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21. 发明授权

US08495118B2 Tunable random bit generator with magnetic tunnel junction 有权
标题翻译：具有磁隧道结的可调随机位发生器
公开(公告)号：US08495118B2
公开(公告)日：2013-07-23
申请号：US12399127
申请日：2009-03-06
申请人： Xiaobin Wang , Wenzhong Zhu , Henry Huang , Yiran Chen , Haiwen Xi
发明人： Xiaobin Wang , Wenzhong Zhu , Henry Huang , Yiran Chen , Haiwen Xi
IPC分类号： G06F7/58 , G11C11/00 , G11C7/00
CPC分类号： G11C11/1675 , G01R33/098 , G06F7/588 , G11C11/161 , G11C11/1697
摘要： A random number generator device that utilizes a magnetic tunnel junction. An AC current source is in electrical connection to the magnetic tunnel junction to provide an AC current having an amplitude and a frequency through the free layer of the magnetic tunnel junction, the AC current configured to switch the magnetization orientation of the free layer via thermal magnetization. A read circuit is used to determine the relative orientation of the free layer magnetization in relation to the reference layer magnetization orientation.
摘要翻译：利用磁性隧道结的随机数发生装置。 AC电流源与磁性隧道结电连接以提供具有通过磁性隧道结的自由层的振幅和频率的AC电流，AC电流被配置为通过热磁化来切换自由层的磁化取向。读取电路用于确定自由层磁化相对于参考层磁化取向的相对取向。

22. 发明授权

US08320169B2 Asymmetric write current compensation 有权
标题翻译：不对称写入电流补偿
公开(公告)号：US08320169B2
公开(公告)日：2012-11-27
申请号：US13333598
申请日：2011-12-21
申请人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
发明人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.
摘要翻译：一种用于补偿非易失性单元中不对称写入电流的装置和方法。单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐编程单元格

23. 发明申请

US20110026317A1 SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS 有权
标题翻译：转子转矩记忆自读参考读写方法
公开(公告)号：US20110026317A1
公开(公告)日：2011-02-03
申请号：US12903305
申请日：2010-10-13
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

24. 发明申请

US20100085795A1 Asymmetric Write Current Compensation 有权
标题翻译：非对称写电流补偿
公开(公告)号：US20100085795A1
公开(公告)日：2010-04-08
申请号：US12408996
申请日：2009-03-23
申请人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
发明人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/00 , G11C11/14 , G11C11/416
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.
摘要翻译：一种用于补偿非易失性单元中不对称写入电流的装置和方法。单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐编程单元格

25. 发明申请

US20110134688A1 Asymmetric Write Current Compensation 有权
标题翻译：非对称写电流补偿
公开(公告)号：US20110134688A1
公开(公告)日：2011-06-09
申请号：US13016445
申请日：2011-01-28
申请人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
发明人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/15 , H01L21/02 , H01L29/82
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.
摘要翻译：一种用于补偿非易失性单元中不对称写入电流的装置和方法。单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐编程单元格

26. 发明授权

US08107282B2 Asymmetric write current compensation 有权
公开(公告)号：US08107282B2
公开(公告)日：2012-01-31
申请号：US13016445
申请日：2011-01-28
申请人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
发明人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

27. 发明授权

US07961509B2 Spin-transfer torque memory self-reference read and write assist methods 有权
标题翻译：自转转矩存储器自参考读写辅助方法
公开(公告)号：US07961509B2
公开(公告)日：2011-06-14
申请号：US12903305
申请日：2010-10-13
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

28. 发明申请

US20100109660A1 Tunable Random Bit Generator with Magnetic Tunnel Junction 有权
标题翻译：具有磁隧道结的可调随机位发生器
公开(公告)号：US20100109660A1
公开(公告)日：2010-05-06
申请号：US12399127
申请日：2009-03-06
申请人： Xiaobin Wang , Wenzhong Zhu , Henry Huang , Yiran Chen , Haiwen Xi
发明人： Xiaobin Wang , Wenzhong Zhu , Henry Huang , Yiran Chen , Haiwen Xi
IPC分类号： G01R33/02
CPC分类号： G11C11/1675 , G01R33/098 , G06F7/588 , G11C11/161 , G11C11/1697
摘要： A random number generator device that utilizes a magnetic tunnel junction. An AC current source is in electrical connection to the magnetic tunnel junction to provide an AC current having an amplitude and a frequency through the free layer of the magnetic tunnel junction, the AC current configured to switch the magnetization orientation of the free layer via thermal magnetization. A read circuit is used to determine the relative orientation of the free layer magnetization in relation to the reference layer magnetization orientation.
摘要翻译：利用磁性隧道结的随机数发生装置。 AC电流源与磁性隧道结电连接以提供具有通过磁性隧道结的自由层的振幅和频率的AC电流，AC电流被配置为通过热磁化来切换自由层的磁化取向。读取电路用于确定自由层磁化相对于参考层磁化取向的相对取向。

29. 发明申请

US20110194337A1 Non-Volatile Memory Cell With Precessional Switching 有权
标题翻译：具有进动切换的非易失性存储单元
公开(公告)号：US20110194337A1
公开(公告)日：2011-08-11
申请号：US13091372
申请日：2011-04-21
申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tian , Brian Seungwhan Lee
发明人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tian , Brian Seungwhan Lee
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G06F7/588 , G11C11/161 , G11C11/1675 , G11C11/1677 , G11C11/1693 , H01F10/3254 , H01F10/3286
摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
摘要翻译：一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

30. 发明授权

US07936592B2 Non-volatile memory cell with precessional switching 有权
标题翻译：具有进动切换的非易失性存储单元
公开(公告)号：US07936592B2
公开(公告)日：2011-05-03
申请号：US12364589
申请日：2009-02-03
申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tan , Brian Seungwhan Lee
发明人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tan , Brian Seungwhan Lee
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G06F7/588 , G11C11/161 , G11C11/1675 , G11C11/1677 , G11C11/1693 , H01F10/3254 , H01F10/3286
摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
摘要翻译：一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

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