专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US06892062B2 Current-reuse bleeding mixer 有权
标题翻译：电流再利用出血混合器
公开(公告)号：US06892062B2
公开(公告)日：2005-05-10
申请号：US09828182
申请日：2001-04-09
申请人： Sang Gug Lee , Jung-Ki Choi , Nam-Soo Kim
发明人： Sang Gug Lee , Jung-Ki Choi , Nam-Soo Kim
IPC分类号： H03D1/00 , H03D7/14 , H04B1/26
CPC分类号： H03D7/1441 , H03D7/1458 , H03D7/1491 , H03D2200/0043
摘要： A current-reusing bleeding mixer capable of providing a higher conversion gain, linearity and lower noise figure employing a field-effect transistor includes a first to a fourth transistor and a first and a second load element. The first transistor amplifies a radio frequency (RF) signal. The second and the third transistor, each connected to the first transistor, receive a balanced local oscillator (LO) signal to mix it with the RF signal. The first and the second load element are connected between a supply voltage source and the second transistor and between the supply voltage source and the third transistor, respectively. The fourth transistor, connected between the supply voltage source and the first transistor, amplifies the RF signal and bleeds a current from the supply voltage source.
摘要翻译：能够使用场效应晶体管提供更高转换增益，线性度和较低噪声系数的电流再利用排出混合器包括第一至第四晶体管和第一和第二负载元件。第一晶体管放大射频（RF）信号。每个连接到第一晶体管的第二和第三晶体管接收平衡本地振荡器（LO）信号以将其与RF信号混合。第一和第二负载元件分别连接在电源电压源和第二晶体管之间，以及电源电压源和第三晶体管之间。连接在电源电压源和第一晶体管之间的第四晶体管放大RF信号并从电源电压源中流出电流。

32. 发明授权

US5809410A Low voltage RF amplifier and mixed with single bias block and method 失效
公开(公告)号：US5809410A
公开(公告)日：1998-09-15
申请号：US90617
申请日：1993-07-12
申请人： Carlton Stuebing , Richard Douglas Schultz , Thomas David Brogan , Sang-Gug Lee
发明人： Carlton Stuebing , Richard Douglas Schultz , Thomas David Brogan , Sang-Gug Lee
IPC分类号： H03D7/14 , H03F1/30 , H03F3/19 , H03F3/45 , H04B1/28
CPC分类号： H03F3/45089 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D7/1491 , H03F1/302 , H03D2200/0025 , H03D2200/0043 , H03F2200/453 , H03F2203/45311 , H03F2203/45374 , H03F2203/45464 , H03F2203/45508 , H03F2203/45544 , H03F2203/45596 , H03F2203/45702
摘要： A single bias block for a single or multiple low voltage RF circuits including one or more amplifiers and one or more single or double balanced mixers with compensation for temperature and integrated circuit process parameters. The power supply may be a lower voltage without sacrificing the dynamic range of the amplifier and/or mixer by applying full power supply voltage to the load with the bias applied to the base circuit through an operational amplifier and/or buffer circuit. For the mixer, a lower noise figure may also be realized by moving the gain control impedance from the emitter to the collector circuit. The circuits may be discrete components or part of an integrated circuit. Methods are disclosed for reducing the power supply voltage without affecting the dynamic range of an amplifier, for temperature and process parameter compensation, and for controlling the gain of a mixer without affecting input or output impedance.

33. 发明授权

US08659323B2 Frequency synthesizer, method of generating output frequency thereof and method of correcting conversion gain thereof 失效
标题翻译：频率合成器，其输出频率的产生方法和校正其变换增益的方法
公开(公告)号：US08659323B2
公开(公告)日：2014-02-25
申请号：US13250037
申请日：2011-09-30
申请人： Sang-Gug Lee , Seungjin Kim
发明人： Sang-Gug Lee , Seungjin Kim
IPC分类号： H03B21/00
CPC分类号： H03L7/1976
摘要： A frequency synthesizer includes: a delta sigma modulator that outputs an input value to a sequentially changing digital value; an analog path unit that converts the digital value to an analog value according to a first conversion gain; an accumulator that accumulates a difference between the input and digital values; a digital to analog converter (DAC) that compensates an output value of the accumulator according to a second conversion gain; a correction loop that extracts analog tendency by adding an output of the analog path unit and an output of the DAC and that extracts digital tendency from an output of the accumulator and adjusts the second conversion gain by comparing the analog and digital tendency; and a voltage control oscillator that generates an output frequency by adding an output of the analog path unit and an output according to an adjusted second conversion gain of the DAC.
摘要翻译：频率合成器包括：ΔΣ调制器，其将输入值输出到顺序变化的数字值; 模拟路径单元，其根据第一转换增益将数字值转换为模拟值; 累加器，其累积输入和数字值之间的差; 数模转换器（DAC），其根据第二转换增益来补偿所述累加器的输出值; 校正循环，通过添加模拟路径单元的输出和DAC的输出来提取模拟趋势，并且从累加器的输出提取数字趋势，并通过比较模拟和数字趋势来调整第二转换增益; 以及电压控制振荡器，其通过将所述模拟路径单元的输出和根据所述DAC的经调整的第二转换增益的输出相加来产生输出频率。

