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31. 发明申请

US20070090362A1 Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法和具有薄膜晶体管的平板显示器
公开(公告)号：US20070090362A1
公开(公告)日：2007-04-26
申请号：US11582973
申请日：2006-10-19
申请人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
IPC分类号： H01L29/76 , H01L21/84
CPC分类号： H01L51/052 , B82Y10/00 , B82Y30/00 , H01L51/0004 , H01L51/0541 , H01L51/0545
摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.
摘要翻译：薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

32. 发明申请

US20060169974A1 Thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的平板显示装置
公开(公告)号：US20060169974A1
公开(公告)日：2006-08-03
申请号：US11338089
申请日：2006-01-24
申请人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
发明人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0541 , H01L51/0562
摘要： Provided are a thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and a channel formation-promoting layer that contacts an opposite region of a channel region of the organic semiconductor layer, and contains a compound having a functional group, which fixes electric charges moving toward the opposite region of the channel region to the opposite region of the channel region. Thus, the thin film transistor has a low threshold voltage and excellent electric charge mobility.
摘要翻译：提供一种薄膜晶体管，其制造方法和包括该薄膜晶体管的平板显示装置。薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及沟道形成促进层，其与有机半导体层的沟道区域的相反区域接触，并且包含具有官能团的化合物，其将朝向沟道区域的相对区域移动的电荷固定到渠道区域。因此，薄膜晶体管具有低阈值电压和优异的电荷迁移率。

33. 发明申请

US20050100737A1 Cyclohexyl silyl or phenyl silyl substituted poly (phenylenevinylene) derivative, electroluminescence device using the same and production method thereof 审中-公开
标题翻译：环己基甲硅烷基或苯基甲硅烷基取代的聚（亚苯基亚乙烯基）衍生物，使用该衍生物的电致发光器件及其制备方法
公开(公告)号：US20050100737A1
公开(公告)日：2005-05-12
申请号：US10484649
申请日：2002-07-22
申请人： Hong Shim , Taek Ahn , Seoung Ko , Jae Lee , Jong Kim
发明人： Hong Shim , Taek Ahn , Seoung Ko , Jae Lee , Jong Kim
IPC分类号： H01L51/50 , C08G61/02 , C09K11/06 , H01L51/30 , B32B15/04 , C08G77/00
CPC分类号： H01L51/0038 , C08G61/02 , C09K11/06 , C09K2211/1408 , C09K2211/1425 , H01L51/0094 , H01L51/5012 , Y10T428/31504 , Y10T428/31678
摘要： Disclosed is a luminescent polymer applicable to various electroluminescence devices, and more specifically, a novel poly(p-phenylvinylene) derivative with cyclohexyl or phenyl substituted silyl group on the side chain thereof, represented by the following formula 1. The luminescent polymer is excellent in thermal properties and luminance efficiency, and radiates at a green light wavelength range due to electronic properties of the silyl substituent, thus serving as an electroluminescence device material. wherein R is a cyclohexyl or phenyl substituted silyl group; and m is an integer of 1-4.
摘要翻译：公开了适用于各种电致发光器件的发光聚合物，更具体而言，由下式1表示的其侧链上具有环己基或苯基取代甲硅烷基的新型聚（对苯乙烯）衍生物。发光聚合物优异热性能和亮度效率，并且由于甲硅烷基取代基的电子性质而在绿光波长范围内辐射，因此用作电致发光器件材料。其中R是环己基或苯基取代的甲硅烷基; m为1-4的整数。

34. 发明授权

US08318533B2 Method of manufacturing an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08318533B2
公开(公告)日：2012-11-27
申请号：US12662192
申请日：2010-04-05
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L51/40 , H01L21/00 , H01L21/44
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

35. 发明申请

US20100197085A1 Method of manufacturing an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20100197085A1
公开(公告)日：2010-08-05
申请号：US12662192
申请日：2010-04-05
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L51/40
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

36. 发明授权

US07714324B2 Organic thin film transistor and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07714324B2
公开(公告)日：2010-05-11
申请号：US11527894
申请日：2006-09-26
申请人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
发明人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
IPC分类号： H01L51/10
CPC分类号： H01L51/0545 , H01L51/105
摘要： An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.
摘要翻译：公开了一种在源极和漏极之间具有改善的接触的有机TFT和有机半导体层，其制造方法以及具有有机TFT的有机发光显示装置。有机TFT包括基板，设置在基板上的栅极电极，覆盖栅极的栅极绝缘膜，设置在栅极绝缘膜上的源电极和漏电极，设置在栅极绝缘膜上的剥离层以接触源极和漏极的至少一部分端面，以及接触源极和漏极的有机半导体层。

