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31. 发明授权

US08911748B2 Cholera toxin chimera and its use as a staph vaccine 有权
标题翻译：霍乱毒素嵌合体及其作为葡萄球菌疫苗的用途
公开(公告)号：US08911748B2
公开(公告)日：2014-12-16
申请号：US13896854
申请日：2013-05-17
申请人： Boise State University
发明人： Juliette Tinker
IPC分类号： A61K39/085 , A61K39/00 , A61K39/02 , A61K45/00 , A61K38/00 , C07K1/00 , A61K39/39 , C07K14/31 , C07K14/28
CPC分类号： A61K39/39 , A61K39/085 , A61K2039/543 , A61K2039/552 , A61K2039/575 , A61K2039/6037 , C07K14/28 , C07K14/31 , Y10S424/823 , Y10S424/828 , Y10S424/829 , Y10S530/825
摘要： The present invention relates to chimeric protein vaccines and methods of use thereof in the treatment of Staphylococcus aureus. One embodiment of the present invention provides a method of generating an immune response in a mammal, that includes administering to the mammal, a composition having a chimeric protein having at least one of: a portion of a cholera toxin, a portion of a heat-labile toxin, and a portion of a shiga toxin; and an antigen having at least one of: an antigenic material from S. aureus and an antigenic material from a S. aureus-specific polypeptide.
摘要翻译：本发明涉及嵌合蛋白疫苗及其用于治疗金黄色葡萄球菌的方法。本发明的一个实施方案提供了在哺乳动物中产生免疫应答的方法，其包括向哺乳动物施用具有嵌合蛋白的组合物，所述组合物具有以下至少一种：霍乱毒素的一部分，不稳定毒素和志贺毒素的一部分; 以及具有以下至少一种的抗原：来自金黄色葡萄球菌的抗原物质和来自金黄色葡萄球菌特异性多肽的抗原物质。

32. 发明授权

US08834898B2 Cholera toxin chimera and its use as a staph vaccine 有权
标题翻译：霍乱毒素嵌合体及其作为葡萄球菌疫苗的用途
公开(公告)号：US08834898B2
公开(公告)日：2014-09-16
申请号：US13328686
申请日：2011-12-16
申请人： Juliette Tinker
发明人： Juliette Tinker
IPC分类号： A61K39/085 , A61K39/00 , A61K39/02 , A61K45/00 , A61K39/002 , A61K38/00 , C07K1/00
CPC分类号： A61K39/085 , A61K39/107 , A61K2039/55516 , A61K2039/575 , A61K2039/6037 , C07K14/28 , C07K14/31 , C07K14/315 , C07K2319/00
摘要： The present invention relates to chimeric protein vaccines and methods of use thereof in the treatment of Staphylococcus aureus. One embodiment of the present invention provides a method of generating an immune response in a mammal, that includes administering to the mammal, a composition having a chimeric protein having at least one of: a portion of a cholera toxin, a portion of a heat-labile toxin, and a portion of a shiga toxin; and an antigen having at least one of an antigenic material from S. aureus and an antigenic material from a S. aureus-specific polypeptide.
摘要翻译：本发明涉及嵌合蛋白疫苗及其用于治疗金黄色葡萄球菌的方法。本发明的一个实施方案提供了在哺乳动物中产生免疫应答的方法，其包括向哺乳动物施用具有嵌合蛋白的组合物，所述组合物具有以下至少一种：霍乱毒素的一部分，不稳定毒素和志贺毒素的一部分; 以及具有来自金黄色葡萄球菌的抗原物质和来自金黄色葡萄球菌特异性多肽的抗原物质中的至少一种的抗原。

33. 发明申请

US20130192601A1 Flow-Inflating Mask Interface for Noninvasive Positive Pressure Ventilation 审中-公开
标题翻译：用于无创正压通气的流动充气面罩接口
公开(公告)号：US20130192601A1
公开(公告)日：2013-08-01
申请号：US13361484
申请日：2012-01-30
申请人： Uwe Reischl , Lonny Ashworth , Lutana Haan
发明人： Uwe Reischl , Lonny Ashworth , Lutana Haan
IPC分类号： A61M16/06
CPC分类号： A61M16/06 , A61M16/0616
摘要： A flow-inflating respiratory face mask is disclosed that includes a thin, pliant skirt that surrounds the base of the face mask. The skirt inflates automatically when the face mask receives external pressurized air. The skirt is compliant, soft, and adapts easily to the topography of the face which produces a good fit and adds to the comfort of the patient.
摘要翻译：公开了一种充气呼吸面罩，其包括围绕面罩基部的薄而柔软的裙部。当面罩接受外部加压空气时，裙子会自动充气。裙子是柔顺的，柔软的，并且容易适应面部的地形，产生良好的适合性并增加患者的舒适度。

