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21. 发明授权

US09214644B2 Active matrix dilute source enabled vertical organic light emitting transistor 有权
标题翻译：有源矩阵稀释源启用垂直有机发光晶体管
公开(公告)号：US09214644B2
公开(公告)日：2015-12-15
申请号：US13519176
申请日：2011-12-07
申请人： Andrew Gabriel Rinzler , Mitchell Austin McCarthy , Bo Liu
发明人： Andrew Gabriel Rinzler , Mitchell Austin McCarthy , Bo Liu
IPC分类号： H01L51/52 , H01L29/16 , H01L29/78 , H01L51/05 , H01L51/10 , H01L27/32 , B82Y99/00 , H01L51/00
CPC分类号： H01L51/5203 , B82Y99/00 , H01L27/3262 , H01L27/3274 , H01L29/1606 , H01L29/7827 , H01L51/0045 , H01L51/0048 , H01L51/057 , H01L51/102 , H01L51/5296
摘要： Various embodiments are provided for dilute source enabled vertical organic light emitting transistors. In various embodiments, a display panel includes an array of pixels. In one embodiment, among others, at least one pixel includes a switching transistor and a driving transistor coupled to the switching transistor, where the driving transistor is configured to emit light responsive to activation by the switching transistor. The driving transistor may be a dilute source enabled vertical organic light emitting transistor (DS-VOLET). The switching transistor may include a dilute source enabled vertical-field effect transistor (DS-VFET). In another embodiment, a double dilute source enabled vertical-field effect transistor (DS-VFET) includes a first DS-VFET coupled to a second DS-VFET.
摘要翻译：提供了用于稀释源的垂直有机发光晶体管的各种实施例。在各种实施例中，显示面板包括像素阵列。在一个实施例中，至少一个像素包括开关晶体管和耦合到开关晶体管的驱动晶体管，其中驱动晶体管被配置为响应于开关晶体管的激活而发光。驱动晶体管可以是具有稀释源的垂直有机发光晶体管（DS-VOLET）。开关晶体管可以包括具有稀释源的垂直场效应晶体管（DS-VFET）。在另一个实施例中，双稀释源使能的垂直场效应晶体管（DS-VFET）包括耦合到第二DS-VFET的第一DS-VFET。

22. 发明授权

US09088000B2 Transistor structures and methods of fabrication thereof 有权
标题翻译：晶体管结构及其制造方法
公开(公告)号：US09088000B2
公开(公告)日：2015-07-21
申请号：US14027713
申请日：2013-09-16
申请人： TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
发明人： Nir Tessler , Moti Margalit , Oded Globerman , Roy Shenhar
IPC分类号： H01L35/24 , H01L51/05 , H01L51/00 , H01L51/50 , B82Y10/00
CPC分类号： H01L51/0545 , B82Y10/00 , H01L29/786 , H01L51/0021 , H01L51/0036 , H01L51/004 , H01L51/0043 , H01L51/0046 , H01L51/0516 , H01L51/0541 , H01L51/0558 , H01L51/057 , H01L51/102 , H01L51/5012
摘要： An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.
摘要翻译：提出了一种电子器件，例如薄膜晶体管。该装置包括与电子装置的有源元件相关联的图案化导电层。导电层具有限定间隔开的导电区域阵列的图案。该技术允许增加通过该装置的电流。

23. 发明授权

US09054339B2 Organic light emitting transistor and organic light emitting display 有权
标题翻译：有机发光晶体管和有机发光显示器
公开(公告)号：US09054339B2
公开(公告)日：2015-06-09
申请号：US14041025
申请日：2013-09-30
申请人： Samsung Display Co., Ltd.
发明人： Rang-Kyun Mok , Dae-Sung Choi , Ki-Seo Kim
IPC分类号： H01L51/52 , H01L51/05
CPC分类号： H01L51/5296 , H01L51/057
摘要： An organic light emitting transistor includes: a first electrode positioned on a substrate; a gate electrode positioned on the first electrode and including an opening formed at a center region; a first auxiliary layer positioned within the opening; an organic emission layer positioned on the first auxiliary layer and the gate electrode; a second auxiliary layer positioned on the organic emission layer; and a second electrode positioned on the second auxiliary layer.
摘要翻译：有机发光晶体管包括：位于基板上的第一电极; 位于所述第一电极上并包括形成在中心区域的开口的栅电极; 位于开口内的第一辅助层; 位于所述第一辅助层和所述栅电极上的有机发射层; 位于所述有机发射层上的第二辅助层; 以及位于第二辅助层上的第二电极。

