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21. 发明授权

US06838297B2 Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same 失效
标题翻译：纳米结构，电子发射器件，碳纳米管器件及其制造方法
公开(公告)号：US06838297B2
公开(公告)日：2005-01-04
申请号：US09867611
申请日：2001-05-31
申请人： Tatsuya Iwasaki , Tohru Den
发明人： Tatsuya Iwasaki , Tohru Den
IPC分类号： H01J1/304 , B81C1/00 , B82B3/00 , G01N27/403 , G01N27/414 , G11B5/73 , G11B5/855 , H01F1/00 , H01J9/02 , H01L21/3063 , H01L21/00 , H01J9/04 , H01J9/12 , H01J9/14
CPC分类号： H01F1/009 , B81C1/00087 , B81C2201/0114 , B82Y10/00 , B82Y25/00 , G11B5/7325 , G11B5/743 , G11B5/855 , G11C2213/81 , H01F1/0081 , H01J1/304 , H01J1/3042 , H01J9/025 , H01J2201/30469 , Y10S977/778 , Y10S977/78 , Y10S977/939
摘要： The invention provides a nanostructure including an anodized film including nanoholes. The anodized film is formed on a substrate having a surface including at least one material selected from the group consisting of semiconductors, noble metals, Mn, Fe, Co, Ni, Cu and carbon. The nanoholes are cut completely through the anodized film from the surface of the anodized film to the surface of the substrate. The nanoholes have a first diameter at the surface of the anodized film and a second diameter at the surface of the substrate. The nanoholes are characterized in that either a constriction exists at a location between the surface of the anodized film and the surface of the substrate, or the second diameter is greater than the first diameter.
摘要翻译：本发明提供纳米结构，其包括包括纳孔的阳极氧化膜。阳极氧化膜形成在具有包括选自半导体，贵金属，Mn，Fe，Co，Ni，Cu和碳中的至少一种材料的表面的基板上。通过阳极氧化膜将阳极氧化膜的表面完全切割成纳米孔至基底表面。纳米孔在阳极氧化膜的表面具有第一直径，在基底表面具有第二直径。纳米孔的特征在于，在阳极氧化膜的表面和基底的表面之间的位置处存在收缩，或者第二直径大于第一直径。

22. 发明授权

US06790787B2 Structure having narrow pores 失效
标题翻译：结构狭窄
公开(公告)号：US06790787B2
公开(公告)日：2004-09-14
申请号：US10222901
申请日：2002-08-19
申请人： Tatsuya Iwasaki , Tohru Den
发明人： Tatsuya Iwasaki , Tohru Den
IPC分类号： H01L2131
CPC分类号： C25D11/045
摘要： A method of producing a structure having narrow pores includes a first step of bringing pore-guiding members into contact with upper and lower surfaces of a member comprising aluminum as a principal ingredient and a second step of anodizing the member comprising aluminum as the principal ingredient to form narrow pores. The pore-guiding members contain the same material as a principal ingredient. The second step includes preferably a step of transforming the member comprising aluminum as the principal ingredient into a porous body comprising alumina having narrow pores oriented substantially parallel to the interfaces between the pore-guiding members and the member comprising aluminum as the principal ingredient.
摘要翻译：一种生产具有窄孔结构的方法包括：使导孔件与包含铝作为主要成分的构件的上表面和下表面相接触的第一步骤和以铝为主要成分阳极氧化的第二步骤，形成狭窄的毛孔。导孔构件包含与主要成分相同的材料。第二步骤优选包括将包含铝作为主要成分的构件转化为多孔体的多孔体，所述多孔体包括具有基本平行于孔导向构件和包含铝作为主要成分的构件之间的界面的窄孔的氧化铝。

