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    • 36. 发明授权
    • Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
    • 种子和种子组合,用于高质量生长的大型碳化硅单晶
    • US07192482B2
    • 2007-03-20
    • US10915095
    • 2004-08-10
    • Stephan MuellerAdrian PowellValeri F. Tsvetkov
    • Stephan MuellerAdrian PowellValeri F. Tsvetkov
    • C30B25/12
    • C30B23/005C30B29/36Y10S117/911Y10T117/10Y10T117/1032
    • A silicon carbide seeded sublimation growth system and associated method are disclosed. The system includes a crucible, a silicon carbide source composition in the crucible, a seed holder in the crucible, a silicon carbide seed crystal on the seed holder, means for creating a major thermal gradient in the crucible that defines a major growth direction between the source composition and the seed crystal for encouraging vapor transport between the source composition and the seed crystal, and the seed crystal being positioned on the seed holder with the macroscopic growth surface of the seed crystal forming an angle of between about 70° and 89.5° degrees relative to the major thermal gradient and the major growth direction and with the crystallographic orientation of the seed crystal having the c-axis of the crystal forming an angle with the major thermal gradient of between about 0° and 2°.
    • 公开了一种碳化硅种子升华生长系统及其相关方法。 该系统包括坩埚,坩埚中的碳化硅源组合物,坩埚中的种子保持器,种子保持器上的碳化硅晶种,用于在坩埚中产生主要的热梯度的装置,其限定了坩埚中的主要生长方向 源组合物和晶种,用于促进源组合物和晶种之间的蒸气传输,并且晶种位于种子保持器上,其中晶种的宏观生长表面形成约70°至89.5°之间的角度 相对于主要的热梯度和主要的生长方向以及具有晶体的c轴的晶种的晶体取向与主要的热梯度在约0°和2°之间形成一个角度。