24. 发明授权

US08900935B2 Deposition on a nanowire using atomic layer deposition 有权
标题翻译：使用原子层沉积在纳米线上沉积
公开(公告)号：US08900935B2
公开(公告)日：2014-12-02
申请号：US13013067
申请日：2011-01-25
申请人： Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
发明人： Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
IPC分类号： H01L29/775 , H01L21/336 , H01L51/05 , H01L29/78 , B82Y40/00 , H01L29/66 , H01L29/06 , H01L27/12 , H01L29/47 , H01L21/84 , B82Y30/00 , H01L51/00
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/84 , H01L21/845 , H01L27/1203 , H01L27/1211 , H01L29/42392 , H01L29/47 , H01L29/6675 , H01L29/7839 , H01L51/0048 , H01L51/0516 , H01L51/0558 , H01L51/057 , Y10S977/762 , Y10S977/938
摘要： In one exemplary embodiment, a method includes: providing a semiconductor device having a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate; and performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film includes performing atomic layer deposition to deposit the film on at least a surface of the nanowire.
摘要翻译：在一个示例性实施例中，一种方法包括：提供具有衬底，纳米线，第一结构和第二结构的半导体器件，其中纳米线悬挂在第一结构和第二结构之间，其中第一结构和第二结构过度的底物; 以及进行原子层沉积以在所述半导体器件的至少一部分上沉积膜，其中进行原子层沉积以沉积所述膜包括进行原子层沉积以将所述膜沉积在所述纳米线的至少一个表面上。

25. 发明申请

US20140213006A1 METHOD FOR FORMING VERTICAL TYPE SENSOR 有权
标题翻译：形成垂直型传感器的方法
公开(公告)号：US20140213006A1
公开(公告)日：2014-07-31
申请号：US14242109
申请日：2014-04-01
申请人： National Chiao Tung University
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
IPC分类号： G01N27/327
CPC分类号： G01N27/3278 , G01N27/414 , G01N33/54373 , G01N33/5438 , H01L51/057 , H01L51/5203
摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
摘要翻译：本发明提供一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。本发明的垂直型传感器提供即时，灵敏和快速的检测。

26. 发明申请

US20140167048A1 VERTICAL THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF 有权
标题翻译：垂直薄膜晶体管及其制造方法
公开(公告)号：US20140167048A1
公开(公告)日：2014-06-19
申请号：US13919813
申请日：2013-06-17
申请人： Samsung Display Co., Lid.
发明人： Jung Hun Lee
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78642 , H01L29/6675 , H01L51/057
摘要： A vertical thin film transistor includes a substrate, a first wall, a second wall, a source electrode, a drain electrode, a semiconductor layer, a gate insulating layer, and a gate electrode. The first wall and the second walls are spaced apart from each other on the substrate. The source electrode is formed on a top surface of the first wall. The drain electrode is provided on the substrate between the first and second walls. The semiconductor layer is formed on the source electrode, a sidewall of the first wall, and the drain electrode. The gate insulating layer covers the first and second walls, the source and drain electrodes, and the semiconductor layer. The gate electrode is disposed between the first and second walls in a planar view. The vertical thin film transistor may be formed without a mask.
摘要翻译：垂直薄膜晶体管包括基板，第一壁，第二壁，源电极，漏电极，半导体层，栅极绝缘层和栅电极。第一壁和第二壁在基板上彼此间隔开。源电极形成在第一壁的顶表面上。漏极电极设置在第一和第二壁之间的衬底上。半导体层形成在源电极，第一壁的侧壁和漏电极上。栅极绝缘层覆盖第一和第二壁，源极和漏极以及半导体层。栅电极在平面图中设置在第一和第二壁之间。可以在没有掩模的情况下形成垂直薄膜晶体管。

27. 发明授权

US08723503B2 Vertical type sensor 有权
标题翻译：立式传感器
公开(公告)号：US08723503B2
公开(公告)日：2014-05-13
申请号：US13009440
申请日：2011-01-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
IPC分类号： H01L29/08 , H01L21/00 , G01N33/543 , H01L51/52 , H01L51/05 , G01N27/414
CPC分类号： G01N27/3278 , G01N27/414 , G01N33/54373 , G01N33/5438 , H01L51/057 , H01L51/5203
摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
摘要翻译：本发明提供一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。本发明的垂直型传感器提供即时，灵敏和快速的检测。

