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    • 23. 发明授权
    • Method of forming storage nodes in a DRAM
    • 在DRAM中形成存储节点的方法
    • US06482696B2
    • 2002-11-19
    • US09901048
    • 2001-07-10
    • Young Woo Park
    • Young Woo Park
    • H01L218242
    • H01L28/91H01L21/31625H01L27/10852
    • A method of forming capacitor over bit line storage nodes in dynamic random access memory cell includes forming a multi-layered structure having at least two silicon oxide layers as a thick molding layer, e.g., to a thickness of more than 8000 Å. The at least two silicon oxide layers are disposed to have an etch speed of relatively lower-positioned silicon oxide layer to be relatively faster than that of relatively upper-positioned silicon oxide layer. Holes are then etched in the multi-layered structure, thereby reducing a width differential between the upper and lower layers.
    • 在动态随机存取存储器单元中的位线存储节点上形成电容器的方法包括形成具有至少两个氧化硅层的多层结构作为厚的成型层,例如厚度超过8000埃。 至少两个氧化硅层被设置为具有相对较低位置的氧化硅层的蚀刻速度将比相对较高位置的氧化硅层的蚀刻速度相对更快。 然后在多层结构中蚀刻孔,从而减小上层和下层之间的宽度差。