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31. 发明授权

US07786459B2 Memory element and memory device comprising memory layer positioned between first and second electrodes 有权
标题翻译：存储元件和存储器件包括位于第一和第二电极之间的存储器层
公开(公告)号：US07786459B2
公开(公告)日：2010-08-31
申请号：US11280561
申请日：2005-11-15
申请人： Katsuhisa Aratani , Tomohito Tsushima , Akira Kouchiyama , Tetsuya Mizuguchi
发明人： Katsuhisa Aratani , Tomohito Tsushima , Akira Kouchiyama , Tetsuya Mizuguchi
IPC分类号： H01L29/02
CPC分类号： G11C13/0011 , G11C2213/11 , G11C2213/15 , G11C2213/34 , G11C2213/56 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： A memory element 10 includes a memory layer 4 positioned between a first electrode 2 and a second electrode 6, in which an element selected from Cu, Ag, and Zn is contained in the memory layer 4 or in a layer 3 in contact with the memory layer 4, a resistance of the memory element 10 is changed by a voltage applied to the memory element 10 to perform recording of information, and in an erasing process of changing from a recorded state of low resistance value of the memory element 10 to an erased state of high resistance value of the memory element 10, a fluctuation, which is caused by an increase of the voltage applied to the memory element 10, of the resistance value of the memory element 10 at the end of the erasing process is within ten times at a maximum.
摘要翻译：存储元件10包括位于第一电极2和第二电极6之间的存储层4，其中选自Cu，Ag和Zn的元素包含在存储层4中或与存储器接触的层3中层4，存储元件10的电阻被施加到存储元件10的电压改变以进行信息的记录，并且在从存储元件10的低电阻值的记录状态改变为擦除的擦除处理存储元件10的高电阻值的状态，由擦除处理结束时的存储元件10的电阻值的升高引起的由存储元件10施加的电压引起的波动为十倍以内最大。

32. 发明申请

US20100112491A1 METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC 失效
标题翻译：用于制造光盘的方法和用于制造光盘的方法
公开(公告)号：US20100112491A1
公开(公告)日：2010-05-06
申请号：US12635314
申请日：2009-12-10
申请人： Akira Kouchiyama , Katsuhisa Aratani
发明人： Akira Kouchiyama , Katsuhisa Aratani
IPC分类号： G03F7/20
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern using a light source with an irradiation power that is less than an irradiation threshold power at which exposure of the resist starts; and developing the resist layer to form the predetermined irregular pattern.
摘要翻译：一种使用现有曝光系统制造光盘母盘的方法，以及一种制造具有较高记录容量的光盘的方法。制造光盘的方法，使用母盘来制造其上具有不规则图案的光盘，通过以下步骤制造母版：通过形成由包括过渡金属的不完全氧化物如W的抗蚀剂材料构成的抗蚀剂层或Mo，不完全氧化物的氧含量小于对应于过渡金属的化合价的化学计量组成的氧含量; 使用具有小于抗蚀剂开始曝光的照射阈值功率的照射功率的光源根据记录信号图案选择性地曝光抗蚀剂层; 并显影抗蚀剂层以形成预定的不规则图案。

33. 发明授权

US07675053B2 Memory device comprising a memory layer and a metal chalcogenide ion-source layer 有权
标题翻译：存储器件包括存储层和金属硫族化物离子源层
公开(公告)号：US07675053B2
公开(公告)日：2010-03-09
申请号：US11328049
申请日：2006-01-09
申请人： Tetsuya Mizuguchi , Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama
发明人： Tetsuya Mizuguchi , Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/101 , H01L27/115 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory element in which data recording and data readout can be performed stably without difficulties and which can be manufactured with a comparatively simplified method is provided.The memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and the second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and the ion source layer further contains boron (or rare-earth elements and silicon).
摘要翻译：提供了可以稳定地进行数据记录和数据读出的存储元件，其难点并且可以以比较简化的方法制造。存储元件10包括存储层4和位于第一电极2和第二电极6之间的离子源层3，其中离子源层3包含选自Cu，Ag，Zn中的任何元素和选择的任何元素来自Te，S，Se，离子源层还含有硼（或稀土元素和硅）。