34. 发明授权

US08295081B2 Forced ion migration for chalcogenide phase change memory device 有权
标题翻译：硫属化物相变存储器件强制离子迁移
公开(公告)号：US08295081B2
公开(公告)日：2012-10-23
申请号：US13085265
申请日：2011-04-12
申请人： Kristy A. Campbell
发明人： Kristy A. Campbell
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/1683 , Y10S977/754
摘要： Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus “activating” the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
摘要翻译：已经研究了包括有源存储器件的具有两层叠层的硫族化物材料的非易失性存储器件作为相变存储器的潜力。测试的器件包括GeTe / SnTe，Ge2Se3 / SnTe和Ge2Se3 / SnSe堆叠。所有器件表现出电阻切换行为。由于电场引起的Sn或Te向Ge-硫族化物层的移动，相对于SnTe或SnSe层的施加电压的极性对于存储器开关特性至关重要。本发明的一个实施方案是包含含硫族化物的层的堆叠的装置，其仅在反向极性电压电位施加到堆叠之后才显示相变开关，导致离子移动到相邻层中，并且因此激活装置以充当相变随机存取存储器件或可重新配置的电子器件，当所施加的电压电位恢复到正常极性时。本发明的另一实施例是能够呈现多于两个数据状态的装置。

35. 发明授权

US08238146B2 Variable integrated analog resistor 有权
标题翻译：可变集成模拟电阻
公开(公告)号：US08238146B2
公开(公告)日：2012-08-07
申请号：US12534818
申请日：2009-08-03
申请人： Kristy A. Campbell
发明人： Kristy A. Campbell
IPC分类号： G11C11/00
CPC分类号： G11C27/005 , G11C11/5614 , G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2211/5614
摘要： The invention relates to the use of chalcogenide devices exhibiting negative differential resistance in integrated circuits as programmable variable resistor components. The present invention is a continuously variable integrated analog resistor made of a chalcogenide material, such as a GeSeAg alloy. Continuously variable resistor states are obtained in the material via application of an electrical pulse to it. The pulse sequence, duration and applied potential determine the value of the resistance state obtained.
摘要翻译：本发明涉及在集成电路中表现出负差动电阻的硫族化物器件作为可编程可变电阻器部件的用途。本发明是由诸如GeSeAg合金的硫族化物材料制成的连续可变的集成模拟电阻器。通过向其施加电脉冲在材料中获得连续可变电阻器状态。脉冲序列，持续时间和施加电位决定了所获得的电阻状态的值。

36. 发明申请

US20120047610A1 CANTILEVER-BASED OPTICAL INTERFACE FORCE MICROSCOPE 审中-公开
标题翻译：基于CANTILEVER的光学接口力显微镜
公开(公告)号：US20120047610A1
公开(公告)日：2012-02-23
申请号：US13286059
申请日：2011-10-31
申请人： Byung I. Kim
发明人： Byung I. Kim
IPC分类号： G01Q20/02 , G01Q20/00
CPC分类号： G01Q20/02 , B82Y35/00 , G01Q30/14 , G01Q60/32 , G01Q60/36 , G01Q60/38 , G01Q70/10
摘要： A method and an apparatus for detecting a normal force component and a friction force component between a probe and a sample substance using an interfacial force microscope is disclosed herein. According to one embodiment, a method of measuring normal and friction forces with an interfacial force microscope includes positioning a sample substance on a piezotube and in proximity to a probe suspended from a cantilever such that a molecular force between the sample substance and the probe causes the cantilever to deflect. The method may include converting the deflection of the cantilever into an electrical signal comprising a normal force and a friction force component, and measuring the normal and friction force components.
摘要翻译：本文公开了一种用于使用界面力显微镜检测探针和样品物质之间的法向力分量和摩擦力分量的方法和装置。根据一个实施例，使用界面力显微镜测量正常和摩擦力的方法包括将样品物质定位在压电管上并且靠近悬臂悬臂的探针，使得样品物质和探针之间的分子力导致悬臂偏转。该方法可以包括将悬臂的偏转转换成包括法向力和摩擦力分量的电信号，以及测量正常和摩擦力分量。

