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21. 发明授权

US07211708B2 Exhaust processing method, plasma processing method and plasma processing apparatus 失效
标题翻译：排气处理方法，等离子体处理方法和等离子体处理装置
公开(公告)号：US07211708B2
公开(公告)日：2007-05-01
申请号：US09822191
申请日：2001-04-02
申请人： Takeshi Shishido , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
发明人： Takeshi Shishido , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
IPC分类号： A62D3/00 , B08B15/00 , B08B5/00 , H05H1/03 , H05H1/16 , H05H1/48
CPC分类号： H01J37/32844 , C23C14/564 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.
摘要翻译：化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

22. 发明授权

US06877458B2 Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US06877458B2
公开(公告)日：2005-04-12
申请号：US09797566
申请日：2001-03-05
申请人： Hiroyuki Ozaki , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Tadashi Hori
发明人： Hiroyuki Ozaki , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Tadashi Hori
IPC分类号： C23C16/455 , C23C16/44 , C23C16/509 , C23C16/54 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： H01J37/32834 , C23C16/4412 , C23C16/5096 , C23C16/545
摘要： To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.
摘要翻译：为了提供一种用于形成沉积膜的装置，其是平行板电极型CVD装置，放电容器容纳在其中流动的材料气体并从其中排出空气，借助于其中产生的等离子体分解原料气体，并沉积基板上的材料气体排出装置的排气口的横向方向上的开口比平行板电极宽。这种结构减少了沉积膜形成过程期间材料气体的停滞区域，并且控制副产物的形成，以使膜在质量和厚度上均匀。

23. 发明申请

US20090084500A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
标题翻译：加工设备，排气加工过程和等离子体处理工艺
公开(公告)号：US20090084500A1
公开(公告)日：2009-04-02
申请号：US12326238
申请日：2008-12-02
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要翻译：公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置，由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

24. 发明申请

US20090095420A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090095420A1
公开(公告)日：2009-04-16
申请号：US12327428
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： H01L21/3065 , B05C9/08 , H01L21/302
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

25. 发明申请

US20090114155A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090114155A1
公开(公告)日：2009-05-07
申请号：US12327403
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23C16/46
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

26. 发明授权

US06313430B1 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06313430B1
公开(公告)日：2001-11-06
申请号：US09258208
申请日：1999-02-26
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda
IPC分类号： B23K906
CPC分类号： B23K1/206 , B23K2101/40
摘要： A high frequency plasma processing apparatus and a high frequency plasma processing method according to the invention can suitably be used for uniformly forming on a substrate a deposition film over a large area. The apparatus and the related method solve the problem wherein high frequency power supplied to a known plasma processing apparatus can become distorted to produce harmonics and give rise to difficulty in correctly reading the incident and reflected powers and realizing an accurate matching when a VHF is used in order to raise the processing rate.
摘要翻译：根据本发明的高频等离子体处理装置和高频等离子体处理方法可以适用于在大面积上在基板上均匀地形成沉积膜。该装置和相关方法解决了提供给已知等离子体处理装置的高频功率可能变得失真以产生谐波并导致难以正确读取入射和反射功率并且当使用VHF时实现精确匹配的问题以提高加工率。

27. 发明授权

US06632284B2 Apparatus and method for forming deposited film 失效
标题翻译：用于形成沉积膜的装置和方法
公开(公告)号：US06632284B2
公开(公告)日：2003-10-14
申请号：US09767856
申请日：2001-01-24
申请人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
发明人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , C23C16/5096 , C23C16/545 , H01J37/32532
摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted.
摘要翻译：包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。分开电极面对带状基板的表面的总面积与安装有分离电极的非分割电极的面积相同。

