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21. 发明申请

US20140151636A1 SINGLE-WALLED CARBON NANOTUBES/QUANTUM DOT HYBRID STRUCTURES AND METHODS OF MAKING AND USE OF THE HYBRID STRUCTURES 有权
标题翻译：单壁碳纳米管/量子混合结构及其制备和使用混合结构的方法
公开(公告)号：US20140151636A1
公开(公告)日：2014-06-05
申请号：US14097530
申请日：2013-12-05
申请人： University of Georgia Research Foundation, Inc.
发明人： Marcus D. Lay , Pornnipa Vichchulada , Darya Asheghali
IPC分类号： H01L51/05 , H01L51/00
CPC分类号： H01L51/0566 , H01L51/0002 , H01L51/0048 , H01L51/0049 , H01L51/0545 , H01L51/105
摘要： Briefly described, embodiments of the present disclosure relate to structures including single-walled carbon nanotube/quantum dot networks, devices including the structures, and methods of making devices including the single-walled carbon nanotube/quantum dot networks.
摘要翻译：简要描述，本公开的实施例涉及包括单壁碳纳米管/量子点网络，包括该结构的器件，以及制造包括单壁碳纳米管/量子点网络的器件的方法。

22. 发明申请

US20130341570A1 METHOD FOR DISPERSING CARBON NANOTUBES USING CHONDROITIN SULFATE CATION SALT 有权
标题翻译：使用硫酸锡盐分散碳纳米管的方法
公开(公告)号：US20130341570A1
公开(公告)日：2013-12-26
申请号：US13914367
申请日：2013-06-10
申请人： Nanyang Technological University
发明人： Bee Eng Mary Chan , Liangyu Yan
IPC分类号： H01L51/00
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , C08K3/041 , H01L51/0049 , H01L51/0558 , C08L5/08 , C08K7/24
摘要： The present invention relates to a method for dispersing carbon nanotubes. The method may include contacting the carbon nanotubes with a solution containing chondroitin sulfate cation salt of formula (I) wherein R1 is MSO3 and R2 is H, or R1 is H and R2 is MSO3; M is an alkaline metal, or an alkaline earth metal further bound to a monovalent counter-anion; n is at least 20.
摘要翻译：本发明涉及分散碳纳米管的方法。该方法可以包括使碳纳米管与含有式（I）的硫酸软骨素阳离子盐的溶液接触，其中R1是MSO3，R2是H，或R1是H，R2是MSO3; M是进一步与一价抗衡阴离子结合的碱金属或碱土金属; n至少为20。

23. 发明授权

US08604559B2 Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure 有权
标题翻译：放置半导体纳米结构和包括半导体纳米结构的半导体器件的方法
公开(公告)号：US08604559B2
公开(公告)日：2013-12-10
申请号：US13077216
申请日：2011-03-31
申请人： Ali Afzali-Ardakani , Supratik Guha , Cherie R. Kagan , George S. Tulevski , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Supratik Guha , Cherie R. Kagan , George S. Tulevski , Emanuel Tutuc
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/06 , H01L31/113
CPC分类号： H01L51/0049 , B82Y10/00 , H01L51/0012
摘要： A semiconductor device includes a bonding surface, a semiconducting nanostructure including one of a nanowire and a nanocrystal, which is formed on the bonding surface, and a source electrode and a drain electrode which are formed on the nanostructure such that the nanostructure is electrically connected to the source and drain electrodes.
摘要翻译：半导体器件包括形成在接合表面上的接合表面，包括纳米线和纳米晶体之一的半导体纳米结构，以及形成在纳米结构上的源电极和漏电极，使得纳米结构电连接到源极和漏极。

