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31. 发明申请

US20070037491A1 Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing 审中-公开
标题翻译：化学改性化学机械抛光垫，制造改性化学机械抛光垫的工艺和化学机械抛光方法
公开(公告)号：US20070037491A1
公开(公告)日：2007-02-15
申请号：US11202470
申请日：2005-08-12
申请人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
发明人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
IPC分类号： B24B7/30
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/24 , B24D3/346 , B24D13/12
摘要： A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.
摘要翻译：衬底表面的CMP的方法包括提供具有抛光层的抛光垫，抛光层可以基本上没有磨料颗粒，与抛光层化学键合（共价或离子）的官能团。官能团用作抛光浆料化合物的活化剂或催化剂，以在基本上相同的抛光剂存在下，显示更高的材料去除速率，以除去基材表面的选定部分，基本相同的基材CMP 浆料和抛光垫，其中基本相同的抛光层不具有官能团。官能团可以衍生自包含多胺，聚电解质和/或氨基酸的化合物。还公开了一种制造由此形成的CMP焊盘和CMP焊盘的方法。

32. 发明申请

US20050164606A1 Chemical mechanical planarization process control utilizing in-situ conditioning process 有权
标题翻译：化学机械平面化过程控制利用原位调节过程
公开(公告)号：US20050164606A1
公开(公告)日：2005-07-28
申请号：US11042999
申请日：2005-01-25
申请人： Stephen Benner , Yuzhuo Li
发明人： Stephen Benner , Yuzhuo Li
IPC分类号： B24B37/04 , B24B49/18 , B24B49/00
CPC分类号： B24B37/042 , B24B49/18
摘要： A system and method for providing process control in a CMP system utilizes a vacuum-assisted arrangement for conditioning a wafer polishing pad so that the effluent (i.e., wafer debris, polishing slurry, chemical or other by-products) from the conditioning process is diverted from the waste stream and instead introduced into an analysis module for further processing. The analysis module functions to determine at least one parameter within the effluent and generate a process control signal based upon the analysis. The process control signal is then fed back to the planarization process to allow for the control of various parameters such as polishing slurry composition, temperature, flow rate, etc. The process control signal can also be used to control the conditioning process and/or determining the endpoint of the planarization process itself.
摘要翻译：用于在CMP系统中提供过程控制的系统和方法利用真空辅助布置来调节晶片抛光垫，使得来自调节过程的流出物（即，晶片碎片，抛光浆料，化学品或其它副产物）被转移从废物流中引入分析模块进一步处理。分析模块用于确定流出物内的至少一个参数，并基于分析生成过程控制信号。然后将过程控制信号反馈到平坦化过程，以允许控制各种参数，例如抛光浆料组成，温度，流速等。过程控制信号还可用于控制调节过程和/或确定平坦化过程本身的终点。

33. 发明申请

US20050072742A1 Photo-chemical remediation of Cu-CMP waste 失效
标题翻译： Cu-CMP废物的光化学修复
公开(公告)号：US20050072742A1
公开(公告)日：2005-04-07
申请号：US10678415
申请日：2003-10-03
申请人： Yuzhuo Li , Jason Keleher , Ning Gao
发明人： Yuzhuo Li , Jason Keleher , Ning Gao
IPC分类号： C02F1/30 , C02F1/32 , C02F1/68 , C02F1/70 , C02F1/72
CPC分类号： C02F1/32 , C02F1/30 , C02F1/683 , C02F1/705 , C02F1/725 , C02F2103/16 , C02F2103/346 , C02F2305/10 , Y02W10/37 , Y10S210/912
摘要： A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.
摘要翻译： Cu-CMP废水的光化学修复基本上包括：将光催化剂颗粒添加到含有铜离子和有机污染物的废物流中，并将废物流暴露于紫外线或阳光下，使铜离子沉积在光催化剂颗粒。由此，从废物流中除去铜离子。同时，有机和无机污染物通过光催化剂的光解能力分解，使废物流在环境标准中排放到环境中。

34. 发明授权

US06656241B1 Silica-based slurry 失效
标题翻译：二氧化硅基浆料
公开(公告)号：US06656241B1
公开(公告)日：2003-12-02
申请号：US09882548
申请日：2001-06-14
申请人： Stuart D. Hellring , Colin P. McCann , Charles F. Kahle , Yuzhuo Li , Jason Keleher
发明人： Stuart D. Hellring , Colin P. McCann , Charles F. Kahle , Yuzhuo Li , Jason Keleher
IPC分类号： G09G102
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (“CMP”) of semiconductor and other microelectronic substrates.
摘要翻译：本发明涉及一种浆料组合物及其制备方法。特别地，本发明的浆料组合物包括二氧化硅，其中二氧化硅包括表面改性。本发明的二氧化硅基浆料适用于抛光制品，特别适用于半导体和其他微电子基板的化学机械平面化（“CMP”）。