34. 发明申请

US20110150138A1 HIGH LINEARITY MIXER AND DIRECT CONVERSION RECEIVER USING THE SAME 审中-公开
标题翻译：高线性混合器和直接转换接收器
公开(公告)号：US20110150138A1
公开(公告)日：2011-06-23
申请号：US12970899
申请日：2010-12-16
申请人： Jung Woo PARK , Young Jae Lee , Hyun Kyu Yu , Byung Hun Min , Seong Do Kim , Hoai Nam Nguyen , Sang Gug Lee
发明人： Jung Woo PARK , Young Jae Lee , Hyun Kyu Yu , Byung Hun Min , Seong Do Kim , Hoai Nam Nguyen , Sang Gug Lee
IPC分类号： H03K9/00
CPC分类号： H04L25/08 , H03D7/1441 , H03D7/1458 , H03H19/004
摘要： A direct conversion receiver includes: a high linearity mixer device including a sampler unit charge-sampling an input current according to a sampling frequency, and a buffer unit receiving an output signal from the sampler unit while having a low input impedance, amplifying the received signal, and outputting a current signal; and a filter device decimating an output signal from the mixer device and FIR-filtering the decimated signal.
摘要翻译：直接转换接收机包括：高线性混频器装置，包括：采样单元，根据采样频率对输入电流进行采样;以及缓冲单元，其具有低输入阻抗，从采样器单元接收输出信号，放大接收信号，并输出电流信号; 以及滤波器装置对来自混频器装置的输出信号进行抽取，并对抽取的信号进行FIR滤波。

35. 发明授权

US07557657B2 Variable gain amplifier with wide gain variation and wide bandwidth 有权
标题翻译：具有宽增益变化和宽带宽的可变增益放大器
公开(公告)号：US07557657B2
公开(公告)日：2009-07-07
申请号：US11775105
申请日：2007-07-09
申请人： Hoang Duong Quoc , Sang Gug Lee , Jeong Hoon Kim , Tah Joon Park , Eung Ju Kim
发明人： Hoang Duong Quoc , Sang Gug Lee , Jeong Hoon Kim , Tah Joon Park , Eung Ju Kim
IPC分类号： H03F3/45
CPC分类号： H03F3/45188 , H03F3/45632 , H03F2200/447 , H03F2200/456 , H03F2203/45466 , H03F2203/45482 , H03F2203/45641 , H03F2203/45654 , H03F2203/45681 , H03G1/0023
摘要： A variable gain amplifier including: a differential amplification unit amplifying and outputting a difference between a first input signal and a second input signal inputted via a first input terminal and a second input terminal, respectively, according to a first bias current of the first input terminal and second input terminal, to a first output terminal and a second output terminal; a diode-connected load unit comprising loads diode-connected to the first output terminal and second output terminal, respectively, the load receiving a second bias current; and a gain control unit controlling a gain between the input terminals and the output terminals of the differential amplification unit by controlling the size of the first bias current and second bias current.
摘要翻译：一种可变增益放大器，包括：差分放大单元，根据第一输入端子的第一偏置电流，分别放大并输出经由第一输入端子和第二输入端子输入的第一输入信号和第二输入信号之间的差值和第二输入端，连接到第一输出端和第二输出端; 二极管连接的负载单元，分别包括负载二极管连接到第一输出端子和第二输出端子，负载接收第二偏置电流; 以及增益控制单元，通过控制第一偏置电流和第二偏置电流的大小来控制差分放大单元的输入端子和输出端子之间的增益。

