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21. 发明申请

US20060086704A1 Laser beam processing method and laser beam processing machine 有权
标题翻译：激光束加工方法和激光束加工机
公开(公告)号：US20060086704A1
公开(公告)日：2006-04-27
申请号：US11255999
申请日：2005-10-24
申请人： Yusuke Nagai , Satoshi Kobayashi
发明人： Yusuke Nagai , Satoshi Kobayashi
IPC分类号： B23K26/38
CPC分类号： B23K26/083 , B23K26/0604 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/38 , B23K26/40 , B23K26/53 , B23K26/702 , B23K2101/40 , B23K2103/50
摘要： A laser beam processing method for forming deteriorated layers along a dividing line in the inside of a workpiece by applying a pulse laser beam of a wavelength capable of passing through the workpiece along the dividing line formed on the workpiece, wherein a plurality of pulse laser beams are applied with a predetermined space therebetween in the width direction of the dividing line to form a plurality of parallel deteriorated layers along the dividing line.
摘要翻译：一种激光束处理方法，用于通过沿着形成在工件上的分割线施加能够穿过工件的波长的脉冲激光束，沿着工件内部的分割线形成劣化层，其中多个脉冲激光束在分割线的宽度方向上施加预定的间隔，沿着分割线形成多个平行的劣化层。

22. 发明申请

US20050006361A1 Machining apparatus utilizing laser beam 审中-公开
标题翻译：使用激光束的加工设备
公开(公告)号：US20050006361A1
公开(公告)日：2005-01-13
申请号：US10885311
申请日：2004-07-07
申请人： Satoshi Kobayashi , Yusuke Nagai
发明人： Satoshi Kobayashi , Yusuke Nagai
IPC分类号： B23K26/00 , B23K26/06 , B23K26/067 , B23K26/40 , B23K101/40 , H01L21/301
CPC分类号： B23K26/0617 , B23K26/0676 , B23K26/40 , B23K26/53 , B23K26/55 , B23K2101/40 , B23K2103/50
摘要： A machining apparatus utilizing a laser beam, the machining apparatus being capable of efficiently forming a deterioration zone of a required thickness along a division line. A laser beam from laser beam generation means is focused not to a single focused spot, but to at least two focused spots displaced in the direction of an optical axis.
摘要翻译：利用激光束的加工装置，该加工装置能够沿分割线有效地形成所需厚度的退化区域。来自激光束产生装置的激光束不聚焦到单个聚焦光点，而是聚焦到在光轴方向上移位的至少两个聚焦光点。

23. 发明申请

US20080128953A1 Workpiece dividing method utilizing laser beam 审中-公开
标题翻译：使用激光束的工件分割方法
公开(公告)号：US20080128953A1
公开(公告)日：2008-06-05
申请号：US11984529
申请日：2007-11-19
申请人： Yusuke Nagai , Satoshi Kobayashi , Hitoshi Hoshino
发明人： Yusuke Nagai , Satoshi Kobayashi , Hitoshi Hoshino
IPC分类号： B29C35/08
CPC分类号： C03B33/074 , B23K26/364 , B23K26/40 , B23K26/53 , B23K26/57 , B23K2101/40 , B23K2103/50 , B23K2103/52 , C03B33/023 , C03B33/102
摘要： A workpiece dividing method comprising applying a laser beam from one surface side of a workpiece permeable to the laser beam. The laser beam applied from the one surface side of the workpiece is focused onto the other surface of the workpiece or its vicinity to deteriorate a region ranging from the other surface of the workpiece to a predetermined depth. The deterioration of the workpiece is substantially melting and resolidification.
摘要翻译：一种工件分割方法，包括从可透过激光束的工件的一个表面侧施加激光束。从工件的一个表面侧施加的激光束聚焦在工件的其他表面或其附近，从而使从工件的另一个表面到预定深度的区域劣化。工件的劣化基本上是熔化和再凝固。

24. 发明授权

US07279403B2 Plate-like workpiece dividing apparatus 有权
标题翻译：板状工件分割装置
公开(公告)号：US07279403B2
公开(公告)日：2007-10-09
申请号：US10869930
申请日：2004-06-18
申请人： Yusuke Nagai , Satoshi Kobayashi
发明人： Yusuke Nagai , Satoshi Kobayashi
IPC分类号： H01L21/301 , H01L21/78 , B26F3/00
CPC分类号： H01L21/67132 , H01L21/67092 , H01L21/78 , H01L2221/68322 , Y10T225/325 , Y10T225/379
摘要： Disclosed herein is a dividing apparatus for dividing a plate-like workpiece, which is put on the top surface of a protective tape affixed to an annular frame and which has reduced strength along dividing lines. The apparatus includes a frame holder for holding the annular frame, a tape expander for expanding the protective tape, a detector for detecting the plate-like workpiece, a divider for pressing dividing lines to divide the workpiece into chips along the lines detected by the detector, a device for pushing up divided chips through the protective tape, and a device for picking up pushed up chips.
摘要翻译：这里公开了一种用于分割板状工件的分割装置，其被放置在固定在环形框架上的保护带的顶表面上，并且沿分割线具有减小的强度。该装置包括用于保持环形框架的框架保持器，用于扩展保护带的扩张器，用于检测板状工件的检测器，用于按分割线按压分割线将工件沿着由检测器检测到的线分成芯片的分隔器，用于通过保护带推动分割的芯片的装置，以及用于拾取推入的芯片的装置。

