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31. 发明申请

US20100038542A1 Wideband Semiconducting Light Detector 有权
标题翻译：宽带半导体光检测器
公开(公告)号：US20100038542A1
公开(公告)日：2010-02-18
申请号：US12252101
申请日：2008-10-15
申请人： James E. Carey , Nathaniel J. McCaffrey , Martin U. Pralle
发明人： James E. Carey , Nathaniel J. McCaffrey , Martin U. Pralle
IPC分类号： H01L27/14
CPC分类号： H01L27/14669 , G01J3/36 , G01J5/02 , G01J5/023 , G01J5/08 , G01J5/0846 , G01J5/20 , G01J5/40 , H01L27/14652
摘要： A detector incorporating a laser-doped element that is favorably absorbing to at least a portion of the electromagnetic spectrum, for example in the infra-red range, is used in a light detector article. Readout circuits permitting a detector to operate in a substantial range of the electromagnetic spectrum, including the visual and infra-red range, enable day and night imaging in some embodiments. Configurations for making the detectors are also disclosed.
摘要翻译：在光检测器制品中使用包含有利地吸收到电磁光谱的至少一部分的激光掺杂元件的检测器，例如在红外范围内。允许检测器在包括视觉和红外范围在内的电磁光谱的实质范围内操作的读出电路在一些实施例中使得能够进行日夜成像。还公开了用于制造检测器的配置。

32. 发明申请

US20170161557A9 Biometric Imaging Devices and Associated Methods 审中-公开
公开(公告)号：US20170161557A9
公开(公告)日：2017-06-08
申请号：US14761854
申请日：2014-01-17
申请人： SiOnyx, LLC
发明人： Stephen D. Saylor , Martin U. Pralle , James E. Carey , Homayoon Haddad
IPC分类号： G06K9/00 , H04N5/33
CPC分类号： G06K9/00604 , G01S7/4816 , G01S17/89 , G06K9/00255 , G06K9/2036 , G06K9/209 , H01L27/14643 , H01L27/14649 , H04N5/33 , H04N9/045
摘要： Systems, devices, and methods for authenticating an individual or user using biometric features is provided. In one aspect, for example, a system for authenticating a user through identification of at least one biometric feature can include an active light source capable of emitting electromagnetic radiation having a peak emission wavelength at from about 700 nm to about 1200 nm, where the active light source is positioned to emit the electromagnetic radiation to impinge on at least one biometric feature of the user, and an image sensor having infrared light-trapping pixels positioned relative to the active light source to receive and detect the electromagnetic radiation upon reflection from the at least one biometric feature of the user. The system can further include a processing module functionally coupled to the image sensor and operable to generate an electronic representation of the at least one biometric feature of the user from detected electromagnetic radiation, and an authentication module functionally coupled to the processing module that is operable to receive and compare the electronic representation to an authenticated standard of the at least one biometric feature of the user to provide authentication of the user.

33. 发明申请

US20160035782A1 SHALLOW TRENCH TEXTURED REGIONS AND ASSOCIATED METHODS 有权
公开(公告)号：US20160035782A1
公开(公告)日：2016-02-04
申请号：US14884181
申请日：2015-10-15
申请人： SiOnyx, Inc.
发明人： Homayoon Haddad , Jutao Jiang
IPC分类号： H01L27/146 , H01L31/18 , H01L31/028
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14689 , H01L31/02327 , H01L31/028 , H01L31/182
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

34. 发明申请

US20150014803A1 SHALLOW TRENCH TEXTURED REGIONS AND ASSOCIATED METHODS 有权
标题翻译：沙滩纹理区域和相关方法
公开(公告)号：US20150014803A1
公开(公告)日：2015-01-15
申请号：US14084392
申请日：2013-11-19
申请人： SiOnyx, Inc.
发明人： Homayoon Haddad
IPC分类号： H01L27/146 , H01L31/18 , H01L31/028
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14689 , H01L31/02327 , H01L31/028 , H01L31/182
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
摘要翻译：提供光敏设备和相关方法。在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体层，耦合到半导体层并被定位成与电磁辐射相互作用的纹理区域。纹理化区域可以由一系列浅沟槽隔离特征形成。

35. 发明申请

US20140197509A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
标题翻译：感光成像装置及相关方法
公开(公告)号：US20140197509A1
公开(公告)日：2014-07-17
申请号：US13770897
申请日：2013-02-19
申请人： SiOnyx, Inc.
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/0236 , H01L31/0352
CPC分类号： H01L27/14629 , H01L27/1461 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L31/0232 , H01L31/0236 , H01L31/0352
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
摘要翻译：提供背面照明感光装置及相关方法。在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于在纹理化区域和至少一个结点之间。定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

36. 发明授权

US08704145B2 Response-enhanced monolithic-hybrid pixel 有权
标题翻译：响应增强的单片混合像素
公开(公告)号：US08704145B2
公开(公告)日：2014-04-22
申请号：US13652399
申请日：2012-10-15
申请人： SiOnyx, Inc.
发明人： Kenton Veeder
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： G01J1/4228 , H01L27/14609
摘要： A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate.
摘要翻译：用于检测电磁光谱的至少一部分的感光像素包括具有用于检测电磁光谱的波长的红外范围的微结构表面的第一检测器元件。光感测像素还包括用于检测电磁光谱的第二波长范围的第二检测器元件，其中第二波长范围比第一波长范围短，并且第一和第二检测器元件整体地形成在硅上基质。

