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31. 发明授权

US07851372B2 Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same 有权
标题翻译：用于除去绝缘材料的组合物，去除绝缘层的方法和使用其的再循环基板的方法
公开(公告)号：US07851372B2
公开(公告)日：2010-12-14
申请号：US11540604
申请日：2006-10-02
申请人： Dong-Min Kang , Kui-Jong Baek , Woong Hahn , Chun-Deuk Lee , Jung-Hun Lim , Young-Nam Kim , Hyun-Joon Kim
发明人： Dong-Min Kang , Kui-Jong Baek , Woong Hahn , Chun-Deuk Lee , Jung-Hun Lim , Young-Nam Kim , Hyun-Joon Kim
IPC分类号： H01L21/461
CPC分类号： H01L21/31111 , H01L21/02079
摘要： In one aspect, a composition is provided which is capable of removing an insulation material which includes at least one of a low-k material and a passivation material. The composition of this aspect includes about 5 to about 40 percent by weight of a fluorine compound, about 0.01 to about 20 percent by weight of a first oxidizing agent, about 10 to about 50 percent by weight of a second oxidizing agent, and a remaining water.
摘要翻译：在一个方面，提供了能够去除包括低k材料和钝化材料中的至少一种的绝缘材料的组合物。该方面的组成包括约5至约40重量％的氟化合物，约0.01至约20重量％的第一氧化剂，约10至约50重量％的第二氧化剂，以及剩余的水。

32. 发明申请

US20090075463A1 METHOD OF FABRICATING T-GATE 失效
标题翻译：制造T型门的方法
公开(公告)号：US20090075463A1
公开(公告)日：2009-03-19
申请号：US12270016
申请日：2008-11-13
申请人： Jae Yoeb SHIM , Hyung Sup YOON , Dong Min KANG , Ju Yeon HONG , Kyung Ho LEE
发明人： Jae Yoeb SHIM , Hyung Sup YOON , Dong Min KANG , Ju Yeon HONG , Kyung Ho LEE
IPC分类号： H01L21/44
CPC分类号： H01L21/0331 , H01L21/28587
摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
摘要翻译：提供一种制造T型栅极的方法。该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

33. 发明申请

US20080296535A1 Structured catalyst for POX reforming of gasoline for fuel-cell powered vehicles applications and a method of preparing the same 有权
标题翻译：用于燃料电池动力车辆应用的汽油的POX重整的结构催化剂及其制备方法
公开(公告)号：US20080296535A1
公开(公告)日：2008-12-04
申请号：US12219740
申请日：2008-07-28
申请人： Dong Ju Moon , Jong Woo Ryu , Dong Min Kang , Byung Gwon Lee , Byoung Sung Ahn , Sang Deuk Lee
发明人： Dong Ju Moon , Jong Woo Ryu , Dong Min Kang , Byung Gwon Lee , Byoung Sung Ahn , Sang Deuk Lee
IPC分类号： C01B3/40
CPC分类号： H01M8/0612 , B01J21/04 , B01J23/78 , B01J23/85 , B01J23/8872 , B01J35/04 , B01J35/1014 , B01J37/0036 , B01J37/0215 , B01J37/0219 , B01J37/0228 , B01J37/0244 , C01B3/386 , C01B3/40 , C01B2203/0261 , C01B2203/066 , C01B2203/1023 , C01B2203/1041 , C01B2203/1082 , C01B2203/1247 , Y02P20/52
摘要： The present invention relates to a structured catalyst for reforming of gasoline and a method of preparing the same, more particularly to a structured catalyst for reforming of gasoline for fuel-cell powered vehicles prepared by wash-coating the transition metal based reforming catalyst on the surface of the ceramic honeycomb support wash-coated with sub-micron sized alumina or its precursor to sufficiently increase the effective surface area and the performance of the catalyst and a method of preparing the same.
摘要翻译：本发明涉及一种用于汽油重整的结构化催化剂及其制备方法，更具体地涉及一种通过在表面上涂覆过渡金属基重整催化剂制备的用于燃料电池动力车辆的汽油重整用结构催化剂用亚微米级氧化铝或其前体洗涤的陶瓷蜂窝体载体，以充分增加催化剂的有效表面积和性能及其制备方法。