25. 发明申请

US20050059183A1 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US20050059183A1
公开(公告)日：2005-03-17
申请号：US10936679
申请日：2004-09-09
申请人： Yusuke Nagai , Masashi Aoki , Satoshi Kobayashi
发明人： Yusuke Nagai , Masashi Aoki , Satoshi Kobayashi
IPC分类号： B23K26/00 , B23K26/40 , B23K101/40 , H01L21/00 , H01L21/301
CPC分类号： H01L21/67132 , H01L21/67092
摘要： A wafer processing method for dividing a wafer having optical devices that are formed in a plurality of areas sectioned by dividing lines formed in a lattice pattern on the front surface, along the dividing lines, comprising a laser beam application step of applying a laser beam capable of passing through the wafer along the dividing lines to form deteriorated layers having a predetermined depth from the back surface of the wafer; a protective sheet affixing step of affixing a protective sheet to the front surface of the wafer having the deteriorated layers formed therein; a dividing step of dividing the wafer having the protective sheet affixed to the front surface along the deteriorated layers; and a grinding step of grinding the back surface of the wafer divided along the deteriorated layers in a state of the protective sheet being affixed to the wafer, to remove the deteriorated layers.
摘要翻译：一种晶片处理方法，用于沿着分割线分割形成在由表面上形成为格子图案的分割线划分的多个区域中的光学器件的晶片，包括激光束施加步骤，该激光束施加步骤施加能够沿着分割线穿过晶片以形成从晶片的后表面具有预定深度的劣化层; 保护片固定步骤，其将保护片固定在其中形成有劣化层的晶片的前表面; 分割步骤，沿着劣化层分割具有固定在前表面上的保护片的晶片; 以及在保护片固定在晶片上的状态下研磨沿劣化层分割的晶片的背面的研磨工序，除去劣化层。

26. 发明授权

US07223937B2 Laser beam processing method and laser beam processing machine 有权
标题翻译：激光束加工方法和激光束加工机
公开(公告)号：US07223937B2
公开(公告)日：2007-05-29
申请号：US11255999
申请日：2005-10-24
申请人： Yusuke Nagai , Satoshi Kobayashi
发明人： Yusuke Nagai , Satoshi Kobayashi
IPC分类号： B23K26/38 , B23K26/067
CPC分类号： B23K26/083 , B23K26/0604 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/38 , B23K26/40 , B23K26/53 , B23K26/702 , B23K2101/40 , B23K2103/50
摘要： A laser beam processing method for forming deteriorated layers along a dividing line in the inside of a workpiece by applying a pulse laser beam of a wavelength capable of passing through the workpiece along the dividing line formed on the workpiece, wherein a plurality of pulse laser beams are applied with a predetermined space therebetween in the width direction of the dividing line to form a plurality of parallel deteriorated layers along the dividing line.
摘要翻译：一种激光束处理方法，用于通过沿着形成在工件上的分割线施加能够穿过工件的波长的脉冲激光束，沿着工件内部的分割线形成劣化层，其中多个脉冲激光束在分割线的宽度方向上施加预定的间隔，沿着分割线形成多个平行的劣化层。

27. 发明申请

US20050009301A1 Semiconductor wafer dividing method utilizing laser beam 有权
标题翻译：采用激光束的半导体晶片分割方法
公开(公告)号：US20050009301A1
公开(公告)日：2005-01-13
申请号：US10870053
申请日：2004-06-18
申请人： Yusuke Nagai , Satoshi Kobayashi
发明人： Yusuke Nagai , Satoshi Kobayashi
IPC分类号： B23K26/40 , H01L21/301
CPC分类号： B23K26/40 , B23K26/53 , B23K26/57 , B23K2101/40 , B23K2103/50
摘要： A method which can divide a semiconductor wafer sufficiently precisely along a street by use of a laser beam, while fully avoiding or suppressing contamination of circuits formed in rectangular regions on the face of the semiconductor water, and without causing chipping to the rectangular regions on the face. A laser beam is applied from beside one of the back and the face of a semiconductor substrate and focused onto the other of the back and the face of the semiconductor substrate, or the vicinity thereof, to partially deteriorate at least a zone ranging from the other of the back and the face of the semiconductor substrate to a predetermined depth.
摘要翻译：可以通过使用激光束沿着街道充分精确地分割半导体晶片的方法，同时完全避免或抑制在半导体水的表面上形成的矩形区域中形成的电路的污染，并且不会导致半导体晶片上的矩形区域的碎片面对。激光束从半导体衬底的背面和表面之一施加，并且聚焦到半导体衬底的背面和表面的另一个或其附近，以至少部分地劣化从另一个区域的半导体衬底的背面和表面到预定深度。