37. 发明授权

US08680591B2 Photosensitive imaging devices and associated methods 有权
标题翻译：感光成像设备及相关方法
公开(公告)号：US08680591B2
公开(公告)日：2014-03-25
申请号：US12885158
申请日：2010-09-17
申请人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Leonard Forbes , Chintamani Palsule
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Leonard Forbes , Chintamani Palsule
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.
摘要翻译：提供光敏设备和相关方法。在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域以及耦合到半导体衬底并且可操作以从所述至少一个结转移电信号。在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

38. 发明申请

US20140048899A1 LOW DAMAGE LASER-TEXTURED DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：低损耗激光设备和相关方法
公开(公告)号：US20140048899A1
公开(公告)日：2014-02-20
申请号：US13764512
申请日：2013-02-11
申请人： SIONYX, INC.
发明人： Jason Sickler , Christopher Vineis , James E. Carey
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/02363 , B23K26/0624 , B23K26/355 , H01L21/268 , Y02E10/50
摘要： Methods for laser processing semiconductor materials for use in optoelectronic and other devices, including materials, devices, and systems associated therewith are provided. In one aspect, a method of minimizing laser-induced material damage while laser-texturing a semiconductor material can include delivering short pulse duration laser radiation to a target region of a semiconductor material to form a textured region having a reorganized surface layer, wherein the laser radiation has a wavelength from about 200 nm to about 600 nm and a pulse duration of from about 10 femtoseconds to about 400 picoseconds, and wherein defect density of the semiconductor material from beneath the reorganized surface layer up to a depth of about 1 micron is less than or equal to about 1012/cm3.
摘要翻译：提供了用于激光处理用于光电子器件和其他器件的半导体材料的方法，包括与其相关的材料，器件和系统。在一个方面，一种在半导体材料的激光纹理化过程中最小化激光诱导的材料损伤的方法可以包括将短脉冲持续时间的激光辐射传送到半导体材料的目标区域，以形成具有重新组织的表面层的纹理区域，其中激光辐射具有约200nm至约600nm的波长和约10飞秒至约400皮秒的脉冲持续时间，并且其中重组表面层下方的半导体材料的缺陷密度低至约1微米的深度较小大于或等于约1012 / cm3。

39. 发明申请

US20130207214A1 Integrated Visible and Infrared Imager Devices and Associated Methods 有权
标题翻译：集成可见和红外成像仪器及相关方法
公开(公告)号：US20130207214A1
公开(公告)日：2013-08-15
申请号：US13712865
申请日：2012-12-12
申请人： SIONYX, INC.
发明人： Homayoon Haddad , Leonard Forbes
IPC分类号： H01L31/0236 , H01L27/146
CPC分类号： H01L31/0236 , G01J5/20 , H01L27/146 , H01L27/1465 , H01L31/02363 , H01L31/186 , Y02E10/50
摘要： Semiconductor devices having three dimensional (3D) architectures and methods form making such devices are provided. In one aspect, for example, a method for making a semiconductor device can include forming a device layer on a front side of a semiconductor layer that is substantially defect free, bonding a carrier substrate to the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a smart substrate to the processed surface. In some aspects, the method can also include removing the carrier substrate from the semiconductor layer to expose the device layer.
摘要翻译：提供具有三维（3D）架构和形成这种装置的方法的半导体器件。一方面，例如，制造半导体器件的方法可以包括在基本上无缺陷的半导体层的正面上形成器件层，将载体衬底结合到器件层，在后面处理半导体层侧，以形成处理后的表面，以及将智能衬底粘合到经处理的表面上。在一些方面，该方法还可以包括从半导体层移除载体衬底以暴露器件层。

40. 发明申请

US20130168792A1 Three Dimensional Architecture Semiconductor Devices and Associated Methods 审中-公开
标题翻译：三维结构半导体器件及相关方法
公开(公告)号：US20130168792A1
公开(公告)日：2013-07-04
申请号：US13652336
申请日：2012-10-15
申请人： SiOnyx, Inc.
发明人： Homayoon Haddad , Leonard Forbes
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , H01L27/14634 , H01L27/14652 , H01L27/1467 , H01L31/186 , H01L31/1892 , Y02E10/50
摘要： Semiconductor devices having three dimensional (3D) architectures and methods form making such devices are provided. In one aspect, for example, a method for making a semiconductor device can include forming a device layer on a front side of a semiconductor layer that is substantially defect free, bonding a carrier substrate to the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a smart substrate to the processed surface. In some aspects, the method can also include removing the carrier substrate from the semiconductor layer to expose the device layer.
摘要翻译：提供具有三维（3D）架构和形成这种装置的方法的半导体器件。一方面，例如，制造半导体器件的方法可以包括在基本上无缺陷的半导体层的正面上形成器件层，将载体衬底结合到器件层，在后面处理半导体层侧，以形成处理后的表面，以及将智能衬底粘合到经处理的表面上。在一些方面，该方法还可以包括从半导体层移除载体衬底以暴露器件层。

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