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21. 发明授权

US08064124B2 Silicon-rich silicon nitrides as etch stops in MEMS manufacture 失效
标题翻译：在MEMS制造中，富硅硅氮化物作为蚀刻停止
公开(公告)号：US08064124B2
公开(公告)日：2011-11-22
申请号：US12128469
申请日：2008-05-28
申请人： Wonsuk Chung , Steve Zee , Teruo Sasagawa
发明人： Wonsuk Chung , Steve Zee , Teruo Sasagawa
IPC分类号： G02B26/00
CPC分类号： B81C1/00801 , B81B2201/047 , B81C2201/014 , G02B26/001 , Y10T428/31678
摘要： The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer may include silicon-rich silicon nitride.
摘要翻译：通过在牺牲层和电极之间采用蚀刻停止层来改善诸如干涉式调制器之类的MEMS器件的制造。蚀刻停止可以减少对牺牲层和电极的不希望的过蚀刻。蚀刻停止层也可以用作阻挡层，缓冲层和/或模板层。蚀刻停止层可以包括富硅的氮化硅。

22. 发明授权

US07889417B2 Electromechanical system having a dielectric movable membrane 有权
标题翻译：具有电介质可移动膜的机电系统
公开(公告)号：US07889417B2
公开(公告)日：2011-02-15
申请号：US12498234
申请日：2009-07-06
申请人： Teruo Sasagawa
发明人： Teruo Sasagawa
IPC分类号： G02B26/00 , G02B26/08 , G02F1/29
CPC分类号： G02B26/001
摘要： An electromechanical device includes a partially reflective and partially transmissive layer and a movable functional element. The movable functional element includes a patterned flexible dielectric layer and a reflective layer mechanically coupled to the flexible dielectric layer. The patterned flexible dielectric layer is configured to flex in response to voltages applied to the partially reflective and partially transmissive layer to move the functional element in a direction generally perpendicular to the partially reflective and partially transmissive layer. The reflective layer is situated between the flexible dielectric layer and the partially reflective and partially transmissive layer.
摘要翻译：机电装置包括部分反射和部分透射的层和可移动的功能元件。可移动功能元件包括图案化的柔性介电层和机械耦合到柔性介电层的反射层。图案化的柔性介电层被配置为响应于施加到部分反射和部分透射层的电压而弯曲，以在大致垂直于部分反射和部分透射的层的方向上移动功能元件。反射层位于柔性介电层和部分反射和部分透射层之间。

23. 发明申请

US20100149627A1 SUPPORT STRUCTURE FOR MEMS DEVICE AND METHODS THEREFOR 失效
标题翻译： MEMS器件的支持结构及其方法
公开(公告)号：US20100149627A1
公开(公告)日：2010-06-17
申请号：US12711594
申请日：2010-02-24
申请人： Teruo Sasagawa , Clarence Chui , Manish Kothari , SuryaPrakash Ganti , Jeffrey B. Sampsell , Chun-Ming Wang
发明人： Teruo Sasagawa , Clarence Chui , Manish Kothari , SuryaPrakash Ganti , Jeffrey B. Sampsell , Chun-Ming Wang
IPC分类号： G02B26/00 , B05D5/12 , C23F1/00
CPC分类号： G02B26/0841 , B81B2201/042 , B81B2203/0307 , B81C1/00595 , B81C2201/014 , G02B26/001
摘要： A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.
摘要翻译：具有由保护材料包围的牺牲材料形成的支撑结构的微机电系统装置。微机电系统装置包括其上形成有电极的基板。另一电极通过空腔与第一电极分离，并形成可移动层，该可移动层由牺牲材料形成的支撑结构支撑。

24. 发明授权

US07715085B2 Electromechanical system having a dielectric movable membrane and a mirror 有权
标题翻译：具有电介质可移动膜和反射镜的机电系统
公开(公告)号：US07715085B2
公开(公告)日：2010-05-11
申请号：US11746513
申请日：2007-05-09
申请人： Teruo Sasagawa
发明人： Teruo Sasagawa
IPC分类号： G02B26/00 , G02B26/08 , G02F1/29
CPC分类号： G02B26/001 , B81B3/0072 , B81B2201/047
摘要： A microelectromechanical (MEMS) device includes at least one electrode, a first reflective layer, and a movable reflective element. The movable reflective element includes a flexible dielectric layer and a second reflective layer mechanically coupled to the flexible dielectric layer. The flexible dielectric layer flexes in response to voltages applied to the at least one electrode to move the reflective element in a direction generally perpendicular to the first reflective layer.
摘要翻译：微机电（MEMS）装置包括至少一个电极，第一反射层和可移动反射元件。可移动反射元件包括柔性介电层和机械耦合到柔性介电层的第二反射层。柔性介电层响应于施加到至少一个电极的电压而弯曲，以沿大致垂直于第一反射层的方向移动反射元件。