37. 发明申请

US20110037558A1 CONTINUOUSLY VARIABLE RESISTOR 有权
标题翻译：连续不变的电阻
公开(公告)号：US20110037558A1
公开(公告)日：2011-02-17
申请号：US12909760
申请日：2010-10-21
申请人： Kristy A. Campbell
发明人： Kristy A. Campbell
IPC分类号： H01C7/10
CPC分类号： G11C11/5614 , G11C11/5678 , G11C13/0004 , G11C13/0011 , G11C13/0069 , G11C27/005 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2013/009 , G11C2211/5614 , G11C2213/56
摘要： A continuously variable resistor is disclosed. The continuously variable resistor may comprise a first chalcogenide layer and a second chalcogenide layer. The second chalcogenide layers may be connected to the first chalcogenide layer and may have a metal interspersed within it. The second chalcogenide layer may be metal-rich, in a state of solid solution with the interspersed metal. The continuously variable resistor may be configured to exhibit NDR behavior. The continuously variable resistor may be configured to have three or more substantially non-volatile resistance states.
摘要翻译：公开了一种连续可变电阻器。连续可变电阻器可以包括第一硫族化物层和第二硫族化物层。第二硫族化物层可以连接到第一硫族化物层并且可以具有散布在其内的金属。第二硫族化物层可以是富金属的，处于与散在的金属的固溶体状态。连续可变电阻器可以被配置为展现NDR行为。连续可变电阻器可以被配置为具有三个或更多个基本上非易失性的电阻状态。

38. 发明授权

US07582222B2 Transition metal-doped oxide semiconductor exhibiting room-temperature ferromagnetism 有权
标题翻译：具有室温铁磁性的过渡金属掺杂氧化物半导体
公开(公告)号：US07582222B2
公开(公告)日：2009-09-01
申请号：US11195573
申请日：2005-08-01
申请人： Alex Punnoose
发明人： Alex Punnoose
IPC分类号： C09D5/23
CPC分类号： C01G19/00 , C01G19/02 , C01G49/06 , C01P2002/72 , C01P2002/82 , C01P2006/42 , G01N27/74 , G01N33/0027 , H01F1/401 , H01F10/193 , H01L29/24 , H01L29/26 , Y10S977/773 , Y10S977/811
摘要： An oxide semiconductor doped with a transition metal and exhibiting room-temperature ferromagnetism is disclosed. The transition metal-doped oxide semiconductor is preferably manufactured in powder form, and the transition metal is preferably evenly distributed throughout the oxide semiconductor. The preferred embodiments are iron-doped tin dioxide and cobalt-doped tin dioxide. Gases may be detected by passing them across a material and measuring the change in magnetic properties of the material; the preferred material is iron-doped tin dioxide.
摘要翻译：公开了掺杂有过渡金属并呈现室温铁磁性的氧化物半导体。过渡金属掺杂氧化物半导体优选以粉末形式制造，并且过渡金属优选均匀分布在整个氧化物半导体中。优选的实施方案是铁掺杂二氧化锡和掺杂钴的二氧化锡。可以通过将它们穿过材料并测量材料的磁性的变化来检测气体; 优选的材料是掺铁二氧化锡。

