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31. 发明授权

US07202144B2 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US07202144B2
公开(公告)日：2007-04-10
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/20
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

32. 发明授权

US07005675B2 Light-emitting device, method for driving light-emitting device and element board 失效
标题翻译：发光装置，驱动发光装置和元件板的方法
公开(公告)号：US07005675B2
公开(公告)日：2006-02-28
申请号：US10447268
申请日：2003-05-29
申请人： Yasuhiro Sakamoto , Takeshi Noda , Kazutaka Inukai
发明人： Yasuhiro Sakamoto , Takeshi Noda , Kazutaka Inukai
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , G09G3/3233 , G09G3/3283 , G09G2300/0417 , G09G2300/0426 , G09G2300/0809 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/043 , H01L27/3244
摘要： A current-input light-emitting device of the invention converts a current corresponding to a given video signal to a voltage by passing the current between two nodes of four nodes of a multi-terminal transistor, converts the voltage to a current again by shorting the other two nodes different and supplies the current to a light-emitting element. A threshold-corrected, voltage-input light-emitting device shorts two nodes of four nodes of a multi-terminal transistor to write a threshold value voltage into a storage capacitor and to write a voltage corresponding to a given video signal into the storage capacitor. Next, the other two nodes are shorted, and the voltage of the two nodes is converted to a current. Then the current is supplied to a light-emitting element.
摘要翻译：本发明的电流输入发光装置通过使多端子晶体管的四个节点的两个节点之间的电流通过来将与给定视频信号相对应的电流转换为电压，通过短路将电压转换为电流其他两个节点不同，并将电流提供给发光元件。阈值校正的电压输入发光装置使多端子晶体管的四个节点的两个节点短路，将阈值电压写入存储电容器，并将与给定视频信号相对应的电压写入存储电容器。接下来，其他两个节点短路，并将两个节点的电压转换为电流。然后将电流提供给发光元件。

33. 发明申请

US20050214959A1 Semiconductor thin film manufacturing method 有权
标题翻译：半导体薄膜制造方法
公开(公告)号：US20050214959A1
公开(公告)日：2005-09-29
申请号：US11030065
申请日：2005-01-07
申请人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
发明人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/66 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/02683 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L22/12 , H01L27/1214 , H01L27/1285 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor thin film. includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.
摘要翻译：一种形成半导体薄膜的方法。包括用于检测横向晶体的高灵敏度检查方法和结晶方法。在结晶方法中，激光SXL的时间脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB 1的同时，在所需区域中形成近似带状晶体硅膜SPSI。在检查方法中，在激光SXL关闭之后，将检查光束PRO 1照射到基板。如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。检测光束PRO 1由突出部TOKI散射并由检测器观测。如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

34. 发明申请

US20050170618A1 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US20050170618A1
公开(公告)日：2005-08-04
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： G02F1/1368 , C30B1/06 , G02F1/133 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

35. 发明申请

US20050073243A1 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20050073243A1
公开(公告)日：2005-04-07
申请号：US10602980
申请日：2003-06-24
申请人： Shunpei Yamazaki , Takeshi Noda
发明人： Shunpei Yamazaki , Takeshi Noda
IPC分类号： H05B33/22 , G09F9/30 , H01J1/62 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/50 , H01L51/52 , H05B33/04 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/26
CPC分类号： H01L27/3246 , H01L27/3272 , H01L51/0005 , H01L51/5218 , H01L51/5228 , H01L51/5253 , H01L51/5284
摘要： In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.
摘要翻译：在顶部发光结构中，存在在发光区域以外的区域中设置布线，TFT等的问题，使得由布线反射的光到达观察者的眼睛。本发明通过在除了发光区域之外的区域中设置吸光多层膜（61）来防止被电线反射的光到达观察者的眼睛。具体而言，吸光性多层膜（61）用作覆盖第一电极（66b）的端部的分隔壁（也称为隔堤或隔壁）的上层，有机树脂膜（67）为用作分隔壁的下层。本发明的分隔壁的特征在于由不同材料形成的3层以上的层叠体。

36. 发明授权

US09905809B2 Light emitting device 有权
公开(公告)号：US09905809B2
公开(公告)日：2018-02-27
申请号：US13205872
申请日：2011-08-09
申请人： Satoshi Seo , Takeshi Noda , Shunpei Yamazaki
发明人： Satoshi Seo , Takeshi Noda , Shunpei Yamazaki
IPC分类号： H01L33/60 , H01L51/52 , H01L51/50 , H01L27/32
CPC分类号： H01L51/5278 , H01L27/3211 , H01L27/3244 , H01L51/5044 , H01L51/5218 , H01L51/5265
摘要： It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

37. 发明授权

US08670082B2 Thin film transistor, display device and liquid crystal display device 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置
公开(公告)号：US08670082B2
公开(公告)日：2014-03-11
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

38. 发明授权

US08530898B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08530898B2
公开(公告)日：2013-09-10
申请号：US12912799
申请日：2010-10-27
申请人： Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/78621 , H01L29/78627
摘要： A display device which uses a TFT having a gate electrode film thereof arranged on a light source side can also suppress the increase of parasitic capacitance while suppressing the generation of a light leakage current. On at least one end of the TFT, between a high concentration region which constitutes a source region or a drain region and a channel region, a first low concentration region which is arranged on a high concentration region side and exhibits low impurity concentration and a second low concentration region which exhibits impurity concentration even lower than the impurity concentration of the first low concentration region are provided in this order.
摘要翻译：使用其中设置在光源侧的具有栅电极膜的TFT的显示装置也可以抑制寄生电容的增加同时抑制漏光电流的产生。在TFT的至少一端，在构成源极区域或漏极区域的高浓度区域和沟道区域之间，配置在高浓度区域侧且显示低杂质浓度的第一低浓度区域和第二按照该顺序设置表现出比第一低浓度区域的杂质浓度更低的杂质浓度的低浓度区域。

39. 发明授权

US08368077B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08368077B2
公开(公告)日：2013-02-05
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译：形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。第一线层形成为覆盖第一接触孔。在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。在第二接触孔上形成第二线层。

40. 发明授权

US08362688B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08362688B2
公开(公告)日：2013-01-29
申请号：US12966157
申请日：2010-12-13
申请人： Takeshi Noda
发明人： Takeshi Noda
IPC分类号： H05B33/00
CPC分类号： H01L33/26 , H01L51/5048 , H01L51/5203 , H01L51/5209 , H05B33/24
摘要： It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.
摘要翻译：本发明的目的是提供一种发光装置，其中即使当具有诸如铝的高反射率的材料用于电极时，可以在电极上形成包含氧的层，而不增加接触电阻，并且其制造方法。根据本发明，其特征在于，具有由具有高反射率的导电膜如铝，银以及包含铝的合金或含有银的合金的叠层结构的电极和导电性的发光元件在导电膜上设置由难熔金属材料构成的膜，或者具有发光元件的发光装置。

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