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    • 31. 发明授权
    • Variable-capacitance diode element having wide capacitance variation
range
    • 具有宽电容变化范围的变容二极管元件
    • US5024955A
    • 1991-06-18
    • US537689
    • 1990-06-13
    • Takeshi Kasahara
    • Takeshi Kasahara
    • H01L29/93
    • H01L29/93Y10S148/004Y10S257/913
    • A variable-capacitance diode element is disclosed which comprises a semiconductor substrate of a first conductivity type having an epitaxial layer of the first conductivity type provided on a main surface portion thereof, said epitaxial layer having a higher resistivity than that of said semiconductor substrate; a first diffusion layer of the first conductivity type diffused in said epitaxial layer and having a lower resistivity than that of said epitaxial layer; a second diffusion layer of a second conductivity type surrounded by said first diffusion layer and having a lower resistivity than that of said first diffusion layer; and a third diffusion layer of the second conductivity type of a small diffusion length covering an exposed portion of a major surface of said first diffusion layer and an exposed portion of a major surface of said second diffusion layer. With such construction, the capacitance variation range of the diode element is widened, and the high-frequency serial resistance R.sub.s is reduced, so that the quality factor Q is enhanced.
    • 公开了一种变容二极管元件,其包括:第一导电类型的半导体衬底,其具有设置在其主表面部分上的第一导电类型的外延层,所述外延层具有比所述半导体衬底高的电阻率; 所述第一导电类型的第一扩散层扩散在所述外延层中并且具有比所述外延层的电阻率低的电阻率; 由所述第一扩散层包围并具有比所述第一扩散层低的电阻率的第二导电类型的第二扩散层; 以及覆盖所述第一扩散层的主表面的暴露部分和所述第二扩散层的主表面的暴露部分的小扩散长度的第二导电类型的第三扩散层。 通过这样的结构,二极管元件的电容变化范围变宽,高频串联电阻Rs减小,从而提高品质因数Q。
    • 32. 发明授权
    • Method of making a variable-capacitance diode device
    • 制造变容二极管器件的方法
    • US4868134A
    • 1989-09-19
    • US233064
    • 1988-08-17
    • Takeshi Kasahara
    • Takeshi Kasahara
    • H01L21/329H01L29/36H01L29/93
    • H01L29/66174H01L29/36H01L29/93Y10S148/171Y10S438/919
    • A method of making a variable-capacitance diode device including semiconductor layer a first conductivity type in which the impurity concentration decreases with increasing depth from surface of a PN junction. The semiconductor layer of the first conductivity type is formed by diffusing an impurity element of the first conductivity type in a semiconductor substrate with a high degree of concentration. Thereafter, a semiconductor layer of a second conductivity type is formed which has such an impurity concentration profile that the concentration of impurity element of the second conductivity type is lower than the impurity concentration of said semiconductor layer of the first conductivity type formed in said semiconductor substrate and at a predetermined depth, the concentration of the second conductivity type impurity element is substantially equal or close to the concentration of the first conductivity type impurity element. Subsequent to the formation of the first conductivity type semiconductor layer, an impurity element of the second conductivity type is diffused so as to define said PN junction with said first conductivity type semiconductor layer.
    • 一种制造变容二极管器件的方法,该器件包括第一导电类型的半导体层,其中杂质浓度随着PN结表面的深度增加而减小。 第一导电类型的半导体层通过在半导体衬底中以高浓度的浓度扩散第一导电类型的杂质元素而形成。 此后,形成第二导电类型的半导体层,其具有这样的杂质浓度分布,使得第二导电类型的杂质元素的浓度低于形成在所述半导体衬底中的所述第一导电类型的所述半导体层的杂质浓度 并且在预定深度,第二导电型杂质元素的浓度基本上等于或接近于第一导电型杂质元素的浓度。 在形成第一导电类型半导体层之后,第二导电类型的杂质元素被扩散以便与所述第一导电类型半导体层限定所述PN结。
    • 34. 发明授权
    • Hybrid circuit device
    • 混合电路装置
    • US4656442A
    • 1987-04-07
    • US701211
    • 1985-02-13
    • Yasumitsu Hayakawa
    • Yasumitsu Hayakawa
    • H01L25/16H03H7/32H05K3/34H05K3/40H01K1/14
    • H05K3/3405H01L25/16H03H7/32H01L2924/0002H05K2201/1034H05K3/403
    • A hybrid circuit device comprising a flat package incorporating an integrated circuit therein, and a delay line circuit constituted by a plurality of coils and a plurality of capacitors. A base plate supporting the delay line circuit is disposed on the flat package. First terminals which are upwardly bent and second terminals are led out of the flat package. The upwardly-bent terminals connect the integrated circuit and delay line circuit to each other at side portions of the base plate. Furthermore, separate external terminals, which are attached to the base plate and connected to the second terminals of the flat package, are provided in two rows holding the flat package therebetween. The device is encapsulated with the free end portion of each of the separate external terminals being exposed through the encapsulation at a position substantially equidistant from the top and bottom surfaces of the encapsulated device.
