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21. 发明授权

US06406978B1 Method of removing silicon carbide 失效
标题翻译：去除碳化硅的方法
公开(公告)号：US06406978B1
公开(公告)日：2002-06-18
申请号：US09715420
申请日：2000-11-18
申请人： Neng-Hui Yang , Ming-Sheng Yang , Chien-Mei Wang
发明人： Neng-Hui Yang , Ming-Sheng Yang , Chien-Mei Wang
IPC分类号： H01L2130
CPC分类号： C23C16/325 , H01L21/02381 , H01L21/02488 , H01L21/02529 , H01L21/0262 , H01L21/02664 , H01L21/3065 , H01L21/31111 , H01L21/3185 , H01L21/32137 , Y10S438/931 , Y10S438/97
摘要： A method of removing silicon carbide. A silicon wafer is used as a dummy wafer for inspecting the properties of a silicon carbide thin film which is to be formed thereover. A silicon nitride layer with a thickness larger than about 1000 angstroms is formed on the dummy wafer as a base layer of the silicon carbid thin film. The silicon carbide thin film is then formed on the base layer. The property inspection of the silicon carbide thin film is performed. After the properties inspection, the silicon carbide is stripped using a high density hydrogen plasma. After the step of high density hydrogen plasma, if the remaining silicon nitride layer is thicker than about 500 angstroms, the remaining silicon nitride layer can be used as the base layer again for forming and inspecting the properties of the silicon carbide thin film. In contrast, if the remaining silicon nitride layer is thinner than about 500 angstroms, a acid solution is used to dip and remove the remaining silicon nitride layer, and the silicon wafer can then be recycled.
摘要翻译：一种去除碳化硅的方法。硅晶片用作伪晶片，用于检查将在其上形成的碳化硅薄膜的性质。在作为硅碳化物薄膜的基底层的虚设晶片上形成厚度大于约1000埃的氮化硅层。然后在基底层上形成碳化硅薄膜。执行碳化硅薄膜的性能检查。在进行性能检查后，使用高密度氢等离子体去除碳化硅。在高密度氢等离子体的步骤之后，如果剩余的氮化硅层厚于约500埃，则剩余的氮化硅层可再次用作基底层，以形成和检查碳化硅薄膜的性质。相比之下，如果剩余的氮化硅层比约500埃更薄，则使用酸溶液来浸渍和除去剩余的氮化硅层，然后可以再循环硅晶片。

22. 发明授权

US06365527B1 Method for depositing silicon carbide in semiconductor devices 失效
标题翻译：在半导体器件中沉积碳化硅的方法
公开(公告)号：US06365527B1
公开(公告)日：2002-04-02
申请号：US09684498
申请日：2000-10-06
申请人： Neng-Hui Yang , Ming-Sheng Yang
发明人： Neng-Hui Yang , Ming-Sheng Yang
IPC分类号： H01L2131
CPC分类号： C23C16/56 , C23C16/325 , H01L21/3105 , H01L21/314 , Y10S438/931
摘要： A silicon carbide film is formed in a manner which avoids the high level contents of oxygen by depositing the film in at least two consecutive in-situ steps. Each step comprises plasma enhanced chemical vapor deposition (PECVD) of silicon carbride and ammonia plasma treatment to remove oxygen contained in the deposit silicon carbide. The disclosed method is found to enhance several insulation properties of the silicon carbide film and can be easily adapted into production-level IC processing.
摘要翻译：通过在至少两个连续的原位步骤中沉积膜来避免氧含量高的方式形成碳化硅膜。每个步骤包括硅碳钢的等离子体增强化学气相沉积（PECVD）和氨等离子体处理以去除沉积碳化硅中所含的氧。发现所公开的方法提高了碳化硅膜的几种绝缘性能，并且可以容易地适应于生产级IC处理。

