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21. 发明授权

US5218224A Semiconductor device including inversion preventing layers having a plurality of impurity concentration peaks in direction of depth 失效
标题翻译：半导体装置，包括在深度方向上具有多个杂质浓度峰值的反转防止层
公开(公告)号：US5218224A
公开(公告)日：1993-06-08
申请号：US747480
申请日：1991-08-13
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： H01L21/762
CPC分类号： H01L21/76218
摘要： Buried layers of a second conductivity type are formed in a plurality of portions of a surface region of a semiconductor substrate of a first conductivity type, and an epitaxial layer of the first conductivity type is formed on the buried layers and the semiconductor substrate. A plurality of well regions of the second conductivity type are formed in the epitaxial layer in contact with the buried layers, and a region of the second conductivity type with a high impurity concentration is formed in one of the well regions in contact with the buried layers. A field insulating layer is formed on a surface region of the semiconductor substrate between the well regions. An impurity is ion-implanted in a portion substantially immediately below the field insulating film a plurality of times to form inversion preventing layers of the first conductivity type having a plurality of impurity concentration peaks. Active elements are formed in the epitaxial layer of the first conductivity type and the well regions.
摘要翻译：在第一导电类型的半导体衬底的表面区域的多个部分中形成第二导电类型的埋层，并且在掩埋层和半导体衬底上形成第一导电类型的外延层。在与掩埋层接触的外延层中形成第二导电类型的多个阱区，并且在与掩埋层接触的一个阱区中形成具有高杂质浓度的第二导电类型的区域。在阱区之间的半导体衬底的表面区域上形成场绝缘层。将杂质多次离子注入到场绝缘膜的正下方的部分，形成具有多个杂质浓度峰值的第一导电型的防反射层。有源元件形成在第一导电类型和阱区的外延层中。

22. 发明授权

US4404738A Method of fabricating an I.sup.2 L element and a linear transistor on one chip 失效
标题翻译：在一个芯片上制造I2L元件和线性晶体管的方法
公开(公告)号：US4404738A
公开(公告)日：1983-09-20
申请号：US305721
申请日：1981-09-25
申请人： Gen Sasaki , Minoru Taguchi , Koichi Kanzaki , Akihiko Furukawa
发明人： Gen Sasaki , Minoru Taguchi , Koichi Kanzaki , Akihiko Furukawa
IPC分类号： H01L27/02 , H01L21/20 , H01L21/74
CPC分类号： H01L27/0244
摘要： An integrated circuit device is provided in which an I.sup.2 L element and linear transistor are formed on a single chip such that they coexist. In this device, the base and collector regions of a vertical transistor of the I.sup.2 L element are formed such that they are deeper than the base and emitter regions of the linear transistor.
摘要翻译：提供一种集成电路器件，其中I2L元件和线性晶体管形成在单个芯片上，使得它们共存。在该器件中，I2L元件的垂直晶体管的基极和集电极区域被形成为使得它们比线性晶体管的基极和发射极区域更深。

23. 发明授权

US4377903A Method for manufacturing an I.sup.2 L semiconductor device 失效
标题翻译：制造I2L半导体器件的方法
公开(公告)号：US4377903A
公开(公告)日：1983-03-29
申请号：US236248
申请日：1981-02-18
申请人： Koichi Kanzaki , Minoru Taguchi
发明人： Koichi Kanzaki , Minoru Taguchi
IPC分类号： H01L27/082 , H01L21/033 , H01L21/331 , H01L21/8226 , H01L29/73 , H01L21/26 , H01L21/225
CPC分类号： H01L21/8226 , H01L21/033
摘要： An oxide layer is partially formed on an n-type region surrounded by a field oxide region. A base region of a switching transistor is formed in the n-type region using as a mask the oxide layer. Arsenic-doped polysilicon layers are selectively formed simultaneously on the surfaces of the oxide layer and the base region. Using the polysilicon layers as a mask, the emitter and collector regions of an injector transistor and the external base region of a switching transistor are formed in the n-type region and the base region respectively. Arsenic doped into the polysilicon layers is diffused into the base region, so that the collector regions of the switching transistor are self-aligned with the polysilicon layers.
摘要翻译：在由场氧化物区域包围的n型区域上部分地形成氧化物层。在n型区域中，使用氧化物层作为掩模形成开关晶体管的基极区域。砷氧化物掺杂多晶硅层在氧化物层和基极区域的表面上同时选择性地形成。使用多晶硅层作为掩模，分别在n型区域和基极区域中形成注入晶体管的发射极和集电极区域以及开关晶体管的外部基极区域。掺杂到多晶硅层中的砷被扩散到基极区域中，使得开关晶体管的集电极区域与多晶硅层自对准。