    • 一种混合电路装置,包括其中包含集成电路的扁平封装以及由多个线圈和多个电容器构成的延迟线电路。 支撑延迟线电路的基板设置在扁平封装上。 向上弯曲的第一端子和第二端子被引出平面封装。 向上弯曲的端子将集成电路和延迟线电路在基板的侧部彼此连接。 此外,附接到基板并连接到扁平封装的第二端子的分离的外部端子设置成两行,其中保持平坦封装。 该装置被封装,每个分离的外部端子的自由端部分通过封装暴露在与封装装置的顶表面和底表面基本等距的位置处。
    • 35. 发明授权
    • Switch circuit provided with means for setting up the initial condition
thereof
    • 开关电路具有用于设定其初始状态的装置
    • US4633444A
    • 1986-12-30
    • US537825
    • 1983-09-30
    • Koichi NakayamaYoshito Tanaka
    • Koichi NakayamaYoshito Tanaka
    • G11C5/14G11C7/20G11C11/40
    • G11C5/141G11C7/20
    • In a switch circuit, there are provided a signal input stage comprising an array of switches paired with pilot lamps; a storage circuit comprising I.sup.2 L elements for storing a signal derived from the signal input stage; a circuit for causing that one of the pilot lamps be lit which is associated with a predetermined one of the switches; electronic switches for controlling a signal source in response to the signal derived from the signal input stage; an auxiliary current source circuit for holding the memory at the storage circuit when the main power supply is interrupted; and a circuit adapted, when the capacity of the auxiliary current source circuit is decreased and when the main power is supplied, to turn on a predetermined one of the switches while turning off the remaining ones of the switches, thereby setting the storage circuit to a predetermined initial condition.
    • 在开关电路中,提供了包括与指示灯配对的开关阵列的信号输入级; 存储电路,包括用于存储从信号输入级导出的信号的I2L元件; 用于使所述指示灯中的一个点亮的电路与与所述开关中的预定开关相关联; 电子开关,用于响应于从信号输入级导出的信号来控制信号源; 辅助电流源电路,用于在主电源中断时将存储器保持在存储电路; 以及电路,当辅助电流源电路的容量减小并且当主电源被供给时,在关闭其余的开关的同时接通预定的一个开关,从而将存储电路设置为 预定的初始条件。
    • 36. 发明授权
    • Current injection type logical operation circuit arrangement including a
I.sup.2 L circuit device comprising I.sup.2 L elements
    • 电流注入型逻辑运算电路装置包括包含I2L元件的I2L电路装置
    • US4531065A
    • 1985-07-23
    • US402566
    • 1982-07-28
    • Koichi NakayamaYoshito Tanaka
    • Koichi NakayamaYoshito Tanaka
    • H03K3/037H03K17/24H03K19/091H03K19/003
    • H03K17/24H03K19/091H03K3/0375
    • A I.sup.2 L circuit device including logical operation circuits comprising I.sup.2 L elements, wherein when main power supply is interrupted, an injector current is injected from an auxiliary current source circuit into part of the I.sup.2 L circuit device to thereby hold a logical value, so that when the main power supply is restored, the logical state having been prevailing prior to the interruption of the main power supply is restored. When applied to a drive circuit for a switch including a self-restore type contact, for example, this I.sup.2 L circuit device is operative such that the switch is set to a predetermined logical value; the logical value is stored in a storage circuit of the I.sup.2 L circuit device; and when the main power supply is interrupted, an injector current is injected from the auxiliary current source circuit into the storage circuit to thereby hold the stored logical value so that when the main power supply is restored, the logical value having been prevailing prior to the interruption of the main power supply is also restored.
    • 包括I2L元件的逻辑运算电路的I2L电路器件,其中当主电源中断时,将注入电流从辅助电流源电路注入到I2L电路器件的一部分中,从而保持逻辑值,使得当主电源 电源恢复,恢复主电源中断之前的逻辑状态。 例如,当应用于包括自恢复型接触的开关的驱动电路时,该I2L电路装置可操作使得开关被设置为预定的逻辑值; 逻辑值存储在I2L电路装置的存储电路中; 并且当主电源中断时,将喷射器电流从辅助电流源电路注入到存储电路中,从而保持存储的逻辑值,使得当主电源恢复时,逻辑值在 主电源中断也恢复。
    • 37. 发明授权
    • Switching regulator
    • 开关稳压器
    • US4387418A
    • 1983-06-07
    • US206970
    • 1980-11-14
    • Tsutomu Koike
    • Tsutomu Koike
    • H02M3/338H02M3/335
    • H02M3/3385
    • A switching regulator is disclosed which is designed so that a negative feedback is applied to the base of a transistor constituting an oscillator adapted for chopping a DC voltage, only during a period of time which is required to effect pulse width control when the transistor is switched from conduction to non-conduction. A control circuit may also be provided which is arranged to compare the output of a current detecting circuit for detecting a current proportional to a current for driving a transformer with the output of an error voltage amplifier for amplifying an output resulting from comparison of a rectified version of the AC output of the transformer with a reference voltage. The foregoing control circuit is also arranged so that when the output of the current detecting circuit exceeds the output of the error amplifier, a trigger signal is imparted to cause the oscillator to be changed from the on state to the off state.
