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    • 25. 发明申请
    • SEMICONDUCTOR DEVICES BEING EXPOSED TO RADIATION
    • US20220028571A1
    • 2022-01-27
    • US17382260
    • 2021-07-21
    • AwareAbility Technologies, LLC
    • R Gregory Downing
    • G21H1/02H01L31/102H01L31/16H01L31/0224
    • Disclosed herein is a device that includes at least one functional semiconductor element; and static electric field source(s) associated with the at least one functional semiconductor element, the static electric field source(s) comprising at least one electret component and having a heterogeneous charge distribution. Also disclosed herein is a device includes a functional semiconductor element; a static electric field source comprising at least one electret element, the static electric field source imparting a static electric field to the functional semiconductor element; and at least one nuclear radiation source for continuously imparting nuclear beta radiation to the at least one electret element and/or the functional semiconductor element. Use of at least a radioactive beta source for replenishing charge in an electret, as well as use of at least a radioactive beta source for simultaneously replenishing charge in an electret and modifying charge mobility of a semiconductor material, are also disclosed. A nuclear battery includes at least one functional semiconductor element; at least one radiation source imparting nuclear radiation to the at least one functional semiconductor element; and at least one electret imparting a static electric field to the at least one functional semiconductor element.
    • 29. 发明授权
    • Beta voltaic semiconductor diode fabricated from a radioisotope
    • 由放射性同位素制造的β-伏安半导体二极管
    • US08937360B1
    • 2015-01-20
    • US13852009
    • 2013-03-28
    • Bryan George MoosmanRichard Lee Waters
    • Bryan George MoosmanRichard Lee Waters
    • H01L43/00G21H1/02
    • G21H1/02G21H1/06
    • In one preferred embodiment, a semiconductor diode includes a first layer formed with a p-type semiconductor, a second layer formed with an n-type semiconductor, and a third active depletion layer contained between the first and second layers. The third layer is formed with a radioisotope of the p-type and n-type semiconductors (preferably Si 32) such that initial emission of beta particles begins in the active depletion region and substantially all of the emitted beta particles are contained within the first, second and third layers during operation. The p-type and n-type layers each have sufficient depth to contain substantially all of beta particles emitted from the depletion layer. The depth of each of the p-type and n-type layers is substantially equal to or greater than the maximum beta emission depth of the radioisotope.
    • 在一个优选实施例中,半导体二极管包括由p型半导体形成的第一层,由n型半导体形成的第二层和包含在第一和第二层之间的第三有源耗尽层。 第三层由p型和n型半导体(优选Si 32)的放射性同位素形成,使得β粒子的初始发射在活性耗尽区开始,并且基本上所有发射的β粒子都包含在第一, 第二和第三层。 p型和n型层各自具有足够的深度以包含从耗尽层发射的基本上所有的β粒子。 p型和n型层中的每一个的深度基本上等于或大于放射性同位素的最大β发射深度。
    • 30. 发明申请
    • RADIOISOTOPE FUELED ROTARY ACTUATOR FOR MICRO AND NANO VEHICLES
    • 用于微型和纳粹车辆的放射性燃料旋转执行器
    • US20120175999A1
    • 2012-07-12
    • US12819412
    • 2010-06-21
    • Court E. Rossman
    • Court E. Rossman
    • G21H1/00G21H1/02H02N1/00
    • G21H1/02H02N1/004
    • The invention provides an actuator apparatus and method where a source provides electrons to a target material wherein electrical work is performed. A beta emission process comprises a source material emitting electrons which are then captured by a target material. The actuator's source vanes rotate within an electric field between the target chutes' walls, generating torque. The principal providing torque and power is the change in energy as a vane gets closer to the outer walls. During the release and capture process, electrical work is performed which, in turn, is transferred into mechanical work in the form of rotation of the rotor. Specific applications include a radioisotope fueled rotary actuator for micro and nano air vehicles employed as the main form of propulsion.
    • 本发明提供了一种致动器装置和方法,其中源向目标材料提供电子,其中执行电工作。 β发射过程包括发射电子的源材料,然后被靶材料捕获。 致动器的源叶片在目标滑槽壁之间的电场内旋转,产生扭矩。 提供扭矩和功率的主体是当叶片更接近外壁时能量的变化。 在释放和捕获过程中,执行电工作,其又以转子的旋转的形式转移到机械作业中。 具体应用包括用作用作推进主要形式的微型和纳米级空气车辆的放射性同位素燃料旋转致动器。