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31. 发明授权

US07579627B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07579627B2
公开(公告)日：2009-08-25
申请号：US11435932
申请日：2006-05-18
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L31/12
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

32. 发明授权

US07573924B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07573924B2
公开(公告)日：2009-08-11
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
IPC分类号： H01S5/00 , H01S3/04 , H01S3/08
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译：氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆，以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为最多100 ppm。

33. 发明授权

US07515621B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07515621B2
公开(公告)日：2009-04-07
申请号：US11702625
申请日：2007-02-06
申请人： Shigetoshi Ito , Yuhzoh Tsuda , Yoshihiro Ueta
发明人： Shigetoshi Ito , Yuhzoh Tsuda , Yoshihiro Ueta
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/2231 , H01S5/34333
摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.
摘要翻译：氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

34. 发明申请

US20050265413A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20050265413A1
公开(公告)日：2005-12-01
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
IPC分类号： H01L21/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/0683 , H01S5/323
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译：氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆，以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为最多100 ppm。

35. 发明授权

US06881981B2 Nitride semiconductor light emitting device chip 失效
标题翻译：氮化物半导体发光器件芯片
公开(公告)号：US06881981B2
公开(公告)日：2005-04-19
申请号：US10250617
申请日：2001-12-27
申请人： Yuhzoh Tsuda , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Shigetoshi Ito
IPC分类号： H01L33/00 , H01L33/14 , H01L33/32 , H01S5/323 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0075 , H01L33/145 , H01S5/32341 , H01S5/34333
摘要： In a nitride semiconductor light emitting device chip, a mask pattern on a nitride semiconductor substrate (101) is formed of a growth inhibiting film on which a nitride semiconductor layer is hard to grow. There are a plurality of windows unprovided with the growth inhibiting film. There are at least two different widths as mask widths each between the adjacent windows. The mask pattern includes a mask A group (MAG) and mask B groups (MBG) arranged on respective sides of the mask A group. A mask A width in the mask A group is wider than a mask B width in the mask B group. The nitride semiconductor light emitting device chip further includes a nitride semiconductor underlayer (102) covering the windows and the mask pattern, and a light emitting device structure having a light emitting layer (106) including at least one quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the underlayer. A current-constricting portion (RS) through which substantial current is introduced into the light emitting layer is formed above mask A.
摘要翻译：在氮化物半导体发光器件芯片中，氮化物半导体衬底（101）上的掩模图案由氮化物半导体层难以生长的生长抑制膜形成。没有提供生长抑制膜的多个窗口。至少两个不同的宽度作为每个相邻窗口之间的掩模宽度。掩模图案包括布置在掩模A组的相应侧上的掩模A组（MAG）和掩模B组（MBG）。掩模掩模A组中的宽度比掩模B组中的掩码B宽度宽。氮化物半导体发光器件芯片还包括覆盖窗口和掩模图案的氮化物半导体底层（102）和发光器件结构，其具有发光层（106），发光层（106）包括在n型层之间的至少一个量子阱层（103-105）和ap型层（107-110）。在掩模A上方形成有通过其将大量电流引入发光层的电流限制部分（RS）。

36. 发明授权

US06586777B1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US06586777B1
公开(公告)日：2003-07-01
申请号：US09641876
申请日：2000-08-18
申请人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
发明人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/325 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/32 , H01S5/0213 , H01S5/0218 , H01S5/305 , H01S5/34333 , H01S2304/00
摘要： The present nitride semiconductor light emitting device includes a nitride semiconductor thick film substrate and a light emitting layered structure including a plurality of nitride semiconductor layers stacked on the substrate. The nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration lower than the first layer region. The light emitting layered structure is formed on the first layer region of the substrate.
摘要翻译：本发明的氮化物半导体发光器件包括氮化物半导体厚膜衬底和包括堆叠在衬底上的多个氮化物半导体层的发光层状结构。氮化物半导体衬底包括至少两层包括高杂质浓度的第一层区域和杂质浓度低于第一层区域的第二层区域的层区域。发光层状结构形成在基板的第一层区域上。

37. 发明授权

US06399966B1 Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same 有权
公开(公告)号：US06399966B1
公开(公告)日：2002-06-04
申请号：US09947346
申请日：2001-09-07
申请人： Yuhzoh Tsuda , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Shigetoshi Ito
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , G11B7/127 , H01L33/325 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer.

38. 发明授权

US06335546B1 Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device 有权
标题翻译：氮化物半导体结构体，氮化物半导体结构体的制造方法以及发光装置
公开(公告)号：US06335546B1
公开(公告)日：2002-01-01
申请号：US09364768
申请日：1999-07-30
申请人： Yuhzoh Tsuda , Takayuki Yuasa
发明人： Yuhzoh Tsuda , Takayuki Yuasa
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/32 , H01S5/32341
摘要： A nitride semiconductor structure includes: a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and a nitride semiconductor film grown on the growth surface. A cavity is formed between the nitride semiconductor film and the substrate in the concave portion.
摘要翻译：氮化物半导体结构包括：具有生长表面的基底，在生长表面上形成凸部和凹部; 以及在生长表面上生长的氮化物半导体膜。在凹部中的氮化物半导体膜与基板之间形成有空穴。

39. 发明授权

US06294440B1 Semiconductor substrate, light-emitting device, and method for producing the same 有权
公开(公告)号：US06294440B1
公开(公告)日：2001-09-25
申请号：US09289575
申请日：1999-04-09
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
IPC分类号： H01L2120
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.

40. 发明申请

US20120063986A1 NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20120063986A1
公开(公告)日：2012-03-15
申请号：US13302266
申请日：2011-11-22
申请人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
发明人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
IPC分类号： C01B21/00
CPC分类号： H01S5/34333 , B82Y20/00 , C30B25/165 , C30B29/403 , C30B29/406 , H01S5/2004 , H01S5/3216 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.
摘要翻译：氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN 层和在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其中n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8-2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

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