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    • 31. 发明授权
    • Mechanical memory device and method of manufacturing the same
    • 机械记忆装置及其制造方法
    • US07564085B2
    • 2009-07-21
    • US11606966
    • 2006-12-01
    • Jae-Eun JangSeung-Nam ChaByong-Gwon SongYong-Wan Jin
    • Jae-Eun JangSeung-Nam ChaByong-Gwon SongYong-Wan Jin
    • H01L27/108H01L29/08
    • G11C13/025B82Y10/00G11C23/00H01L27/10805H01L27/1203H01L29/0665H01L29/0673H01L29/0676H01L29/86Y10S977/724Y10S977/725
    • A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.
    • 提供了使用纳米线的机械移动执行写入和读取操作的存储器件,以及制造存储器件的方法。 存储器件包括源电极,漏电极和栅电极,它们都形成在绝缘衬底上。 在源电极上形成纳米线电容器。 纳米线电容器包括从源极垂直生长的第一纳米线,形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。 在漏电极上垂直生长第二纳米线。 漏极布置在源电极和栅电极之间。 当向漏电极施加漏极电压时,第二纳米线弹性变形并与纳米线电容器接触,并且漏极电压的极性与施加到源电极的源极电压的极性相反。 信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。 通过第二纳米线的机械运动来进行记忆装置的读写操作。