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21. 发明授权

US06461528B1 Method of fabricating lateral nanopores, directed pore growth and pore interconnects and filter devices using the same 失效
标题翻译：制造侧向纳米孔的方法，定向孔生长和孔互连以及使用其的过滤装置
公开(公告)号：US06461528B1
公开(公告)日：2002-10-08
申请号：US09699114
申请日：2000-10-27
申请人： Axel Scherer , Theodore Doll , Thomas Hoffman
发明人： Axel Scherer , Theodore Doll , Thomas Hoffman
IPC分类号： B31D300
CPC分类号： B01L3/5082 , B01J2219/00317 , B01J2219/00783 , B01J2219/00844 , B01J2219/00907 , B01L2200/12 , B82Y15/00 , C40B60/14 , G01Q80/00
摘要： Lateral pores in a thin metal film as well as fabricating branching and expanding ore arrays can be fabricated by a method of growing long pores laterally underneath a ask by use of stress compliant masks or varying the anodization voltage. Applications range from use with scanning electron microscope (SEM-compatible single molecule probe stations), to nanowire fixtures and to the use with a “pixelating, nonscanning” near field optical microscope (NOM). Pores are defined by conventional anodization vertically into the underlying membrane of preporous material through any overlying masking layers. The general solution is to utilize mechanically stable masks that withstand the stress during anodization and counteract the pore formation stress to lead to good pore ordering and directed growth. Multilayer masks are well suited for this. With a composition of materials having different elastic properties, tensile stress can be matched to counteract compressive stress caused by porous material growth. The boundary stress problem between preporous and porous material is solved by using a planarizing mask material that provides locally increased masking layer thickness at the critical boundary between nonporous and porous material in the film.
摘要翻译：薄金属膜中的侧向孔以及制造分支和扩展的矿石阵列可以通过使用应力柔顺掩模或改变阳极氧化电压在问题下横向生长长孔的方法来制造。应用范围从使用扫描电子显微镜（SEM兼容单分子探针站）到纳米线夹具以及使用“像素化，非选择”近场光学显微镜（NOM）。通过常规的阳极氧化，通过任何叠加的掩蔽层将孔定义为预浸材料的下面的膜。一般的解决方案是利用在阳极氧化过程中承受应力的机械稳定的掩模，并抵消孔隙形成应力以导致良好的孔排序和定向生长。多层面罩非常适合这一点。通过具有不同弹性特性的材料组成，拉伸应力可以匹配以抵消由多孔材料生长引起的压缩应力。通过使用在膜中无孔和多孔材料的临界边界处提供局部增加的掩蔽层厚度的平面化掩模材料来解决预型和多孔材料之间的边界应力问题。

22. 发明授权

US08482043B2 Method for improving transistor performance through reducing the salicide interface resistance 有权
公开(公告)号：US08482043B2
公开(公告)日：2013-07-09
申请号：US12655341
申请日：2009-12-29
申请人： Anand Murthy , Boyan Boyanov , Glenn A Glass , Thomas Hoffman
发明人： Anand Murthy , Boyan Boyanov , Glenn A Glass , Thomas Hoffman
IPC分类号： H01L21/00
CPC分类号： H01L29/7848 , H01L21/28518 , H01L21/823807 , H01L21/823814 , H01L29/0653 , H01L29/0847 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/41725 , H01L29/6628 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7833 , H01L29/7842 , Y10S438/933
摘要： An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.

23. 发明授权

US06709722B2 Method for producing decorative panels for use in vehicle interiors, and decorative panel 失效
标题翻译：用于制造用于车辆内部的装饰板的方法和装饰板
公开(公告)号：US06709722B2
公开(公告)日：2004-03-23
申请号：US09852680
申请日：2001-05-11
申请人： Matthias Goldschmid , Thomas Hoffman
发明人： Matthias Goldschmid , Thomas Hoffman
IPC分类号： A01N300
CPC分类号： B32B9/02 , B32B29/00 , B44C1/10 , B44C5/06 , B60R13/0206 , Y10T428/31895
摘要： A method for producing decorative panels for use in vehicle interiors. A layer 3 of plant components, such as leaves 6, is glued onto a base layer 2, formed of superposed layers of sized paper and blank veneer sheets disposed on a metal or plastic carrier 1, whose shape allows it to be mounted to dashboards and/or the side panels of the interior. A transparent varnish layer 4 is then applied to the layer of plant components.
摘要翻译：一种用于制造用于车辆内部的装饰板的方法。植物成分（例如叶片6）的层3被胶合到基底层2上，基底层2由设置在金属或塑料载体1上的尺寸大小的纸和空白镶嵌片的重叠层形成，其形状允许其安装到仪表板和 /或内部的侧板。然后将透明清漆层4施加到植物组分层上。

