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31. 发明授权

US07605147B2 Acyclic nucleoside phosphonate derivatives, salts thereof and process for the preparation of the same 失效
标题翻译：无环核苷膦酸衍生物，其盐及其制备方法
公开(公告)号：US07605147B2
公开(公告)日：2009-10-20
申请号：US11455679
申请日：2006-06-20
申请人： Dong-Gyu Cho , Jae-Hong Lim , Jae-Taeg Hwang , Woo-Young Cho , Hyun-Sook Jang , Chang-Ho Lee , Tae-Saeng Choi , Chung-Mi Kim , Yong-Zu Kim , Tae-Kyun Kim , Seung-Joo Cho , Gyoung-Won Kim , Jong-Ryoo Choi , Jeong-Min Kim , Kee-Yoon Roh
发明人： Dong-Gyu Cho , Jae-Hong Lim , Jae-Taeg Hwang , Woo-Young Cho , Hyun-Sook Jang , Chang-Ho Lee , Tae-Saeng Choi , Chung-Mi Kim , Yong-Zu Kim , Tae-Kyun Kim , Seung-Joo Cho , Gyoung-Won Kim , Jong-Ryoo Choi , Jeong-Min Kim , Kee-Yoon Roh
IPC分类号： C07F9/6561 , A61K31/675 , A61P31/20 , C07F9/6512 , C07F9/40 , C07F7/18
CPC分类号： C07H19/10 , C07F9/65616 , C07H19/20
摘要： The present invention relates to an acyclic nucleoside phosphonate derivative represented by the following formula (1): in which represents single bond or double bond, R1, R2, R3, R7 and R8 are defined herein, Y represents —O—, —S—, —CH(Z)-, ═C(Z)-, —N(Z)-, ═N—, or —SiH(Z)-, wherein Z represents hydrogen, hydroxy or halogen, or represents C1-C7-alkyl, C1-C5-alkoxy, allyl, hydroxy-C1-C7-alkyl, C1-C7-aminoalkyl or phenyl, Q represents a group having the following formula: wherein X1, and X2 independently of one another represent hydrogen, amino, hydroxy or halogen, or represent C1-C7-alkyl, C1-C5-alkoxy, allyl, hydroxy-C1-C7-alkyl, phenyl or phenoxy each of which is optionally substituted by nitro or C1-C5-alkoxy, or represent C6-C10-arylthio which is optionally substituted by nitro, amino, C1-C6-alkyl or C1-C4-alkoxy, or represent C6-C12-arylamino, C1-C7-alkylamino, di(C1-C7-alkyl)amino, C3-C6-cycloalkylamino or a structure of wherein n denotes an integer of 1 or 2 and Y1 represents O, CH2 or N—R (R represents C1-C7-alkyl or C6-C12-aryl), which is useful as an antiviral agent (particularly, against hepatitis B virus), pharmaceutically acceptable salts, stereoisomers, and a process for the preparation thereof.
摘要翻译：本发明涉及由下式（1）表示的无环核苷膦酸酯衍生物：其中表示单键或双键，R1，R2，R3，R7和R8如本文所定义，Y表示 - O，-S - ， - CH（Z） - ， - C（Z） - ， - N（Z） - ， - -N-或-SiH（Z） - ，其中Z表示氢，羟基或卤素，或表示C 1 -C 7 - 烷基，C 1 -C 5 - 烷氧基，烯丙基，羟基-C 1 -C 7 - 烷基，C 1 -C 7 - 氨基烷基或苯基，Q表示具有下式的基团：其中X 1和X 2彼此独立地表示氢，氨基，羟基或卤素，或表示任选被硝基或C 1 -C 5烷氧基取代的C 1 -C 7 - 烷基，C 1 -C 5 - 烷氧基，烯丙基，羟基-C 1 -C 7 - 烷基，苯基或苯氧基，或表示任选被硝基，氨基，C 1 -C 6 - 烷基或C 1 -C 4 - 烷氧基取代的C 6 -C 10 - 芳硫基，或代表 C 1 -C 12 - 芳基氨基，C 1 -C 7 - 烷基氨基，二（C 1 -C 7 - 烷基）氨基，C 3 -C 6环烷基氨基或其中n表示1或2的整数，Y 1表示O，CH 2或NR（ R表示可用作抗病毒剂（特别是针对乙型肝炎病毒）的药学上可接受的盐，立体异构体及其制备方法的C 1 -C 7 - 烷基或C 6 -C 12 - 芳基）。

