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31. 发明申请

US20060063687A1 Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate 审中-公开
标题翻译：用于在基底上无蚀刻去除蚀刻后光致抗蚀剂和/或底部抗反射材料的组合物和方法
公开(公告)号：US20060063687A1
公开(公告)日：2006-03-23
申请号：US10944491
申请日：2004-09-17
申请人： David Minsek , David Bernhard , Thomas Baum
发明人： David Minsek , David Bernhard , Thomas Baum
IPC分类号： C11D7/32
CPC分类号： C11D7/3209 , C11D11/0047 , C23C22/63 , C23G1/20
摘要： An aqueous-based composition and process for removing photoresist and/or bottom anti-reflective coating (BARC) material from a substrate having such material(s) thereon. The aqueous-based composition includes a quaternary ammonium base, at least one co-solvent, and optionally a chelator. The composition achieves high-efficiency removal of photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.
摘要翻译：一种用于从其上具有这种材料的基材去除光致抗蚀剂和/或底部抗反射涂层（BARC）材料的水基组合物和方法。水基组合物包括季铵碱，至少一种共溶剂和任选的螯合剂。该组合物在集成电路的制造中实现了光致抗蚀剂和/或BARC材料的高效去除，而对衬底（例如铜）上的金属物质没有不利影响，并且不损坏半导体结构中使用的基于SiOC的介电材料。

32. 发明申请

US20060019850A1 Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations 审中-公开
标题翻译：使用致密流体/化学配方去除图案化硅/二氧化硅上的颗粒污染
公开(公告)号：US20060019850A1
公开(公告)日：2006-01-26
申请号：US11224214
申请日：2005-09-12
申请人： Michael Korzenski , Chongying Xu , Thomas Baum
发明人： Michael Korzenski , Chongying Xu , Thomas Baum
IPC分类号： C11D7/32
CPC分类号： C11D1/004 , B08B7/0021 , C11D1/83 , C11D3/042 , C11D3/046 , C11D3/201 , C11D3/2034 , C11D3/24 , C11D11/0047 , H01L21/02063 , H01L21/02101
摘要： A cleaning composition for cleaning particulate contamination from small dimensions on microelectronic device substrates. The cleaning composition contains dense CO2 (preferably supercritical CO2 (SCCO2)), alcohol, fluoride source, anionic surfactant source, non-ionic surfactant source, and optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the microelectronic device substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.
摘要翻译：一种用于从微电子器件基底上的小尺寸清洁颗粒污染物的清洁组合物。清洁组合物含有致密的CO 2（优选超临界CO 2（SCCO 2 2）），醇，氟化物源，阴离子表面活性剂源，离子表面活性剂源和任选的羟基添加剂。这种清洁组合物克服了作为清洁试剂的SCCO 2 N的固有缺陷，即SCCO 2的非极性特征，并且其不溶于物质如无机物盐和极性有机化合物，其存在于晶片衬底上的颗粒污染中，并且必须从微电子器件衬底移除以进行有效的清洁。清洁组合物能够对Si / SiO 2基体上具有颗粒污染物的基材进行无损伤，无残留的清洗。

33. 发明申请

US20050263075A1 Delivery systems for efficient vaporization of precursor source material 有权
标题翻译：用于高效蒸发前体源材料的输送系统
公开(公告)号：US20050263075A1
公开(公告)日：2005-12-01
申请号：US11157733
申请日：2005-06-21
申请人： Luping Wang , Thomas Baum , Chongying Xu
发明人： Luping Wang , Thomas Baum , Chongying Xu
IPC分类号： B01D1/00 , B01D7/00 , C23C14/00 , C23C16/00 , C23C16/448
CPC分类号： C23C16/4481 , B01D1/0082
摘要： A delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebetween, where the system further includes an input flow controller and/or an output flow controller to provide a controlled delivery of a vaporizable source material to the vaporization vessel and a controlled flow rate of vaporized source material to the processing tool.
摘要翻译：一种用于以对于半导体制造应用具有特殊用途的受控速率蒸发并递送蒸发的固体和液体前体材料的输送系统。该系统包括蒸发容器，处理工具和它们之间的连接蒸汽管线，其中系统还包括输入流量控制器和/或输出流量控制器，以向蒸发容器提供可蒸发的源材料的受控输送，蒸发的原料流向加工工具的流量。

