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31. 发明申请

US20070199658A1 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US20070199658A1
公开(公告)日：2007-08-30
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： B08B6/00 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：概括地说，本发明通过提供改进的室清洁机构来满足这些需要。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

32. 发明授权

US08911590B2 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：广义而言，本发明的实施例提供了一种改进的室清洁机构。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

33. 发明授权

US08898889B2 Chuck assembly for plasma processing 有权
标题翻译：用于等离子体处理的卡盘组件
公开(公告)号：US08898889B2
公开(公告)日：2014-12-02
申请号：US13419369
申请日：2012-03-13
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B23P19/00 , H01J37/32 , H01L21/683
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译：提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。根据一个实施例，提供了一种用于等离子体处理的卡盘组件。卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

34. 发明申请

US20130240482A1 METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM 有权
标题翻译：在等离子体处理系统中选择性地修改射频电流的方法和装置
公开(公告)号：US20130240482A1
公开(公告)日：2013-09-19
申请号：US13423281
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： C23F1/08 , G01N33/00
CPC分类号： H01J37/32935 , C23C16/4585 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32697 , H01J37/32715 , H01J37/3299 , H01J2237/327 , H01J2237/3343
摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.
摘要翻译：公开了用于修改RF电流路径长度的方法和装置。装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。

35. 发明授权

US08485128B2 Movable ground ring for a plasma processing chamber 有权
标题翻译：用于等离子体处理室的可动接地环
公开(公告)号：US08485128B2
公开(公告)日：2013-07-16
申请号：US12828120
申请日：2010-06-30
申请人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： H01L21/3065 , C23F1/08 , C23C14/34 , C23C16/00
CPC分类号： H01L21/6719 , H01J37/32 , H01J37/32091 , H01J37/32568 , H01J37/32642 , H01L21/68735 , H01L21/68785
摘要： A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasma processing chamber wherein a semiconductor substrate supported in the substrate support assembly undergoes plasma processing.
摘要翻译：描述了可动基板支撑组件的可动接地环。可移动接地环被配置为围绕并提供到可移动衬底支撑组件的固定接地环的RF返回路径，其中可调节间隙电容耦合等离子体处理室，其中支撑在衬底支撑组件中的半导体衬底经历等离子体处理。

36. 发明授权

US08262847B2 Plasma-enhanced substrate processing method and apparatus 有权
标题翻译：等离子体增强的基板处理方法和装置
公开(公告)号：US08262847B2
公开(公告)日：2012-09-11
申请号：US11618583
申请日：2006-12-29
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

37. 发明申请

US20110070743A1 APPARATUS AND METHODS FOR EDGE RING IMPLEMENTATION FOR SUBSTRATE PROCESSING 有权
标题翻译：用于基板加工的边缘实施的装置和方法
公开(公告)号：US20110070743A1
公开(公告)日：2011-03-24
申请号：US12951886
申请日：2010-11-22
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01L21/3065
CPC分类号： H01L21/6732 , H01J37/32091 , H01J37/32623 , H01J37/32642 , Y10S156/915
摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring.
摘要翻译：提供了一种在等离子体处理室中处理衬底的方法。衬底设置在卡盘上方并被第一边缘环包围。第一边缘环与卡盘电隔离。该方法包括提供第二边缘环。第二边缘环设置在基板的边缘下方。该方法还包括提供耦合环。联接环被配置为便于从ESC（静电卡盘）组件到第一边缘环的RF耦合，从而使得第一边缘环在衬底处理期间具有边缘环电位，并且使RF耦合在第一边缘处被最大化在基板处理期间在第二边缘环处环形并最小化。该方法还包括提供绝缘体环，其中第二边缘环设置在绝缘体环上方。

38. 发明申请

US20170213734A9 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
公开(公告)号：US20170213734A9
公开(公告)日：2017-07-27
申请号：US12533984
申请日：2009-07-31
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Akira Koshiishi , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Akira Koshiishi , Andreas Fischer
IPC分类号： H01L21/306 , C23C16/513
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

39. 发明授权

US09184074B2 Apparatus and methods for edge ring implementation for substrate processing 有权
标题翻译：用于基板处理的边缘环实现的装置和方法
公开(公告)号：US09184074B2
公开(公告)日：2015-11-10
申请号：US12951886
申请日：2010-11-22
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： C03C15/00 , H01L21/3065 , H01L21/673 , H01J37/32
CPC分类号： H01L21/6732 , H01J37/32091 , H01J37/32623 , H01J37/32642 , Y10S156/915
摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring.
摘要翻译：提供了一种在等离子体处理室中处理衬底的方法。衬底设置在卡盘上方并被第一边缘环包围。第一边缘环与卡盘电隔离。该方法包括提供第二边缘环。第二边缘环设置在基板的边缘下方。该方法还包括提供耦合环。联接环被配置为便于从ESC（静电卡盘）组件到第一边缘环的RF耦合，从而使得第一边缘环在衬底处理期间具有边缘环电位，并且使RF耦合在第一边缘处被最大化在基板处理期间在第二边缘环处环形并最小化。该方法还包括提供绝缘体环，其中第二边缘环设置在绝缘体环上方。

40. 发明授权

US08894804B2 Plasma unconfinement sensor and methods thereof 有权
标题翻译：等离子体无约束传感器及其方法
公开(公告)号：US08894804B2
公开(公告)日：2014-11-25
申请号：US12747491
申请日：2008-12-12
申请人： Jean-Paul Booth , Alexei Marakhtanov , Rajinder Dhindsa , Luc Albarede , Seyed Jafar Jafarian-Tehrani
发明人： Jean-Paul Booth , Alexei Marakhtanov , Rajinder Dhindsa , Luc Albarede , Seyed Jafar Jafarian-Tehrani
IPC分类号： C23F1/00 , H01J37/32
CPC分类号： H01J37/32935
摘要： An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.
摘要翻译：提供了用于检测等离子体无约束事件的等离子体反应器内的布置。该装置包括传感器，其是在等离子体反应器内实现的基于电容的传感器。传感器在等离子体限制区域外部实现，并且被配置为当传感器暴露于与等离子体无约束事件相关联的等离子体时产生瞬态电流。传感器具有至少一个朝向与等离子体无约束事件相关联的等离子体的电绝缘层。该装置还包括检测电路，其与传感器电连接，用于将瞬态电流转换成瞬态电压信号，并用于处理瞬态电压信号以确定是否存在等离子体无约束事件。

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