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31. 发明申请

US20130128259A1 RANGE SENSOR AND RANGE IMAGE SENSOR 有权
标题翻译：范围传感器和范围图像传感器
公开(公告)号：US20130128259A1
公开(公告)日：2013-05-23
申请号：US13813752
申请日：2011-06-16
申请人： Mitsuhito Mase , Takashi Suzuki
发明人： Mitsuhito Mase , Takashi Suzuki
IPC分类号： G01C3/00 , G01C3/08
CPC分类号： G01C3/00 , G01S7/4816 , G01S7/4861 , G01S17/89 , H01L27/14614
摘要： A photogate electrode has a planar shape of a rectangular shape having first and second long sides opposed to each other and first and second short sides opposed to each other. First and second semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second long sides are opposed. Third semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second short sides are opposed. The third semiconductor regions make a potential on the sides of the first and second short sides higher than a potential in a region located between the first and second semiconductor regions in a region immediately below the photogate electrode.
摘要翻译：光栅电极具有矩形形状的平面形状，其具有彼此相对的第一和第二长边以及彼此相对的第一和第二短边。第一和第二半导体区域彼此相对布置，其中光栅电极在第一和第二长边相对的方向之间。第三半导体区域彼此相对布置，光栅电极在第一和第二短边相对的方向之间。第三半导体区域使第一和第二短边的电位高于位于光栅电极正下方的区域中位于第一和第二半导体区域之间的电位。

32. 发明申请

US20130120735A1 RANGE SENSOR AND RANGE IMAGE SENSOR 有权
标题翻译：范围传感器和范围图像传感器
公开(公告)号：US20130120735A1
公开(公告)日：2013-05-16
申请号：US13810519
申请日：2011-06-16
申请人： Mitsuhito Mase , Takashi Suzuki
发明人： Mitsuhito Mase , Takashi Suzuki
IPC分类号： G01C3/02
CPC分类号： G01S17/89 , G01S7/4863
摘要： A light receiving region has a planar shape of a rectangular shape having a pair of long sides opposed to each other in a first direction and a pair of short sides opposed to each other in a second direction. First and second semiconductor regions are arranged as spatially separated from each other along the respective long sides. First and second gate electrodes are arranged each between the corresponding semiconductor region and the light receiving region. Third gate electrodes are arranged as spatially separated from each other between the first and second gate electrodes arranged along the long sides. Each of the third gate electrodes has a first electrode portion located between a third semiconductor region and the light receiving region, and a second electrode portion overlapping with the light receiving region and having a width in the second direction smaller than that of the first electrode portion.
摘要翻译：光接收区域具有矩形形状的平面形状，其具有在第一方向上彼此相对的一对长边和在第二方向上彼此相对的一对短边。第一半导体区域和第二半导体区域沿着相应的长边方向彼此空间地布置。第一和第二栅电极分别布置在对应的半导体区域和光接收区域之间。在沿长边布置的第一和第二栅电极之间，第三栅极电极彼此空间上分开布置。每个第三栅极具有位于第三半导体区域和光接收区域之间的第一电极部分和与光接收区域重叠并且具有比第一电极部分的宽度小的第二方向的第二电极部分。

33. 发明申请

US20120312966A1 RANGE IMAGE SENSOR 有权
标题翻译：范围图像传感器
公开(公告)号：US20120312966A1
公开(公告)日：2012-12-13
申请号：US13578048
申请日：2011-02-23
申请人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
发明人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译：由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得更准确的范围图像。

34. 发明申请

US20120307231A1 BACK-ILLUMINATED DISTANCE MEASURING SENSOR AND DISTANCE MEASURING DEVICE 有权
标题翻译：后置照明距离测量传感器和距离测量装置
公开(公告)号：US20120307231A1
公开(公告)日：2012-12-06
申请号：US13585103
申请日：2012-08-14
申请人： Mitsuhito MASE , Takashi Suzuki , Seiichiro Mizuno , Mitsutaka Takemura
发明人： Mitsuhito MASE , Takashi Suzuki , Seiichiro Mizuno , Mitsutaka Takemura
IPC分类号： G01C3/08 , H01L31/113
CPC分类号： H01L27/1464 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L2224/05001 , H01L2224/05124 , H01L2224/05568 , H01L2224/0557 , H01L2224/05624 , H01L2224/16225 , H01L2924/00014
摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
摘要翻译：作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确距离测量启用。

35. 发明申请

US20120181650A1 RANGE SENSOR AND RANGE IMAGE SENSOR 有权
标题翻译：范围传感器和范围图像传感器
公开(公告)号：US20120181650A1
公开(公告)日：2012-07-19
申请号：US13498202
申请日：2010-11-18
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

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