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    • 30. 发明申请
    • MODULAR INTERDIGITATED BACK CONTACT PHOTOVOLTAIC CELL STRUCTURE ON OPAQUE SUBSTRATE AND FABRICATION PROCESS
    • 模块化接触背光接触光源基板和制造工艺的光电池结构
    • US20160111582A1
    • 2016-04-21
    • US14980599
    • 2015-12-28
    • STMICROELECTRONICS S.R.L.
    • CATENO MARCO CAMALLERISIMONA LORENTIFABRIZIO MANGANO
    • H01L31/18H01L31/068H01L31/0224
    • H01L31/182H01L31/022441H01L31/046H01L31/0682H01L31/1872Y02E10/546Y02E10/547Y02P70/521
    • A back contact integrated photovoltaic cell includes a substrate having a dielectric surface and a patterned metal layer with parallel spaced alternately positive and negative electrode fingers forming an interdigitated two-terminal structure over the dielectric surface of the substrate. A dielectric filler may be in the interstices of separation between adjacent spaced parts of the patterned metal layer. Parallel spaced strips, alternately of p+ doped polysilicon and of n+ doped polysilicon, may top the positive and negative interdigitated electrode fingers, respectively, and form doped p-type active regions and n-type active regions of the integrated photovoltaic cell, spaced and isolated by a strip of undoped or negligibly doped polysilicon. An n− or p− doped or intrinsic semiconducting layer of at least partly crystallized silicon, forming a semiconductor region of thickness adapted to maximize absorption of photonic energy when illuminated by sunlight, may cover the interdigitated active doped regions.
    • 背面接触式集成光伏电池包括具有电介质表面的基板和图案化的金属层,其具有在基板的电介质表面上形成交错的两端结构的交替的正电极指和负电极指。 电介质填料可以在图案化的金属层的相邻间隔部分之间的间隙的间隙中。 平行间隔的条,交替的p +掺杂多晶硅和n +掺杂多晶硅,可以分别在正和负交叉指状电极指的顶部,并形成一体化光伏电池的掺杂p型有源区和n型有源区,隔离和隔离 通过未掺杂或可忽略的掺杂多晶硅的条带。 至少部分结晶的硅的n-或p-掺杂或本征半导体层,形成适于在由太阳光照射时最大化光子能吸收的厚度的半导体区域,可以覆盖交错的有源掺杂区域。