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21. 发明申请

US20080099837A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20080099837A1
公开(公告)日：2008-05-01
申请号：US11924175
申请日：2007-10-25
申请人： Miwako AKIYAMA , Akio Nakagawa , Yusuke Kawaguchi , Syotaro Ono , Yoshihiro Yamaguchi
发明人： Miwako AKIYAMA , Akio Nakagawa , Yusuke Kawaguchi , Syotaro Ono , Yoshihiro Yamaguchi
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/0634 , H01L29/1095 , H01L29/41766
摘要： This semiconductor device an epitaxial layer of a first conductivity type formed on a surface of the first semiconductor layer, and a base layer of a second conductivity type formed on a surface of the epitaxial layer. A diffusion layer of a first conductivity type is selectively formed in the base layer, and a trench penetrates the base layer to reach the epitaxial layer. A gate electrode is formed in the trench through the gate insulator film formed on the inner wall of the trench. A first buried diffusion layer of a second conductivity type is formed in the epitaxial layer deeper than the bottom of the gate electrode. A second buried diffusion layer connects the first buried diffusion layer and the base layer and has a resistance higher than that of the first buried diffusion layer.
摘要翻译：该半导体器件形成在第一半导体层的表面上的第一导电类型的外延层和形成在外延层的表面上的第二导电类型的基极层。在基底层中选择性地形成第一导电类型的扩散层，并且沟槽穿透基底层以到达外延层。通过形成在沟槽内壁上的栅极绝缘膜，在沟槽中形成栅电极。在比栅电极的底部更深的外延层中形成第二导电类型的第一掩埋扩散层。第二掩埋扩散层连接第一掩埋扩散层和基底层，并且具有比第一掩埋扩散层的电阻高的电阻。

22. 发明申请

US20080093347A1 Plasma cutter, and plasma cutter power supply system 有权
标题翻译：等离子切割机和等离子切割机供电系统
公开(公告)号：US20080093347A1
公开(公告)日：2008-04-24
申请号：US11907838
申请日：2007-10-18
申请人： Yoshihiro Yamaguchi , Takahiro Iriyama
发明人： Yoshihiro Yamaguchi , Takahiro Iriyama
IPC分类号： H05H1/36 , B23K9/10 , H05H1/26
CPC分类号： H05H1/36
摘要： In a main circuit 11 of the plasma cutter power supply device 6, a plurality of DC power units 14-1, . . . 14-n of low capacity are connected in parallel on their DC output sides, and are connected to a plasma torch 20. Each power unit 14-1, . . . 14-n can operate asynchronously and independently from each other. The power supply control device 6 controls the number of power units to be operated, and the intensity of output electrical current at which each of them is to be operated, according to the cutting conditions (the nature of the material to be cut, its thickness, and the cutting speed) and according to the number of power units which can be operated. If some of the power units are faulty, the power supply control device 6 controls the cutting conditions which can be accepted, according to the number of normal power units.
摘要翻译：在等离子切割器电源装置6的主电路11中，多个直流电力单元14-1，。。 14 -n的低容量在其直流输出侧并联连接，并连接到等离子体焰炬20。每个电源单元14-1，。。。 14 -n可以彼此异步和独立地操作。电源控制装置6根据切割条件（待切割材料的性质，其厚度等）来控制要操作的功率单元的数量和要各自操作的输出电流的强度，切割速度）以及可以操作的动力单元的数量。如果一些动力单元有故障，则电源控制装置6根据正常功率单元的数量来控制可以接受的切割条件。