23. 发明授权

US06670715B2 Bilayer silicon carbide based barrier 有权
公开(公告)号：US06670715B2
公开(公告)日：2003-12-30
申请号：US09683245
申请日：2001-12-05
申请人： Neng-Hui Yang , Cheng-Yuan Tsai , Hsin-Chang Wu
发明人： Neng-Hui Yang , Cheng-Yuan Tsai , Hsin-Chang Wu
IPC分类号： H01L2348
CPC分类号： H01L21/76832 , H01L21/3148 , H01L21/76834 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A bilayer SiC-based barrier is formed over a metallic wiring layer and a first dielectric layer. The bilayer SiC-based barrier consists of a nitrogen-doped SiC bottom layer and an oxygen-doped SiC top layer. The nitrogen-doped SiC bottom layer has a minimum thickness to prevent metal atoms of the metallic wiring layer from diffusing out to a second dielectric layer and, at the same time, avoid oxygen atoms of the oxygen-doped SiC top layer from diffusing into the metallic wiring layer.

24. 发明授权

US06861104B2 Method of enhancing adhesion strength of BSG film to silicon nitride film 有权
标题翻译：提高BSG膜对氮化硅膜的粘附强度的方法
公开(公告)号：US06861104B2
公开(公告)日：2005-03-01
申请号：US10063896
申请日：2002-05-22
申请人： Hsin-Chang Wu , Cheng-Yuan Tsai , Yu-Wen Fang , Neng-Hui Yang
发明人： Hsin-Chang Wu , Cheng-Yuan Tsai , Yu-Wen Fang , Neng-Hui Yang
IPC分类号： H01L21/308 , H01L21/316 , B05D3/06 , C23C14/10 , C23C14/14 , H01L21/306 , H01L21/473 , H05H1/46
CPC分类号： H01L21/02129 , H01L21/02315 , H01L21/3081 , H01L21/31625
摘要： A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma such as ozone plasma. A thick BSG film is then deposited onto the treated surface of the silicon nitride film. By pre-treating the silicon nitride film with ozone plasma for about 60 seconds, an increase of near 50% of Kapp of the BSG film is obtained.
摘要翻译：提供了一种提高硼硅酸盐玻璃（BSG）膜对氮化硅膜的粘附强度的方法。提供其上形成有氮化硅膜的半导体衬底。然后将氮化硅膜暴露于含氧等离子体如臭氧等离子体。然后将厚的BSG膜沉积在氮化硅膜的处理表面上。通过用臭氧等离子体预处理氮化硅膜约60秒，可获得BSG膜的Kapp近50％的增加。

25. 发明授权

US06653204B1 Method of forming a shallow trench isolation structure 失效
标题翻译：形成浅沟槽隔离结构的方法
公开(公告)号：US06653204B1
公开(公告)日：2003-11-25
申请号：US10248749
申请日：2003-02-14
申请人： Hsin-Chang Wu , Neng-Hui Yang , Cheng-Yuan Tsai , Wen-Hsun Lin
发明人： Hsin-Chang Wu , Neng-Hui Yang , Cheng-Yuan Tsai , Wen-Hsun Lin
IPC分类号： H01L2176
CPC分类号： H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A pad oxide layer and a silicon nitride (SiN) layer are sequentially formed on a silicon substrate. An etching process is then performed to form a trench in the silicon substrate. A sub-atmospheric chemical vapor deposition (SACVD) process is performed to selectively form a first dielectric layer on exposed portions of the silicon substrate within the trench to fill portions of the trench thereafter. Finally, a high density plasma chemical vapor deposition (HDPCVD) process is performed to form a second dielectric layer to fill the remaining space of the trench and cover the silicon substrate.
摘要翻译：衬垫氧化物层和氮化硅（SiN）层依次形成在硅衬底上。然后进行蚀刻工艺以在硅衬底中形成沟槽。执行亚大气压化学气相沉积（SACVD）工艺以选择性地在沟槽内的硅衬底的暴露部分上形成第一介电层，以此之后填充部分沟槽。最后，进行高密度等离子体化学气相沉积（HDPCVD）工艺以形成第二介质层以填充沟槽的剩余空间并覆盖硅衬底。

