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31. 发明授权

US08951917B2 Composition for forming resist underlayer film and patterning process using the same 有权
标题翻译：用于形成抗蚀剂下层膜的组合物和使用其的图案化方法
公开(公告)号：US08951917B2
公开(公告)日：2015-02-10
申请号：US13524669
申请日：2012-06-15
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Fujio Yagihashi
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Fujio Yagihashi
IPC分类号： C09D183/00 , C09D183/06 , C08L83/06 , H01L21/312 , G03F7/075 , G03F7/09 , C08G77/14 , C08G77/18 , C08G77/56 , C08G77/58
CPC分类号： C09D183/06 , C08G77/14 , C08G77/18 , C08G77/56 , C08G77/58 , C08L83/06 , G03F7/0751 , G03F7/0752 , G03F7/094
摘要： The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition R1m1R2m2R3m3Si(OR)(4-m1-m2-m3) (1) U(OR4)m4(OR5)m5 (2) R6m6R7m7R8m8Si(OR9)(4-m6-m7-m8) (3) Si(OR10)4 (4).
摘要翻译：本发明提供一种用于形成含硅抗蚀剂下层膜的组合物，其包含：（A）通过水解 - 缩合反应获得的含硅化合物，所述含硅化合物含有至少一种或多种可水解的硅化合物，式（1）和一种或多种下述通式（2）所示的可水解化合物，和（B）通过水解缩合反应获得的含硅化合物，所述含硅化合物含有至少一种或多种可水解硅化合物由以下通式（3）表示，和一种或多种下述通式（4）表示的可水解硅化合物。可以提供一种用于形成抗蚀剂下层膜的组合物，其不仅可用于以负显影获得的抗蚀图案，而且可应用于以常规阳极显影获得的抗蚀剂图案，以及使用该组合物R1m1R2m2R3m3Si（OR）（4） -m1-m2-m3）（1）U（OR4）m4（OR5）m5（2）R6m6R7m7R8m8Si（OR9）（4-m6-m7-m8）（3）Si（OR10）4（4）。

32. 发明授权

US08859189B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08859189B2
公开(公告)日：2014-10-14
申请号：US13430319
申请日：2012-03-26
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
IPC分类号： G03F7/26 , G03F7/075 , G03F7/32
CPC分类号： G03F7/0752 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35° or more to lower than 70° after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development.
摘要翻译：本发明提供一种图案化工艺，其至少包括通过使用含硅膜组合物在待加工物体上形成含硅膜的步骤，在含硅膜上形成光致抗蚀剂的步骤通过使用抗蚀剂组合物的膜，通过热处理后暴露于光致抗蚀剂膜的步骤，以及通过使用有机溶剂的显影剂溶解光致抗蚀剂膜的未曝光区域而形成负图案的步骤; 其中使用赋予与光致抗蚀剂膜的曝光区域相对应的部分中的纯水接触角在曝光后变为35°以上且低于70°的范围内的含硅膜的组合物作为组合物。作为通过采用有机溶剂型显影形成的负型抗蚀剂图案的图案化工艺，可以进行最佳的图案化处理。

33. 发明授权

US08697330B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same 有权
标题翻译：用于形成含硅抗反射膜的组合物，从组合物制备含硅抗反射膜的基板和使用其的图案化工艺
公开(公告)号：US08697330B2
公开(公告)日：2014-04-15
申请号：US12662582
申请日：2010-04-23
申请人： Tsutomu Ogihara , Toshiharu Yano , Takafumi Ueda
发明人： Tsutomu Ogihara , Toshiharu Yano , Takafumi Ueda
IPC分类号： G03F7/09 , G03F7/11 , C08G77/04
CPC分类号： G03F7/0755 , C08G77/04 , C09D183/04 , G03F7/0752 , G03F7/091 , G03F7/11 , G03F7/2041 , H01L21/0276
摘要： There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n−3.08≦k≦20n−29.4 and 0.01≦k≦0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same.
摘要翻译：公开了一种热固性含硅抗反射膜形成组合物，用于在光刻中使用的多层抗蚀剂工艺中形成含硅抗反射膜，其中组合物至少能够形成在作为底层的有机膜上具有萘骨架的膜 - 193nm处的折射率“n”和消光系数“k”的含硅抗反射膜满足以下关系：2n-3.08＆nlE; k＆lt; ll; 20n-29.4和0.01＆nlE; k＆nlE; 0.5。在光刻中使用的多层抗蚀剂工艺中，可以提供一种形成含硅抗反射膜的热固性含硅抗反射膜形成组合物，该组合物可以形成具有在曝光光的下降反射的优异图案，在具有萘骨架的有机膜上形成的含硅抗反射膜作为抗蚀剂下层膜上形成光致抗蚀剂膜，随后形成抗蚀剂图案; 在作为含硅抗反射膜的上层的光致抗蚀剂膜与作为下层的有机膜之间具有优良的干蚀刻性能; 并且具有优异的储存稳定性，以及具有来自用于形成含硅抗反射膜的组合物的含硅抗反射膜的基板和使用其的图案化工艺。