23. 发明申请

US20080066596A1 Cutting Machine and Method of Moving Cutting Head 审中-公开
标题翻译：切割机及移动切割头的方法
公开(公告)号：US20080066596A1
公开(公告)日：2008-03-20
申请号：US11596677
申请日：2005-05-20
申请人： Yoshihiro Yamaguchi , Satoshi Ohnishi
发明人： Yoshihiro Yamaguchi , Satoshi Ohnishi
IPC分类号： B26D5/02 , B23K26/08 , B23K7/10 , B26D1/00 , B26D5/00
CPC分类号： F16P3/147 , B23K7/002 , B23K7/10 , B23K10/00 , B23K10/006 , B23K26/0876 , B23K26/142 , B23K26/38 , B23K26/702 , B23K37/006 , B23K2101/18 , B23Q15/08 , F16P3/141 , F16P3/144 , G05B2219/43124 , G05B2219/45044 , G05B2219/49074 , Y10T83/05 , Y10T83/081 , Y10T83/8726
摘要： In a thermal cutting machine such as plasma cutting machine or a laser cutting machine, control of the moving speed of a cutting head (24) is improved so as to increase throughput of the cutting machine with increase in cost restricted. Products are cut out one by one from a plate member (14) while a cutting head (24) is moved relative to the plate member (14) on a table (12). In this process, when the cutting head (24) is fast-forwarded without performing cutting to a position at which cutting of each product starts, the speed of movement in the direction (Y-axis direction) along a short side of the table (12) is controlled at a speed higher than that of the movement in the direction (X-axis direction) along a long side of the table. The pattern of a sequence of cutting out the products from the plate member (14) is a meandering pattern in which reciprocation in the Y-axis direction dominates and the movement in the X-direction is one time one way. Exhaust chambers are arranged in the X-axis direction in the table (12), and the exhaust chambers are driven as the cutting head (24) moves in the X-axis direction.
摘要翻译：在诸如等离子切割机或激光切割机之类的热切割机中，提高了切割头（24）的移动速度的控制，从而在成本受到限制的情况下增加切割机的生产量。当切割头（24）相对于板构件（14）移动到工作台（12）上时，从板构件（14）逐个切割产品。在该过程中，当切割头（24）不进行切割到每个产品的切割开始的位置而快进时，沿着桌子的短边方向（Y轴方向）的移动速度 12）以比桌子长边方向（X轴方向）移动速度高的速度进行控制。从板构件（14）切出产品的顺序的图案是在Y轴方向上的往复运动占主导地位且X方向移动一次的曲折图案。在台（12）中排列室沿X轴方向排列，当切割头（24）沿X轴方向移动时，排气室被驱动。

24. 发明授权

US07301178B2 Pressed-contact type semiconductor device 失效
标题翻译：压接式半导体器件
公开(公告)号：US07301178B2
公开(公告)日：2007-11-27
申请号：US11212602
申请日：2005-08-29
申请人： Yoshihiro Yamaguchi , Kenji Oota
发明人： Yoshihiro Yamaguchi , Kenji Oota
IPC分类号： H01L29/74
CPC分类号： H01L29/0661 , H01L24/72 , H01L29/0615 , H01L29/0657 , H01L29/32 , H01L29/74 , H01L2924/0102 , H01L2924/1301 , H01L2924/00
摘要： A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.
摘要翻译： AP ++类型的第一扩散层是通过在N +型半导体衬底的正面扩散P型杂质形成的，N型第四扩散层通过在前侧扩散N型杂质而形成比第一扩散层浅的层，并且P型第二扩散层局部形成为环状，以便通过扩散P而暴露在侧面型杂质，P型杂质扩散到基板的背面，局部地形成P +型第三扩散层，以从第二层向内分布扩散层并且不暴露于侧面，并且P型第二扩散层和P + +型第三扩散层形成在两级结构中，因此可以有各种特性改进。

25. 发明申请

US20070262410A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070262410A1
公开(公告)日：2007-11-15
申请号：US11742133
申请日：2007-04-30
申请人： Syotaro Ono , Yusuke Kawaguchi , Yoshihiro Yamaguchi , Miwako Akiyama
发明人： Syotaro Ono , Yusuke Kawaguchi , Yoshihiro Yamaguchi , Miwako Akiyama
IPC分类号： H01L29/00
CPC分类号： H01L29/872 , H01L27/0727 , H01L29/66143 , H01L29/8725
摘要： A semiconductor device includes: a semiconductor layer of a first conductivity type, a plurality of trenches provided on a major surface side of the semiconductor layer, an insulating film provided on an inner wall surface and on top of the trench, a conductive material surrounded by the insulating film and filling the trench, a first semiconductor region of a second conductivity type provided between the trenches, a second semiconductor region of the first conductivity type provided in a surface portion of the first semiconductor region, a mesa of the semiconductor layer provided between the trenches of a Schottky barrier diode region adjacent to a transistor region including the first semiconductor region and the second semiconductor region, a control electrode connected to the conductive material filling the trench of the transistor region and a main electrode provided in contact with a surface of the first semiconductor region, the second semiconductor region, a surface of the mesa and a part of the conductive material filling the trench of the Schottky barrier diode region. The part is exposed through the insulating film.
摘要翻译：半导体器件包括：第一导电类型的半导体层，设置在半导体层的主表面侧的多个沟槽，设置在内壁表面上和沟槽顶部上的绝缘膜，由绝缘膜并填充沟槽，设置在沟槽之间的第二导电类型的第一半导体区域，设置在第一半导体区域的表面部分中的第一导电类型的第二半导体区域，设置在第一半导体区域之间的半导体层的台面与包括第一半导体区域和第二半导体区域的晶体管区域相邻的肖特基势垒二极管区域的沟槽，连接到填充晶体管区域的沟槽的导电材料的控制电极和与第一半导体区域和第二半导体区域的表面接触的主电极第一半导体区域，第二半导体区域，台面的表面以及填充肖特基势垒二极管区域的沟槽的导电材料的一部分。该部件通过绝缘膜曝光。