24. 发明申请

US20130319528A1 ORGANIC PHOTOVOLTAIC COATINGS WITH CONTROLLED MORPHOLOGY 审中-公开
标题翻译：具有控制形态的有机光伏涂料
公开(公告)号：US20130319528A1
公开(公告)日：2013-12-05
申请号：US13498100
申请日：2010-09-24
申请人： Ling Qi , Bertrand Pavageau , Ashwin Rao
发明人： Ling Qi , Bertrand Pavageau , Ashwin Rao
IPC分类号： H01L51/00
CPC分类号： H01L51/0007 , B82Y10/00 , H01L51/0026 , H01L51/0036 , H01L51/0037 , H01L51/0049 , H01L51/4253 , H01L2251/308 , Y02E10/549
摘要： The present invention relates to a method for producing a coating based on two organic semi-conducting compounds CP and CN, respectively of type P and of type N, CN being immiscible with compound CP in the coating produced, and wherein: (A) a solution is deposited on the surface of the support, comprising compounds CP and CN in a solvent medium S capable of solvating compounds CP and CN without chemically reacting therewith, said solvent S being formed by a mixture of: a first fraction formed by a solvent or a mixture of solvents S1 capable of solvating both compounds CP or CN; and a second fraction miscible with the first fraction consisting of a solvent or a mixture of solvents S2 with a higher boiling point than that of the solvent or mixture of solvents S1 and which is capable of solvating one of the compounds CP or CN but not the other one; and (B) the solvent S present in the thereby produced deposit is removed by evaporation.
摘要翻译：本发明涉及一种基于两种分别为P型和N型的有机半导体化合物CP和CN的涂层的制备方法，CN在制备的涂层中与化合物CP不混溶，其中：（A）溶液沉积在载体的表面上，包括能够溶剂化合物CP和CN而不与其化学反应的溶剂介质S中的化合物CP和CN，所述溶剂S由以下混合物形成：由溶剂形成的第一级分或能够溶解化合物CP或CN两者的溶剂S1的混合物; 和与由溶剂或溶剂混合物S2组成的第一级分混合的第二级分，其沸点高于溶剂或溶剂混合物S1的沸点，并能够溶剂化化合物CP或CN，但不溶于另一个; 和（B）通过蒸发除去由此产生的沉积物中存在的溶剂S.

25. 发明申请

US20130140527A1 Composite material of hole-blocking polymer and electron-injection/electron-transport conjugated polymer grafted with crown ether into which metal ion is intercalated, and uses thereof in OLED and organic solar cell 有权
公开(公告)号：US20130140527A1
公开(公告)日：2013-06-06
申请号：US13489695
申请日：2012-06-06
申请人： SHOW-AN CHEN , HSIN-HUNG LU , YUN-CHUNG WU , YUN-SHENG MA , SIH-HAO LIAO
发明人： SHOW-AN CHEN , HSIN-HUNG LU , YUN-CHUNG WU , YUN-SHENG MA , SIH-HAO LIAO
IPC分类号： H01B1/12 , H01L51/46 , H01L51/54
CPC分类号： H01L51/0035 , B82Y10/00 , C08G2261/1424 , C08G2261/3142 , C08G2261/3223 , C08G2261/91 , C08K5/0091 , C08L65/00 , C08L71/02 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0049 , H01L51/4273 , H01L51/5072 , H01L51/5096 , H01L2251/308 , Y02E10/549
摘要： An water/alcohol soluble electron-injection/hole-blocking composite layer contains a conjugated polymer grafted with a side chain crown ether and with pseudo-metallic state of metal-ion stabilized by the crown ether (to reduce electron-injection barrier and facilitate electron transport), and a polymer with hole-blocking function. This composite layer is able to improve the performance of an organic light emitting diode with oxygen- and moisture-stable cathode (such as Al and Au), and the performance of an organic solar cell.

26. 发明授权

US08399279B2 Fabrication method of carbon nanotube film and sensor based on carbon nanotube film 有权
标题翻译：基于碳纳米管膜的碳纳米管膜和传感器的制造方法
公开(公告)号：US08399279B2
公开(公告)日：2013-03-19
申请号：US13176019
申请日：2011-07-05
申请人： Geunbae Lim , Taechang An
发明人： Geunbae Lim , Taechang An
IPC分类号： H01L21/02
CPC分类号： B82Y40/00 , B81B3/0021 , B81B2201/0292 , B82Y10/00 , H01L51/0049 , H01L51/0508
摘要： A method for fabricating a carbon nanotube film floating on a bottom is provided. The fabrication method of a carbon nanotube film comprises: forming electrodes on a substrate; arranging a suspension comprising a plurality of carbon nanotubes on the electrodes; and arranging the carbon nanotubes on the electrodes by applying a voltage to the electrodes.
摘要翻译：提供一种制造浮动在底部上的碳纳米管膜的方法。碳纳米管膜的制造方法包括：在基板上形成电极; 在电极上设置包含多个碳纳米管的悬浮液; 以及通过向电极施加电压将碳纳米管布置在电极上。

