和存储层之间的自旋传递系数高于自旋偏振层和存储层之间的自旋传递系数。

35. 发明申请

US20100284104A1 MAGNETIC RECORDING MEDIUM 失效
标题翻译：磁记录介质
公开(公告)号：US20100284104A1
公开(公告)日：2010-11-11
申请号：US12743671
申请日：2008-11-20
申请人： Bernard Dieny , Jérôme Moritz , Bernard Rodmacq
发明人： Bernard Dieny , Jérôme Moritz , Bernard Rodmacq
IPC分类号： G11B5/02 , G11B5/33
CPC分类号： G11B5/855 , B82Y10/00 , G11B5/66 , G11B5/743 , G11B5/82
摘要： The present invention relates to a magnetic recording medium (100). The invention finds a particularly interesting application in the field of data stored on hard disks. The medium (100) comprises an assembly of magnetic zones disposed on a substrate (102), each magnetic zone comprising at least one first (C′1) and one second (C′2) stacked magnetic layers separated from each other by a non-magnetic layer (NM′). In addition, said first magnetic layer (C′1) presents magnetization substantially oriented parallel to the plane of said substrate (102) and said second magnetic layer (C′2) presents magnetization substantially oriented perpendicular to the plane of said substrate (102).
摘要翻译：本发明涉及一种磁记录介质（100）。本发明在存储在硬盘上的数据领域中发现了一个特别有趣的应用。介质（100）包括设置在基板（102）上的磁区的组件，每个磁区包括至少一个第一（C'1）和一个第二（C'2）堆叠的磁性层， - 磁性层（NM'）。另外，所述第一磁性层（C'1）具有平行于所述衬底（102）的平面大致取向的磁化，并且所述第二磁性层（C'2）具有垂直于所述衬底（102）平面的大致取向的磁化，。

36. 发明授权

US07772659B2 Magnetic device having perpendicular magnetization and interaction compensating interlayer 有权
标题翻译：具有垂直磁化和相互作用补偿中间层的磁性装置
公开(公告)号：US07772659B2
公开(公告)日：2010-08-10
申请号：US11876045
申请日：2007-10-22
申请人： Bernard Rodmacq , Vincent Baltz , Alberto Bollero , Bernard Dieny
发明人： Bernard Rodmacq , Vincent Baltz , Alberto Bollero , Bernard Dieny
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： G11C11/16 , G11C11/1675 , G11C11/5607
摘要： The magnetic device comprises a least two layers made of a magnetic material that are separated by at least one interlayer made of a non-magnetic material. The layers made of a magnetic material each have magnetization oriented substantially perpendicular to the plane of the layers. The layer of non-magnetic material induces an antiferromagnetic coupling field between the layers made of a magnetic material, the direction and amplitude of this field attenuating the effects of the ferromagnetic coupling field of magnetostatic origin that occurs between the magnetic layers.
摘要翻译：磁性装置包括由磁性材料制成的至少两层，其由至少一层由非磁性材料制成的中间隔开。由磁性材料制成的层各自具有基本上垂直于层平面的磁化。非磁性材料层在由磁性材料制成的层之间引起反铁磁耦合场，该场的方向和振幅衰减了在磁层之间发生的静磁原点的铁磁耦合场的影响。

37. 发明授权

US07480175B2 Magnetic tunnel junction device and writing/reading for said device 有权
标题翻译：磁隧道连接装置和所述装置的写/读
公开(公告)号：US07480175B2
公开(公告)日：2009-01-20
申请号：US11780402
申请日：2007-07-19
申请人： Bernard Dieny , Ricardo Sousa , Dana Stanescu
发明人： Bernard Dieny , Ricardo Sousa , Dana Stanescu
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3254
摘要： The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (I1), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (I2) in the opposite direction.
摘要翻译：该装置依次包括第一电极（12），磁参考层（1），隧道势垒（3），磁存储层（4）和第二电极（13）。至少一个第一热障被布置在存储层（4）和第二电极（13）之间，并且由具有低于5W / m /℃的热导率的材料形成。第二热障可以通过层，布置在第一电极（12）和参考层（1）之间。该方法的写入阶段包括通过隧道结从存储层（4）到参考层（1）的电流（I1）的流动，而读取阶段包括电流（I2）的流动相反的方向。