34. 发明申请

US20080045035A1 Etching solution for etching metal layer, etching method using the etching solution, and method of fabricating semiconductor product using the etching solution 审中-公开
标题翻译：用于蚀刻金属层的蚀刻溶液，使用蚀刻溶液的蚀刻方法以及使用该蚀刻溶液制造半导体产品的方法
公开(公告)号：US20080045035A1
公开(公告)日：2008-02-21
申请号：US11783978
申请日：2007-04-13
申请人： Ji-Sung Lee , Dong-Min Kang , Young Nam Kim , Young-Sam Lim , Yun-Deok Kang
发明人： Ji-Sung Lee , Dong-Min Kang , Young Nam Kim , Young-Sam Lim , Yun-Deok Kang
IPC分类号： H01L21/461 , B44C1/22 , C09K13/06
CPC分类号： H01L21/32134 , C09K13/06 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0361 , H01L2224/03901 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05572 , H01L2224/05582 , H01L2224/05644 , H01L2224/1147 , H01L2224/13005 , H01L2224/13099 , H01L2224/13144 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014 , H01L2224/05552
摘要： A metal etching solution may include nitric acid, hydrochloric acid, organic acid and water. A semiconductor product fabricating method may include forming a seed layer on a substrate with a metal pad, forming a sacrificial layer that may have an opening exposing the seed layer on the substrate with the seed layer, forming a gold bump that may fill the opening of the sacrificial layer by performing gold electroplating, removing the sacrificial layer, and etching the seed layer exposed by the gold bump, using an etching solution that may include nitric acid, hydrochloric acid, organic acid and water.
摘要翻译：金属蚀刻溶液可以包括硝酸，盐酸，有机酸和水。半导体产品制造方法可以包括用金属焊盘在衬底上形成晶种层，形成牺牲层，牺牲层可以具有使种子层暴露在衬底上的种子层的开口，形成可以填充使用可以包括硝酸，盐酸，有机酸和水的蚀刻溶液进行金电镀，去除牺牲层和蚀刻由金凸块暴露的种子层的牺牲层。

35. 发明申请

US20070082497A1 Composition for removing an insulation material and related methods 有权
标题翻译：去除绝缘材料的组成和相关方法
公开(公告)号：US20070082497A1
公开(公告)日：2007-04-12
申请号：US11500434
申请日：2006-08-08
申请人： Chun-Deuk Lee , Jung-Jea Myung , Myun-Kyu Park , Dong-Min Kang , Byoung-Woo Son , Masayuki Takashima , Young-Nam Kim , Hyun-Joon Kim
发明人： Chun-Deuk Lee , Jung-Jea Myung , Myun-Kyu Park , Dong-Min Kang , Byoung-Woo Son , Masayuki Takashima , Young-Nam Kim , Hyun-Joon Kim
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31111 , H01L21/02079
摘要： A composition for removing an insulation material and related methods of use are disclosed. The composition comprises about 1 to 50 percent by weight of an oxidizing agent, about 0.1 to 35 percent by weight of a fluorine-containing compound, and water. The insulation material comprises at least one of a low-k material and a protection material.
摘要翻译：公开了一种用于除去绝缘材料的组合物和相关使用方法。该组合物包含约1-50重量％的氧化剂，约0.1-35重量％的含氟化合物和水。绝缘材料包括低k材料和保护材料中的至少一种。