24. 发明授权

US07791701B2 Circuit film comprising a film substrate connected to the control board, wire board, and display panel 有权
标题翻译：电路膜包括连接到控制板，线路板和显示面板的薄膜基板
公开(公告)号：US07791701B2
公开(公告)日：2010-09-07
申请号：US11188995
申请日：2005-07-25
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： G02F1/1345
CPC分类号： G02F1/13452
摘要： A circuit film comprises a first circuit formed on a film substrate for outputting a driving signal to a display device, and a plurality of input lines formed on the film substrate. The display device includes a display panel which has first and second signal lines, a second-circuit film which has a second circuit for outputting a driving signal to the second signal line, and a control board for controlling the first and second circuits. The plurality of input lines include a first input line for inputting a control signal to the first circuit and a second input line for inputting a control signal to the second circuit. The film substrate is connected to the control board and the display panel such that a driving signal is input from the control board to the first and second circuits through the first and second input lines, respectively.
摘要翻译：电路膜包括形成在薄膜基板上的用于向显示装置输出驱动信号的第一电路和形成在薄膜基板上的多条输入线。显示装置包括具有第一和第二信号线的显示面板，具有用于向第二信号线输出驱动信号的第二电路的第二电路薄膜和用于控制第一和第二电路的控制板。多个输入线包括用于向第一电路输入控制信号的第一输入线和用于向第二电路输入控制信号的第二输入线。薄膜基板连接到控制板和显示面板，使得驱动信号分别通过第一和第二输入线从控制板输入到第一和第二电路。

25. 发明授权

US07486264B2 Liquid crystal display and liquid crystal display driving method 有权
标题翻译：液晶显示及液晶显示驱动方式
公开(公告)号：US07486264B2
公开(公告)日：2009-02-03
申请号：US11070240
申请日：2005-03-03
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： G09G3/36
CPC分类号： G02F1/13306 , G02F1/1362 , G09G3/3648 , G09G3/3677 , G09G3/3688 , G09G2310/0251 , G09G2320/0233 , G09G2320/0252
摘要： Data (gray scale levels of source driver output) of two lines are compared between an actually charged line and a pre-charged line for which actual charging and pre-charging are carried out, respectively, during the same horizontal period. Based on the result of comparison, a pre-charged period of the pre-charged line is adjusted by adjusting a pulse width of a gate driver output. In this way, the pre-charge period is reduced and thereby overcharge is avoided in pixels which are likely to be overcharged by the pre-charging.
摘要翻译：两个线路的数据（源驱动器输出的灰度级别）在相同的水平周期内分别在实际充电的线路和进行实际充电和预充电的预充电线路之间进行比较。基于比较的结果，通过调节栅极驱动器输出的脉冲宽度来调节预充电线的预充电周期。以这种方式，预充电周期减少，从而避免了通过预充电可能被过度充电的像素中的过充电。

26. 发明申请

US20060189678A1 4,5-dihydronaphtho[1,2-b]thiophene derivative 失效
标题翻译： 4,5-二氢萘并[1,2-b]噻吩衍生物
公开(公告)号：US20060189678A1
公开(公告)日：2006-08-24
申请号：US10566572
申请日：2004-07-30
申请人： Minoru Taguchi , Ryo Suzuki , Ayako Mikami
发明人： Minoru Taguchi , Ryo Suzuki , Ayako Mikami
IPC分类号： A61K31/381 , C07D333/76
CPC分类号： C07D333/74 , C07D319/18 , C07D495/04
摘要： A 4,5-dihydronaphtho[1,2-b]thiophene derivative expressed by the formula: (wherein R1 is a C1 to C10 1-hydroxyalkyl group or a C1 to C10 acyl group, and R2 and R3 separately substitute in the 6-, 7-, 8-, or 9-positions, and are each independently a hydrogen atom, a halogen atom, a C1 to C10 alkyl group, a hydroxy group, a C1 to C10 alkoxy group, a C1 to C5 alkenyloxy group, a C1 to C5 alkynyloxy group, a benzyloxy group, or the like, provided that when R1 is an acyl group and R2 is a hydrogen atom, then R3 is neither a hydrogen atom nor an acetyl group), or a pharmaceutically acceptable salt thereof This is a novel compound that is effective in reducing triglyceride levels in the liver and reducing blood glucose levels.
摘要翻译：由下式表示的4,5-二氢萘并[1,2-b]噻吩衍生物（其中R 1是C 1至C 10 - SUB- 1-羟基烷基或C 1〜C 10酰基，R 2和R 3，分别代替6-，7-，8-或9-位，并且各自独立地为氢原子，卤素原子，C 1至C 10 - 烷基，羟基，C 1〜C 10烷氧基，C 1〜C 5烷基，C 1〜烯氧基，C 1〜C 5炔氧基，苄氧基等，条件是当R 1是酰基时，和R 2是氢原子，则R 3不是氢原子也不是乙酰基）或其药学上可接受的盐这是有效的新化合物在减少肝脏中的甘油三酯水平并降低血糖水平。