37. 发明授权

US07692185B2 Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor 失效
标题翻译：有机薄膜晶体管，包括该有机薄膜晶体管的平板显示装置以及制造该有机薄膜晶体管的方法
公开(公告)号：US07692185B2
公开(公告)日：2010-04-06
申请号：US11546342
申请日：2006-10-12
申请人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
发明人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
IPC分类号： H01L51/00
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , H01L27/3274 , H01L51/0012 , H01L51/0541 , H01L51/105
摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.
摘要翻译：一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。

38. 发明授权

US07646012B2 Organic thin film transistor and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07646012B2
公开(公告)日：2010-01-12
申请号：US11505912
申请日：2006-08-18
申请人： Sung Jin Kim , Taek Ahn , Min-Chul Suh , Sin-Doo Lee
发明人： Sung Jin Kim , Taek Ahn , Min-Chul Suh , Sin-Doo Lee
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0004 , H01L21/268 , H01L51/0545
摘要： An organic thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a first electrode, and a second electrode disposed on the substrate, a first layer disposed on the substrate, the first layer being photosensitive, a second layer disposed on the first layer, the second layer being hydrophobic, an opening defined in the first and second layers, the opening corresponding to the gate electrode, and a hydrophilic organic semiconductor disposed in the opening.
摘要翻译：有机薄膜晶体管包括基板，栅电极，栅极绝缘层，第一电极和设置在基板上的第二电极，设置在基板上的第一层，第一层是感光的，第二层设置在第一层，第二层是疏水性的，限定在第一层和第二层中的开口，对应于栅电极的开口和设置在开口中的亲水性有机半导体。

39. 发明授权

US07518140B2 Flat panel display and method of fabricating the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US07518140B2
公开(公告)日：2009-04-14
申请号：US11480549
申请日：2006-07-05
申请人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
发明人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
IPC分类号： H01L29/08
CPC分类号： H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L51/0541 , H01L51/5218 , H01L2251/5315
摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.
摘要翻译：平板显示装置包括具有限定像素的开口的栅极绝缘层。平板显示装置包括：基板; 形成在所述基板上的源电极和漏电极; 与源电极和漏极接触的半导体层; 形成在基板上的栅极; 形成在所述源极和漏极之间的绝缘层和所述栅极，并且包括开口; 以及由绝缘层的开口部分地露出的像素电极。绝缘层用作限定像素电极的栅极绝缘层和像素限定层。

40. 发明申请

US20070134857A1 Method of preparing organic thin film transistor, organic thin film transistor, and organic light-emitting display device including the organic thin film transistor 有权
标题翻译：制备有机薄膜晶体管的方法，有机薄膜晶体管和包括有机薄膜晶体管的有机发光显示装置
公开(公告)号：US20070134857A1
公开(公告)日：2007-06-14
申请号：US11637997
申请日：2006-12-12
申请人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
发明人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
IPC分类号： H01L21/84
CPC分类号： H01L51/0002 , H01L51/0541 , H01L51/0558 , H01L2251/5338
摘要： A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain electrodes; first surface-treating the insulating layer so that the insulating layer has a hydrophobic surface; forming an opening that exposes facing portions of the source and drain electrodes in the first surface-treated insulating layer; forming an organic semiconductor layer and a gate insulating layer in the opening; second surface-treating the first surface-treated insulating layer so that the insulating layer has a hydrophilic surface; and forming a gate electrode overlapping at least a portion of the source and drain electrodes, an organic thin film transistor, and a flat panel display device including the organic thin film transistor. According to the method of preparing an organic thin film transistor as described above, at least one of an organic semiconductor layer and a gate insulating layer can be easily formed. When the organic thin film transistor is formed in an array form with respect to a capacitor, the organic thin film transistor has a substantially low parasitic capacitance and the capacitor has a high capacitance.
摘要翻译：公开了一种形成有机薄膜晶体管的方法。该方法包括在衬底上形成源电极和漏电极; 形成覆盖源极和漏极的绝缘层; 首先对所述绝缘层进行表面处理，使得所述绝缘层具有疏水性表面; 形成在所述第一表面处理绝缘层中露出所述源极和漏极的相对部分的开口; 在开口中形成有机半导体层和栅极绝缘层; 对所述第一表面处理绝缘层进行表面处理，以使所述绝缘层具有亲水性表面; 以及形成与所述源极和漏极的至少一部分重叠的栅电极，有机薄膜晶体管和包括所述有机薄膜晶体管的平板显示装置。根据如上所述制备有机薄膜晶体管的方法，可以容易地形成有机半导体层和栅极绝缘层中的至少一个。当有机薄膜晶体管相对于电容器形成阵列形式时，有机薄膜晶体管具有大大低的寄生电容，并且电容器具有高电容。

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