34. 发明授权

US07145791B2 Memory device having variable resistive memory element 有权
标题翻译：具有可变电阻存储元件的存储器件
公开(公告)号：US07145791B2
公开(公告)日：2006-12-05
申请号：US11042959
申请日：2005-01-25
申请人： Tomohito Tsushima , Katsuhisa Aratani , Akira Kouchiyama
发明人： Tomohito Tsushima , Katsuhisa Aratani , Akira Kouchiyama
IPC分类号： G11C11/00
CPC分类号： G11C13/0009 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C2013/009 , G11C2213/11 , G11C2213/15 , G11C2213/34 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memory device is obtained in which stable recording of information can be performed and a period of time required for the recording of information can be shortened. The memory device includes a memory cell C formed of a memory element Amn having a characteristic in which a resistance value changes when applying between both ends of the memory element Amn a voltage equal to or more than a threshold voltage and a circuit element Tmn as a load connected in series to the memory element Amn; and when an operation to change the memory element Amn from a state of high resistance value to a state of low resistance value is defined as writing and when a voltage applied between both ends of the memory element Amn and the circuit element Tmn is equal to or more than a certain voltage value which is larger than the threshold voltage, the memory device has a characteristic in which a combined resistance value of the memory element Amn and the circuit element Tmn in the memory cell C after writing becomes almost constant value irrespective of the magnitude of applied voltage.
摘要翻译：获得可以执行信息的稳定记录并且可以缩短记录信息所需的时间段的存储器件。存储器件包括由存储元件Amn形成的存储单元C，该存储单元Amn具有当存储元件Amn的两端施加等于或大于阈值电压的电压和电路元件Tmn之间电阻值变化的特性时负载串联连接到存储元件Amn; 并且当将存储元件Amn从高电阻值状态改变为低电阻值的状态的操作被定义为写入时，并且当存储元件Amn和电路元件Tmn的两端之间施加的电压等于或等于大于阈值电压的一定电压值，存储器件具有这样的特性，其中存储元件Amn和写入后存储单元C中的电路元件Tmn的组合电阻值几乎是恒定值，而与施加电压的大小。

35. 发明申请

US20050226036A1 Memory device and storage apparatus 有权
标题翻译：存储设备和存储设备
公开(公告)号：US20050226036A1
公开(公告)日：2005-10-13
申请号：US10991075
申请日：2004-11-17
申请人： Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama , Tomohito Tsushima
发明人： Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： H01L27/105 , G11C11/00 , G11C13/02 , H01L21/105 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
摘要翻译：记忆装置10具有这样的结构，其中存储薄膜4夹在第一和第二电极2和6之间，记忆薄膜6至少含有稀土元素，存储薄膜4或与记忆薄膜4包含选自Cu，Ag，Zn和记忆薄膜4中的任一种元素，或者与存储薄膜4接触的层3包含选自Te，S，Se中的任何一种元素。存储装置可以容易地稳定地记录和读取信息，并且可以通过相对简单的制造方法容易地制造该存储装置。

36. 发明申请

US20050097257A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050097257A1
公开(公告)日：2005-05-05
申请号：US10851897
申请日：2004-05-21
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
IPC分类号： G11C13/00 , G11C7/00 , G11C11/409 , G11C13/02 , G11C16/02 , H01L27/10 , G06F12/00
CPC分类号： G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C16/3459 , G11C2013/009
摘要： A storage device comprises a memory element and an applying means for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying means, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other. Thus, the storage device according to the present invention can satisfactorily carry out recording operations even when information is recorded continuously.
摘要翻译：存储装置包括存储元件和用于向存储元件施加电压的施加装置，其中存储元件改变其特性以便通过施加装置向存储元件施加电压来记录信息，存储元件进一步改变其当相同的信息被连续记录在存储元件上时的特性。存储元件具有记录方法，其包括以下步骤：当记录信息时已经记录在存储元件上的信息的内容，将已经记录在存储元件上的信息与要记录在存储元件上的信息进行比较存储元件，如果两个信息彼此不同，则向存储元件施加电压以进行普通信息记录处理，并且当两个信息彼此相同时禁用普通信息记录处理。因此，即使当连续记录信息时，根据本发明的存储装置也能令人满意地执行记录操作。

37. 发明授权

US06631099B1 MAGNETIC FIELD MODULATION MAGNETIC HEAD, MAGNETO-OPTICAL ELEMENT, OPTICAL PICKUP DEVICE, AND OPTICAL DISK DRIVE, IN WHICH FIRST AND SECOND MAGNETIC CORES ARE PLACED ON OPPOSITE SIDES OF MAGNETIC FIELD GENERATION COIL TO ACHIEVE LOW POWER CONSUMPTION AND HIGH EFFICIENCY 失效
标题翻译：磁场调制磁头，磁光元件，光学拾取器件和光盘驱动器，其中第一和第二磁性磁体位于磁场生成线圈的相对面上，以实现低功耗和高效率
公开(公告)号：US06631099B1
公开(公告)日：2003-10-07
申请号：US09607178
申请日：2000-06-29
申请人： Akira Kouchiyama
发明人： Akira Kouchiyama
IPC分类号： G11B2100
CPC分类号： G11B11/10554 , G11B11/10534 , G11B11/10543 , G11B11/1058
摘要： A magnetic field modulation use magnetic head capable of applying a magnetic field to a recording layer of an optical disk with a low power consumption and a high efficiency and capable of preventing a disconnection of a magnetic field generation coil due to heat generation, provided with a magnetic field generation coil arranged so that it is substantially parallel to a magneto-optic recording layer of a magneto-optic recording medium, a first magnetic core formed at a side of the magnetic field generation coil 48 opposite to a magneto-optic recording medium, and a second magnetic core formed at a side of the magnetic field generation coil 48 the same as the magneto-optic recording medium, and a magneto-optical element, an optical pickup device, and an optical disk drive using the same.
摘要翻译：一种磁场调制用磁头，其能够以低功耗和高效率向光盘的记录层施加磁场，并且能够防止由于发热引起的磁场产生线圈的断开，磁场产生线圈被布置成使得其基本上平行于磁光记录介质的磁光记录层，形成在与磁光记录介质相对的磁场产生线圈48的一侧的第一磁芯，以及形成在与磁光记录介质相同的磁场产生线圈48的一侧的第二磁芯，以及使用其的磁光元件，光学拾取装置和光盘驱动器。

