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21. 发明授权

US5302240A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5302240A
公开(公告)日：1994-04-12
申请号：US20193
申请日：1993-02-19
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L2/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31122 , H01L21/0332 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
摘要翻译：一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜，含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

22. 发明授权

US5240554A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5240554A
公开(公告)日：1993-08-31
申请号：US824095
申请日：1992-01-22
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano
IPC分类号： H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213
CPC分类号： H01L21/31138 , H01L21/3081 , H01L21/31116 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32139 , Y10S438/945
摘要： A method of manufacturing a semiconductor device includes the steps of forming a carbon film on a target film formed on a substrate, forming an organic film pattern on the carbon film, etching the carbon film using the organic film pattern as a mask to form a carbon film pattern, and heating the substrate, supplying an etching gas having halogen atoms to a reaction area where the substrate is stored, applying an electric field to the reaction area to generate a discharge, and anisotropically etching the silicon oxide film using the carbon film pattern as a mask and a plasma formed by the discharge.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在形成在基片上的靶膜上形成碳膜，在碳膜上形成有机膜图案，使用有机膜图案作为掩模蚀刻碳膜，形成碳并对基板进行加热，将具有卤素原子的蚀刻气体供给到存储基板的反应区域，向反应区域施加电场以产生放电，并使用碳膜图案进行各向异性蚀刻氧化硅膜作为掩模和通过放电形成的等离子体。

23. 发明授权

US5914275A Polishing apparatus and method for planarizing layer on a semiconductor wafer 失效
公开(公告)号：US5914275A
公开(公告)日：1999-06-22
申请号：US897324
申请日：1997-07-21
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , H01L21/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

24. 发明授权

US5445996A Method for planarizing a semiconductor device having a amorphous layer 失效
标题翻译：用于平坦化具有非晶层的半导体器件的方法
公开(公告)号：US5445996A
公开(公告)日：1995-08-29
申请号：US66375
申请日：1993-05-25
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , H01L21/302 , H01L21/463
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
摘要翻译：为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。此外，以增强的抛光速率对绝缘膜进行抛光。

25. 发明授权

US5445710A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5445710A
公开(公告)日：1995-08-29
申请号：US202372
申请日：1994-02-25
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31122 , H01L21/0332 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
摘要翻译：一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜，含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

26. 发明授权

US5733713A Method of manufacturing semiconductor device 失效
公开(公告)号：US5733713A
公开(公告)日：1998-03-31
申请号：US428522
申请日：1995-04-21
申请人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
发明人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
IPC分类号： G03F7/00 , H01L21/027 , H01L21/768
CPC分类号： G03F7/0005 , H01L21/0276 , H01L21/76885 , Y10S430/151 , Y10S438/95
摘要： A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.

27. 发明授权

US5707487A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5707487A
公开(公告)日：1998-01-13
申请号：US332504
申请日：1994-10-31
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Haruo Okano
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Haruo Okano
IPC分类号： C23F4/00 , G03F7/09 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213
CPC分类号： G03F7/094 , H01L21/3081 , H01L21/31144 , H01L21/3146 , H01L21/32139 , Y10S438/95
摘要： According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive ion etching the substrate along the carbon film pattern using a high density plasma produced by application of a high frequency and a magnetic field, application of a microwave, irradiation of an electron beam, application of a high frequency of not less than 27 MHz, or application of a inductive coupled high frequency.
摘要翻译：根据本发明，制造半导体器件的方法包括以下步骤：在基片的表面上形成碳膜，在碳膜上形成掩模图案，沿着掩模图案蚀刻碳膜以形成碳膜图案并且使用通过施加高频和磁场产生的高密度等离子体沿着碳膜图案反应离子蚀刻基板，施加微波，照射电子束，施加不小于27的高频 MHz或应用电感耦合高频。

28. 发明授权

US5437961A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5437961A
公开(公告)日：1995-08-01
申请号：US263415
申请日：1994-06-21
申请人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
发明人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
IPC分类号： G03F7/00 , H01L21/027 , H01L21/768
CPC分类号： G03F7/0005 , H01L21/0276 , H01L21/76885 , Y10S430/151 , Y10S438/95
摘要： A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.
摘要翻译：公开了制造半导体器件的方法。该方法包括以下步骤：在形成在光反射层上的光反射层或透明层上形成碳层，在碳层上形成感光性树脂层，在感光性树脂层上选择性地照射光，形成感光性树脂通过显影选择性地照射光的感光性树脂层，通过使用感光图案作为掩模蚀刻碳层形成碳图案，并且通过使用以下方式蚀刻光反射层来形成光反射图案或透明层图案：感光性树脂层或碳图案作为掩模。当形成光反射层图案时，碳层的厚度设定为小于100nm。当形成透明层图案时，碳层的厚度设定为80nm以上。

29. 发明授权

US5879447A Semiconductor device and its fabricating method 失效
公开(公告)号：US5879447A
公开(公告)日：1999-03-09
申请号：US478765
申请日：1995-06-07
申请人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
发明人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L21/334 , H01L21/336 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , C30B19/00
CPC分类号： H01L28/82 , H01L21/2022 , H01L21/28035 , H01L29/6609 , H01L29/66181 , H01L29/66613 , H01L29/66628 , H01L29/66651 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/49 , H01L29/78654
摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

30. 发明授权

US5686151A Method of forming a metal oxide film 失效
标题翻译：形成金属氧化膜的方法
公开(公告)号：US5686151A
公开(公告)日：1997-11-11
申请号：US603198
申请日：1996-02-20
申请人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
发明人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
IPC分类号： C23C16/40 , H01L21/8242 , H01L21/8246 , B05D3/06 , C23C16/00
CPC分类号： C23C16/408 , H01L27/11502 , H01L27/11507 , Y10S505/734
摘要： Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.
摘要翻译：公开了形成金属氧化物膜的方法，包括以下步骤：将含有选自碳和卤素元素的至少一种元素的金属化合物的气体引入容纳基板的处理室中，引入含有具有羟基的化合物进入处理室，将已经转化为等离子体状态的含氧气体引入处理室，并使用含有金属化合物的气体在基板上形成金属氧化物膜，该气体含有具有羟基的化合物和已经转化为等离子体状态的含氧气体。

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