35. 发明授权

US08684793B2 Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization 有权
标题翻译：氧化颗粒基浆料用于诺贝尔金属，包括钌化学机械平面化
公开(公告)号：US08684793B2
公开(公告)日：2014-04-01
申请号：US13266520
申请日：2010-05-06
申请人： Yuzhuo Li , Karpagavalli Ramji
发明人： Yuzhuo Li , Karpagavalli Ramji
IPC分类号： B24B1/00
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.
摘要翻译：提供了一种用于化学机械平面化钌的方法。包含钌的半导体衬底与包括氧化颗粒，研磨剂，抛光垫和液体载体的化学机械抛光系统接触。抛光组合物的pH为约8至12。观察到本发明浆料的高钌去除速率。所公开的氧化颗粒有利地在低抛光压力下提高钌的抛光速度，并减少在低k材料上产生的划痕。

36. 发明申请

US20130005149A1 CHEMICAL-MECHANICAL PLANARIZATION OF SUBSTRATES CONTAINING COPPER, RUTHENIUM, AND TANTALUM LAYERS 审中-公开
标题翻译：含有铜，钌和钽酸盐的基板的化学机械平面化
公开(公告)号：US20130005149A1
公开(公告)日：2013-01-03
申请号：US13580508
申请日：2011-01-19
申请人： Yuzhuo Li , Ke Wang
发明人： Yuzhuo Li , Ke Wang
IPC分类号： C09K13/00 , C09K13/02 , H01L21/306 , C09K13/04
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.
摘要翻译：一种化学机械抛光组合物，其包含：（a）至少一种类型的磨料颗粒; （b）至少两种氧化剂; （c）至少一种pH调节剂; 和（d）去离子水; （e）任选地包含至少一种抗氧化剂，以及用于对含有至少一个铜层，至少一个钌层和至少一个钽层进行化学机械平坦化的方法，包括以下步骤：（1）提供所述化学机械抛光组合物; （2）使待研磨的基材表面与化学机械抛光组合物和抛光垫接触; 和（3）通过相对于衬底移动抛光垫来化学和机械地抛光衬底表面。

37. 发明申请

US20120231627A1 PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 有权
标题翻译：从基板上移除大块材料层的方法和适用于本工艺的化学机械抛光剂
公开(公告)号：US20120231627A1
公开(公告)日：2012-09-13
申请号：US13510514
申请日：2010-11-25
申请人： Vijay Immanuel Raman , Yuzhuo Li , Mario Brands , Yongqing Lan , Kenneth Rushing , Karpagavalli Ramji
发明人： Vijay Immanuel Raman , Yuzhuo Li , Mario Brands , Yongqing Lan , Kenneth Rushing , Karpagavalli Ramji
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.
摘要翻译：一种包含固体颗粒（a1）的水性化学机械抛光（CMP）剂（A），其包含（a11）金属缓蚀剂和（a12）固体材料，所述固体颗粒（a1）细分散在水相中 ; 并且其用于从基材表面除去大体材料层并通过化学机械抛光使暴露表面平坦化的工艺，直到所有材料残余物从暴露表面除去，其中CMP试剂在化学机械抛光，而不添加补充材料， - 与其开始时相同或基本相同的静态蚀刻速率（SER）和比起始时更低的材料去除速率（MRR），比起始时低SER，与其开始时相同或基本相同的MRR或比起始时更低的SER和较低的MRR; 使得CMP试剂表现出软着色行为。

