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21. 发明授权

US06387747B1 Method to fabricate RF inductors with minimum area 有权
标题翻译：制造面积最小的射频电感器的方法
公开(公告)号：US06387747B1
公开(公告)日：2002-05-14
申请号：US09867561
申请日：2001-05-31
申请人： Randall Cha , Tae Jong Lee , Alex See , Lap Chan , Chua Chee Tee
发明人： Randall Cha , Tae Jong Lee , Alex See , Lap Chan , Chua Chee Tee
IPC分类号： H01L218244
CPC分类号： H01L28/10 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method for forming an RF inductor of helical shape having high Q and minimum area. The inductor is fabricated of metal or damascened linear segments formed on three levels of intermetal dielectric layers and interconnected by metal filled vias to form the complete helical shape with electrical continuity.
摘要翻译：一种形成具有高Q值和最小面积的螺旋形RF电感器的方法。电感器由形成在三层金属间电介质层上并由金属填充的通孔相互连接形成具有电连续性的完整螺旋形状的金属或镶嵌的线性段制成。

22. 发明授权

US09576433B2 Method and system to replace a betting action in advance of a user turn in virtual card game services 有权
标题翻译：在用户提前转换虚拟卡片游戏服务的方法和系统来取代投注动作
公开(公告)号：US09576433B2
公开(公告)日：2017-02-21
申请号：US12124241
申请日：2008-05-21
申请人： Ki Yong Kim , Tae Jong Lee
发明人： Ki Yong Kim , Tae Jong Lee
IPC分类号： A63F9/24 , A63F13/00 , G06F17/00 , G06F19/00 , A63F1/00 , A63F9/20 , G07F17/32
CPC分类号： G07F17/3276 , G07F17/32 , G07F17/3225 , G07F17/3244 , G07F17/3293
摘要： Disclosed herein are a method and system for providing card game services. The method includes entering a virtually implemented game room to play a card game provided over the Internet, participating in the card game according to predetermined rules of the card game, setting a betting action depending on a situation of the card game in advance during the card game, and playing the game by automatically entering the set betting action on a relevant turn. The system includes at least one user terminal for playing a card game over an Internet, and a game provision server for implementing a virtual game room, enabling a betting action to be selected during the game through input from the user terminal, and automatically taking the selected betting action on a relevant turn.
摘要翻译：这里公开了用于提供纸牌游戏服务的方法和系统。该方法包括输入虚拟实现的游戏室，以便根据纸牌游戏的预定规则参与在互联网上提供的纸牌游戏，根据纸牌游戏的情况在卡内设置投注动作游戏，并通过在相关的转弯自动进入设定的投注动作来玩游戏。该系统包括至少一个用于通过互联网播放纸牌游戏的用户终端，以及用于实现虚拟游戏室的游戏提供服务器，使得能够在游戏期间通过来自用户终端的输入来选择投注动作，并且自动地在相关回合中选择投注行动。

23. 发明申请

US20100116459A1 Ground Water Restoration Type Terrestrial Heat Exchanger Using Auto Temperature Bypass Apparatus 有权
标题翻译：使用自动温度旁路装置的地下水恢复型陆地热交换器
公开(公告)号：US20100116459A1
公开(公告)日：2010-05-13
申请号：US12613392
申请日：2009-11-05
申请人： Byoung Ohan Shim , Tae Jong Lee
发明人： Byoung Ohan Shim , Tae Jong Lee
IPC分类号： F24J3/08
CPC分类号： F24T10/20 , Y02E10/14
摘要： A pipe well; a ground water outlet pipe inserted into the pipe well; a submerged pump installed at the ground water outlet pipe; a heat exchanger in which the ground water is circulated and terrestrial heat of the ground water is heat-exchanged; a collection pipe collects the ground water circulated through the heat exchanger into the pipe well; a connection pipe which connects the submerged pump and the heat exchanger; an auto temperature bypass apparatus which is installed at the connection pipe to automatically bypass the ground water from the connection pipe when a temperature of the ground water arrives at a predetermined value; a discharge pipe through which the ground water bypassed is discharged; and a ground water restoration hole adjacent to the pipe well in which the discharge pipe is inserted to fill up the ground water nearby.
摘要翻译：管井; 地下水出水管插入管井; 一个安装在地下出水管上的水下泵; 热交换器，其中地下水循环并且地下水的地热被热交换; 收集管将通过热交换器循环的地下水收集到管井中; 连接所述浸没泵和所述热交换器的连接管; 自动温度旁路装置，当地下水的温度达到规定值时，安装在连接管上，从连接管自动旁路地下水; 旁路地下水排出的排水管; 以及与管井相邻的地下水恢复孔，其中排放管被插入以填充附近的地下水。