26. 发明授权

US06521545B1 Method of a surface treatment on a fluorinated silicate glass film 有权
标题翻译：氟化硅玻璃膜上的表面处理方法
公开(公告)号：US06521545B1
公开(公告)日：2003-02-18
申请号：US09682822
申请日：2001-10-23
申请人： Neng-Hui Yang , Chinh-Fu Lin , Yi-Fang Cheng , Cheng-Yuan Tsai
发明人： Neng-Hui Yang , Chinh-Fu Lin , Yi-Fang Cheng , Cheng-Yuan Tsai
IPC分类号： H01L2126
CPC分类号： H01L21/3105
摘要： The invention shows a method of a surface treatment on a fluorine silicate glass film. At first a fluorine silicate glass layer is deposited on a semiconductor wafer. Partial fluorine ions in the fluorine silicate glass layer are in-situ removed to form a silicon oxide layer of a pre-determined thickness. Then, a photoresist layer is coated on the silicon oxide layer. After an exposing process, a pre-determined latent pattern is formed in the photoresist layer. Finally, after a developing process, the pre-determined latent pattern of the photoresist is removed so as to expose corresponding portions of the silicon oxide layer underneath the latent pattern of the photoresist layer. As a result, the present invention solves a problem that fluorine ions in the fluorine silicate glass layer 24 diffuse to a surface of the fluorine silicate glass layer 24 to combine with water to form hydrofluoric acid, that contaminates the photoresist and leads to reliability issues.
摘要翻译：本发明示出了在氟硅玻璃膜上进行表面处理的方法。首先，在半导体晶片上沉积氟硅酸盐玻璃层。氟硅玻璃层中的部分氟离子被原位去除以形成预定厚度的氧化硅层。然后，将光致抗蚀剂层涂覆在氧化硅层上。在曝光处理之后，在光致抗蚀剂层中形成预定的潜像。最后，在显影处理之后，去除光致抗蚀剂的预定潜在图案，以暴露在光致抗蚀剂层的潜在图案之下的氧化硅层的相应部分。结果，本发明解决了氟硅玻璃层24中的氟离子扩散到氟硅酸盐玻璃层24的表面，与水结合形成氢氟酸的问题，污染光致抗蚀剂并导致可靠性问题。

27. 发明授权

US06429152B1 Method of forming a thin film on a semiconductor wafer 有权
标题翻译：在半导体晶片上形成薄膜的方法
公开(公告)号：US06429152B1
公开(公告)日：2002-08-06
申请号：US09885043
申请日：2001-06-21
申请人： Neng-Hui Yang , Ming-Sheng Yang
发明人： Neng-Hui Yang , Ming-Sheng Yang
IPC分类号： H01L21477
CPC分类号： H01L21/02123 , C23C16/0245 , C23C16/401 , C23C16/46 , H01L21/02208 , H01L21/02274 , H01L21/02315 , H01L21/31612
摘要： A method is given to form a thin film on a surface of a semiconductor wafer. The surface has at least a first region, containing an inner portion of the wafer, and a second region, containing an outer portion of the wafer, and slopes outward from the first region to the second region. The method starts with performing an in-situ inert gas plasma treatment on the surface of the semiconductor wafer to generate different temperatures from the first region to the second region. Different deposition rates of a precursor A from the first region to the second region are thus generated so as to form a flat surface. Then a precursor A-chemical vapor deposition (CVD) process is performed to form the thin film with the flat surface immediately after performing the inert gas plasma treatment.
摘要翻译：给出了在半导体晶片的表面上形成薄膜的方法。所述表面具有至少第一区域，其包含所述晶片的内部部分，以及第二区域，所述第二区域包含所述晶片的外部部分，并且从所述第一区域向外倾斜到所述第二区域。该方法开始于在半导体晶片的表面上进行原位惰性气体等离子体处理，以从第一区域到第二区域产生不同的温度。因此，产生从第一区域到第二区域的前体A的不同沉积速率，以形成平坦表面。然后在进行惰性气体等离子体处理之后立即进行前体A化学气相沉积（CVD）工艺以形成具有平坦表面的薄膜。

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