38. 发明申请

US20120077419A1 RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CEO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) 审中-公开
标题翻译：用于化学机械平面化（CE）的CEO2纳米颗粒的RASPBERRY型金属氧化物纳米结构
公开(公告)号：US20120077419A1
公开(公告)日：2012-03-29
申请号：US13376270
申请日：2010-05-27
申请人： Zhihua Zhang , Vaibhav Dalvi , Bir Darbar Mehta , Andreas Fechtenkoetter , Yuzhuo Li , Michael Lauter
发明人： Zhihua Zhang , Vaibhav Dalvi , Bir Darbar Mehta , Andreas Fechtenkoetter , Yuzhuo Li , Michael Lauter
IPC分类号： C09K3/14 , B24B1/00 , C09K13/00 , C09G1/02 , B82Y40/00 , B82Y30/00
CPC分类号： C09G1/02 , C01B33/18 , C01F17/0043 , C01P2004/03 , C01P2004/32 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C09C3/063 , C09K3/1436 , C09K3/1445 , C09K3/1463 , C23C16/02 , H01L21/30625 , H01L21/31053
摘要： Raspberry-type coated particles comprising a core selected from the group consisting of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof with a core size of from 20 to 100 nm wherein the core is coated with CeCO2 particles having a particle size below 10 nm; process for preparing raspberry type coated particles comprising the steps of i) providing a mixture containing: a) core particles selected from the group of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof, with a particle size of from 20 to 100 nm; b) a water soluble Ce-salt and c) water; ii) adding an organic or inorganic base to the mixture of step i) at temperatures of from 10 to 90° C. and iii) aging the mixture at temperatures of from 10 to 90° C.; and polishing agents containing the particles and their use for polishing surfaces.
摘要翻译：包含选自Si，Ti，Zr，Al，Zn的金属氧化物和核心尺寸为20至100nm的其混合物的芯的覆盆子型涂覆颗粒，其中芯体涂覆有具有颗粒的CeCO 2颗粒尺寸低于10nm; 包括以下步骤的制备覆盆子型涂覆颗粒的方法：i）提供混合物，其包含：a）选自Si，Ti，Zr，Al，Zn的金属氧化物的核颗粒及其混合物，其粒度为20 至100nm; b）水溶性Ce-盐和c）水; ii）在10至90℃的温度下向步骤i）的混合物中加入有机或无机碱，和iii）在10至90℃的温度下使混合物老化; 和含有颗粒的抛光剂及其用于抛光表面的用途。

39. 发明申请

US20120058643A1 AQUEOUS METAL POLISHING AGENT COMPRISING A POLYMERIC ABRASIV CONTAINING PENDANT FUNCTIONAL GROUPS AND ITS USE IN A CMP PROCESS 有权
标题翻译：含有包含功能性组合物的聚合物和在CMP工艺中使用的金属抛光剂
公开(公告)号：US20120058643A1
公开(公告)日：2012-03-08
申请号：US13318911
申请日：2010-04-19
申请人： Vijay Immanuel Raman , Ilshat Gubaydullin , Yuzhuo Li , Mario Brands , Yongqing Lan
发明人： Vijay Immanuel Raman , Ilshat Gubaydullin , Yuzhuo Li , Mario Brands , Yongqing Lan
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.
摘要翻译：（A）固体聚合物颗粒细分散在水相中并含有能够与待抛光表面的金属强烈相互作用并形成强复合物的侧基官能团（a1），以及能够相互作用较少的侧链官能团（a2）与待处理表面的金属强度相比，官能团（a1）; 和（B）溶解在水相中的有机非聚合化合物，并且能够与要抛光的表面的金属相互作用并形成强的水溶性络合物，并引起材料去除速率MRR和静态蚀刻的增加随着化合物（B）浓度的增加而要抛光的金属表面的速率SER; CMP工艺，包括选择（A）和（B）以及使用CMP剂和用IC抛光晶片的工艺。

40. 发明申请

US20100178768A1 CONTROLLING PASSIVATING FILM PROPERTIES USING COLLOIDAL PARTICLES, POLYELECTROLYTES, AND IONIC ADDITIVES FOR COPPER CHEMICAL MECHANICAL PLANARIZATION 审中-公开
标题翻译：使用胶体颗粒，聚电解质和离子添加剂控制钝化膜的性能用于铜化学机械平面化
公开(公告)号：US20100178768A1
公开(公告)日：2010-07-15
申请号：US12601286
申请日：2008-06-13
申请人： Yuzhuo Li
发明人： Yuzhuo Li
IPC分类号： H01L21/461 , C09K13/00
CPC分类号： C01G3/00 , C09C1/66 , C09K3/1409 , C09K3/1463 , C23F3/06
摘要： The present invention provides for a copper CMP slurry composition which comprises a complexing agent, an oxidizer, an abrasive and a passivating agent. The present invention also provides for a method of chemical mechanical planarization of a copper conductive structure which comprises administering the copper CMP slurry composition during the planarization process.
摘要翻译：本发明提供一种铜CMP浆料组合物，其包含络合剂，氧化剂，研磨剂和钝化剂。本发明还提供一种铜导电结构的化学机械平面化方法，其包括在平坦化工艺期间施用铜CMP浆料组合物。

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