34. 发明申请

US20050080286A1 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
标题翻译：包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法
公开(公告)号：US20050080286A1
公开(公告)日：2005-04-14
申请号：US10870106
申请日：2004-06-17
申请人： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas Baum
发明人： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas Baum
IPC分类号： C07F7/10 , C07F7/02
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译：在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

35. 发明申请

US20050042888A1 Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing 有权
标题翻译：半导体制造中阻挡材料的MOCVD的前体组成和工艺
公开(公告)号：US20050042888A1
公开(公告)日：2005-02-24
申请号：US10643110
申请日：2003-08-18
申请人： Jeffrey Roeder , Chongying Xu , Bryan Hendrix , Thomas Baum
发明人： Jeffrey Roeder , Chongying Xu , Bryan Hendrix , Thomas Baum
IPC分类号： B05D3/02 , C07F7/10 , C07F9/00 , C07F11/00 , C23C16/34 , H01L21/285 , H01L21/31 , H01L21/469 , H01L21/768
CPC分类号： C23C16/45553 , C07F7/10 , C07F9/005 , C07F11/005 , C23C16/34 , C23C16/345 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76801 , H01L21/76841
摘要： Metalorganic precursors of the formula: (R1R2N)a-bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a-1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1-C4 alkyl, C3-C6 cycloalkyl, and RO3Si, where each R0 can be the same or different and each R0 is independently selected from H and C1-C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).
摘要翻译：下式的金属有机前体：（R1R2N）a-bMXb其中：M是前体金属中心，选自Ta，Ti，W，Nb，Si，Al和B; a是等于M的化合价数; 1 <= b <=（A-1）; R 1和R 2可以彼此相同或不同，并且各自独立地选自H，C 1 -C 4烷基，C 3 -C 6环烷基和R 3 Si，其中每个R 0可以是相同或不同，每个R 0独立地选自H和C 1 -C 4烷基; X选自氯，氟，溴和碘。这种配方的前体可用于制造微电子器件结构中的导电阻挡材料的化学气相沉积（MOCVD），例如通过在含有氮的表面官能团的基底上的原子层化学气相沉积。进一步描述了在低温下，例如使用原子层化学气相沉积（ALCVD）在衬底上形成Si 3 N 4的方法。

36. 发明申请

US20050038276A1 Low dielectric constant thin films and chemical vapor deposition method of making same 审中-公开
标题翻译：低介电常数薄膜和化学气相沉积法制作相同
公开(公告)号：US20050038276A1
公开(公告)日：2005-02-17
申请号：US10937434
申请日：2004-09-09
申请人： Ravi Laxman , Chongying Xu , Thomas Baum
发明人： Ravi Laxman , Chongying Xu , Thomas Baum
IPC分类号： C07F7/08 , C07F7/18 , C23C16/30 , C07F7/04 , H01L21/31 , C08J7/04 , H01L21/469
CPC分类号： C23C16/30 , C07F7/0838 , C07F7/1896
摘要： A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are produced using di(formato)dimethylsilane as the organosilicon precursor.
摘要翻译：使用具有至少一个烷基和至少一个可裂解的有机官能团的有机硅前体组合物生产低介电常数的SiOC薄膜的CVD方法，当被激活重新排列并且作为高挥发性液体或气态副产物裂解时。在第一步骤中，由具有至少一个烷基和至少一个可切割的有机官能团的有机硅前体CVD沉积致密的SiOC薄膜，其中保留有至少一部分烷基和可裂解的有机官能团。在第二步骤中，将致密的SiOC薄膜进行后退火以有效地除去挥发性液体或气态副产物，导致多孔低介电常数SiOC薄膜。多孔，低介电常数的SiOC薄膜可用作微电子器件结构中的绝缘层。使用二（格式）二甲基硅烷作为有机硅前体制备优选的多孔，低介电SiOC薄膜。