32. 发明申请

US20090250818A1 VIA ELECTROMIGRATION IMPROVEMENT BY CHANGING THE VIA BOTTOM GEOMETRIC PROFILE 有权
标题翻译：通过改变通过底部几何轮廓的电力改进
公开(公告)号：US20090250818A1
公开(公告)日：2009-10-08
申请号：US12486521
申请日：2009-06-17
申请人： Bei Chao Zhang , Chun Hui Low , Hong Lim Lee , Sang Yee Loong , Qiang Guo
发明人： Bei Chao Zhang , Chun Hui Low , Hong Lim Lee , Sang Yee Loong , Qiang Guo
IPC分类号： H01L23/522
CPC分类号： H01L21/76802 , H01L21/76805 , H01L21/76814
摘要： An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.
摘要翻译：描述了一种用于提高半导体器件中的电迁移阻力的集成方法。在包括上电介质层，中间TiN ARC和下第一金属层的堆叠中形成通孔，并且填充有共形扩散阻挡层和第二金属层。一个关键特征是可以选择蚀刻工艺来改变通孔底部的形状和位置。在第一金属层中形成圆形或部分圆形的底部，以减小扩散阻挡层附近的机械应力。另一方面，当第一金属层暴露于后续处理步骤时，选择在TiN ARC上或其中停止的平底，这是首要考虑的问题。发现耐电迁移性低于在第一金属层中形成的平坦底部的通孔结构。

33. 发明授权

US07414068B2 Benzopyran derivatives substituted with secondary amines including tetrazole, method for the preparation thereof and pharmaceutical compositions containing them 失效
标题翻译：用包括四唑的仲胺取代的苯并吡喃衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US07414068B2
公开(公告)日：2008-08-19
申请号：US10510835
申请日：2003-04-10
申请人： Hong Lim , Dong-Ha Lee , Sun-Ok Kim , In-Young Choi , Sung-Eun Yoo , Kyu-Yang Yi , Sun-Kyung Lee , Jee-Hee Suh , Nak-Jeong Kim , Byung-Ho Lee , Ho-Won Seo , Hwa-Sup Shin
发明人： Hong Lim , Dong-Ha Lee , Sun-Ok Kim , In-Young Choi , Sung-Eun Yoo , Kyu-Yang Yi , Sun-Kyung Lee , Jee-Hee Suh , Nak-Jeong Kim , Byung-Ho Lee , Ho-Won Seo , Hwa-Sup Shin
IPC分类号： A61K31/41 , C07D257/04
CPC分类号： C07D405/12
摘要： The present invention relates to benzopyran derivatives substituted with secondary amines including tetrazole, method for preparing thereof and pharmaceutical compositions containing them. The compounds of the present invention can be used for protecting neuronal cells and brain damage; antioxidation; inhibiting NO generation; protecting heart; suppressing angiogenesis; protecting preserving organs such as kidney, heart and tissue, and protecting organs in major cardiovascular surgery.
摘要翻译：本发明涉及用包括四唑的仲胺取代的苯并吡喃衍生物，其制备方法和含有它们的药物组合物。本发明的化合物可用于保护神经细胞和脑损伤; 抗氧化; 抑制NO产生; 保护心脏抑制血管发生; 保护肾脏，心脏和组织等保护器官，并在主要心血管手术中保护器官。

