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21. 发明申请

US20110174058A1 INTEGRATION MANUFACTURING PROCESS FOR MEMS DEVICE 有权
标题翻译： MEMS器件的集成制造工艺
公开(公告)号：US20110174058A1
公开(公告)日：2011-07-21
申请号：US13072879
申请日：2011-03-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： G01M3/04 , H01L21/02
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

22. 发明授权

US07605970B2 External cavity tunable laser system formed from MEMS corner mirror 失效
标题翻译：由MEMS角镜形成的外腔可调谐激光系统
公开(公告)号：US07605970B2
公开(公告)日：2009-10-20
申请号：US10977044
申请日：2004-10-29
申请人： Long-Sun Huang , Chao-Sen Chang , Ta-Shun Chu , Son-Nan Chen
发明人： Long-Sun Huang , Chao-Sen Chang , Ta-Shun Chu , Son-Nan Chen
IPC分类号： G02B26/00
CPC分类号： H01S5/143 , H01S3/105 , H01S5/02284 , H01S5/1096
摘要： A tunable laser system is provided. The tunable laser system includes a light source, a grating, a corner mirror array, and a receiver. In which, the light source emits a beam, and the grating is located in front of the light source for reflecting the beam to form a first reflective beam. Also, the corner mirror array is located in front of the grating for receiving the first reflective beam and forms a second reflective beam accordingly. In addition, the receiver is used to receive a third reflective beam formed from reflecting the second reflective beam through the grating.
摘要翻译：提供可调激光系统。可调谐激光系统包括光源，光栅，角镜阵列和接收器。其中，光源发射光束，并且光栅位于光源的前面，用于反射光束以形成第一反射光束。此外，角镜阵列位于光栅的前面，用于接收第一反射光束并相应地形成第二反射光束。此外，接收器用于接收通过将第二反射光束反射通过光栅而形成的第三反射光束。

23. 发明授权

US07180144B2 Corner compensation method for fabricating MEMS and structure thereof 失效
标题翻译：用于制造MEMS的角补偿方法及其结构
公开(公告)号：US07180144B2
公开(公告)日：2007-02-20
申请号：US11129145
申请日：2005-05-13
申请人： Jerwei Hsieh , Weileun Fang
发明人： Jerwei Hsieh , Weileun Fang
IPC分类号： H01L27/14 , B81B7/00
CPC分类号： B81C1/00571
摘要： A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate; (c) sequentially forming a masking layer having structural openings and a photoresist layer on the conductive layer; (d) executing a photolithography for etching the photoresist layer and the masking layer to form at least one hole penetrating the photoresist layer and the masking layer; (e) etching the conductive layer and the substrate to extend the at least one hole to upper portions of the substrate; (f) removing the photoresist layer and etching the conductive layer and the substrate via the structural openings and the at least one hole respectively to form deep trench structures having different depths; (g) forming a peripheral compensation structure on a side-wall portion of the deep trench structure having the different depths; (h) removing portions of the peripheral compensation structure laterally and the substrate for exposing an uncompensated silicon structure; and (i) side etching the uncompensated silicon structure to be terminated by the peripheral compensation structure around the at least one hole.
摘要翻译：提供了一种用于制造MEMS（微机电系统）的角补偿方法。该方法包括以下步骤：（a）提供衬底; （b）在所述基板上形成导电层; （c）在所述导电层上依次形成具有结构开口的掩模层和光致抗蚀剂层; （d）执行光刻用于蚀刻光致抗蚀剂层和掩模层以形成穿透光致抗蚀剂层和掩模层的至少一个孔; （e）蚀刻所述导电层和所述基底以将所述至少一个孔延伸到所述基底的上部; （f）去除光致抗蚀剂层并分别经由结构开口和至少一个孔蚀刻导电层和基板以形成具有不同深度的深沟槽结构; （g）在具有不同深度的深沟槽结构的侧壁部分上形成外围补偿结构; （h）横向去除外围补偿结构的部分和用于暴露未补偿的硅结构的衬底; 和（i）侧面蚀刻由所述至少一个孔周围的外围补偿结构终止的未补偿硅结构。