27. 发明申请

US20130040439A1 METHOD OF MODIFYING ELECTRICAL PROPERTIES OF CARBON NANOTUBES USING NANOPARTICLES 审中-公开
标题翻译：使用纳米颗粒改性碳纳米管的电性能的方法
公开(公告)号：US20130040439A1
公开(公告)日：2013-02-14
申请号：US13577223
申请日：2011-02-07
申请人： Jianwen Zhao , Lain-Jong Li , Peng Chen , Bee Eng Mary Chan
发明人： Jianwen Zhao , Lain-Jong Li , Peng Chen , Bee Eng Mary Chan
IPC分类号： H01L21/20 , C09K15/02 , H01B1/04 , B82Y30/00 , B82Y40/00
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , C08K3/04 , C08K9/02 , C09D7/62 , H01L51/0049 , H01L51/0558
摘要： Various embodiments relate to a method of modifying the electrical properties of carbon nanotubes. The method may include providing a substrate having carbon nanotubes deposited on a surface of the substrate, and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid. A field-effect transistor including the modified carbon nanotubes is also provided.
摘要翻译：各种实施方案涉及改变碳纳米管的电性能的方法。该方法可以包括提供具有沉积在基底表面上的碳纳米管的基底，并在碳纳米管上沉积包含纳米颗粒，其中纳米颗粒被溶解或稳定的基质和离子液体的混合物的涂层。还提供了包括改性碳纳米管的场效应晶体管。

28. 发明授权

US08273318B2 Surface modifying carbon nanotube material, manufacturing method therefor, electronic component and electronic device 有权
标题翻译：表面改性碳纳米管材料，其制造方法，电子元件和电子器件
公开(公告)号：US08273318B2
公开(公告)日：2012-09-25
申请号：US12052265
申请日：2008-03-20
申请人： Koji Asano
发明人： Koji Asano
IPC分类号： D01F9/12 , C23C8/00 , C23C14/28
CPC分类号： H01L51/0049 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/06 , C01B2202/26 , C01B2202/34 , H01L23/3677 , H01L23/373 , H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： A carbon nanotube material is exposed to ultraviolet rays, and a silicon-containing compound capable of modifying the surface of the carbon nanotube material in combination with the ultraviolet rays is supplied to thereby modify the surface of the carbon nanotube material.
摘要翻译：碳纳米管材料暴露于紫外线，并且提供能够与紫外线组合来改变碳纳米管材料的表面的含硅化合物，从而改变碳纳米管材料的表面。

29. 发明申请

US20120108075A1 Gas-Phase Functionalization of Surfaces of Microelectronic Structures 有权
标题翻译：微电子结构表面气相功能化
公开(公告)号：US20120108075A1
公开(公告)日：2012-05-03
申请号：US13344738
申请日：2012-01-06
申请人： Roy G. Gordon , Damon B. Farmer
发明人： Roy G. Gordon , Damon B. Farmer
IPC分类号： H01L21/30 , B05D5/00 , B05D3/02 , B82Y99/00 , B82Y40/00
CPC分类号： H01L51/0049 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/02 , C01F7/304 , C01P2004/13 , H01L51/057 , H01L51/0595 , Y10S977/734 , Y10S977/755 , Y10S977/842 , Y10S977/847 , Y10S977/89 , Y10T428/2918
摘要： There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700° C.
摘要翻译：提供了通过将表面暴露于至少一种包含非共价结合表面的官能化物质（例如NO 2或CH 3 ONO）的蒸气的表面而提供微电子结构的平坦表面的方法，同时提供化学官能团，以产生官能化表面。功能化表面暴露于与官能化层反应的至少一种汽相稳定物质，以形成稳定层，该稳定层使官能化层抵抗来自平面微电子表面的解吸，同时提供化学官能团。稳定的表面暴露于在稳定的平面微电子表面上沉积材料层的至少一种材料层前体物质。稳定的平面微电子表面可以在小于约700℃的峰值退火温度下退火

30. 发明申请

US20120070621A1 CONDUCTIVE FILM FORMING METHOD, CONDUCTIVE FILM FORMING APPARATUS AND CONDUCTIVE FILM 审中-公开
标题翻译：导电膜形成方法，导电膜形成装置和导电膜
公开(公告)号：US20120070621A1
公开(公告)日：2012-03-22
申请号：US13321663
申请日：2010-05-06
申请人： Tohru Nukui
发明人： Tohru Nukui
IPC分类号： B32B3/30 , C08F2/48 , B32B5/02 , B05D5/12 , B82Y30/00
CPC分类号： H01L51/444 , B82Y10/00 , H01B1/20 , H01B1/22 , H01B1/24 , H01L51/0021 , H01L51/0049 , Y02E10/549 , Y02P70/521 , Y10T428/24479
摘要： There is provided a conductive film forming method including disposing a material 2 containing a fiber-shaped conductive substance 2a and having fluidity between a substrate 3 and a mold 1 having thereon prominences and depressions 1a; reducing the fluidity of the material 2; and separating the mold 1 from the material 2.
摘要翻译：提供了一种导电膜形成方法，包括在基板3和具有突出和凹陷1a的模具1之间布置包含纤维状导电物质2a并具有流动性的材料2; 降低材料2的流动性; 并将模具1与材料2分离。

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