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    • 32. 发明申请
    • System and method for growing nanostructures from a periphery of a catalyst layer
    • 从催化剂层的周边生长纳米结构的系统和方法
    • US20060084570A1
    • 2006-04-20
    • US11035595
    • 2005-01-14
    • Thomas KopleyJennifer LuNicolas MollSungsoo Yi
    • Thomas KopleyJennifer LuNicolas MollSungsoo Yi
    • B01J21/04
    • B82Y40/00B01J23/74B01J35/0013C01B32/162
    • Systems and methods are provided for limiting the growth of nanostructures, such as nanotubes, from a catalyst layer. More particularly, systems and methods are provided for growing nanostructures from the periphery of a catalyst layer. In certain embodiments, a catalyst layer from which nanostructures can be grown during a growth process, such as CVD or PECVD, is located on a substrate. The catalyst layer is covered with a covering layer such that the catalyst layer is sandwiched between the substrate and the covering layer. The resulting structure then undergoes a nanostructure growth process. Because the catalyst layer is sandwiched between the substrate and the covering layer, growth of nanostructures is limited to growth from nanoparticles located on the periphery of the catalyst layer. Thus, growth of nanostructures does not result from nanoparticles located in an interior region of the catalyst layer.
    • 提供了系统和方法,用于从催化剂层限制纳米结构如纳米管的生长。 更具体地,提供了用于从催化剂层的周边生长纳米结构的系统和方法。 在某些实施方案中,在生长过程(例如CVD或PECVD)中可以从其中生长纳米结构的催化剂层位于基底上。 催化剂层被覆盖层覆盖,使得催化剂层夹在基板和覆盖层之间。 所得结构然后经历纳米结构生长过程。 由于催化剂层夹在基材和覆盖层之间,纳米结构的生长被限制在从位于催化剂层周边的纳米颗粒生长。 因此,纳米结构的生长不是由位于催化剂层的内部区域中的纳米颗粒产生的。