28. 发明授权

US07141443B2 Semiconductor wafer dividing method utilizing laser beam 有权
标题翻译：采用激光束的半导体晶片分割方法
公开(公告)号：US07141443B2
公开(公告)日：2006-11-28
申请号：US10870053
申请日：2004-06-18
申请人： Yusuke Nagai , Satoshi Kobayashi
发明人： Yusuke Nagai , Satoshi Kobayashi
IPC分类号： H01L21/00
CPC分类号： B23K26/40 , B23K26/53 , B23K26/57 , B23K2101/40 , B23K2103/50
摘要： A method which can divide a semiconductor wafer sufficiently precisely along a street by use of a laser beam, while fully avoiding or suppressing contamination of circuits formed in rectangular regions on the face of the semiconductor water, and without causing chipping to the rectangular regions on the face. A laser beam is applied from beside one of the back and the face of a semiconductor substrate and focused onto the other of the back and the face of the semiconductor substrate, or the vicinity thereof, to partially deteriorate at least a zone ranging from the other of the back and the face of the semiconductor substrate to a predetermined depth.
摘要翻译：可以通过使用激光束沿着街道充分精确地分割半导体晶片的方法，同时完全避免或抑制在半导体水的表面上形成的矩形区域中形成的电路的污染，并且不会导致半导体晶片上的矩形区域的碎片面对。激光束从半导体衬底的背面和表面之一施加，并且聚焦到半导体衬底的背面和表面的另一个或其附近，以至少部分地劣化从另一个区域的半导体衬底的背面和表面到预定深度。

29. 发明申请

US20050282359A1 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US20050282359A1
公开(公告)日：2005-12-22
申请号：US11151526
申请日：2005-06-14
申请人： Yusuke Nagai , Satoshi Kobayashi , Masaru Nakamura
发明人： Yusuke Nagai , Satoshi Kobayashi , Masaru Nakamura
IPC分类号： B23K26/40 , B28D5/00 , H01L21/30 , H01L21/304 , H01L21/78
CPC分类号： H01L21/304 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , H01L21/78 , H01L2221/6834
摘要： A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer on the side of the back surface of a position at a distance corresponding to the final thickness of the chip from the front surface of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines from the back surface of the wafer; a dividing step for dividing the wafer into individual chips along the dividing lines by applying external force to the wafer in which the deteriorated layer has been formed along the dividing lines; and a back surface grinding step for grinding the back surface of the wafer divided into individual chips to the final thickness of the chip.
摘要翻译：一种晶片处理方法，其特征在于，将沿着划分线将在前表面上形成的划分线的划分线的区域的功能元件分割为各个芯片，所述晶片处理方法包括在劣化层形成步骤中形成劣化层通过施加能够从晶片的背面沿着划分线穿过晶片的激光束，从与晶片的前表面相对应的与芯片的最终厚度相对应的距离的位置的背面; 分割步骤，通过沿着分割线向已经形成有劣化层的晶片施加外力，沿着分割线将晶片分割成单个芯片; 以及后表面研磨步骤，用于将分成单个芯片的晶片的背面研磨至芯片的最终厚度。

30. 发明申请

US20050061788A1 Laser beam machine 审中-公开
标题翻译：激光束机
公开(公告)号：US20050061788A1
公开(公告)日：2005-03-24
申请号：US10938724
申请日：2004-09-13
申请人： Yusuke Nagai , Satoshi Kobayashi
发明人： Yusuke Nagai , Satoshi Kobayashi
IPC分类号： B23K26/06 , B23K26/00 , B23K26/14 , B23K26/40 , B23K26/42 , B23Q11/14 , G02B7/00 , H01L21/78
CPC分类号： G02B7/008 , B23K26/40 , B23K26/703 , B23K2103/50
摘要： A laser beam machine comprising a workpiece holding means for holding a workpiece and a laser beam application means comprising a condenser for applying a laser beam to the workpiece held on the workpiece holding means, wherein the machine further comprises thermostatic means for maintaining the temperature of a case for housing the condenser lenses of the condenser constant.
摘要翻译：一种激光束机，包括用于保持工件的工件保持装置和激光束施加装置，该激光束施加装置包括用于将激光束施加到被保持在工件保持装置上的工件的冷凝器，其中该机器还包括恒温装置，用于容纳聚光镜的聚光镜的情况恒定。

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