24. 发明授权

US06348385B1 Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant 有权
标题翻译：使用具有低介电常数的原位掺杂间隔物的具有小覆盖电容的短沟道CMOS晶体管的方法
公开(公告)号：US06348385B1
公开(公告)日：2002-02-19
申请号：US09726256
申请日：2000-11-30
申请人： Randall Cher Liang Cha , Tae Jong Lee , Alex See , Lap Chan , Chee Tee Chua
发明人： Randall Cher Liang Cha , Tae Jong Lee , Alex See , Lap Chan , Chee Tee Chua
IPC分类号： H01L21336
CPC分类号： H01L29/66545 , H01L21/2255 , H01L21/28167 , H01L29/4983 , H01L29/51 , H01L29/66537 , H01L29/66553 , H01L29/7834
摘要： The method for a transistor using a replacement gate process that has a doped low-K dielectric spacer that lowers the junction capacitance. A dummy gate is formed over a substrate. Ions are implanted into the substrate using the dummy gate as an implant mask to form source and drain regions. A masking layer is formed on the substrate over the source and drain regions. We remove the dummy gate. Doped low k spacers are formed on the sidewalls of the masking layer. The doped spacers are heated to diffuse dopant into the substrate to form lightly doped drain (LDD regions). We form a high k gate dielectric layer over the masking layer. A gate layer is formed over the high K dielectric layer. The gate layer is chemical-mechanical polished (CMP) to form a gate over the high k dielectric layer and to remove the gate layer over the masking layer.
摘要翻译：使用具有降低结电容的掺杂低K电介质间隔物的替代栅极工艺的晶体管的方法。在基板上形成虚拟栅极。使用伪栅极作为注入掩模将离子注入到衬底中以形成源区和漏区。在源极和漏极区上的衬底上形成掩模层。我们删除虚拟门。在掩蔽层的侧壁上形成掺杂的低k间隔物。掺杂的间隔物被加热以将掺杂剂扩散到衬底中以形成轻掺杂漏极（LDD区）。我们在掩模层上形成一个高k栅介质层。在高K电介质层上形成栅极层。栅极层是化学机械抛光（CMP），以在高k电介质层上形成栅极，并且去除掩模层上的栅极层。

25. 发明授权

US06284590B1 Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors 有权
标题翻译：用于MIM电容器的底金属图案化期间消除顶部金属角成形的方法
公开(公告)号：US06284590B1
公开(公告)日：2001-09-04
申请号：US09726655
申请日：2000-11-30
申请人： Randall Cher Liang Cha , Cheng Yeow Ng , Shao-Fu Sanford Chu , Tae Jong Lee , Chua Chee Tee
发明人： Randall Cher Liang Cha , Cheng Yeow Ng , Shao-Fu Sanford Chu , Tae Jong Lee , Chua Chee Tee
IPC分类号： H01L218242
CPC分类号： H01L28/40 , H01L21/32139 , H01L28/60 , Y10S438/957
摘要： A method for fabricating a metal-insulator-metal capacitor wherein top metal corner shaping during patterning is eliminated is described. An insulating layer is provided overlying a semiconductor substrate. A first metal layer is deposited over the insulating layer. A capacitor dielectric layer is deposited overlying the first metal layer. A second metal layer is deposited overlying the capacitor dielectric layer and patterned to form a top metal electrode. A flowable material layer is deposited overlying the capacitor dielectric and the top metal electrode and anisotropically etched away to leave spacers on sidewalls of the top metal electrode. A photoresist mask is formed overlying the capacitor dielectric and the top metal electrode wherein the spacers provide extra photoresist thickness at the sidewalls of the top metal layer. The capacitor dielectric layer and the first metal layer are patterned wherein the patterned first metal layer forms a bottom metal electrode and wherein the spacers protect the top metal layer from etching during the patterning. The photoresist mask is removed, completing fabrication of a metal-insulator-metal capacitor.
摘要翻译：描述了一种用于制造金属 - 绝缘体 - 金属电容器的方法，其中消除了图案化期间的顶部金属角成形。绝缘层设置在半导体衬底上。第一金属层沉积在绝缘层上。沉积在第一金属层上的电容器电介质层。将第二金属层沉积在电容器介电层上并被图案化以形成顶部金属电极。将可流动材料层沉积在电容器电介质和顶部金属电极上，并各向异性地蚀刻掉，以在顶部金属电极的侧壁上留下间隔物。形成覆盖电容器电介质和顶部金属电极的光致抗蚀剂掩模，其中间隔物在顶部金属层的侧壁处提供额外的光致抗蚀剂厚度。电容器电介质层和第一金属层被图案化，其中图案化的第一金属层形成底部金属电极，并且其中间隔件在图案化期间保护顶部金属层不被蚀刻。去除光致抗蚀剂掩模，完成金属 - 绝缘体 - 金属电容器的制造。