26. 发明申请

US20070241083A1 Multiple Thermal Cutting Device and Multiple Thermal Cutting Method 有权
标题翻译：多种热切割装置和多种热切割方法
公开(公告)号：US20070241083A1
公开(公告)日：2007-10-18
申请号：US11630141
申请日：2005-06-20
申请人： Yoshihiro Yamaguchi , Tetsuya Kabata , Ikuo Kamada
发明人： Yoshihiro Yamaguchi , Tetsuya Kabata , Ikuo Kamada
IPC分类号： B23K26/08 , B23K10/00
CPC分类号： B23P23/00 , B23K10/006 , B23K26/0093 , B23K26/0876 , B23K26/38 , B23K28/02 , B23K37/0229 , B23K37/0235 , B23K2101/18
摘要： A hybrid thermal cutting apparatus has both a laser head and a plasma torch, both of which can be controlled independently, can perform both laser processing and plasma processing, thus reducing the running costs. A large number of cutting lines for cutting out various types of manufactured products from plate materials are classified into a laser cutting type and a plasma cutting type, according to the cutting length, whether they are the external periphery of manufactured products or apertures, the size of the manufactured products or the apertures, the required process accuracy, the plate thickness, or the like. The lines of the laser cutting type are cut by laser processing, while the lines of the plasma cutting type are cut by plasma processing.
摘要翻译：混合热切割装置具有激光头和等离子体焰炬，它们都可以独立控制，可以进行激光加工和等离子体处理，从而降低运行成本。根据切割长度，无论是制造产品或孔的外围，大量用于从板材切割各种类型的制造产品的切割线分为激光切割型和等离子切割型，尺寸的制造产品或孔，所需的加工精度，板厚等。通过激光加工切割激光切割类型的线，而通过等离子体处理切割等离子体切割类型的线。

27. 发明申请

US20070066654A1 Inhibitory or blocking agents of molecular generating and/or inducing functions 审中-公开
标题翻译：分子产生和/或诱导功能的抑制剂或阻断剂
公开(公告)号：US20070066654A1
公开(公告)日：2007-03-22
申请号：US11513174
申请日：2006-08-31
申请人： Shozo Koyama , Yoshihiro Yamaguchi
发明人： Shozo Koyama , Yoshihiro Yamaguchi
IPC分类号： A61K31/445 , A61K31/40 , A61K31/13 , A61K31/12
CPC分类号： C11D3/0084 , A01N35/06 , A61K8/35 , A61K31/12 , A61K31/122 , A61K31/13 , A61K31/40 , A61K31/445 , A61Q5/02 , A61Q19/00 , C08F2/38
摘要： A method for inhibiting or blocking molecular generating and/or inducing functions of molecules using an inhibitory or blocking agent of the formula: wherein R1-6 are as defined herein.
摘要翻译：使用下式的抑制性或阻断剂抑制或阻断分子产生和/或诱导分子功能的方法：其中R1-6如本文所定义。