38. 发明申请

US20090015972A1 LOW NOISE MAGNETIC FIELD SENSOR 有权
标题翻译：低噪声磁场传感器
公开(公告)号：US20090015972A1
公开(公告)日：2009-01-15
申请号：US12123059
申请日：2008-05-19
申请人： Bernard Dieny , Claire Baraduc , Sebastien Petit , Christophe Thirion
发明人： Bernard Dieny , Claire Baraduc , Sebastien Petit , Christophe Thirion
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/398 , H01L43/08 , H01L43/12
摘要： The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer (410) and a second free-magnetization magnetic layer (430), called sensitive layer, separated by first separating layer (420) for magnetic uncoupling. The sensor further comprises a second pinned-magnetization magnetic layer (450), separated from said sensitive layer by a second separating layer (440) for magnetic uncoupling, the first and second separating layers being located on either side of said sensitive layer, and the respective magnetizations of the first pinned-magnetization magnetic layer and of the sensitive layer, in the absence of an external field, being substantially orthogonal. The orientation of the magnetization of the second pinned layer is selected.
摘要翻译：磁阻传感器技术领域本发明涉及一种磁阻传感器，其包括由第一分离层（420）分离的用于磁解耦的称为敏感层的第一销钉磁化磁性层（410）和第二自由磁化磁性层（430）。所述传感器还包括第二销钉磁化磁性层（450），所述第二销钉磁化磁性层（450）通过第二分离层（440）与所述敏感层分离，用于磁性解耦，所述第一和第二分离层位于所述敏感层的任一侧，在没有外部场的情况下，第一销钉磁化磁性层和敏感层的各自的磁化基本正交。选择第二被钉扎层的磁化方向。

39. 发明授权

US07453672B2 Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material 失效
标题翻译：具有导电磁性材料的自旋阀磁阻器件在磁性材料的介电层或半导体层中交替地桥接
公开(公告)号：US07453672B2
公开(公告)日：2008-11-18
申请号：US10492493
申请日：2002-10-10
申请人： Bernard Dieny , Bernard Rodmacq , Franck Ernult
发明人： Bernard Dieny , Bernard Rodmacq , Franck Ernult
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11C11/161 , H01F10/3254 , H01F41/307 , H01L43/08 , Y10T29/49044
摘要： A magnetoresistive device with a spin valve formed from a stack of layers including at least two magnetic layers for which the relative orientation of their magnetization directions can vary under the influence of a magnetic field, and comprising means of circulating a current in the spin valve transverse to the plane of the layers. The spin valve comprises at least one discontinuous dielectric or semiconducting layer in the stack, with electrically conducting bridges passing through the thickness of the dielectric or semiconducting layer, these bridges being designed to locally concentrate the current that passes transversely through the stack. Application particularly suitable for magnetic read heads, and random access memories.
摘要翻译：一种具有自旋阀的磁阻器件，其由包括至少两个磁性层的一叠层组成，其磁化方向的相对取向可以在磁场的影响下变化，并且包括在旋转阀横向流动电流的装置到层的平面。自旋阀在堆叠中包括至少一个不连续的电介质或半导电层，导电桥通过电介质层或半导电层的厚度，这些桥被设计成局部集中横穿堆叠的电流。特别适用于磁读头和随机存取存储器。

40. 发明申请

US20080098167A1 MAGNETIC DEVICE HAVING PERPENDICULAR MAGNETIZATION AND INTERACTION COMPENSATING INTERLAYER 有权
标题翻译：具有普遍磁化和互动补偿中间层的磁性器件
公开(公告)号：US20080098167A1
公开(公告)日：2008-04-24
申请号：US11876045
申请日：2007-10-22
申请人： Bernard RODMACQ , Vincent Baltz , Alberto Bollero , Bernard Dieny
发明人： Bernard RODMACQ , Vincent Baltz , Alberto Bollero , Bernard Dieny
IPC分类号： G06F12/00
CPC分类号： G11C11/16 , G11C11/1675 , G11C11/5607
摘要： This magnetic device comprises a least two layers made of a magnetic material that are separated by at least one interlayer made of a non-magnetic material. Said layers made of a magnetic material each have magnetization oriented substantially perpendicular to the plane of said layers. Said layer of non-magnetic material is capable of inducing an antiferromagnetic coupling field between said layers made of a magnetic material, the direction and amplitude of this field making it possible to attenuate the effects of the ferromagnetic coupling field of magnetostatic origin that occurs between said magnetic layers.
摘要翻译：该磁性装置包括由磁性材料制成的至少两层，其由至少一层由非磁性材料制成的中间隔开。由磁性材料制成的所述层各自具有基本垂直于所述层平面的磁化。所述非磁性材料层能够在由磁性材料制成的所述层之间引起反铁磁耦合场，该场的方向和幅度使得可以衰减出现在所述第一和第二磁阻原子之间的静磁原点的铁磁耦合场的影响磁性层。

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