34. 发明申请

US20120052685A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS 有权
标题翻译：含硅的成膜组合物，含硅膜形成的基材和方法
公开(公告)号：US20120052685A1
公开(公告)日：2012-03-01
申请号：US13205262
申请日：2011-08-08
申请人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO , Koji HASEGAWA
发明人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO , Koji HASEGAWA
IPC分类号： H01L21/311 , G03F7/00 , G03F7/11
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/091 , G03F7/11
摘要： A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.
摘要翻译：一种用于形成用于光刻的多层抗蚀剂工艺中的含硅膜的热固性含硅膜形成组合物，该组合物至少包括：（A）通过水解缩合得到的含硅化合物可水解硅化合物和选自可水解硅化合物和反应性化合物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价或两价或更多价的有机酸; 和（D）有机溶剂。

35. 发明申请

US20100285407A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same 有权
标题翻译：用于形成含硅抗反射膜的组合物，从组合物制备含硅抗反射膜的基板和使用其的图案化工艺
公开(公告)号：US20100285407A1
公开(公告)日：2010-11-11
申请号：US12662582
申请日：2010-04-23
申请人： Tsutomu Ogihara , Toshiharu Yano , Takafumi Ueda
发明人： Tsutomu Ogihara , Toshiharu Yano , Takafumi Ueda
IPC分类号： G03F7/004 , G03F7/20 , C08G77/00
CPC分类号： G03F7/0755 , C08G77/04 , C09D183/04 , G03F7/0752 , G03F7/091 , G03F7/11 , G03F7/2041 , H01L21/0276
摘要： There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n−3.08≦k≦20n−29.4 and 0.01≦k≦0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same.
摘要翻译：公开了一种热固性含硅抗反射膜形成组合物，用于在光刻中使用的多层抗蚀剂工艺中形成含硅抗反射膜，其中组合物至少能够形成在作为底层的有机膜上具有萘骨架的膜 - 193nm处的折射率“n”和消光系数“k”的含硅抗反射膜满足以下关系：2n-3.08＆nlE; k＆lt; ll; 20n-29.4和0.01＆nlE; k＆nlE; 0.5。在光刻中使用的多层抗蚀剂工艺中，可以提供一种形成含硅抗反射膜的热固性含硅抗反射膜形成组合物，该组合物可以形成具有在曝光光的下降反射的优异图案，在具有萘骨架的有机膜上形成的含硅抗反射膜作为抗蚀剂下层膜上形成光致抗蚀剂膜，随后形成抗蚀剂图案; 在作为含硅抗反射膜的上层的光致抗蚀剂膜与作为下层的有机膜之间具有优良的干蚀刻性能; 并且具有优异的储存稳定性，以及具有来自用于形成含硅抗反射膜的组合物的含硅抗反射膜的基板和使用其的图案化工艺。

36. 发明授权

US07485690B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method 有权
标题翻译：牺牲成膜组合物，图案化工艺，牺牲膜和去除方法
公开(公告)号：US07485690B2
公开(公告)日：2009-02-03
申请号：US11148380
申请日：2005-06-09
申请人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
发明人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
IPC分类号： C08G77/08
CPC分类号： G03F7/094 , G03F7/0752 , H01L21/31116 , H01L21/31144 , H01L21/76808
摘要： A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2): X—Y—SiZ3 (1) RnSiZ4-n (2) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.
摘要翻译：提供牺牲性成膜组合物，其包含（A）作为具有式（1）和（2）的可水解硅烷的共水解缩合物的硅氧烷树脂：<？在线配方说明=“在线配方” end =“lead”？> XY-SiZ3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula end =“lead”？> RnSiZ4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，例如未取代的羟基或取代或未取代的环氧基，酰氧基或丙烯酰氧基，Y为单键或二价烃基，R为氢或一价烃基，n为0〜3的整数，有机硅树脂为能够通过式（1）中的交联性有机官能团交联反应，（B）交联剂，（C）酸产生剂和（D）有机溶剂进行交联反应。该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。