38. 发明授权

US5978320A Recording/reproducing apparatus for use with a photomagnetic recording medium 失效
标题翻译：用于光磁记录介质的记录/再现装置
公开(公告)号：US5978320A
公开(公告)日：1999-11-02
申请号：US76648
申请日：1998-05-12
申请人： Ariyoshi Nakaoki , Katsuhisa Aratani , Akira Kouchiyama
发明人： Ariyoshi Nakaoki , Katsuhisa Aratani , Akira Kouchiyama
IPC分类号： G11B11/105 , G11B11/00
CPC分类号： B82Y10/00 , G11B11/10534 , G11B11/10554 , G11B11/10543
摘要： A recording/reproducing apparatus for use with a photomagnetic recording medium. The apparatus comprises a magnetic coil and an optical system having a numerical aperture (NA) greater than 0.8 and arranged such that an optical axis thereof traverses the center of the magnetic coil. The photomagnetic recording medium has a magneto-optic recording film and a transparent protective layer having a thickness HCO formed sequentially on a substrate. The magnetic coil and the optical system are arranged on the transparent protective layer side of the photomagnetic recording medium when the photomagnetic recording medium is used with the apparatus and such that a combined distance equal to the thickness HCO and a distance d between a surface of the magnetic coil and an adjacent surface of the photomagnetic recording medium has a value of 0 .mu.m.ltoreq.d.ltoreq.145 .mu.m. The thickness HCO of the transparent protective layer may have a values of 0 .mu.m.ltoreq.HCO.ltoreq.100 .mu.m, and the distance d may have a value not larger than 45 .mu.m. Additionally, an innermost radius Ri of the magnetic coil may have a value of 290 .mu.m or less.
摘要翻译：一种与光磁记录介质一起使用的记录/再现装置。该装置包括磁性线圈和具有大于0.8的数值孔径（NA）的光学系统，并被布置为使得其光轴穿过磁性线圈的中心。光磁记录介质具有磁光记录膜和在基板上依次形成厚度HCO的透明保护层。当光磁记录介质与设备一起使用时，磁性线圈和光学系统被布置在光磁记录介质的透明保护层侧上，并且使得等于厚度HCO的组合距离和磁性线圈和光磁记录介质的相邻表面具有0μm的值=145μm。透明保护层的厚度HCO可以具有0μmHCO <100μm的值，并且距离d可以具有不大于45μm的值。此外，磁线圈的最内半径Ri可以具有290μm或更小的值。

39. 发明授权

US09564583B2 Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer 有权
标题翻译：存储器件包括非相变非晶态硫族化物存储层和金属硫族化物离子源层
公开(公告)号：US09564583B2
公开(公告)日：2017-02-07
申请号：US10514009
申请日：2004-03-18
申请人： Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
发明人： Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory element includes an amorphous thin-film that is between a first electrode and a second electrode in which at least one of the first electrode and the second electrode contains Ag or Cu. The amorphous thin film is a non-phase changing, amorphous material. A storage device includes a plurality of memory elements. Each memory element includes a wiring connected to a side of the first electrode and a wiring connected to a side of the second electrode.
摘要翻译：存储元件包括在第一电极和第二电极之间的非晶薄膜，其中第一电极和第二电极中的至少一个包含Ag或Cu。无定形薄膜是非相变非晶材料。存储装置包括多个存储元件。每个存储元件包括连接到第一电极侧的布线和连接到第二电极侧的布线。

40. 发明授权

US08427860B2 Memory component, memory device, and method of operating memory device 有权
标题翻译：存储器组件，存储器件和操作存储器件的方法
公开(公告)号：US08427860B2
公开(公告)日：2013-04-23
申请号：US13018744
申请日：2011-02-01
申请人： Kazuhiro Ohba , Shuichiro Yasuda , Tetsuya Mizuguchi , Katsuhisa Aratani , Masayuki Shimuta , Akira Kouchiyama , Mayumi Ogasawara
发明人： Kazuhiro Ohba , Shuichiro Yasuda , Tetsuya Mizuguchi , Katsuhisa Aratani , Masayuki Shimuta , Akira Kouchiyama , Mayumi Ogasawara
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , G11C11/16 , G11C11/161 , G11C13/0011 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/146 , H01L45/1633
摘要： A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
摘要翻译：存储器组件包括：第一电极; 记忆层; 和第二电极，其中所述存储层包括含有铝（Al）和至少一种选自碲（Te），硫（S）和硒的硫属元素的离子源层（Se），以及设置在所述离子源层与所述第一电极之间并且含有氧化铝和电阻低于所述氧化铝的过渡金属氧化物和过渡金属氧氮化物中的至少一种的电阻变化层。

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