36. 发明授权

US06940354B2 Microwave power amplifier 有权
标题翻译：微波功率放大器
公开(公告)号：US06940354B2
公开(公告)日：2005-09-06
申请号：US10735037
申请日：2003-12-11
申请人： Dong Min Kang , Hyung Sup Yoon , Hea Cheon Kim , Kyoung Ik Cho
发明人： Dong Min Kang , Hyung Sup Yoon , Hea Cheon Kim , Kyoung Ik Cho
IPC分类号： H03F3/189 , H03F3/60 , H03F3/68 , H03F3/191
CPC分类号： H03F3/605
摘要： A microwave power amplifier comprising a drive amplifying stage includes power elements, gate and drain bias circuits of the power elements, a RC parallel circuit connected between input port and gates of said power elements, a shunt resistor connected between ground terminal and said gates of power elements, and a negative feedback circuit connected in series with resistors and capacitors and in parallel with the power elements. An interstage matching circuit is connected in series with the drive amplifying stage; and a power amplifying stage including power elements connected in parallel with a power divider and a power coupler, gate and drain bias circuits of said power elements, a RC parallel circuit connected between the gates of power elements and the interstage matching circuit, and a shunt resistor connected between a ground and the gates of power elements.
摘要翻译：包括驱动放大级的微波功率放大器包括功率元件，功率元件的栅极和漏极偏置电路，连接在所述功率元件的输入端口和栅极之间的RC并联电路，连接在接地端子和所述功率门之间的分流电阻器元件和与电阻器和电容器串联连接并与功率元件并联的负反馈电路。级间匹配电路与驱动放大级串联; 以及功率放大级，包括与功率分配器和功率耦合器并联连接的功率元件，所述功率元件的栅极和漏极偏置电路，连接在功率元件的栅极和级间匹配电路之间的RC并联电路，以及分流器电阻连接在地和功率元件的门之间。

37. 发明申请

US20180138418A1 COMPOSITION FOR AN ORGANIC OPTOELECTRIC DEVICE 审中-公开
公开(公告)号：US20180138418A1
公开(公告)日：2018-05-17
申请号：US15870229
申请日：2018-01-12
申请人： Soo-Hyun MIN , Gi-Wook KANG , Dong-Min KANG , Eui-Su KANG , Youn-Hwan KIM , Yong-Tak YANG , Jae-Jin OH , Nam-Heon LEE , Jin-Hyun LUI , Eun-Sun YU , Ho-Kuk JUNG , Young-Kyoung JO
发明人： Soo-Hyun MIN , Gi-Wook KANG , Dong-Min KANG , Eui-Su KANG , Youn-Hwan KIM , Yong-Tak YANG , Jae-Jin OH , Nam-Heon LEE , Jin-Hyun LUI , Eun-Sun YU , Ho-Kuk JUNG , Young-Kyoung JO
IPC分类号： H01L51/00 , C07D405/04 , C07D409/04 , C07D487/04 , C09K11/06 , C07D209/86 , H01L51/50
CPC分类号： H01L51/0054 , C07D209/86 , C07D405/04 , C07D409/04 , C07D487/04 , C09K11/06 , C09K2211/1007 , C09K2211/1029 , C09K2211/185 , H01L51/0052 , H01L51/0067 , H01L51/0072 , H01L51/0073 , H01L51/5016 , H01L2251/5384
摘要： A composition includes a first host compound including moieties represented by Chemical Formulae 1 to 3 that are sequentially bonded with each other, and a second host compound including at least one carbazole group with a substituent having hole characteristics,