37. 发明授权

US07417104B2 Porous film-forming composition, patterning process, and porous sacrificial film 有权
标题翻译：多孔成膜组合物，图案化工艺和多孔牺牲膜
公开(公告)号：US07417104B2
公开(公告)日：2008-08-26
申请号：US11148371
申请日：2005-06-09
申请人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda
发明人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda
IPC分类号： C08G77/08 , C08L83/04
CPC分类号： C08G77/04 , C08G77/08 , C08G77/14 , C09D183/04 , C09D183/06 , G03F7/0757 , H01L21/02123 , H01L21/02211 , H01L21/02282 , H01L21/0276 , H01L21/31144 , H01L21/3121 , H01L21/76808
摘要： A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.
摘要翻译：提供了一种多孔成膜组合物，其包含（A）通过具有式（1）的可水解硅烷的水解缩合得到的聚合物：<？in-line-formula description =“In-line Formulas”end =“lead” （1）<β在线公式描述中的一个或多个（1）其中R 1是一价有机基团或氢，R 2是可水解基团或羟基，并且其中R 1是一价有机基团或氢原子， n为0〜3的整数，其水解物或其部分缩合物，条件是含有至少一种具有有机交联基团的硅化合物为R 1，所述聚合物能够通过有机交联基团进行交联反应，和（B）有机溶剂。该组合物具有提高的储存稳定性，填充性能，粘合性和涂层均匀性，足以形成可溶于剥离溶液中的牺牲膜。

38. 发明申请

US20070238300A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method 有权
标题翻译：含硅成膜组合物，含硅膜，含硅膜基材和图案化方法
公开(公告)号：US20070238300A1
公开(公告)日：2007-10-11
申请号：US11783542
申请日：2007-04-10
申请人： Tsutomu Ogihara , Takafumi Ueda , Motoaki Iwabuchi
发明人： Tsutomu Ogihara , Takafumi Ueda , Motoaki Iwabuchi
IPC分类号： H01L21/311
CPC分类号： C08G77/08 , C08L83/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.
摘要翻译：由含有（A）通过在酸催化剂的存在下进行水解性缩合而得到的含硅化合物，并从反应混合物中基本除去酸催化剂的热固性组合物形成含硅膜，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或锍，碘鎓盐或铵化合物，（C）有机酸和（D）有机溶剂。含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。该组合物有效地使光刻后的图案缺陷的发生最小化并且是稳定的。

39. 发明授权

US08343711B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08343711B2
公开(公告)日：2013-01-01
申请号：US12662078
申请日：2010-03-30
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/091 , H01L21/0273
摘要： There is disclosed a patterning process comprises at least (1) a step of forming an organic underlayer film on a substrate and then forming a photoresist pattern on the organic underlayer film, (2) a step of attaching an alkaline solution containing an alkaline substance onto the photoresist pattern and then removing the excess alkaline solution, (3) a step of applying a solution of a siloxane polymer crosslinkable by action of the alkaline substance onto the photoresist pattern to form a crosslinked part by crosslinking the siloxane polymer near the photoresist patterns, and (4) a step of removing the uncrosslinked siloxane polymer and the photoresist pattern. There can be provided a patterning process capable of forming a further finer pattern simply and efficiently and with a high practicability applicable to semiconductor manufacturing.
摘要翻译：公开了一种图案化工艺，至少包括（1）在衬底上形成有机下层膜，然后在有机下层膜上形成光致抗蚀剂图案的步骤，（2）将含有碱性物质的碱性溶液附着到光致抗蚀剂图案，然后除去过量的碱性溶液，（3）通过将光致抗蚀剂图案附近的硅氧烷聚合物交联，将通过碱性物质的作用将可交联的硅氧烷聚合物溶液施加到光致抗蚀剂图案上以形成交联部分的步骤，和（4）去除未交联的硅氧烷聚合物和光致抗蚀剂图案的步骤。可以提供能够简单有效地形成更精细图案并且具有适用于半导体制造的高实用性的图案化工艺。

40. 发明授权

US08329376B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method 有权
标题翻译：含硅成膜组合物，含硅膜，含硅膜基材和图案化方法
公开(公告)号：US08329376B2
公开(公告)日：2012-12-11
申请号：US11783542
申请日：2007-04-10
申请人： Tsutomu Ogihara , Takafumi Ueda , Motoaki Iwabuchi
发明人： Tsutomu Ogihara , Takafumi Ueda , Motoaki Iwabuchi
IPC分类号： G03C1/00 , G03F7/00 , C08G77/00 , C08G77/06 , C08G77/60
CPC分类号： C08G77/08 , C08L83/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.
摘要翻译：由含有（A）通过在酸催化剂的存在下进行水解性缩合而得到的含硅化合物，并从反应混合物中基本除去酸催化剂的热固性组合物形成含硅膜，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或锍，碘鎓盐或铵化合物，（C）有机酸和（D）有机溶剂。含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。该组合物有效地使光刻后的图案缺陷的发生最小化并且是稳定的。

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