34. 发明授权

US07312493B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US07312493B2
公开(公告)日：2007-12-25
申请号：US11607328
申请日：2006-11-30
申请人： Tae-Hong Lim
发明人： Tae-Hong Lim
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/78642 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device having a vertical gate and method of manufacturing the same are disclosed. An example semiconductor device includes a pair of first source/drain regions formed apart from each other by a predetermined distance on a silicon substrate, a first silicon epitaxial layer formed on the pair of first source/drain regions, a vertical gate insulation layer formed at both sidewalls of the first silicon epitaxial layer, and a second silicon epitaxial layers formed on the first silicon epitaxial layer and on the gate insulation layer. The example device includes a pair of second source/drain regions formed in the second silicon epitaxial layer formed on the first silicon epitaxial layer, at positions above the pair of first source/drain regions, and a plurality of vertical gates respectively connected to the second silicon epitaxial layer formed on the gate insulation layer and to the pair of second source/drain regions.

35. 发明申请

US20070244592A1 MANUFACTURING SYSTEM WITH ACTIVE FAILOVER 审中-公开
标题翻译：具有主动故障的制造系统
公开(公告)号：US20070244592A1
公开(公告)日：2007-10-18
申请号：US11736255
申请日：2007-04-17
申请人： Mohd Azizi Chik , Tin Tin Ung , Thangappan Krisnamuthi , Kian Wee Lim , Lip Hong Lim , Brandon Lee
发明人： Mohd Azizi Chik , Tin Tin Ung , Thangappan Krisnamuthi , Kian Wee Lim , Lip Hong Lim , Brandon Lee
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/31372 , G05B2219/32055 , G05B2219/32269 , G05B2219/45031 , Y02P90/10 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20
摘要： A manufacturing system includes an event trigger to a primary server and a schedule server, forming a control job by the primary server and the schedule server, checks status (such as an end value trigger) of the primary server with a delay by the schedule server, and validating the status of the primary server with a validation process before the schedule server transmits the control job.
摘要翻译：制造系统包括对主服务器和调度服务器的事件触发器，由主服务器和调度服务器形成控制作业，由调度服务器延迟检查主服务器的状态（例如终端值触发器），并在调度服务器发送控制作业之前通过验证过程验证主服务器的状态。

36. 发明授权

US07235411B2 Method for aligning a wafer and apparatus for performing the same 失效
标题翻译：用于对准晶片的方法和用于执行该晶片的装置
公开(公告)号：US07235411B2
公开(公告)日：2007-06-26
申请号：US10883711
申请日：2004-07-06
申请人： Kyu-Hong Lim , Byung-Am Lee , Joo-Woo Kim , Chang-Hoon Lee
发明人： Kyu-Hong Lim , Byung-Am Lee , Joo-Woo Kim , Chang-Hoon Lee
IPC分类号： H01L21/00
CPC分类号： G03F9/7092 , G03F7/70616
摘要： In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.
摘要翻译：在使用能够精确且快速地对准晶片的晶片和使用对准晶片的方法的晶片对准装置的对准方法中，对准第一晶片以形成对应于第一晶片的图像的第一模板图案晶圆。输入第二晶片的图像数据。一种第二晶片与第一晶片不同。通过响应于第二晶片的图像数据变换第一模板图案来形成第二模板图案。然后响应于第二模板图案对准第二晶片。因此，使用图像数据形成模板图案，以对晶片进行对准，尽管检查具有不同图像的晶片，从而快速形成模板图案。

37. 发明申请

US20070102758A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070102758A1
公开(公告)日：2007-05-10
申请号：US11551375
申请日：2006-10-20
申请人： Tae Hong Lim
发明人： Tae Hong Lim
IPC分类号： H01L29/94
CPC分类号： H01L29/66583 , H01L21/28238 , H01L29/4236 , H01L29/66621 , H01L29/7834
摘要： A semiconductor device may include a semiconductor substrate having a recessed surface, a gate insulating layer formed on the recessed surface of the semiconductor substrate, a gate electrode formed on the gate insulating layer, and a source/drain area formed at both sides of the gate electrode, according to embodiments.
摘要翻译：半导体器件可以包括具有凹面的半导体衬底，形成在半导体衬底的凹表面上的栅极绝缘层，形成在栅极绝缘层上的栅极电极和形成在栅极两侧的源极/漏极区域电极。