28. 发明申请

US20070023793A1 Trench-gate semiconductor device and manufacturing method of trench-gate semiconductor device 有权
标题翻译：沟槽栅半导体器件及沟槽栅极半导体器件的制造方法
公开(公告)号：US20070023793A1
公开(公告)日：2007-02-01
申请号：US11484664
申请日：2006-07-12
申请人： Yoshihiro Yamaguchi , Yusuke Kawaguchi , Syotaro Ono
发明人： Yoshihiro Yamaguchi , Yusuke Kawaguchi , Syotaro Ono
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/66734
摘要： Disclosed is a trench-gate semiconductor device including: a trench gate structure; a source layer having a first conductivity type, facing a gate electrode via a gate insulating film, and having a top plane; a base layer having a second conductivity type, being adjacent to the source layer, and facing the gate electrode via the gate insulating film; a semiconductor layer having the first conductivity type, being adjacent to the base layer, and facing the gate electrode via the gate insulating film without contacting the source layer; and a contact layer having the second conductivity type, contacting the source layer and base layer, having a top plane continuing with the top plane of the source layer, and having two or more peaks in an impurity concentration value profile in a depth direction from the top plane thereof, the peaks being positioned shallower than a formed depth of the source layer.
摘要翻译：公开了一种沟槽栅半导体器件，包括：沟槽栅极结构; 具有第一导电类型的源极层，经由栅极绝缘膜面对栅电极，并具有顶面; 具有第二导电类型的基底层，与源极层相邻，并且经由栅极绝缘膜面对栅电极; 具有第一导电类型的半导体层，与基底层相邻，并且经由栅极绝缘膜面对栅电极而不接触源极层; 以及具有第二导电类型的接触层，与源极层和基极层接触，具有与源极层的顶部平面连续的顶面，并且具有两个或更多个沿着深度方向的杂质浓度值分布中的峰峰位于比源层的形成深度浅的位置。

29. 发明授权

US07143355B2 Information processing device for processing information based on a status monitoring program and method therefor 失效
标题翻译：用于基于状态监视程序处理信息的信息处理装置及其方法
公开(公告)号：US07143355B2
公开(公告)日：2006-11-28
申请号：US10085655
申请日：2002-02-26
申请人： Yoshihiro Yamaguchi , Shinsuke Noguchi
发明人： Yoshihiro Yamaguchi , Shinsuke Noguchi
IPC分类号： G06F3/00 , G06F15/16 , G06F9/44
CPC分类号： G06F3/038 , G06F1/1616 , G06F1/169 , G06F3/0362 , H04M1/233
摘要： A jog dial server monitors an operation notification by a jog dial, then decides the operation based on the operation notification, and executes the decided operation as a jog script engine. The jog dial server loads a script file describing status transition of the jog dial in the script language at the time of start-up, then reads the status transition, and operates in accordance with the status transition thus read. Thus, an information processing device is provided which enables extension of the operation with respect to an application incompatible with the jog dial.
摘要翻译：慢跑拨号服务器通过微动拨盘监视操作通知，然后基于操作通知来决定操作，并且作为点动指令引擎执行所确定的操作。慢跑拨号服务器在启动时以脚本语言加载描述慢速拨盘的状态转换的脚本文件，然后读取状态转换，并根据读取的状态转换进行操作。因此，提供了一种信息处理装置，其能够相对于与微动拨盘不兼容的应用来扩展操作。

30. 发明授权

US07133641B2 Wireless communication RF circuit and communication apparatus including the same 失效
标题翻译：无线通信RF电路和包括其的通信设备
公开(公告)号：US07133641B2
公开(公告)日：2006-11-07
申请号：US10497513
申请日：2003-04-23
申请人： Tsutomi Ieki , Yoshihiro Yamaguchi
发明人： Tsutomi Ieki , Yoshihiro Yamaguchi
IPC分类号： H04B7/00 , H04B1/40 , H04Q5/22
CPC分类号： G06K19/0723 , H04B1/44 , H04B1/48
摘要： A wireless communication RF circuit includes a transmitting-and-receiving antenna, a modulator circuit, an SPST switching circuit, and a demodulator circuit, which are arranged in a sequence. Upon signal reception, the SPST switching circuit is switched ON, and the demodulator circuit extracts a signal wave from a signal received by the antenna and outputs the signal wave to a control circuit. Upon signal transmission, the SPST switching circuit is switched OFF, and the modulator circuit mixes transmission data supplied from the control circuit with a carrier and outputs the carrier to the antenna. Only a single antenna is required. Upon signal reception, the influence of the modulator circuit is negligible. Upon signal transmission, the SPST switching circuit is switched OFF, thus the effect of the demodulator circuit is negligible, which greatly reduces loss.
摘要翻译：无线通信RF电路包括按顺序排列的发送和接收天线，调制器电路，SPST切换电路和解调器电路。信号接收后，SPST切换电路接通，解调电路从天线接收的信号中提取信号波，并将信号波输出到控制电路。信号传输时，SPST切换电路切换为OFF，调制电路将从控制电路提供的发送数据与载波混合，并将载波输出到天线。只需要一根天线。在信号接收时，调制器电路的影响可以忽略不计。在信号传输时，SPST切换电路关闭，解调电路的影响可以忽略不计，大大降低了损耗。

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