36. 发明申请

US20090156158A1 SUPER REGENERATIVE RECEIVER AND METHOD OF SAVING POWER OF THE SAME 有权
标题翻译：超级再生接收器及其保存功率的方法
公开(公告)号：US20090156158A1
公开(公告)日：2009-06-18
申请号：US12333974
申请日：2008-12-12
申请人： Hoyong Kang , Xiaohua Yu , Ji Eun Kim , Trung Kien Nguyen , Dae Young Yoon , Nae Soo Kim , Cheol Sig Pyo , Seok Kyun Han , Sang Gug Lee
发明人： Hoyong Kang , Xiaohua Yu , Ji Eun Kim , Trung Kien Nguyen , Dae Young Yoon , Nae Soo Kim , Cheol Sig Pyo , Seok Kyun Han , Sang Gug Lee
IPC分类号： H04B1/16
CPC分类号： H04B1/24 , H04W52/0225 , Y02D70/166 , Y02D70/40
摘要： A low power super regenerative receiver and a method of reducing the power consumption of the low power super regenerative receiver are provided. The super regenerative receiver includes: an oscillator having a start-up time period starting oscillation that varies according to an existence of an input signal; and a power controller supplying power within the start-up time period of the oscillator.
摘要翻译：提供了一种低功率超再生接收机和降低低功率超再生接收机的功耗的方法。超再生接收机包括：振荡器，具有根据输入信号的存在而变化的启动时间段开始振荡; 以及在振荡器的启动时间段内供电的功率控制器。

37. 发明申请

US20080142945A1 SEMICONDUCTOR PACKAGE WITH REDISTRIBUTION LAYER OF SEMICONDUCTOR CHIP DIRECTLY CONTACTED WITH SUBSTRATE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有与衬底直接接触的半导体芯片的重新分配层的半导体封装及其制造方法
公开(公告)号：US20080142945A1
公开(公告)日：2008-06-19
申请号：US11960473
申请日：2007-12-19
申请人： Seung-Weon HA , Sang-Gug LEE , Ho-Tae Jin , Doo-Ho KANG
发明人： Seung-Weon HA , Sang-Gug LEE , Ho-Tae Jin , Doo-Ho KANG
IPC分类号： H01L23/02
CPC分类号： H01L23/13 , H01L21/6836 , H01L21/76898 , H01L23/481 , H01L23/5389 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/82 , H01L25/0657 , H01L25/50 , H01L2221/68359 , H01L2221/68368 , H01L2221/68381 , H01L2224/02371 , H01L2224/04105 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05548 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/12105 , H01L2224/13099 , H01L2224/131 , H01L2224/16 , H01L2224/32225 , H01L2224/73267 , H01L2224/9222 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06551 , H01L2924/0001 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/18162 , H01L2924/18165 , H01L2924/00014 , H01L2924/01028 , H01L2924/013
摘要： Provided are a semiconductor package in which wiring layers connected to a semiconductor chip electrically contact circuit patterns of a substrate and a method of manufacturing the same. The semiconductor package includes the substrate and the semiconductor chip. The substrate includes a first concave portion disposed on the upper surface thereof and a plurality of the circuit patterns disposed adjacent to the first concave portion. The semiconductor chip is mounted in the substrate to correspond to the concave portion. The semiconductor chip comprises a wafer, pads disposed on the wafer, and wiring layers disposed on the upper surface and on one side surface of the wafer, wherein first portions disposed on the upper surface of the wafer are connected to the pads and second portions disposed on the one side surface of the wafer contact the circuit patterns of the substrate.
摘要翻译：提供一种半导体封装，其中连接到半导体芯片的布线层与基板的电接触电路图案及其制造方法。半导体封装包括衬底和半导体芯片。基板包括设置在其上表面上的第一凹部和邻近第一凹部设置的多个电路图案。半导体芯片安装在基板中以对应于凹部。半导体芯片包括晶片，设置在晶片上的焊盘以及设置在晶片的上表面和一个侧表面上的布线层，其中设置在晶片的上表面上的第一部分连接到焊盘，第二部分设置在晶片的一个侧表面上接触衬底的电路图案。