38. 发明申请

US20060264399A1 Compositions for breast implant filling and methods of use 有权
标题翻译：用于乳房植入物填充的组合物和使用方法
公开(公告)号：US20060264399A1
公开(公告)日：2006-11-23
申请号：US11299644
申请日：2005-12-12
申请人： Tae-Hong Lim , Joon Park , Jin Lee , Seok-Jo Yang , Jaehyun Kim , Jin Cho
发明人： Tae-Hong Lim , Joon Park , Jin Lee , Seok-Jo Yang , Jaehyun Kim , Jin Cho
IPC分类号： A61F2/12 , A61F2/02
CPC分类号： A61L27/52 , A61F2/12 , A61L27/18 , C08L71/02
摘要： The methods and compositions disclosed herein describes a solution containing at least one block co-polymer that is a liquid at lower temperatures and transitions to a gel at higher temperatures. The compositions are useful, for example, as an alternative to saline or silicone-gel as fillers for prostheses.
摘要翻译：本文公开的方法和组合物描述了含有至少一种嵌段共聚物的溶液，其在较低温度下为液体并在较高温度下转变为凝胶。组合物可用作例如作为假体填充剂的盐水或硅凝胶的替代物。

39. 发明申请

US20060096534A1 Apparatus for depositing thin film on wafer 审中-公开
标题翻译：用于在薄片上沉积薄膜的装置
公开(公告)号：US20060096534A1
公开(公告)日：2006-05-11
申请号：US11264993
申请日：2005-11-02
申请人： Hong Lim , Sahng Lee , Tae Seo , Ho Chang
发明人： Hong Lim , Sahng Lee , Tae Seo , Ho Chang
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： A thin film deposition apparatus that can effectively use a chemical source having a high vaporization temperature is provided. The thin film deposition apparatus includes a chamber for depositing a thin film on a wafer, a canister for accommodating a liquid chemical source to be supplied to the chamber, and a vaporizer for vaporizing the liquid chemical source bubbled in the canister and providing the vaporized chemical source to the chamber. The vaporizer is installed on a top surface or lateral surface of the chamber by an adaptor block to be incorporated into the chamber. A first gas line between the vaporizer and the chamber is formed within the adaptor block.
摘要翻译：提供了可以有效地使用具有高蒸发温度的化学源的薄膜沉积装置。薄膜沉积设备包括用于在晶片上沉积薄膜的腔室，用于容纳要供应到腔室的液体化学源的罐，以及用于蒸发鼓泡在罐中的液体化学源并提供蒸发化学物质的蒸发器来源到房间。蒸发器通过适配器块安装在室的顶表面或侧表面上，以装入室中。蒸发器和室之间的第一气体管线形成在适配器块内。

40. 发明申请

US20060093922A1 Composite material tape for lithium secondary battery and lithium secondary battery using the same 审中-公开
标题翻译：锂二次电池复合材料胶带和使用该锂二次电池的锂二次电池
公开(公告)号：US20060093922A1
公开(公告)日：2006-05-04
申请号：US11234841
申请日：2005-09-22
申请人： Cheon Kim , Hong Lim , Sang Lee
发明人： Cheon Kim , Hong Lim , Sang Lee
IPC分类号： H01M2/16 , H01M4/66 , H01M6/10
CPC分类号： H01M2/08 , C08K3/20 , C08K3/28 , C09J7/22 , C09J2205/106 , C09J2423/006 , C09J2467/006 , C09J2471/006 , C09J2479/086 , C09J2481/006 , H01M2/0275 , H01M2/1022 , H01M2/32 , H01M2/34 , H01M10/052 , H01M10/0587 , H01M10/425 , H01M2200/00
摘要： A composite material tape and a lithium secondary battery using the same are provided. The composite material tape includes an organic base and at least one inorganic element dispersed within the organic base. The composite material tapes of the present invention exhibit improved insulative and heat-resistant characteristics.
摘要翻译：提供复合材料带和使用其的锂二次电池。复合材料带包括有机基底和分散在有机基底内的至少一种无机元素。本发明的复合材料带表现出改善的绝缘和耐热特性。

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