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31. 发明授权

US6022645A Double-sided photomask 失效
标题翻译：双面光掩模
公开(公告)号：US6022645A
公开(公告)日：2000-02-08
申请号：US145749
申请日：1998-09-02
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： H01L21/027 , G03F1/29 , G03F1/30 , G03F1/32 , G03F1/68 , G03F9/00
CPC分类号： G03F1/29 , G03F1/50
摘要： A double photomask includes two complementary pattern layers respectively formed on each surface of a transparent substrate. A full pattern is a combined pattern of these two complementary pattern layers. These two complementary pattern layers are formed separately on the different surfaces. The double-sided photomask also includes a shifter layer for a phase shifting mask.
摘要翻译：双光掩模包括分别形成在透明基板的每个表面上的两个互补图案层。完整图案是这两个互补图案层的组合图案。这两个互补图案层分别形成在不同的表面上。双面光掩模还包括用于相移掩模的移位层。

32. 发明授权

US06010807A Phase-shifting mask for photolithography in semiconductor fabrications 失效
标题翻译：用于半导体制造中的光刻的相移掩模
公开(公告)号：US06010807A
公开(公告)日：2000-01-04
申请号：US56453
申请日：1998-04-07
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： G03F1/29 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29
摘要： A phase-shifting mask (PSM) is provided for use in a photolithographic process in semiconductor fabrications. The phase-shifting mask includes a quartz plate and a plurality of mask pieces located at predefined locations over said quartz plate. Each of said mask pieces includes a semi-transparent masking layer formed on said quartz plate and a semi-transparent phase-shifting layer formed on the periphery of said semi-transparent masking layer. The phase-shifting mask has the benefits of facilitating auto generation of the mask patterns thereon through computer graphic means and increasing the resolution and contrast of the pattern definition in the photolithographic process.
摘要翻译：提供了一种用于半导体制造中的光刻工艺中的相移掩模（PSM）。相移掩模包括石英板和位于所述石英板上的预定位置处的多个掩模片。每个所述掩模片包括形成在所述石英板上的半透明掩模层和形成在所述半透明掩蔽层的周边上的半透明相移层。相移掩模具有促进通过计算机图形装置自动生成掩模图案的优点，并且增加了光刻工艺中图案定义的分辨率和对比度。

33. 发明授权

US06004702A Phase-shifting mask structure and method of fabricating the same 失效
标题翻译：相移掩模结构及其制造方法
公开(公告)号：US06004702A
公开(公告)日：1999-12-21
申请号：US83211
申请日：1998-05-21
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： G03F1/28 , G03F1/32 , G03F1/34 , G03F9/00
CPC分类号： G03F1/34 , G03F1/28 , G03F1/32
摘要： A phase-shifting mask (PSM) structure and a method for fabricating the same are provided. The PSM structure includes a quartz substrate and a shifter layer formed over said quartz substrate, each shifter layer being formed with a first thickness of specific value to serve as the blinding portion of the PSM and a second thickness of specific value to serve as the phase-shifting portion of the PSM. The shifter layer of two different thicknesses can be used to replace the conventional chromium layer to provide the desired blinding and phase shifting effects of the PSM.
摘要翻译：提供了相移掩模（PSM）结构及其制造方法。 PSM结构包括石英衬底和形成在所述石英衬底上的移位层，每个移位层形成具有特定值的第一厚度以用作PSM的盲目部分，并且第二厚度的特定值用作相位 PSM的转换部分。可以使用两种不同厚度的移位层代替传统的铬层，以提供PSM所需的盲目和相移效应。

34. 发明授权

US07807342B2 Transmission mask with differential attenuation to improve ISO-dense proximity 有权
标题翻译：具有差分衰减的传输掩模，以提高ISO密集接近度
公开(公告)号：US07807342B2
公开(公告)日：2010-10-05
申请号：US11303301
申请日：2005-12-16
申请人： Hang Yip Liu , Sebastian Schmidt , Benjamin Szu-Min Lin
发明人： Hang Yip Liu , Sebastian Schmidt , Benjamin Szu-Min Lin
IPC分类号： G03F7/20 , G03F1/08
CPC分类号： G03F1/36 , G03F1/50 , G03F7/70283
摘要： An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
摘要翻译：一种用于补偿光刻工艺中图案成像中的邻近效应的装置，系统和方法。通过具有对应于预定图案的透光开口的曝光掩模，以预定图案实现光致抗蚀剂层的曝光。曝光掩模具有由透光开口和由透光开口稀疏地填充的区域密集地区域。光通过密集居住的透光开口被衰减不同于通过疏散人口的透光开口的量。