27. 发明授权

US6162832A 2-Phenoxyaniline derivatives 有权
标题翻译： 2-苯氧基苯胺衍生物
公开(公告)号：US6162832A
公开(公告)日：2000-12-19
申请号：US529218
申请日：2000-04-10
申请人： Tomomi Ota , Misa Nakanishi , Izumi Aibe , Minoru Taguchi , Kazuyuki Tomisawa
发明人： Tomomi Ota , Misa Nakanishi , Izumi Aibe , Minoru Taguchi , Kazuyuki Tomisawa
IPC分类号： C07C217/90 , A61K31/135
CPC分类号： C07C217/90
摘要： A 2-phenoxyaniline derivative represented by the formula: ##STR1## wherein R.sup.1 is a hydrogen atom or a lower alkoxy group, R.sup.2 is a halogen atom or a nitro group, and R.sup.3 is a hydrogen atom or a halogen atom, or a pharmaceutically acceptable salt thereof.
摘要翻译： PCT No.PCT / JP98 / 04729 Sec。 371日期2000年04月10日 102（e）日期2000年4月10日PCT提交1998年10月20日PCT公布。公开号WO99 / 20598 日期1999年4月29日由下式表示的2-苯氧基苯胺衍生物：其中R1是氢原子或低级烷氧基，R2是卤素原子或硝基，R3是氢原子或卤原子，或其药学上可接受的盐。

28. 发明授权

US5376822A Heterojunction type of compound semiconductor integrated circuit 失效
标题翻译：复合半导体集成电路的异质结型
公开(公告)号：US5376822A
公开(公告)日：1994-12-27
申请号：US898835
申请日：1992-06-15
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： H01L27/06 , H01L29/737 , H01L27/02 , H01L27/12 , H01L29/161 , H01L29/72
CPC分类号： H01L27/0605 , H01L29/7371
摘要： A heterojunction type of compound semiconductor integrated circuit in which a PNP transistor has an N type substrate made of a first compound semiconductor for mounting the PNP transistor and for insulating positive holes transmitted in the PNP transistor, a P type second compound semiconductor limitedly arranged on a part of the substrate for functioning as an emitter of the PNP transistor, an N type third compound semiconductor arranged on both the second compound semiconductor and the substrate for functioning as a base of the PNP transistor, electrons being applied from the substrate to the third compound semiconductor, a P type fourth compound semiconductor limitedly arranged on a part of the N type third compound semiconductor, a P.sup.+ type fifth compound semiconductor arranged on the part of the fourth compound semiconductor for functioning as a collector contact layer of the PNP transistor, an emitter contact layer limitedly arranged on a second part of the second compound semiconductor for supplying positive holes to the second compound semiconductor, the surface of the emitter contact layer being the same height as that of the fifth compound semiconductor so as to form a flat surface, and an isolation region sandwiched between the emitter contact layer and the fifth compound semiconductor for electrically isolating the emitter contact layer from both the second P.sup.+ type fifth compound semiconductor and the fourth compound semiconductor.
摘要翻译：一种异质结型化合物半导体集成电路，其中PNP晶体管具有由用于安装PNP晶体管的第一化合物半导体和用于绝缘在PNP晶体管中传输的空穴的N型衬底;有限地布置在PNP晶体管上的P型第二化合物半导体用作PNP晶体管的发射极的基板的一部分，配置在第二化合物半导体和基板上的N型第三化合物半导体，用作PNP晶体管的基极，从基板施加到第三化合物半导体，有限地布置在N型第三化合物半导体的一部分上的P型第四化合物半导体，布置在用作PNP晶体管的集电极接触层的第四化合物半导体的一部分上的P +型第五化合物半导体，发射极接触层有限地布置在第二复合半导体的第二部分上用于向第二化合物半导体供给空穴的导体，发射极接触层的表面与第五化合物半导体的高度相同，以形成平坦表面，并且夹在发射极接触层和第五化合物半导体之间的隔离区化合物半导体，用于将发射极接触层与第二P +型第五化合物半导体和第四化合物半导体两者电隔离。

29. 外观设计

USD341362S Antenna element for automobiles 失效
公开(公告)号：USD341362S
公开(公告)日：1993-11-16
申请号：US693424
申请日：1991-04-30
申请人： Minoru Taguchi
设计人： Minoru Taguchi

30. 发明授权

US5184203A Semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors--all formed in a single semiconductor substrate 失效
标题翻译：具有在单个半导体衬底中形成的充电传输器件，MOSFET和双极晶体管的半导体器件
公开(公告)号：US5184203A
公开(公告)日：1993-02-02
申请号：US641920
申请日：1991-01-16
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： H01L21/761 , H01L21/339 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/146 , H01L29/762
CPC分类号： H01L27/0623 , H01L27/1057
摘要： A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor subtrate, an isolation layer of the first conductivity type formed in the epitaxial layer and extending from a surface thereof to the major surface of the semiconductor substrate. The isolation layer divides the epitaxial layer into first, second, and third islands. The device further has two wells of the first conductivity type, formed in the first and second islands, respectively, and extending to the substrate, a charge transfer device having a back gate formed of the first well, an insulated-gate FET of the first conductivity type, having a back gate formed of the second island, an insulated-gate FET of the second conductivity type, having a back gate formed of the second well, and a bipolar transistor having a collector formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device,and thus blocks noise generated in the first well. Hence, the other islands are free from the influence of the noise.

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