会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明授权
    • Pulse wave measuring apparatus
    • 脉搏波测量仪
    • US07195597B2
    • 2007-03-27
    • US10751112
    • 2004-01-05
    • Masao HashimotoKazunobu Itonaga
    • Masao HashimotoKazunobu Itonaga
    • A61B5/00
    • A61B5/021
    • Provided is a pulse wave measuring apparatus preventing breakage of a pressure sensing surface in the non-measurement stage. The pulse wave measuring apparatus includes: a housing and a pressure sensing section, wherein an opening is formed at the bottom surface of the housing, the pressure sensing section is mounted inside of the housing, the pressure sensing section moves freely upwardly and downwardly through the opening between a measuring position at which a pressure sensing surface is pressed to a human body to measure a pulse wave and a waiting position at which the pressure sensing section 20 is accommodated inside of the housing to be on standby and the housing has a slide cover protecting the pressure sensing surface in a state where the pressure sensing section is located at the waiting position.
    • 提供了一种防止非测量级中的压力感测表面破裂的脉搏波测量装置。 脉搏波测量装置包括:壳体和压力感测部分,其中在壳体的底表面处形成有开口,压力感测部分安装在壳体内部,压力感测部分自由地向上和向下移动穿过壳体 在压力检测表面被按压到人体以测量脉搏波的测量位置和压力​​感测部分20容纳在待机状态的等待位置之间的开口,并且壳体具有滑盖 在压力感测部位于等待位置的状态下保护压力感测面。
    • 33. 发明授权
    • Apparatus and method for detecting pulse wave
    • 脉搏波检测装置及方法
    • US07144373B2
    • 2006-12-05
    • US10753076
    • 2004-01-08
    • Hironori SatoTomoki KitawakiMasao Hashimoto
    • Hironori SatoTomoki KitawakiMasao Hashimoto
    • A61B5/00
    • A61B5/6843A61B5/02A61B5/6824A61B2562/0247A61B2562/043
    • Provided are an apparatus and method of detecting a pulse wave at the certain position of an artery. A pressure sensor array has a pressurization surface on which plural pressure sensors are disposed in a direction intersecting with an artery. The pressurization surface, when a pulse wave is detected, is pressed against a surface of a living human body by a cuff pressure in a pressurization cuff. CPU, when a pulse wave is detected, inputs voltage signals indicating pressure information from the plural pressure sensors simultaneously along with the time axis. CPU extracts the DC component indicating a pressure component caused by a hard member from a voltage signal to specify the pressure sensor located above the hard member from the extracted DC component. The pressure sensors left after the specified pressure sensor located above the hard member among the plural pressure sensors are selected as candidates of the pressure sensor located above the artery to detect a pulse wave generated in the artery based on pressure information outputted from the selected pressure sensors.
    • 提供了一种在动脉的某个位置检测脉搏波的装置和方法。 压力传感器阵列具有多个压力传感器在与动脉相交的方向上设置的加压表面。 当检测到脉搏波时,加压表面通过加压袖带中的袖带压力被压在活体的表面上。 CPU,当检测到脉搏波时,与时间轴同时输入表示来自多个压力传感器的压力信息的电压信号。 CPU从电压信号中提取指示由硬构件引起的压力分量的DC分量,以从提取的DC分量指定位于硬构件上方的压力传感器。 选择位于多个压力传感器中的位于硬质构件上方的指定压力传感器之后的压力传感器作为位于动脉上方的压力传感器的候选物,以基于从所选择的压力传感器输出的压力信息检测在动脉中产生的脉搏波 。
    • 34. 发明授权
    • Process for producing high purity silicon carbide powder for preparation
of a silicon carbide single crystal and single crystal
    • 生产用于制备碳化硅单晶和单晶的高纯度碳化硅粉末的方法
    • US5863325A
    • 1999-01-26
    • US534847
    • 1995-09-27
    • Masashi KanemotoShinobu EndoMasao Hashimoto
    • Masashi KanemotoShinobu EndoMasao Hashimoto
    • C01B31/36C30B23/00C30B29/36
    • C01B31/36C30B23/00C30B29/36C01P2004/61C01P2006/80
    • A process for producing high purity silicon carbide uses a high purity tetraethoxysilane or the like as the silicon source and a novolak-type phenol resin or the like as the carbon source. The process comprises a step of forming silicon carbide in which silicon carbide powder is prepared by calcining a mixture of these sources in a non-oxidizing atmosphere, and a step of post-treating silicon carbide in which the silicon carbide powder thus obtained is treated by heating at a temperature of 2000.degree. to 2100.degree. C. for 5 to 20 minutes at least once while the silicon carbide powder is kept at a temperature of 1700.degree. or higher to lower than 2000.degree. C., to obtain silicon carbide powder having an average particle diameter of 10 to 500 .mu.m and a content of impurity elements of 0.5 ppm or less. The high purity silicon carbide powder is advantageously used as a material for producing an excellent silicon carbide single crystal having a decreased number of crystal defects.
    • 高纯度碳化硅的制造方法使用高纯度四乙氧基硅烷等作为硅源,酚醛清漆型酚醛树脂等作为碳源。 该方法包括形成碳化硅的步骤,其中通过在非氧化性气氛中煅烧这些源的混合物制备碳化硅粉末,以及后处理碳化硅的步骤,其中由此获得的碳化硅粉末经过 在2000℃〜2100℃的温度下加热5〜20分钟至少一次,同时将碳化硅粉末保持在1700℃以上且低于2000℃的温度,得到具有 平均粒径为10〜500μm,杂质含量为0.5ppm以下。 高纯度碳化硅粉末有利地用作生产具有减少的晶体缺陷数量的优异的碳化硅单晶的材料。
    • 35. 发明授权
    • Atomic absorption spectrophotometer
    • 原子吸收分光光度计
    • US4728189A
    • 1988-03-01
    • US6170
    • 1987-01-23
    • Konosuke OishiKoichi UchinoHideo YamadaSeigo KamitakeMasao Hashimoto
    • Konosuke OishiKoichi UchinoHideo YamadaSeigo KamitakeMasao Hashimoto
    • G01N21/31G01J3/42G01N21/74
    • G01N21/3103
    • An absorption profile indicative of a relation in atomic absorption spectroscopy between the absorbance of a desired element and time has a constant half-width independent of the concentration of the desired element in a sample, and hence the half-width of absorption profile with respect to the desired element can be previously determined from data which is obtained by the measurement of a standard sample. In an atomic absorption spectrophotometer herein disclosed, the half-width of absorption profile is previously determined in the above-mentioned manner, and the true peak value of an absorption profile obtained by measuring a sample which contains the desired element at a high concentration, is calculated using the time width of this absorption profile at a predetermined absorbance and the previously-determined half-width.
    • 指示所需元素的吸光度与时间之间的原子吸收光谱中的关系的吸收曲线具有与样品中期望元素的浓度无关的恒定半宽,因此吸收曲线的半宽相对于 可以从通过测量标准样品获得的数据预先确定所需要的元素。 在本文公开的原子吸收分光光度计中,预先按照上述方式确定吸收曲线的半宽度,通过以高浓度测量含有所需元素的样品而获得的吸收曲线的真实峰值为 使用该吸收曲线的时间宽度以预定吸光度和预先确定的半宽度计算。