39. 发明申请

US20090137666A1 FLUORESCENT PARTICLES COMPRISING NANOSCALE ZnO LAYER AND EXHIBITING CELL-SPECIFIC TOXICITY 失效
标题翻译：包含纳米ZnO层和展示细胞特异性毒性的荧光颗粒
公开(公告)号：US20090137666A1
公开(公告)日：2009-05-28
申请号：US12235575
申请日：2008-09-22
申请人： Hua Wang , Denise Wingett , Kevin Feris , Madhusudan R. Kongara , Alex Punnoose
发明人： Hua Wang , Denise Wingett , Kevin Feris , Madhusudan R. Kongara , Alex Punnoose
IPC分类号： A61K31/315 , B05D3/00 , A61P31/04
CPC分类号： A61K49/0043 , A61K31/315 , A61K49/0093 , B82Y5/00 , B82Y20/00 , B82Y30/00 , Y02A50/473 , Y10S977/701 , Y10S977/712 , Y10S977/715
摘要： Multifunctional “smart” nanostructures are disclosed that include fluorescein isothiocyanate (FITC)-encapsulated SiO2 core-shell particles with a nanoscale ZnO finishing layer, wherein an outer ZnO layer is formed on the SiO2-FITC core. These ˜200 nm sized particles showed promise toward cell imaging and cellular uptake studies using the bacterium Escherichia coli and Jurkat cancer cells, respectively. The FITC encapsulated ZnO particles demonstrated excellent selectivity in preferentially killing Jurkat cancer cells with minimal toxicity to normal primary immune cells (18% and 75% viability remaining, respectively, after exposure to 60 μg/mL) and inhibited the growth of both gram-positive and gram-negative bacteria at concentrations ≧250-500 μg/mL (for Staphylococcus aureus and Escherichia coli, respectively). These results indicate that the FITC encapsulated multifunctional particles with nanoscale ZnO surface layer can be used as smart nanostructures for particle tracking, cell imaging, antibacterial treatments and cancer therapy.
摘要翻译：公开了多功能“智能”纳米结构，其包括具有纳米尺度ZnO整理层的异氰酸荧光素（FITC） - 包封的SiO2核 - 壳颗粒，其中在SiO 2 -FFTC芯上形成外部ZnO层。这些〜200nm大小的颗粒分别显示使用细菌大肠杆菌和Jurkat癌细胞的细胞成像和细胞摄取研究的希望。 FITC封装的ZnO颗粒显示出优异的杀死Jurkat癌细胞的选择性，对正常的初级免疫细胞具有最小的毒性（分别为暴露于60μg/ mL后分别为18％和75％存活率），并抑制革兰氏阳性和浓度> 250-500 mug / mL的革兰阴性菌（分别用于金黄色葡萄球菌和大肠杆菌）。这些结果表明，具有纳米尺度ZnO表面层的FITC封装的多功能颗粒可用作微粒跟踪，细胞成像，抗菌治疗和癌症治疗的智能纳米结构。

40. 发明申请

US20090136580A1 PREFERENTIAL KILLING OF CANCER CELLS AND ACTIVATED HUMAN T CELLS USING ZnO NANOPARTICLES 失效
标题翻译：使用ZnO纳米颗粒优先杀死癌细胞和活化的人类T细胞
公开(公告)号：US20090136580A1
公开(公告)日：2009-05-28
申请号：US12235415
申请日：2008-09-22
申请人： Alex Punnoose , Kongara R. Madhusudan , Denise Wingett
发明人： Alex Punnoose , Kongara R. Madhusudan , Denise Wingett
IPC分类号： A61K9/14 , C12N5/02 , A61K33/30
CPC分类号： A61K33/30 , A61K9/0019 , A61K9/14
摘要： Here we disclose the response of normal human cells to ZnO nanoparticles under different signaling environments and compare it to the response of cancerous cells. ZnO nanoparticles exhibit a strong preferential ability to kill cancerous T cells (˜28-35X) compared to normal cells. Interestingly, the activation state of the cell contributes toward nanoparticle toxicity as resting T cells display a relative resistance while cells stimulated through the T cell receptor and CD28 costimulatory pathway show greater toxicity in direct relation to the level of activation. The novel findings of cell selective toxicity towards potential disease causing cells indicate a potential utility of ZnO nanoparticle in the treatment of cancer and/or autoimmunity.
摘要翻译：在这里，我们公开了正常人细胞在不同信号环境下对ZnO纳米颗粒的反应，并将其与癌细胞的反应进行比较。与正常细胞相比，ZnO纳米颗粒表现出强烈的杀伤癌细胞（〜28-35X）的优先能力。有趣的是，细胞的激活状态有助于纳米颗粒毒性，因为静息T细胞显示相对抗性，而通过T细胞受体和CD28共刺激途径刺激的细胞与活化水平直接相关显示更大的毒性。细胞对潜在致病细胞的选择性毒性的新发现表明ZnO纳米颗粒在治疗癌症和/或自身免疫中的潜在用途。

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