23. 发明授权

US06737668B2 Method of manufacturing structure with pores and structure with pores 失效
标题翻译：具有毛孔和结构孔的结构的制造方法
公开(公告)号：US06737668B2
公开(公告)日：2004-05-18
申请号：US09895464
申请日：2001-07-02
申请人： Tohru Den , Tatsuya Iwasaki
发明人： Tohru Den , Tatsuya Iwasaki
IPC分类号： H01L2906
CPC分类号： B01D71/025 , B01D67/0065 , B81B2203/0315 , B81C1/00031 , B81C2201/0114 , C04B38/0025 , C04B2111/00612 , C25D11/045 , H01L49/00 , C04B35/10 , C04B38/0003 , C04B41/4564
摘要： A method of manufacturing a structure with pores which are formed by anodic oxidation and whose layout, pitch, position, direction, shape and the like can be controlled. The method includes the steps of: disposing a lamination film on a substrate, the lamination film being made of insulating layers and a layer to be anodically oxidized and containing aluminum as a main composition; and performing anodic oxidation starting from an end surface of the lamination film to form a plurality of pores having an axis substantially parallel to a surface of the substrate, wherein the layer to be anodically oxidized is sandwiched between the insulating layers, and a projected pattern substantially parallel to the axis of the pore is formed on at least one of the insulating layers at positions between the pores.
摘要翻译：可以控制通过阳极氧化形成具有孔的结构的方法，其结构，间距，位置，方向，形状等可以被控制。该方法包括以下步骤：在基板上设置层压膜，层叠膜由绝缘层和要被阳极氧化并含有铝作为主要组成的层制成; 以及从所述层压膜的端面开始进行阳极氧化，以形成具有基本上平行于所述基板的表面的轴的多个孔，其中所述被阳极氧化的层被夹在所述绝缘层之间，并且基本上在孔之间的位置处，在至少一个绝缘层上形成平行于孔的轴线。

24. 发明授权

US06628053B1 Carbon nanotube device, manufacturing method of carbon nanotube device, and electron emitting device 失效
标题翻译：碳纳米管装置，碳纳米管装置的制造方法以及电子发射装置
公开(公告)号：US06628053B1
公开(公告)日：2003-09-30
申请号：US09178680
申请日：1998-10-26
申请人： Tohru Den , Tatsuya Iwasaki
发明人： Tohru Den , Tatsuya Iwasaki
IPC分类号： H01J162
CPC分类号： D01F9/127 , G01Q60/16 , G01Q60/38 , G01Q70/12 , H01J1/14 , H01J1/30 , H01J1/304 , H01J9/025 , H01J2201/30469 , Y10S977/932 , Y10S977/939
摘要： The present invention discloses a carbon nanotube device comprising a support having a conductive surface and a carbon nanotube, one of whose terminus binds to the conductive surface so that conduction between the surface and the carbon nanotube is maintained, wherein a root of the carbon nanotube where the carbon nanotube binds to the conductive surface is surrounded by a wall. Such a carbon nanotube device, having carbon nanotubes with a uniform direction of growth, can generate a large quantity of emitted electrons when it is used as an electron emission device.
摘要翻译：本发明公开了一种碳纳米管装置，其包括具有导电表面的支撑体和碳纳米管，其一个端部与导电表面结合，从而保持表面和碳纳米管之间的导电，其中碳纳米管的根部与导电表面结合的碳纳米管被壁围绕。具有均匀生长方向的碳纳米管的碳纳米管装置在用作电子发射装置时可产生大量的发射电子。

25. 发明授权

US06278231B1 Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same 有权
标题翻译：纳米结构，电子发射器件，碳纳米管器件及其制造方法
公开(公告)号：US06278231B1
公开(公告)日：2001-08-21
申请号：US09276667
申请日：1999-03-26
申请人： Tatsuya Iwasaki , Tohru Den
发明人： Tatsuya Iwasaki , Tohru Den
IPC分类号： H01J102
CPC分类号： H01F1/009 , B81C1/00087 , B81C2201/0114 , B82Y10/00 , B82Y25/00 , G11B5/7325 , G11B5/743 , G11B5/855 , G11C2213/81 , H01F1/0081 , H01J1/304 , H01J1/3042 , H01J9/025 , H01J2201/30469 , Y10S977/778 , Y10S977/78 , Y10S977/939
摘要： The invention provides a nanostructure including an anodized film including nanoholes. The anodized film is formed on a substrate having a surface including at least one material selected from the group consisting of semiconductors, noble metals, Mn, Fe, Co, Ni, Cu and carbon. The nanoholes are cut completely through the anodized film from the surface of the anodized film to the surface of the substrate. The nanoholes have a first diameter at the surface of the anodized film and a second diameter at the surface of the substrate. The nanoholes are characterized in that either a constriction exists at a location between the surface of the anodized film and the surface of the substrate, or the second diameter is greater than the first diameter.
摘要翻译：本发明提供纳米结构，其包括包括纳孔的阳极氧化膜。阳极氧化膜形成在具有包括选自半导体，贵金属，Mn，Fe，Co，Ni，Cu和碳中的至少一种材料的表面的基板上。通过阳极氧化膜将阳极氧化膜的表面完全切割成纳米孔至基底表面。纳米孔在阳极氧化膜的表面具有第一直径，在基底表面具有第二直径。纳米孔的特征在于，在阳极氧化膜的表面和基底的表面之间的位置处存在收缩，或者第二直径大于第一直径。