35. 发明授权

US07268070B2 Profile improvement method for patterning 有权
标题翻译：轮廓改良方法
公开(公告)号：US07268070B2
公开(公告)日：2007-09-11
申请号：US10445047
申请日：2003-05-27
申请人： Hui-Ling Huang , Benjamin Szu-Min Lin , Cheng-Chung Chen , George Liu
发明人： Hui-Ling Huang , Benjamin Szu-Min Lin , Cheng-Chung Chen , George Liu
IPC分类号： H01L21/47 , H01L21/4757
CPC分类号： G03F7/40
摘要： There is a grain phenomenon issue of rough sidewall for patterning. Thus, imprecise grain profiles would be observed. As the critical dimensions of integrated circuit microelectronics fabrication device have decreased, the effect of grain phenomenon have become more pronounced. A profile improvement method with a thermal-compressive material and a thermal-compressive process is provided to solve the grain phenomenon issue for baseline of 0.09 um generation and beyond. With this material, the profile can be improved no matter in top view or lateral view. Furthermore, there are 0.1 um IDOF improvement and better physical etching performance.
摘要翻译：图案粗糙的侧壁存在颗粒现象问题。因此，将观察到不精确的颗粒轮廓。随着集成电路微电子制造装置的关键尺寸降低，晶粒现象的影响变得更加明显。提供了一种具有热压缩材料和热压缩工艺的轮廓改进方法，以解决0.09 um以上的基线的纹理现象问题。使用这种材料，无论在俯视图或侧视图中，轮廓都可以改进。此外，具有0.1um的IDOF改进和更好的物理蚀刻性能。

36. 发明申请

US20060194142A1 IMMERSION LITHOGRAPHY WITHOUT USING A TOPCOAT 审中-公开
标题翻译：没有使用TOPCOAT的倾斜图
公开(公告)号：US20060194142A1
公开(公告)日：2006-08-31
申请号：US10906582
申请日：2005-02-25
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： G03C1/76
CPC分类号： G03F7/70341 , G03F7/2041
摘要： A novel immersion medium for immersion lithography is provided. The immersion medium is introduced to fill a gap in between a front surface of a projection lens of a stepper and a top surface of a photoresist layer coated on a substrate positioned on a wafer stage. The present invention is characterized in that the immersion medium has a pH value matching that of the photoresist layer in order to prevent effects caused by photo acid generator (PAG) leaching from the photoresist layer to the immersion medium during exposure.
摘要翻译：提供了一种浸没式光刻浸渍介质。引入浸渍介质以填充步进器的投影透镜的前表面和涂覆在位于晶片台上的基板上的光致抗蚀剂层的顶表面之间的间隙。本发明的特征在于，浸渍介质的pH值与光致抗蚀剂层的pH值相匹配，以防止在曝光期间光致酸层从浸渍介质浸出的光酸产生剂（PAG）引起的影响。

37. 发明申请

US20060191863A1 Method for fabricating etch mask and patterning process using the same 审中-公开
标题翻译：用于制造蚀刻掩模的方法和使用其的图案化工艺
公开(公告)号：US20060191863A1
公开(公告)日：2006-08-31
申请号：US11067283
申请日：2005-02-25
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： C23F1/00
CPC分类号： H01L21/0337 , H01L21/0338
摘要： A method for fabricating a mask is provided. A patterned sacrificial layer is formed over a mask material layer, and the patterned sacrificial layer has an etch selectivity different from that of the mask material layer. An isotropic etch process is performed to the mask material layer by using the patterned sacrificial layer as an etch mask to form a mask layer, wherein the dimension of the mask layer is smaller than that of the patterned sacrificial layer.
摘要翻译：提供了一种制造掩模的方法。图案化的牺牲层形成在掩模材料层之上，并且图案化的牺牲层具有与掩模材料层的蚀刻选择性不同的蚀刻选择性。通过使用图案化的牺牲层作为蚀刻掩模来对掩模材料层进行各向同性蚀刻处理，以形成掩模层，其中掩模层的尺寸小于图案化牺牲层的尺寸。