28. 发明授权

US06470823B2 Apparatus and method for forming a deposited film by a means of plasma CVD 失效
标题翻译：通过等离子体CVD形成沉积膜的装置和方法
公开(公告)号：US06470823B2
公开(公告)日：2002-10-29
申请号：US09771650
申请日：2001-01-30
申请人： Takahiro Yajima , Masahiro Kanai , Yuzo Koda , Takeshi Shishido
发明人： Takahiro Yajima , Masahiro Kanai , Yuzo Koda , Takeshi Shishido
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , C23C16/4401 , C23C16/4412 , C23C16/455 , C23C16/509 , H01J37/32532
摘要： A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into the vacuum chamber, and an exhaustion portion through which the vacuum chamber is exhausted, the power application electrode being arranged so as to oppose a substrate for film formation positioned in the vacuum chamber, characterized in that at least said raw material gas introduction portion or the exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting the plasma, and the power application electrode and the opening adjusting member are arranged to satisfy an equation a or c≧b, with a being a shortest distance between the power application electrode and the opening adjusting member provided at the raw material gas introduction portion, c being a shortest distance between the power application electrode and the opening adjusting member provided at the exhaustion portion, and b being an average distance between the substrate and a horizontal plane face of the power application electrode which is opposed to a face of the substrate.
摘要翻译：一种成膜设备，包括真空室，电力施加电极，原料气体引入到真空室中的原料气体引入部分和真空室排出的排气部分，电力施加电极被布置成与位于真空室中的成膜用基板相对，其特征在于，至少所述原料气体导入部或者所述排气部设置有用于截取等离子体的期望厚度的开口调节部件，电力施加电极和开口调整构件被布置成满足等式a或c> = b，其中电源施加电极和设置在原料气体导入部分的开口调节构件之间的距离最短，c是最短的电力施加电极和设置在排气口处的开口调节构件之间的距离离子部分，b是与基板的表面相对的电力施加电极的基板与水平面面之间的平均距离。

29. 发明授权

US06846521B2 Apparatus and method for forming deposited film 失效
标题翻译：用于形成沉积膜的装置和方法
公开(公告)号：US06846521B2
公开(公告)日：2005-01-25
申请号：US10650763
申请日：2003-08-29
申请人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
发明人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
IPC分类号： C23C16/503 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： H01J37/32009 , C23C16/5096 , C23C16/545 , H01J37/32532
摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.
摘要翻译：包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。分离电极面对带状基板的表面的总面积与其上安装有分离电极的非分割电极的面积相同。这提高了用于形成沉积膜的装置中产生的等离子体的均匀性，并且能够降低形成沉积膜所需的成本。

30. 发明授权

US06447612B1 Film-forming apparatus for forming a deposited film on a substrate, and vacuum-processing apparatus and method for vacuum-processing an object 有权
标题翻译：在基板上形成沉积膜的成膜装置以及用于真空处理物体的真空处理装置和方法
公开(公告)号：US06447612B1
公开(公告)日：2002-09-10
申请号：US09625840
申请日：2000-07-26
申请人： Koichiro Moriyama , Masahiro Kanai , Yuzo Koda , Tadashi Hori
发明人： Koichiro Moriyama , Masahiro Kanai , Yuzo Koda , Tadashi Hori
IPC分类号： C23C1600
CPC分类号： C23C16/4409 , C23C16/545
摘要： A film-forming apparatus which has at least a vacuum vessel whose inside is capable of being vacuumed and a film-forming chamber having a discharge region provided in said vacuum vessel and in which a substrate web having a desired width and a desired length is arranged so as to constitute a part of said film-forming chamber, wherein said substrate web is continuously moved to pass through said discharge region of said film-forming chamber to continuously form a deposited film on said substrate web, characterized in that said film-forming chamber is provided with an opening-adjusting member such that said opening-adjusting member constitutes an entrance or/and an exit of said film-forming chamber, and a face of said opening-adjusting member which is opposed to said substrate web has one or more grooves formed substantially in parallel to a direction for said substrate web to be transported.
摘要翻译：一种成膜装置，其至少具有能够被真空的内部的真空容器和具有设置在所述真空容器中的放电区域的成膜室，其中布置具有期望宽度和期望长度的基材网以构成所述成膜室的一部分，其中所述基片网连续移动以通过所述成膜室的所述放电区域，以在所述基片网上连续形成沉积膜，其特征在于，所述成膜腔室设置有开口调节构件，使得所述开口调节构件构成所述成膜室的入口或/和出口，并且与所述基材腹板相对的所述开口调节构件的表面具有一个或多个更多的凹槽基本上平行于要输送的衬底腹板的方向形成。

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