38. 发明授权

US09543528B2 Compound for an organic optoelectric device, organic optoelectric device including the same, and display device including the optoelectric device 有权
标题翻译：有机光电器件用复合物，包含该有机光电器件的有机光电器件以及包括该光电器件的显示器件
公开(公告)号：US09543528B2
公开(公告)日：2017-01-10
申请号：US14283935
申请日：2014-05-21
申请人： Dong-Kyu Ryu , Jin-Seok Hong , Eun-Sun Yu , Dong-Min Kang , Sang-Shin Lee , Han-Ill Lee , Yu-Na Jang , Soo-Young Jeong , Su-Jin Han
发明人： Dong-Kyu Ryu , Jin-Seok Hong , Eun-Sun Yu , Dong-Min Kang , Sang-Shin Lee , Han-Ill Lee , Yu-Na Jang , Soo-Young Jeong , Su-Jin Han
IPC分类号： H01L51/50 , H01L27/32 , H01L51/00 , C09K11/06
CPC分类号： H01L51/0067 , C09K11/06 , H01L51/0071 , H01L51/0072 , H01L51/5016 , H01L51/5056 , H01L51/5072
摘要： A compound for an organic optoelectric device, an organic optoelectric device including the same, and a display device including the organic optoelectric device, the compound including a combination of a moiety represented by the following Chemical Formula I and a moiety represented by the following Chemical Formula II:
摘要翻译：有机光电器件用化合物，包含该有机光电器件的有机光电器件和包含有机光电器件的显示器件，该化合物包含由以下化学式I表示的部分和由以下化学式表示的部分的组合二：

39. 发明授权

US09419229B2 Compound, organic optoelectric device including the same and display device including the optoelectric device 有权
标题翻译：复合有机光电器件及其它包括光电器件在内的显示器件
公开(公告)号：US09419229B2
公开(公告)日：2016-08-16
申请号：US14084687
申请日：2013-11-20
申请人： Jin-Seok Hong , Dong-Min Kang , Eun-Sun Yu , Soo-Young Jeong , Ji-Hun Shin , Dong-Kyu Ryu , Han-ill Lee , Yu-Na Jang
发明人： Jin-Seok Hong , Dong-Min Kang , Eun-Sun Yu , Soo-Young Jeong , Ji-Hun Shin , Dong-Kyu Ryu , Han-ill Lee , Yu-Na Jang
IPC分类号： H01L51/54 , H01L51/00 , C07D487/04 , C07D235/02 , C07D239/04 , C07D401/14 , C09K11/06
CPC分类号： H01L51/0067 , C07D235/02 , C07D239/04 , C07D401/14 , C07D487/04 , C09K11/06 , H01L51/0072 , H01L51/0081 , H01L51/0085 , H01L2251/308
摘要： Disclosed are a compound for an organic optoelectric device, an organic optoelectric device including the same and a display device including the organic optoelectric device, wherein the compound for an organic optoelectric device is represented by the following Chemical Formula 1, In the above Chemical Formula 1, R1 to R7, X, L1 and L2 are the same as described in the detailed description.
摘要翻译：公开了一种有机光电器件的化合物，包含该有机光电器件的有机光电器件和包括有机光电器件的显示器件，其中有机光电器件的化合物由以下化学式1表示。在上述化学式1中 R1〜R7，X，L1，L2与详细说明相同。

40. 发明授权

US09093652B2 Compound for an organic photoelectric device, organic photoelectric device including the same, and display device including the organic photoelectric device 有权
标题翻译：用于有机光电装置的化合物，包含该有机光电装置的有机光电装置和包括该有机光电装置的显示装置
公开(公告)号：US09093652B2
公开(公告)日：2015-07-28
申请号：US13525766
申请日：2012-06-18
申请人： Sung-Hyun Jung , Myeong-Soon Kang , Ho-Kuk Jung , Nam-Soo Kim , Nam-Heon Lee , Eui-Su Kang , Dong-Min Kang , Mi-Young Chae
发明人： Sung-Hyun Jung , Myeong-Soon Kang , Ho-Kuk Jung , Nam-Soo Kim , Nam-Heon Lee , Eui-Su Kang , Dong-Min Kang , Mi-Young Chae
IPC分类号： C07D401/10 , H01L51/46 , H01L51/54 , C07D403/10 , H01L51/00 , C09K11/06 , H05B33/10 , C09B57/00
CPC分类号： H01L51/0067 , C09B57/00 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1044 , C09K2211/1059 , H05B33/10 , Y02E10/549
摘要： A compound for an organic photoelectric device, the compound being represented by Chemical Formula 1 or 2:
摘要翻译：化合物由化学式1或2表示的有机光电器件用化合物：

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