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    • 35. 发明授权
    • Nitride semiconductor light emitting device chip
    • 氮化物半导体发光器件芯片
    • US06881981B2
    • 2005-04-19
    • US10250617
    • 2001-12-27
    • Yuhzoh TsudaShigetoshi Ito
    • Yuhzoh TsudaShigetoshi Ito
    • H01L33/00H01L33/14H01L33/32H01S5/323H01S5/343
    • H01L33/32B82Y20/00H01L33/0075H01L33/145H01S5/32341H01S5/34333
    • In a nitride semiconductor light emitting device chip, a mask pattern on a nitride semiconductor substrate (101) is formed of a growth inhibiting film on which a nitride semiconductor layer is hard to grow. There are a plurality of windows unprovided with the growth inhibiting film. There are at least two different widths as mask widths each between the adjacent windows. The mask pattern includes a mask A group (MAG) and mask B groups (MBG) arranged on respective sides of the mask A group. A mask A width in the mask A group is wider than a mask B width in the mask B group. The nitride semiconductor light emitting device chip further includes a nitride semiconductor underlayer (102) covering the windows and the mask pattern, and a light emitting device structure having a light emitting layer (106) including at least one quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the underlayer. A current-constricting portion (RS) through which substantial current is introduced into the light emitting layer is formed above mask A.
    • 在氮化物半导体发光器件芯片中,氮化物半导体衬底(101)上的掩模图案由氮化物半导体层难以生长的生长抑制膜形成。 没有提供生长抑制膜的多个窗口。 至少两个不同的宽度作为每个相邻窗口之间的掩模宽度。 掩模图案包括布置在掩模A组的相应侧上的掩模A组(MAG)和掩模B组(MBG)。 掩模掩模A组中的宽度比掩模B组中的掩码B宽度宽。 氮化物半导体发光器件芯片还包括覆盖窗口和掩模图案的氮化物半导体底层(102)和发光器件结构,其具有发光层(106),发光层(106)包括在n型层之间的至少一个量子阱层 (103-105)和ap型层(107-110)。 在掩模A上方形成有通过其将大量电流引入发光层的电流限制部分(RS)。