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    • 22. 发明授权
    • Light emitting device and fabricating method thereof
    • 发光元件及其制造方法
    • US08368099B2
    • 2013-02-05
    • US12182218
    • 2008-07-30
    • Chien-Chun LuChia-Tai KuoChen-Peng HsuHung-Lieh HuChien-Jen Sun
    • Chien-Chun LuChia-Tai KuoChen-Peng HsuHung-Lieh HuChien-Jen Sun
    • H01L33/00
    • H01L33/505H01L33/508H01L33/60H01L2924/0002H05B33/10H01L2924/00
    • A light emitting device and a fabricating method thereof are described. The light emitting device includes a substrate, a light emitting chip, a tubular structure, and a fluorescent conversion layer. The tubular structure is formed on a surface of the substrate. The light emitting chip is disposed on the surface of the substrate and is surrounded by the tubular structure. The fluorescent conversion layer is disposed in the tubular structure and covers the light emitting chip. A ratio of a maximal vertical thickness and a maximal horizontal thickness of the fluorescent conversion layer at the light emitting chip is between 0.1 and 10. A distance for the light ray to pass through the fluorescent conversion layer is controlled by using the tubular structure, so as to solve a problem of the conventional art that fluorescent powder coating package technique results in non-uniform color temperature of the emitted light.
    • 描述了发光器件及其制造方法。 发光器件包括衬底,发光芯片,管状结构和荧光转换层。 管状结构形成在基板的表面上。 发光芯片设置在基板的表面上并被管状结构包围。 荧光转换层设置在管状结构中并覆盖发光芯片。 发光芯片上的荧光转换层的最大垂直厚度与最大水平厚度的比率为0.1至10.通过使用管状结构来控制光线穿过荧光转换层的距离,因此 为了解决现有技术的问题,荧光粉末涂布包装技术导致发出的光的不均匀的色温。