38. 发明授权

US07304548B2 Differential voltage controlled oscillator using complementary transistors cross-coupled in series, and transceiver using the same 有权
标题翻译：差分压控振荡器使用互补晶体管串联耦合，收发器使用相同
公开(公告)号：US07304548B2
公开(公告)日：2007-12-04
申请号：US11142434
申请日：2005-06-01
申请人： Sang Gug Lee , So Bong Shin , Seok Ju Yun
发明人： Sang Gug Lee , So Bong Shin , Seok Ju Yun
IPC分类号： H03B5/12
CPC分类号： H03B5/1228 , H03B5/1212 , H03B5/1243 , H03D7/165
摘要： A differential voltage controlled oscillator comprises first and second transistors having opposite magnitudes and directions of currents flowing to a third electrode from a second electrode corresponding to a voltage between first and second electrodes; and a resonance circuit coupled to the second electrodes of the first and second transistors and controlling a frequency of an oscillation signal corresponding to a control voltage. The second electrode of the first transistor is coupled to the first electrode of the second transistor to form a first output terminal, the first electrode of the first transistor is coupled to the second electrode of the second transistor to form a second output terminal, and the third electrodes of the first and second transistors are coupled to first and second powers.
摘要翻译：差分压控振荡器包括第一和第二晶体管，其具有与第一和第二电极之间的电压相对应的从第二电极流向第三电极的电流的相反大小和方向; 以及耦合到第一和第二晶体管的第二电极的谐振电路，并且控制与控制电压对应的振荡信号的频率。第一晶体管的第二电极耦合到第二晶体管的第一电极以形成第一输出端，第一晶体管的第一电极耦合到第二晶体管的第二电极，以形成第二输出端，并且第一和第二晶体管的第三电极耦合到第一和第二功率。

39. 发明申请

US20070173218A1 Offset local oscillator without using frequency divider 有权
标题翻译：偏移本地振荡器而不使用分频器
公开(公告)号：US20070173218A1
公开(公告)日：2007-07-26
申请号：US11409886
申请日：2006-04-24
申请人： Nam-Jin Oh , Sang-Gug Lee
发明人： Nam-Jin Oh , Sang-Gug Lee
IPC分类号： H04B7/00
CPC分类号： H03B27/00 , H03B5/1215 , H03B5/1228 , H03B5/1243
摘要： A local oscillator without a frequency divider is provided. The local oscillator includes a quadrature voltage controlled oscillator generating I and Q signals having a frequency which is one-third of a local oscillation frequency, and a differential second-harmonic signal having a frequency which is two-thirds of the local oscillation frequency, a poly-phase filter converting the differential second-harmonic signal input from the quadrature voltage controlled oscillator into I and Q signals, and a single side band (SSB) mixer receiving the I and Q signals having the frequency which is one-third of the local oscillation frequency from the quadrature voltage controlled oscillator as an input and receiving the I and Q signals having the frequency which is two-thirds of the local oscillation frequency from the poly-phase filter as an input, and outputting the I and Q signals having the local oscillation frequency.
摘要翻译：提供了没有分频器的本地振荡器。本地振荡器包括正交压控振荡器，其生成具有本地振荡频率的三分之一的频率的I和Q信号，以及具有作为本地振荡频率的三分之二的频率的差分二次谐波信号，将从正交压控振荡器输入的差分二次谐波信号转换为I和Q信号的多相滤波器以及接收具有本地的三分之一频率的I和Q信号的单边带（SSB）混频器振荡频率作为输入，从作为输入的多相滤波器接收具有作为本地振荡频率的三分之二的频率的I和Q信号，并输出具有本地振荡频率。

40. 发明授权

US07145409B2 Low power quadrature voltage controlled oscillator using back gate 失效
标题翻译：低功率正交压控振荡器采用后门
公开(公告)号：US07145409B2
公开(公告)日：2006-12-05
申请号：US10925669
申请日：2004-08-25
申请人： Sang Gug Lee , Hye Ryoung Kim
发明人： Sang Gug Lee , Hye Ryoung Kim
IPC分类号： H03H5/12
CPC分类号： H03K3/354 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B2201/0208
摘要： Disclosed is a quadrature VCO (voltage controlled oscillator) which comprises a first delay cell including a first switching transistor and a second switching transistor, the first delay cell outputting first and second in-phase signals with different phases; and a second delay cell including a third switching transistor and a fourth switching transistor, the second delay cell outputting first and second quadrature-phase signals with different phases. The first and second quadrature-phase signals are applied to back gates of the first and second switching transistors, and the first and second in-phase signals are applied to back gates of the fourth and third switching transistors.
摘要翻译：公开了一种正交VCO（压控振荡器），其包括具有第一开关晶体管和第二开关晶体管的第一延迟单元，所述第一延迟单元以不同相位输出第一和第二同相信号; 以及包括第三开关晶体管和第四开关晶体管的第二延迟单元，所述第二延迟单元输出具有不同相位的第一和第二正交相位信号。第一和第二正交相位信号被施加到第一和第二开关晶体管的后栅极，并且第一和第二同相信号被施加到第四和第三开关晶体管的后栅极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式