26. 发明申请

US20080293471A1 METHOD AND SYSTEM FOR PROVIDING CARD GAME SERVICES 有权
标题翻译：提供卡片游戏服务的方法和系统
公开(公告)号：US20080293471A1
公开(公告)日：2008-11-27
申请号：US12124241
申请日：2008-05-21
申请人： Ki Yong Kim , Tae Jong Lee
发明人： Ki Yong Kim , Tae Jong Lee
IPC分类号： A63F9/24
CPC分类号： G07F17/3276 , G07F17/32 , G07F17/3225 , G07F17/3244 , G07F17/3293
摘要： Disclosed herein are a method and system for providing card game services. The method includes entering a virtually implemented game room to play a card game provided over the Internet, participating in the card game according to predetermined rules of the card game, setting a betting action depending on a situation of the card game in advance during the card game, and playing the game by automatically entering the set betting action on a relevant turn. The system includes at least one user terminal for playing a card game over an Internet, and a game provision server for implementing a virtual game room, enabling a betting action to be selected during the game through input from the user terminal, and automatically taking the selected betting action on a relevant turn.
摘要翻译：这里公开了用于提供纸牌游戏服务的方法和系统。该方法包括输入虚拟实现的游戏室，以便根据纸牌游戏的预定规则参与在互联网上提供的纸牌游戏，根据纸牌游戏的情况在卡内设置投注动作游戏，并通过在相关的转弯自动进入设定的投注动作来玩游戏。该系统包括至少一个用于通过互联网播放纸牌游戏的用户终端，以及用于实现虚拟游戏室的游戏提供服务器，使得能够在游戏期间通过来自用户终端的输入来选择投注动作，并且自动地在相关回合中选择投注行动。

27. 发明授权

US06376360B1 Effective retardation of fluorine radical attack on metal lines via use of silicon rich oxide spacers 失效
标题翻译：通过使用富硅氧化物间隔物有效延缓金属线上的氟自由基攻击
公开(公告)号：US06376360B1
公开(公告)日：2002-04-23
申请号：US09641390
申请日：2000-08-18
申请人： Randall Cher Liang Cha , Tae Jong Lee
发明人： Randall Cher Liang Cha , Tae Jong Lee
IPC分类号： H01L214763
CPC分类号： H01L21/76829 , H01L21/76885
摘要： A process for forming metal structures, encapsulated in silicon rich oxide, (SRO), shapes and layers, needed to protect the metal structures from the corrosive effects of fluorine radicals, present in low k, fluorinated silica glass, (FSG), which in turn is formed in the spaces between metal structures, has been developed. The process features initial formation of the metal structures, capped with an overlying SRO shape. This is followed by the formation of SRO spacers on the sides of the SRO capped, metal structures. Another thin, conformal SRO layer is then deposited to insure encapsulation of the metal structures, however still leaving adequate space between the SRO encapsulated metal structures for the low k FSG layer, needed to limit capacitance and improve device performance.
摘要翻译：存在于低k，氟化石英玻璃（FSG）中的形成金属结构的方法，该方法封装在富硅氧化物（SRO），形状和层中，以保护金属结构免受氟自由基的腐蚀作用。在金属结构之间的空间中形成转弯，已经开发出来。该工艺特征是初始形成金属结构，上覆SRO形状。随后在SRO封盖的金属结构的侧面上形成SRO间隔物。然后沉积另一薄的共形SRO层以确保金属结构的封装，然而仍然在限制电容和提高器件性能所需的低k FSG层的SRO封装的金属结构之间留下足够的空间。

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