24. 发明申请

US20130302961A1 METHOD FOR IMPROVING TRANSISTOR PERFORMANCE THROUGH REDUCING THE SALICIDE INTERFACE RESISTANCE 有权
公开(公告)号：US20130302961A1
公开(公告)日：2013-11-14
申请号：US13931678
申请日：2013-06-28
申请人： Anand Murthy , Boyan Boyanov , Glen A. Glass , Thomas Hoffman
发明人： Anand Murthy , Boyan Boyanov , Glen A. Glass , Thomas Hoffman
IPC分类号： H01L29/66
CPC分类号： H01L29/7848 , H01L21/28518 , H01L21/823807 , H01L21/823814 , H01L29/0653 , H01L29/0847 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/41725 , H01L29/6628 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7833 , H01L29/7842 , Y10S438/933
摘要： An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.

25. 发明申请

US20070057457A1 Therapy puzzle 审中-公开
标题翻译：治疗难题
公开(公告)号：US20070057457A1
公开(公告)日：2007-03-15
申请号：US11519262
申请日：2006-09-12
申请人： Thomas Hoffman
发明人： Thomas Hoffman
IPC分类号： A63F9/08
CPC分类号： A63F9/10 , A63F11/0025 , A63F2003/00899 , A63F2003/00927 , A63F2009/0007 , A63F2009/1016 , A63F2009/1077 , A63F2250/481 , A63F2250/486
摘要： A rehabilitation device for exercising and rehabilitating a hand after an injury is disclosed, wherein the rehabilitation device includes a main body, a plurality of puzzle pieces, and a plurality of removal devices having different shaped handles adapted to be held using different types of grips.
摘要翻译：公开了一种用于在受伤后行使和修复手的康复装置，其中所述康复装置包括主体，多个拼块，以及具有不同形状手柄的多个移除装置，其适于使用不同类型的手柄保持。

26. 发明授权

US4919972A Process for surface modification of polymer articles 失效
标题翻译：聚合物制品的表面改性方法
公开(公告)号：US4919972A
公开(公告)日：1990-04-24
申请号：US225448
申请日：1988-07-28
申请人： Neal Conrad , Michael T. Burchill , Joseph Silbermann , Thomas Hoffman , Maurice Bourrel
发明人： Neal Conrad , Michael T. Burchill , Joseph Silbermann , Thomas Hoffman , Maurice Bourrel
IPC分类号： B05C3/18 , B05C9/02 , B05D1/18 , B05D1/20 , B05D7/02 , C08J7/06
CPC分类号： B05D7/02 , B05C3/18 , B05C9/02 , B05D1/18 , B05D1/20 , C08J7/065
摘要： A composition and process for modifying the surface region of a polymer article. The composition is a mixture of a resin surface modifier ingredient, a resin-swellable organic solvent and a surfactant additive. The composition is contacted with the surface of a resin article, while the article is immersed in a liquid which may also contain a surfactant which is non-aggressive toward the article and immiscible with the solvent. The surfactant alters the wetting characteristics of the air-liquid, or liquid-surface modifier interfaces, or both interfaces, so that a film of the modifier ingredient does not form on the surface of the liquid layer.
摘要翻译：用于改性聚合物制品的表面区域的组合物和方法。该组合物是树脂表面改性剂成分，树脂溶胀性有机溶剂和表面活性剂添加剂的混合物。将组合物与树脂制品的表面接触，同时将制品浸入液体中，该液体还可含有对制品非腐蚀性且与溶剂不混溶的表面活性剂。表面活性剂改变了空气 - 液体或液体表面改性剂界面或两个界面的润湿特性，使得在液体层的表面上不形成改性剂成分的膜。

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