24. 发明申请

US20050280331A1 Two-axis device and manufacturing method therefor 失效
标题翻译：双轴装置及其制造方法
公开(公告)号：US20050280331A1
公开(公告)日：2005-12-22
申请号：US10951529
申请日：2004-09-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： B81B7/02 , B81C1/00 , C23F1/00 , C23F4/00 , G02B26/08 , G02B26/10 , H02N1/00
CPC分类号： G02B26/0841 , C23F4/00 , H02N1/006
摘要： A two-axis device is provided. The two-axis device includes a first substrate having a plurality of electrodes, a first connecting layer located on the first substrate, an actuating layer, a second connecting layer and a cover. The actuating layer is connected to the first substrate via the first connecting layer and includes a circular portion, an actuating portion, a first shaft and a second shaft. The second connecting layer is connected to the actuating layer and the cover is connected to the actuating layer via the second connecting layer. In addition, a vacuum concavity is formed by the first substrate, the first connecting layer, the actuating layer, the second connecting layer and the cover. The actuating portion and the first shaft are located in the vacuum concavity, and the second shaft extends outside of the vacuum concavity.
摘要翻译：提供了两轴设备。双轴装置包括具有多个电极的第一基板，位于第一基板上的第一连接层，致动层，第二连接层和盖。所述致动层经由所述第一连接层连接到所述第一基板，并且包括圆形部分，致动部分，第一轴和第二轴。第二连接层连接到致动层，并且盖通过第二连接层连接到致动层。此外，由第一基板，第一连接层，致动层，第二连接层和盖形成真空凹部。致动部和第一轴位于真空凹部中，第二轴延伸到真空凹部的外侧。

25. 发明申请

US20050280116A1 Integration manufacturing process for MEMS device 审中-公开
标题翻译： MEMS器件集成制造工艺
公开(公告)号：US20050280116A1
公开(公告)日：2005-12-22
申请号：US11091062
申请日：2005-03-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H01L29/00
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

26. 发明申请

US20050181970A1 Clay mixture and preparation method thereof 审中-公开
标题翻译：粘土混合物及其制备方法
公开(公告)号：US20050181970A1
公开(公告)日：2005-08-18
申请号：US10884611
申请日：2004-07-02
申请人： Ching-Yao Huang , Hsi-Fu Lee , Tzu-Fan Tseng , Jeng-Yue Wu
发明人： Ching-Yao Huang , Hsi-Fu Lee , Tzu-Fan Tseng , Jeng-Yue Wu
IPC分类号： C01B33/40 , C08K3/22 , C08K3/34 , C08K5/17 , C08L101/00 , C09C1/42 , C11D3/00 , C11D7/18
CPC分类号： C09C1/42 , C01B33/40 , C01P2002/72 , C01P2004/03
摘要： A clay mixture containing aluminum compounds is provided. The clay mixture includes an aluminum compound in a range from about 10% to about 90% by weight of the clay mixture; a clay in a range from about 5% to 60% by weight of the clay mixture; and a first and a second surfactants, wherein an amount of the first and the second surfactants is in a rage from about 0.2 to about 30% by weight of the clay mixture.
摘要翻译：提供含有铝化合物的粘土混合物。粘土混合物包括在粘土混合物的约10重量％至约90重量％范围内的铝化合物; 在粘土混合物的约5重量％至60重量％范围内的粘土; 和第一和第二表面活性剂，其中第一和第二表面活性剂的量为粘土混合物的约0.2至约30重量％。

27. 发明申请

US20040192047A1 Method of pre-etching glass substrate for reducing releasing time 审中-公开
标题翻译：预先蚀刻玻璃基板以减少释放时间的方法
公开(公告)号：US20040192047A1
公开(公告)日：2004-09-30
申请号：US10794286
申请日：2004-03-03
申请人： Walsin Lihwa Corp.
发明人： Long-Sun Huang , Bing-Ru Chen , Shi-Yuan Tseng
IPC分类号： H01L021/00 , H01L021/302 , H01L021/461
CPC分类号： B81C99/008
摘要： A method of pre-etching a glass substrate for reducing a post-releasing time is provided. The method includes steps of: The glass substrate, a micro-structure and a silicon substrate are provided. The glass substrate is connected with the micro-structure. A first etching process is performed on the glass substrate for reducing the area of the glass substrate connected with the micro-structure. The micro-structure is connected with the silicon substrate and a second etching process is performed on the glass substrate for removing the micro-structure from the glass substrate.
摘要翻译：提供了一种预蚀刻玻璃基板以减少释放时间的方法。该方法包括以下步骤：提供玻璃基板，微结构和硅基板。玻璃基板与微结构连接。在玻璃基板上进行第一蚀刻处理，以减少与微结构连接的玻璃基板的面积。微结构与硅衬底连接，并且在玻璃衬底上执行第二蚀刻工艺以从玻璃衬底去除微结构。

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