37. 发明申请

US20070218205A1 CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM 有权
标题翻译：高电导率的化学气相沉积，RENHENIUM的薄膜
公开(公告)号：US20070218205A1
公开(公告)日：2007-09-20
申请号：US11750134
申请日：2007-05-17
申请人： Bryan Hendrix , James Welch , Steven Bilodeau , Jeffrey Roeder , Chongying Xu , Thomas Baum
发明人： Bryan Hendrix , James Welch , Steven Bilodeau , Jeffrey Roeder , Chongying Xu , Thomas Baum
IPC分类号： C23C16/08
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

38. 发明申请

US20070111533A1 REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS 有权
标题翻译：使用超临界流体/化学配方去除MEMS功能层
公开(公告)号：US20070111533A1
公开(公告)日：2007-05-17
申请号：US11620902
申请日：2007-01-08
申请人： Michael Korzenski , Thomas Baum , Chongying Xu , Eliodor Ghenciu
发明人： Michael Korzenski , Thomas Baum , Chongying Xu , Eliodor Ghenciu
IPC分类号： H01L21/302
CPC分类号： H01L21/02101 , B81C1/00476 , H01L21/31105 , H01L21/32131
摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.
摘要翻译：描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

39. 发明申请

US20060148271A1 Silicon source reagent compositions, and method of making and using same for microelectronic device structure 审中-公开
标题翻译：硅源试剂组合物，以及制造和使用它们用于微电子器件结构的方法
公开(公告)号：US20060148271A1
公开(公告)日：2006-07-06
申请号：US11363904
申请日：2006-02-28
申请人： Alexander Borovik , Ziyun Wang , Chongying Xu , Thomas Baum , Brian Benac , Bryan Hendrix , Jeffrey Roeder
发明人： Alexander Borovik , Ziyun Wang , Chongying Xu , Thomas Baum , Brian Benac , Bryan Hendrix , Jeffrey Roeder
IPC分类号： H01L21/469
CPC分类号： H01L21/28185 , C07F7/003 , C07F7/025 , C07F7/10 , C23C14/08 , C23C14/083 , C23C16/401 , C23C16/405 , H01L21/02142 , H01L21/02148 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/28167 , H01L21/28194 , H01L21/3125 , H01L21/31604 , H01L21/3185 , H01L29/517 , H01L29/518
摘要： A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4−x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity. Also described is a method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.
摘要翻译：一种使用式M（NR 1，R 2）2 x的金属茂化合物在基片上形成栅极电介质薄膜的CVD方法，其中M 选自Zr，Hf，Y，La，镧系元素，Ta，Ti，Al; N是氮; R 1和R 2各自相同或不同，并且独立地选自H，芳基，全氟芳基，C 1 -C 8烷基，C 1 全氟烷基，烷基甲硅烷基，x是金属M上的氧化态; 和式H x Si（NR 1，R 2）4-x N的氨基硅烷化合物，其中H 是氢; x为0〜3; 硅是硅; N是氮; R 1和R 2各自相同或不同，并且独立地选自H，芳基，全氟芳基，C 1 -C 8烷基和C 1 -C 8烷基， C 1 -C 8全氟烷基。与标准的SiO 2栅极电介质材料相比，这些栅极电介质材料提供低水平的碳和卤化物杂质。还描述了通过氨基硅烷前体化合物与胺源试剂化合物在包含至少一种活化溶剂组分的溶剂介质中反应合成氨基硅烷源试剂组合物的方法，得到具有小于1000ppm卤素的氨基硅烷源试剂组合物。

40. 发明申请

US20050283012A1 Copper (I) compounds useful as deposition precursors of copper thin films 有权
标题翻译：可用作铜薄膜沉积前体的铜（I）化合物
公开(公告)号：US20050283012A1
公开(公告)日：2005-12-22
申请号：US11149045
申请日：2005-06-09
申请人： Chongying Xu , Alexander Borovik , Thomas Baum
发明人： Chongying Xu , Alexander Borovik , Thomas Baum
IPC分类号： C07C257/14 , C07F1/08 , C23C16/00 , C23C16/18
CPC分类号： C07C257/14 , C07F1/005 , C23C16/18
摘要： Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
摘要翻译：用于在制造半导体器件中形成铜薄膜的铜（I）脒前体，以及使用化学气相沉积或原子层沉积工艺在基片上沉积铜（I）脒前体的方法。

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