38. 发明申请

US20050196951A1 METHOD OF FORMING DUAL DAMASCENE STRUCTURES 审中-公开
标题翻译：形成双重结构的方法
公开(公告)号：US20050196951A1
公开(公告)日：2005-09-08
申请号：US10708502
申请日：2004-03-08
申请人： Benjamin Szu-Min Lin , Shou-Wan Huang
发明人： Benjamin Szu-Min Lin , Shou-Wan Huang
IPC分类号： H01L21/311 , H01L21/4763 , H01L21/76
CPC分类号： H01L21/31144 , H01L21/76808 , H01L21/76844 , H01L21/76846
摘要： A method of forming at least one wire on a substrate comprising at least one conductive region is provided. AnAn insulatingayer is disposed on the substrate. The method includes forming a hard mask layer on the insulating layer followed by forming at least one recess by removing portions of the hard mask layer and the insulating layer, forming a light blocking layer on the hard mask layer and the recess, and the light blocking layer and the hard mask layer forming a composite layer, forming a gap filling layer filling up the recess on the light blocking layer, forming a photoresist layer on the gap filling layer, aligning a photo mask with the recess by utilizing the composite layer as a mask, and performing an exposure/development process to form at least one pattern above the recess in the photoresist layer.
摘要翻译：提供了一种在包括至少一个导电区域的基板上形成至少一根导线的方法。 AnAn绝缘层设置在基板上。该方法包括在绝缘层上形成硬掩模层，然后通过去除硬掩模层和绝缘层的部分形成至少一个凹部，在硬掩模层和凹部上形成遮光层，并且阻光层和硬掩模层形成复合层，形成填充光阻挡层上的凹部的间隙填充层，在间隙填充层上形成光致抗蚀剂层，通过利用复合层作为光掩模与凹槽对准光掩模掩模，并且进行曝光/显影处理以在光致抗蚀剂层中的凹部之上形成至少一个图案。

39. 发明申请

US20050074678A1 PHASE SHIFTING LITHOGRAPHIC PROCESS 有权
标题翻译：相移图像处理
公开(公告)号：US20050074678A1
公开(公告)日：2005-04-07
申请号：US10904795
申请日：2004-11-30
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： G03C5/00 , G03F1/30 , G03F9/00 , G06F17/50
CPC分类号： G03F1/30 , G03F1/70
摘要： A dual phase shifting mask (PSM)/double exposure lithographic process for manufacturing a shrunk semiconductor device. A semiconductor wafer having a photoresist layer coated thereon is provided. A first phase shift mask is disposed over the semiconductor wafer and implementing a first exposure process to expose the photoresist layer to light transmitted through the first phase shift mask so as to form a latent pattern comprising a peripheral unexposed line pattern in the photoresist layer. The first phase shift mask is then replaced with a second phase shift mask and implementing a second exposure process to expose the photoresist layer to light transmitted through the second phase shift mask so as to remove the peripheral unexposed line pattern.
摘要翻译：用于制造缩小半导体器件的双相移掩模（PSM）/双曝光光刻工艺。提供其上涂覆有光致抗蚀剂层的半导体晶片。第一相移掩模设置在半导体晶片上方，并且实施第一曝光工艺以将光致抗蚀剂层暴露于透过第一相移掩模的光，从而在光致抗蚀剂层中形成包括外围未曝光线图案的潜像。然后用第二相移掩模替换第一相移掩模，并实施第二曝光处理以将光致抗蚀剂层暴露于通过第二相移掩模传输的光，以便除去周围的未曝光线图案。

40. 发明授权

US06740473B1 Method for shrinking critical dimension of semiconductor devices 有权
标题翻译：缩小半导体器件临界尺寸的方法
公开(公告)号：US06740473B1
公开(公告)日：2004-05-25
申请号：US10065914
申请日：2002-11-28
申请人： Benjamin Szu-Min Lin , Hui-Ling Huang
发明人： Benjamin Szu-Min Lin , Hui-Ling Huang
IPC分类号： G03F700
CPC分类号： G03F7/40
摘要： A method for shrinking critical dimension of semiconductor devices includes forming a first pattern of a photoresist layer on a semiconductor device layer, by performing a blanket exposing process to expose the photoresist layer and the exposed semiconductor device layer to light having a wavelength that can be absorbed by the photoresist layer to provide the photoresist layer with a predetermined energy per unit area, thereby producing photo generated acids therein. A first thermal process is performed to diffuse the photo-generated acids formed within the photoresist layer and to equalize glass transition temperature (Tg) of the photoresist layer. A second thermal process is thereafter carried out. The first thermal process is carried out under a temperature lower than Tg of the photoresist layer.
摘要翻译：缩小半导体器件的临界尺寸的方法包括：在半导体器件层上形成光致抗蚀剂层的第一图案，通过进行橡皮布曝光工艺，将光致抗蚀剂层和暴露的半导体器件层暴露于具有可被吸收的波长的光通过光致抗蚀剂层提供每单位面积预定能量的光致抗蚀剂层，从而在其中产生光生酸。执行第一热处理以扩散在光致抗蚀剂层内形成的光生酸，并平衡光致抗蚀剂层的玻璃化转变温度（Tg）。此后进行第二热处理。第一热处理在低于光致抗蚀剂层的Tg的温度下进行。

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