25. 发明申请

US20090071933A1 ETCHING PROCESSES USED IN MEMS PRODUCTION 审中-公开
标题翻译：在MEMS生产中使用的蚀刻工艺
公开(公告)号：US20090071933A1
公开(公告)日：2009-03-19
申请号：US12210026
申请日：2008-09-12
申请人： Philip Floyd , Evgeni Gousev , David Heald , Ben Ward Hertzler , Chok Ho , Teruo Sasagawa , Xiaoming Yan , Todd Lyle Zion
发明人： Philip Floyd , Evgeni Gousev , David Heald , Ben Ward Hertzler , Chok Ho , Teruo Sasagawa , Xiaoming Yan , Todd Lyle Zion
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01L21/32135 , B01D53/002 , B01D2257/11 , B01D2257/2027 , H01L21/31116
摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
摘要翻译：可以以各种方式增加蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

26. 发明申请

US20090071932A1 ETCHING PROCESSES USED IN MEMS PRODUCTION 失效
公开(公告)号：US20090071932A1
公开(公告)日：2009-03-19
申请号：US12210010
申请日：2008-09-12
申请人： Philip Floyd , Chok Ho , Teruo Sasagawa , Xiaoming Yan
发明人： Philip Floyd , Chok Ho , Teruo Sasagawa , Xiaoming Yan
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01L21/32135 , B01D53/002 , B01D2257/11 , B01D2257/2027 , H01L21/31116
摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

27. 发明申请

US20080226929A1 SILICON-RICH SILICON NITRIDES AS ETCH STOP IN MEMS MANUFACTURE 失效
标题翻译：有机硅制成的硅氧化物作为MEMS制造中的停止
公开(公告)号：US20080226929A1
公开(公告)日：2008-09-18
申请号：US12128469
申请日：2008-05-28
申请人： Wonsuk Chung , Steve Zee , Teruo Sasagawa
发明人： Wonsuk Chung , Steve Zee , Teruo Sasagawa
IPC分类号： B32B15/04
CPC分类号： B81C1/00801 , B81B2201/047 , B81C2201/014 , G02B26/001 , Y10T428/31678
摘要： The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer may include silicon-rich silicon nitride.
摘要翻译：通过在牺牲层和电极之间采用蚀刻停止层来改善诸如干涉式调制器之类的MEMS器件的制造。蚀刻停止可以减少对牺牲层和电极的不希望的过蚀刻。蚀刻停止层也可以用作阻挡层，缓冲层和/或模板层。蚀刻停止层可以包括富硅的氮化硅。

28. 发明申请

US20070247401A1 Microelectromechanical device and method utilizing nanoparticles 失效
标题翻译：微机电装置和利用纳米粒子的方法
公开(公告)号：US20070247401A1
公开(公告)日：2007-10-25
申请号：US11407730
申请日：2006-04-19
申请人： Teruo Sasagawa , Lior Kogut
发明人： Teruo Sasagawa , Lior Kogut
IPC分类号： G09G3/34
CPC分类号： G02B26/001 , B81B3/001
摘要： A microelectromechanical device (MEMS) utilizing nanoparticles for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode assembly having a first surface; and a movable reflective electrode assembly with a second surface facing the first surface. The movable reflective electrode assembly is movable between a relaxed and actuated (collapsed) position. Particles are deposited over the transparent electrode assembly or over a sacrificial layer separating the two electrodes. The particles lead to dimples in the reflective surface of the moving electrode. The particles can be removed with the sacrificial layer or remain in final devices.
摘要翻译：公开了一种利用纳米颗粒降低静电的微机电装置（MEMS）。在一个实施例中，微机电装置是干涉式调制器，其包括具有第一表面的透明电极组件; 以及具有面向第一表面的第二表面的可移动反射电极组件。可移动反射电极组件可在松弛和致动（折叠）位置之间移动。颗粒沉积在透明电极组件上或分离两个电极的牺牲层上。颗粒导致移动电极的反射表面中的凹坑。颗粒可以用牺牲层去除或保留在最终的装置中。

29. 发明申请

US20070155051A1 Method of creating MEMS device cavities by a non-etching process 有权
标题翻译：通过非蚀刻工艺制造MEMS器件腔的方法
公开(公告)号：US20070155051A1
公开(公告)日：2007-07-05
申请号：US11321134
申请日：2005-12-29
申请人： Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
发明人： Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
IPC分类号： H01L21/00
CPC分类号： B81C1/00047 , B81B2201/047 , B81C2201/0108 , B81C2201/0111 , G02B26/001
摘要： MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.
摘要翻译：可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电导电层。另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电导电层和第二导电层。

30. 发明申请

US20070019280A1 MEMS devices having overlying support structures and methods of fabricating the same 有权
标题翻译：具有上覆支撑结构的MEMS器件及其制造方法
公开(公告)号：US20070019280A1
公开(公告)日：2007-01-25
申请号：US11490880
申请日：2006-07-21
申请人： Teruo Sasagawa , SuryaPrakash Ganti , Mark Miles , Clarence Chui , Manish Kothari , Ming-Hau Tung
发明人： Teruo Sasagawa , SuryaPrakash Ganti , Mark Miles , Clarence Chui , Manish Kothari , Ming-Hau Tung
IPC分类号： G02F1/29 , G02B6/00
CPC分类号： G02B26/001 , B81B3/007 , B81B2201/047 , B81B2203/0307 , B81B2203/053
摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.
摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。

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