26. 发明授权

US06231412B1 Method of manufacturing and adjusting electron source array 失效
标题翻译：制造和调整电子源阵列的方法
公开(公告)号：US06231412B1
公开(公告)日：2001-05-15
申请号：US08718744
申请日：1996-09-18
申请人： Hisaaki Kawade , Tatsuya Iwasaki
发明人： Hisaaki Kawade , Tatsuya Iwasaki
IPC分类号： H01J902
CPC分类号： H01J9/027 , H01J2329/00
摘要： In an electron source having a plurality of surfaceconduction electron-emitting devices, the electrical characteristics of the surfaceconduction electron-emitting devices are made, controllable, and uniform. For this purpose, the electron emission characteristic of a selected surfaceconduction electron-emitting device is adjusted with a correction process of applying a voltage higher than a practical driving voltage to the device.
摘要翻译：在具有多个表面积电子发射器件的电子源中，表面传导电子发射器件的电特性被制成，可控制和均匀。为此，通过向设备施加比实际驱动电压高的电压的校正处理来调整所选择的表面传导电子发射器件的电子发射特性。

27. 发明申请

US20130026374A1 RADIATION DETECTOR 有权
标题翻译：辐射探测器
公开(公告)号：US20130026374A1
公开(公告)日：2013-01-31
申请号：US13552074
申请日：2012-07-18
申请人： Tatsuya Saito , Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
发明人： Tatsuya Saito , Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
IPC分类号： G01T1/202
CPC分类号： G01T1/202 , G01T1/2008 , G21K4/00 , G21K2004/04 , G21K2004/06
摘要： Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1≦n3≦n2 and n2≦n3≦n1.
摘要翻译：提供一种辐射检测器，包括：包括多个像素的二维光接收元件; 以及具有二维配置在二维光接收元件的受光面上的多个闪烁器晶体的闪烁器层，其中：所述闪烁体晶体包括两个晶相，所述晶体相是包括包含多个柱状晶体在垂直于二维光接收元件的光接收表面的方向上延伸并具有折射率n1，第二晶相包括存在于多个柱状晶体之间并具有折射率n2的材料; 折射率n3的材料被放置在相邻的闪烁体晶体之间，折射率n3满足n1和n1E之间的关系; n3和n1E; n2和n2和n1E之间的关系; n3和n1E; n1。

28. 发明申请

US20130022169A1 RADIATION DETECTING DEVICE 有权
标题翻译：辐射检测装置
公开(公告)号：US20130022169A1
公开(公告)日：2013-01-24
申请号：US13544096
申请日：2012-07-09
申请人： Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
发明人： Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
IPC分类号： G01T1/20 , G01N23/04 , B82Y15/00
CPC分类号： G01T1/202
摘要： Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.
摘要翻译：本发明提供一种放射线检测装置，其特征在于，包括：闪光体，其在对其照射时发光; 以及具有用于接收二维布置的发射光的光接收元件的光传感器阵列，其中：闪烁体具有用于在光传播方向上传播闪烁体内的光的相分离结构，形成相分离结构通过在第二材料中嵌入由第一材料形成的多个柱状部分; 辐射从不与光传播方向平行的方向照射到闪烁体; 并且在闪烁体内发射的光在光传播方向上传播通过闪烁体，并被放置成面对闪烁体的端面的光电传感器阵列接收。

29. 发明授权

US08164090B2 Field effect transistor and process for production thereof 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08164090B2
公开(公告)日：2012-04-24
申请号：US12573381
申请日：2009-10-05
申请人： Tatsuya Iwasaki , Naho Itagaki
发明人： Tatsuya Iwasaki , Naho Itagaki
IPC分类号： H01L29/72
CPC分类号： H01L29/7869 , H01L29/78618
摘要： A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride.
摘要翻译：场效应晶体管具有栅极电极，栅极绝缘层，沟道以及与沟道电连接的源极和漏极，所述沟道包括氧化物半导体，源电极或漏电极包括氧氮化物。

30. 发明授权

US08154024B2 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film 有权
标题翻译：使用非晶氧化物膜作为沟道层的场效应晶体管，使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法，以及非晶氧化物膜的制造方法
公开(公告)号：US08154024B2
公开(公告)日：2012-04-10
申请号：US13089703
申请日：2011-04-19
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L29/78693 , H01L29/66969 , Y10T29/41
摘要： An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.
摘要翻译：含有氢（或氘）的无定形氧化物被施加到晶体管的沟道层。因此，可以实现具有优异TFT特性的薄膜晶体管，具有小滞后，常关断操作，高ON / OFF比，高饱和电流等优异的TFT特性。此外，作为制造由非晶氧化物制成的沟道层的方法，在含有氢气和氧气的气氛中进行成膜，可以控制非晶氧化物的载流子浓度。

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