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    • 22. 发明授权
    • Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask
    • Mura缺陷检查掩模,检查mura缺陷的装置和方法以及制造光掩模的方法
    • US07538867B2
    • 2009-05-26
    • US11139970
    • 2005-05-31
    • Makoto Murai
    • Makoto Murai
    • G01N21/00
    • G01N21/956
    • Plural repetitive patterns 61 are formed on a transparent substrate 62 in the unit of a chip 65. Each of the repetitive patterns has plural pseudo mura defects 66 to which intensities of mura defects occurring in a predetermined repetitive pattern are allocated with being stepwise changed, for respective kinds of the mura defects.The mura defects are a CD Mura based on an abnormality in critical dimension of unit patterns 63 in the repetitive patterns, a Pitch Mura based on an abnormality in interval of the repetitive patterns, a Butting Mura based on a positional displacement of the repetitive patterns, and a Defect mura based on a pattern defect of unit patterns in the repetitive patterns.
    • 多个重复图案61以芯片65为单位形成在透明基板62上。每个重复图案具有多个伪色调缺陷66,以预定的重复图案分配发生的mura缺陷的强度逐步改变,为 各种mura缺陷。 基于重复图案中的单元图案63的临界尺寸的异常,基于重复图案的间隔异常的间隔Mura,基于重复图案的位置偏移的对接Mura,基于Mura缺陷, 和基于重复模式中单位模式的模式缺陷的缺陷缺陷。