28. 发明申请

US20140061650A1 TRANSISTOR STRUCTURES AND METHODS OF FABRICATION THEREOF 有权
标题翻译：晶体管结构及其制造方法
公开(公告)号：US20140061650A1
公开(公告)日：2014-03-06
申请号：US14027713
申请日：2013-09-16
申请人： TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
发明人： Nir TESSLER , Moti MARGALIT , Oded GLOBERMAN , Roy SHENHAR
IPC分类号： H01L29/786
CPC分类号： H01L51/0545 , B82Y10/00 , H01L29/786 , H01L51/0021 , H01L51/0036 , H01L51/004 , H01L51/0043 , H01L51/0046 , H01L51/0516 , H01L51/0541 , H01L51/0558 , H01L51/057 , H01L51/102 , H01L51/5012
摘要： An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.
摘要翻译：提出了一种电子器件，例如薄膜晶体管。该装置包括与电子装置的有源元件相关联的图案化导电层。导电层具有限定间隔开的导电区域阵列的图案。该技术允许增加通过该装置的电流。

29. 发明授权

US08624224B2 Nanotube array bipolar transistors 有权
标题翻译：纳米管阵列双极晶体管
公开(公告)号：US08624224B2
公开(公告)日：2014-01-07
申请号：US12986440
申请日：2011-01-07
申请人： Alexander Kastalsky
发明人： Alexander Kastalsky
IPC分类号： H01L29/73
CPC分类号： H01L29/7317 , B82Y10/00 , B82Y15/00 , B82Y20/00 , H01L27/283 , H01L29/66265 , H01L51/0048 , H01L51/0558 , H01L51/057
摘要： Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on semiconductor wafers, the CNT-based devices can be combined with the conventional semiconductor circuit elements, thus producing hybrid devices and circuits.
摘要翻译：公布了基于碳纳米管（CNT）的器件及其制造技术。使用平面多层沉积技术和在器件处理期间纳米管导电类型的简单改变方法来提供用于大规模电路集成的简单且成本有效的技术。公开了诸如p-n二极管，类CMOS电路，双极晶体管，发光二极管和激光器的器件，由于优异的CNT电气和光学性能，它们都期望具有优于其基于半导体的对应物的性能。当在半导体晶片上制造时，CNT-基器件可以与传统的半导体电路元件组合，从而产生混合器件和电路。

30. 发明授权

US08559906B2 System and method for providing a carbon nanotube mixer 有权
标题翻译：用于提供碳纳米管混合器的系统和方法
公开(公告)号：US08559906B2
公开(公告)日：2013-10-15
申请号：US13168684
申请日：2011-06-24
申请人： Dale E. Dawson , John X. Przybysz , Maaz Aziz
发明人： Dale E. Dawson , John X. Przybysz , Maaz Aziz
IPC分类号： H04B1/26 , H04B1/28 , G06G7/16
CPC分类号： H03D7/1491 , B82Y30/00 , H01L27/283 , H01L51/057 , H03D7/1458
摘要： An embodiment of a system and method provides a carbon nanotube transistor (CNT) mixer with a low local oscillator power requirement and no inter-modulation products. Specifically, an embodiment of the system and method provides two kinds of device current-voltage (I-V) characteristics on the same integrated circuit: exponential and linear. The CNT I-V characteristics support both the ideal exponential control characteristic (determined by physics constants) and the ideal linear control characteristic (also determined by physics constants), resulting in an ideal multiplier. In other words, the CNT mixer is mathematically equivalent to an ideal multiplier. Such an ideal multiplier can be used as a mixer with low local oscillator power requirement and virtually no inter-modulation products.
摘要翻译：一种系统和方法的实施例提供了一种具有低本地振荡器功率需求并且没有互调产物的碳纳米管晶体管（CNT）混频器。具体地说，该系统和方法的一个实施例在同一集成电路上提供两种器件电流 - 电压（I-V）特性：指数和线性。 CNT I-V特性支持理想指数控制特性（由物理常数确定）和理想线性控制特性（也由物理常数确定），从而产生理想的乘数。换句话说，CNT混合器在数学上等于理想乘数。这种理想的乘法器可以用作具有低本地振荡器功率需求的混频器，并且实际上没有互调产物。

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