    • 公开了一种开关调节器,其被设计成仅在构成用于斩波DC电压的振荡器的晶体管的基极上施加负反馈时,仅在晶体管被切换时需要进行脉冲宽度控制的时间段期间 从传导到非传导。 还可以提供一种控制电路,其被配置为比较用于检测与用于驱动变压器的电流成比例的电流的电流检测电路的输出与误差电压放大器的输出,用于放大由整流版本的比较导致的输出 的变压器的交流输出与参考电压。 上述控制电路还被布置成使得当电流检测电路的输出超过误差放大器的输出时,施加触发信号以使振荡器从接通状态变为截止状态。
    • 38. 发明授权
    • Switching regulator provided with charge-discharge circuit having
overcurrent protecting function and soft-start function
    • 开关稳压器具有充放电电路,具有过流保护功能和软起动功能
    • US4272805A
    • 1981-06-09
    • US66428
    • 1979-08-13
    • Yasuhide IguchiTsutomu Koike
    • Yasuhide IguchiTsutomu Koike
    • H02M3/28H02M3/338H02M3/335
    • H02M3/3385
    • A switching regulator in which an input DC voltage is chopped and then applied to drive a transformer from which an AC voltage is derived which in turn is rectified in a rectifier circuit, and the output of the rectifier circuit is compared with a first reference voltage so that an output is provided which corresponds to the difference between the two voltages compared with each other and which causes a current to be charged at a capacitor incorporated in a charge-discharge circuit which is arranged to vary the charged current, and the output of the charge-discharge circuit is compared with a second reference voltage so that a trigger signal is produced and applied to the base of a switching transistor only when the output of the charge-discharge circuit exceeds the second reference voltage.
    • 一种开关调节器,其中输入直流电压被斩波然后被施加以驱动导致AC电压的变压器,所述变压器又在整流器电路中被整流,并且将整流器电路的输出与第一参考电压进行比较,从而 提供输出,其对应于彼此相比的两个电压之间的差异,并且使得在被布置为改变充电电流的充电 - 放电电路中并入的电容器中充电电流,并且输出 将充放电电路与第二参考电压进行比较,使得仅当充放电电路的输出超过第二参考电压时才产生触发信号并施加到开关晶体管的基极。
    • 39. 发明授权
    • Semiconductor device and method of making the same
    • 半导体器件及其制造方法
    • US4260999A
    • 1981-04-07
    • US28022
    • 1979-04-06
    • Fumio Yoshioka
    • Fumio Yoshioka
    • H01L21/761H01L21/8222H01L21/8228H01L27/082H01L29/72
    • H01L27/0826H01L21/761H01L21/8222
    • A semiconductor device and a method of manufacturing the same, wherein there are provided, on a semiconductor substrate of a first conductivity type, a first and a second epitaxial layer each having a second conductivity type opposite to the first conductivity type. A plurality of regions are defined in the entire area of the epitaxial layer by being isolated by means of an isolation layer of the first conductivity type which extends from the surface of the second epitaxial layer to the semiconductor substrate. Furthermore, a first buried layer of the second conductivity type is formed in each of the isolated regions in such a manner as to extend in the first epitaxial layer and semiconductor substrate so that a transistor can be formed on each first buried layer.
    • 一种半导体器件及其制造方法,其中在第一导电类型的半导体衬底上设置第一和第二外延层,其具有与第一导电类型相反的第二导电类型。 通过从第二外延层的表面延伸到半导体衬底的第一导电类型的隔离层来隔离外延层的整个区域中的多个区域。 此外,在每个隔离区域中形成第二导电类型的第一埋层,以便在第一外延层和半导体衬底中延伸,使得可以在每个第一掩埋层上形成晶体管。
    • 40. 发明授权
    • Power conversion device
    • 电源转换装置
    • US4215391A
    • 1980-07-29
    • US926889
    • 1978-07-21
    • Kazuo Kameya
    • Kazuo Kameya
    • H02M3/337H02M3/335
    • H02M3/337
    • A power control circuit which includes at least one DC power source; and at least one transformer including an excitation winding, a primary winding and a secondary winding; at least two transistors; and at least two diodes. In this circuit, a current increasing with time is caused to flow through the primary winding after energy has been accumulated in the excitation winding. Furthermore, a current induced in the secondary winding by the current of the primary winding and a current resulting from the energy of the excitation winding are superimposed upon each other, and the current resulting from such superimposition is rectified so that there is provided a continuous output.
    • 一种功率控制电路,包括至少一个直流电源; 以及包括励磁绕组,初级绕组和次级绕组的至少一个变压器; 至少两个晶体管; 和至少两个二极管。 在该电路中,在激励绕组中累积能量之后,随着时间的流逝而增加的电流流过初级绕组。 此外,通过初级绕组的电流在次级绕组中感应的电流和由励磁绕组的能量产生的电流彼此叠加,并且由这种叠加产生的电流被整流,从而提供连续输出 。